| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/01/2013 | US8344433 Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same |
| 01/01/2013 | US8344430 Multiple substrate electrical circuit device |
| 01/01/2013 | US8344425 Multi-gate III-V quantum well structures |
| 01/01/2013 | US8344424 Enhancement mode gallium nitride power devices |
| 01/01/2013 | US8344423 Nitride semiconductor device and method for fabricating the same |
| 01/01/2013 | US8344422 Semiconductor device |
| 01/01/2013 | US8344421 Group III-nitride enhancement mode field effect devices and fabrication methods |
| 01/01/2013 | US8344420 Enhancement-mode gallium nitride high electron mobility transistor |
| 01/01/2013 | US8344419 Compound semiconductor device and manufacturing method of the same |
| 01/01/2013 | US8344416 Integrated circuits using guard rings for ESD, systems, and methods for forming the integrated circuits |
| 01/01/2013 | US8344415 Semiconductor component |
| 01/01/2013 | US8344411 Light emitting diode package |
| 01/01/2013 | US8344397 Solid state light sheet having wide support substrate and narrow strips enclosing LED dies in series |
| 01/01/2013 | US8344391 Storage of an image in an integrated circuit |
| 01/01/2013 | US8344390 Thin film active element group, thin film active element array, organic light emitting device, display apparatus, and thin film active element manufacturing method |
| 01/01/2013 | US8344386 Laminated thin-film device, manufacturing method thereof, and circuit |
| 01/01/2013 | US8344385 Vertical-type semiconductor device |
| 01/01/2013 | US8344384 Thin film transistor and manufacturing method thereof |
| 01/01/2013 | US8344383 Active matrix substrate, display device, and television apparatus |
| 01/01/2013 | US8344382 Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device |
| 01/01/2013 | US8344380 Thin film transistor and display device |
| 01/01/2013 | US8344379 Display device and manufacturing method of the same |
| 01/01/2013 | US8344378 Thin film transistor and method for manufacturing the same |
| 01/01/2013 | US8344377 Display element having filter material diffused in a substrate of the display element |
| 01/01/2013 | US8344375 Nonvolatile memory elements with metal deficient resistive switching metal oxides |
| 01/01/2013 | US8344374 Semiconductor device comprising oxide semiconductor layer |
| 01/01/2013 | US8344373 Thin film transistor |
| 01/01/2013 | US8344372 Display device and method for manufacturing the same |
| 01/01/2013 | US8344371 Ultraviolet sensor |
| 01/01/2013 | US8344368 Fused cyclic compound and organic electronic device |
| 01/01/2013 | US8344367 Molecular devices and methods of manufacturing the same |
| 01/01/2013 | US8344364 Thin film transistor having a nano semiconductor sheet and method of manufacturing the same |
| 01/01/2013 | US8344361 Semiconductor nanowire vertical device architecture |
| 01/01/2013 | US8344359 Transistor having thermo electron cooling |
| 01/01/2013 | US8344358 Graphene transistor with a self-aligned gate |
| 01/01/2013 | US8344357 3-terminal electronic device and 2-terminal electronic device including an active layer including nanosheets |
| 01/01/2013 | US8344355 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same |
| 01/01/2013 | US8344353 Light emitting diode having a transparent substrate |
| 01/01/2013 | US8344352 Using unstable nitrides to form semiconductor structures |
| 01/01/2013 | US8344351 Phase change memory device with plated phase change material |
| 01/01/2013 | US8344346 Semiconductor device having resistive device |
| 01/01/2013 | US8344345 Nonvolatile semiconductor memory device having a resistance variable layer and manufacturing method thereof |
| 01/01/2013 | US8344344 Resistive memory device and method of fabricating the same |
| 01/01/2013 | US8344343 Composite film for phase change memory devices |
| 01/01/2013 | US8343881 Silicon dioxide layer deposited with BDEAS |
| 01/01/2013 | US8343868 Device and methodology for reducing effective dielectric constant in semiconductor devices |
| 01/01/2013 | US8343864 DRAM with schottky barrier FET and MIM trench capacitor |
| 01/01/2013 | US8343840 Blocking dielectric engineered charge trapping memory cell with high speed erase |
| 01/01/2013 | US8343838 Method of reducing dislocation-induced leakage in a strained-layer field-effect transistor by implanting blocking impurity into the strained-layer |
| 01/01/2013 | US8343831 Semiconductor device and method of manufacturing the semiconductor device |
| 01/01/2013 | US8343824 Gallium nitride material processing and related device structures |
| 01/01/2013 | US8343815 TFET with nanowire source |
| 01/01/2013 | US8343800 Thin film transistor and method of producing thin film transistor |
| 01/01/2013 | US8343780 Method of stressing a thin pattern |
| 01/01/2013 | US8343382 Band gap control in conjugated oligomers and polymers via Lewis acids |
| 01/01/2013 | US8343381 Hole transport composition |
| 12/27/2012 | WO2012177989A1 System and method for providing a carbon nanotube mixer |
| 12/27/2012 | WO2012177936A1 Integrated circuits on ceramic wafers using layer transfer technology |
| 12/27/2012 | WO2012177716A2 N-metal film deposition with initiation layer |
| 12/27/2012 | WO2012177699A1 Current aperture vertical electron transistors |
| 12/27/2012 | WO2012177375A2 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage |
| 12/27/2012 | WO2012177371A1 Micro-electro-mechanical system (mems) and related actuator bumps, methods of manufacture and design structures |
| 12/27/2012 | WO2012177328A1 Graphene or carbon nanotube devices with localized bottom gates and gate dielectric |
| 12/27/2012 | WO2012177246A1 Mbe growth technique for group ii-vi inverted multijunction solar cells |
| 12/27/2012 | WO2012176820A1 Fused heterocyclic compound and polymer thereof |
| 12/27/2012 | WO2012176747A1 Method for producing functional element |
| 12/27/2012 | WO2012176503A1 Semiconductor device and method for manufacturing semiconductor device |
| 12/27/2012 | WO2012176449A1 Equivalent circuit of bidirectional switch, bidirectional switch simulation method, and bidirectional switch simulation device |
| 12/27/2012 | WO2012176422A1 Display device and method for manufacturing same |
| 12/27/2012 | WO2012176411A1 Transistor semiconductor substrate, transistor, and method of manufacturing transistor semiconductor substrate |
| 12/27/2012 | WO2012176410A1 Method for manufacturing thin film transistor substrate, thin film transistor substrate manufactured by same, and method for manufacturing semiconductor film |
| 12/27/2012 | WO2012176399A1 Nitride semiconductor device |
| 12/27/2012 | WO2012176232A1 Thin-film transistor element and method for producing same, organic el display element and method for producing same, and organic el display device |
| 12/27/2012 | WO2012176231A1 Thin-film transistor element and method for producing same, organic el display element, and organic el display device |
| 12/27/2012 | WO2012176064A1 Highly sensitive magnetic tunable heterojunction device for resistive switching |
| 12/27/2012 | WO2012175716A1 Vertical bipolar transistor having a lateral collector drift region |
| 12/27/2012 | WO2012174872A1 Germanium-based nmos device and preparation method therefor |
| 12/27/2012 | WO2012174871A1 A germanium-based nmos device and a manufacturing method thereof |
| 12/27/2012 | WO2012174850A1 Semiconductor structure and manufacturing method thereof |
| 12/27/2012 | WO2012174791A1 Semiconductor structure and method for manufacturing the same |
| 12/27/2012 | WO2012174771A1 Mosfet and manufacturing method thereof |
| 12/27/2012 | WO2012174770A1 Semiconductor structure and manufacturing method thereof |
| 12/27/2012 | WO2012174769A1 Mosfet and manufacturing method thereof |
| 12/27/2012 | WO2012174696A1 Semiconductor device and the manufacturing method thereof |
| 12/27/2012 | WO2012174694A1 Semiconductor device and fabricating method thereof |
| 12/27/2012 | WO2012174689A1 Method for forming strained semiconductor channel |
| 12/27/2012 | WO2012150323A3 Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device |
| 12/27/2012 | WO2012134052A3 Hybrid layer including an oxide layer or an organic layer and an organic polymer layer, and method for preparing same |
| 12/27/2012 | WO2012099928A3 Structure and method for reduction of vt-w effect in high-k metal gate devices |
| 12/27/2012 | US20120329251 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 12/27/2012 | US20120329243 Process for fabricating a semiconductor structure employing a temporary bond |
| 12/27/2012 | US20120327706 Spin-torque transfer memory cell structures with symmetric switching and single direction programming |
| 12/27/2012 | US20120326766 Silicon Controlled Rectifier with Stress-Enhanced Adjustable Trigger Voltage |
| 12/27/2012 | US20120326752 Design method and structure for a transistor having a relatively large threshold voltage variation range and for a random number generator incorporating multiple essentially identical transistors having such a large threshold voltage variation range |
| 12/27/2012 | US20120326699 Galvanic isolation device and method |
| 12/27/2012 | US20120326646 Power semiconductor module, power converting apparatus, and railway car |
| 12/27/2012 | US20120326283 Interconnect Regions |
| 12/27/2012 | US20120326279 Method for forming semiconductor devices with active silicon height variation |
| 12/27/2012 | US20120326277 Power semiconductor device and manufacturing method thereof |
| 12/27/2012 | US20120326276 Buried Layer of An Integrated Circuit |