Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2012
11/29/2012US20120299007 Thin film transistor, method of manufacturing thin film transistor, and organic light emitting diode display
11/29/2012US20120299005 Non-volatile memory device and method for fabricating the same
11/29/2012US20120299003 Analog circuit and semiconductor device
11/29/2012US20120299001 Semiconductor device and manufacturing method thereof
11/29/2012US20120299000 Thin film transistor, method of manufacturing the same, and organic light emitting display apparatus
11/29/2012US20120298999 Semiconductor device and manufacturing method thereof
11/29/2012US20120298998 Method for forming oxide semiconductor film, semiconductor device, and method for manufacturing semiconductor device
11/29/2012US20120298997 Semiconductor device
11/29/2012US20120298996 Thin Film Transistor and Method for Manufacturing the Same
11/29/2012US20120298995 Wafer and epitaxial wafer, and manufacturing processes therefor
11/29/2012US20120298991 Multilayer substrate having gallium nitride layer and method for forming the same
11/29/2012US20120298990 Semiconductor device and method for manufacturing the same
11/29/2012US20120298987 Semiconductor device and manufacturing method thereof
11/29/2012US20120298986 Semiconductor device and manufacturing method thereof
11/29/2012US20120298985 Thin film transistor and method of fabricating the same
11/29/2012US20120298983 Semiconductor structure and organic electroluminescence device
11/29/2012US20120298965 Multigate structure formed with electroless metal deposition
11/29/2012US20120298964 Light-Emitting Semiconductor Chip
11/29/2012US20120298963 Structure for use in fabrication of pin heterojunction tfet
11/29/2012US20120298962 Utilization of Organic Buffer Layer to Fabricate High Performance Carbon Nanoelectronic Devices
11/29/2012US20120298961 Control of tunneling junction in a hetero tunnel field effect transistor
11/29/2012US20120298960 Hetero-Junction Tunneling Transistor
11/29/2012US20120298959 Line-tunneling tunnel field-effect transistor (tfet) and manufacturing method
11/29/2012US20120298958 Quantum-well-based semiconductor devices
11/29/2012US20120298952 Semiconductor light emitting device, nitride semiconductor layer, and method for forming nitride semiconductor layer
11/29/2012US20120298949 Graphene/Nanostructure FET with Self-Aligned Contact and Gate
11/29/2012US20120298948 Nanowire fet having induced radial strain
11/29/2012DE112009000917B4 Verfahren zum Bilden einer Pufferschicht-Architektur auf Silizium und dadurch gebildete Strukturen A method of forming a buffer layer architecture on silicon and structures formed thereby
11/29/2012DE102012207309A1 Verfahren zur Herstellung einer Siliziumcarbid-Halbleitervorrichtung A method of manufacturing a silicon carbide semiconductor device
11/29/2012DE102012104503A1 Halbleitervorrichtung und integrierte Schaltung mit der Halbleitervorrichtung Semiconductor device and integrated circuit having the semiconductor device
11/29/2012DE102012104496A1 Elektrode und diese enthaltende elektronische Vorrichtung Electrode and those containing electronic device
11/29/2012DE102012104440A1 Vereinfachte organische elektronische Vorrichtung, welche eine Polymeranode mit hoher Austrittsarbeit verwendet Simplified organic electronic device which uses a polymer anode with a high work function
11/29/2012DE102012000958A1 Leistungs-Graben-MOSFET mit verringertem EIN-Widerstand Power Trench MOSFET with reduced on-resistance
11/29/2012DE102010002798B4 Siliziumkarbid-Halbleitervorrichtung mit Schottky-Sperrschichtdiode und Verfahren zu deren Fertigung Silicon carbide semiconductor device with Schottky-barrier diode and methods for their production
11/29/2012DE102008051166B4 Halbleitervorrichtung mit einer Diode A semiconductor device comprising a diode
11/29/2012CA2825888A1 Electrode structures for arrays of nanostructures and methods thereof
11/28/2012EP2528117A1 Group iii nitride semiconductor element
11/28/2012EP2528100A1 Circuit board, display device, and process for production of circuit board
11/28/2012EP2528099A1 Line- tunneling Tunnel Field-Effect Transistor (TFET) and manufacturing method
11/28/2012EP2528098A1 Silicon carbide semiconductor device and method of manufacturing same
11/28/2012EP2528090A1 Semiconductor component and method for its manufacture
11/28/2012EP2528086A2 Semiconductor device comprising a resistor and two capacitors of different capacitance
11/28/2012EP2528085A1 Semiconductor device and manufacturing method thereof
11/28/2012EP2528061A2 Thermally assisted flash memory with diode strapping
11/28/2012EP2526622A1 Semiconductor device
11/28/2012EP2526567A1 Lithography-free schottky semiconductor process having the possibility of integrating a protective diode
11/28/2012CN202564376U Nitride semiconductor element and nitride semiconductor packaging
11/28/2012CN202564375U Thyristor provided with buffer layer structure
11/28/2012CN102804388A Semiconductor device
11/28/2012CN102804387A Thin-BOX metal backgate extremely thin SOI device
11/28/2012CN102804386A Semiconductor device
11/28/2012CN102804385A Semiconductor device
11/28/2012CN102804384A Semiconductor device and production method therefor
11/28/2012CN102804383A Functional integration of dilute nitrides into high efficiency III-V solar cells
11/28/2012CN102804382A P-type semiconductor devices
11/28/2012CN102804380A Semiconductor device
11/28/2012CN102804360A 半导体装置 Semiconductor device
11/28/2012CN102804359A Semiconductor device
11/28/2012CN102804352A Wiring layer structure and process for manufacture thereof
11/28/2012CN102804349A Silicon carbide semiconductor device, and process for production thereof
11/28/2012CN102804342A Semiconductor device and manufacturing method therefor
11/28/2012CN102804341A Method for producing electronic device, electronic device, semiconductor device, and transistor
11/28/2012CN102804334A Semiconductor substrate, method for manufacturing semiconductor substrate, semiconductor device, and method for manufacturing semiconductor device
11/28/2012CN102803940A TFT array inspection method and TFT array inspection device
11/28/2012CN102803552A Plasma treatment method
11/28/2012CN102800710A Semiconductor diode packaging structure
11/28/2012CN102800709A Driving device for thin film transistor
11/28/2012CN102800708A 半导体元件及其制作方法 Semiconductor device and manufacturing method thereof
11/28/2012CN102800707A Semiconductor device and manufacturing method thereof
11/28/2012CN102800706A Thin-film semiconductor device and display equipped with same
11/28/2012CN102800705A Method for manufacturing metal oxide semiconductor thin film transistor
11/28/2012CN102800704A Trench MOS (Metal Oxide Semiconductor) transistor and manufacture method thereof, and integrated circuit
11/28/2012CN102800703A 半导体装置 Semiconductor device
11/28/2012CN102800702A Semiconductor device and integrated circuit including the semiconductor device
11/28/2012CN102800701A Semiconductor device having a super junction structure and method of manufacturing the same
11/28/2012CN102800700A Transistor and forming method thereof
11/28/2012CN102800699A Semiconductor structure and forming method thereof
11/28/2012CN102800698A Fast switching thyristor with subsection width-variable involute multi-finger amplifying gate pole structure
11/28/2012CN102800697A IGBT (insulated gate bipolar translator) device with high-temperature self-protection function
11/28/2012CN102800696A Semiconductor element and manufacturing method thereof
11/28/2012CN102800695A 3-dimensional non-volatile memory device and method of manufacturing the same
11/28/2012CN102800694A Semiconductor device and method of forming the same
11/28/2012CN102800693A Semiconductor devices and related methods
11/28/2012CN102800692A Thin film transistor construction with large channel width and thin film transistor substrate circuit
11/28/2012CN102800691A Carrier-stored trench gate bipolar transistor
11/28/2012CN102800690A Non-volatile memory device and method for fabricating the same
11/28/2012CN102800689A Nonvolatile memory device and method for fabricating the same
11/28/2012CN102800688A Semiconductor structure and method for operating same
11/28/2012CN102800680A Mixed crystal face vertical channel Si-based BiCMOS integrated device and preparation method thereof
11/28/2012CN102800677A SONOS (Silicon Oxide Nitride Oxide Silicon) device unit
11/28/2012CN102800670A One-chip type metal-oxide semiconductor field effect transistor-Schottky diode element
11/28/2012CN102800620A Semiconductor device and manufacturing method thereof
11/28/2012CN102800592A Transistor and forming method thereof
11/28/2012CN102800590A Preparation method of SOI (silicon on insulator)-based SiGe-HBT (heterojunction bipolar transistor)
11/28/2012CN102800589A Preparation method of SOI (silicon on insulator)-based SiGe-HBT (heterojunction bipolar transistor)
11/28/2012CN102800583A Planar power MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof
11/28/2012CN102800579A Slit recess channel gate and method of forming the same
11/28/2012CN102800572A Method for preparing magnesium-doped semiconductor film and semiconductor film thereof
11/28/2012CN102800571A Method for producing semiconductor film and semiconductor film
11/28/2012CN102800570A Manufacturing method of silicon carbide semiconductor device