| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/03/2013 | DE102012211105A1 Verfahren zur herstellung eines rückwärts sperrenden bipolaren transistorsmit isoliertem gate Process for the preparation of a reverse blocking insulated gate bipolar transistorsmit |
| 01/03/2013 | DE102012208361A1 Integrierte drucksensordichtung Integrated pressure sensor seal |
| 01/03/2013 | DE102012105772A1 Halbleiter-Leuchtdiodenvorrichtungs-Verpackung Semiconductor light-emitting device package |
| 01/03/2013 | DE102012105685A1 Halbleiterbauelement mit Spannungskompensationsstruktur Semiconductor device with voltage compensation structure |
| 01/03/2013 | DE102011106922A1 Corner-Transistor und Verfahren zur Herstellung desselben Corner transistor and method of manufacturing the same |
| 01/03/2013 | DE102011078478A1 Thin layer system for storing electrical power in battery of solar module, has semiconductor- and insulator layers formed on substrate, and energy storage medium formed as electrostatic part and operated with certain voltage range |
| 01/02/2013 | EP2541625A1 Semiconductor device and method for manufacturing semiconductor device |
| 01/02/2013 | EP2541609A1 Semiconductor device |
| 01/02/2013 | EP2541608A1 High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof |
| 01/02/2013 | EP2541607A2 Semiconductor device having a field-effect transistor |
| 01/02/2013 | EP2541606A2 Field transistor structure manufactured using gate last process |
| 01/02/2013 | EP2541605A1 CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof |
| 01/02/2013 | EP2541604A1 Semiconductor device and production method therefor |
| 01/02/2013 | EP2541600A1 Non-volatile semiconductor memory cell with dual functions |
| 01/02/2013 | EP2541595A2 Decoupling capacitor circuitry and method of forming the same |
| 01/02/2013 | EP2540662A2 Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device |
| 01/02/2013 | EP2539953A2 Group iv metal or semiconductor nanowire fabric |
| 01/02/2013 | EP2539925A1 Methods of making transistor including reentrant profile |
| 01/02/2013 | EP2539924A1 Vertical transistor including reentrant profile |
| 01/02/2013 | CN202651123U Rectifier diode with controllable solder layer thickness |
| 01/02/2013 | CN202651122U Solar energy diode |
| 01/02/2013 | CN202651121U Double-copper-electrode rectifier tube chip plated with environmentally-friendly material |
| 01/02/2013 | CN202651120U MOSFET field effect tube for suppressing gate source short circuit failure |
| 01/02/2013 | CN202651119U 半导体器件 Semiconductor devices |
| 01/02/2013 | CN202651118U Semiconductor structure |
| 01/02/2013 | CN202651111U Protection ring of deep-groove super-junction structure |
| 01/02/2013 | CN202641120U Ball-point pen with memory function and capable of being connected with computer |
| 01/02/2013 | CN1839480B Field effect transistor having increased carrier mobility |
| 01/02/2013 | CN102859705A Semiconductor device and manufacturing method thereof |
| 01/02/2013 | CN102859704A Method for manufacturing semiconductor device |
| 01/02/2013 | CN102859703A Method for manufacturing semiconductor device |
| 01/02/2013 | CN102859702A Semiconductor element, method for producing semiconductor element, active matrix substrate, and display device |
| 01/02/2013 | CN102859701A Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor |
| 01/02/2013 | CN102859700A LDMOS with no reverse recovery |
| 01/02/2013 | CN102859699A Structures And Methods Of Fabricating Dual Gate Devices |
| 01/02/2013 | CN102859698A Igbt |
| 01/02/2013 | CN102859697A 碳化硅半导体器件 Silicon carbide semiconductor device |
| 01/02/2013 | CN102859696A Semiconductor device |
| 01/02/2013 | CN102859695A Epitaxial substrate and method for producing epitaxial substrate |
| 01/02/2013 | CN102859694A Self assembled nano dots (SAND) and non-self assembled nano-dots (NSAND) structures to create spacers for energy transfer |
| 01/02/2013 | CN102859689A 半导体装置 Semiconductor device |
| 01/02/2013 | CN102859680A 集成电路 IC |
| 01/02/2013 | CN102859670A Deposition method |
| 01/02/2013 | CN102859669A Nitride semiconductor transistor |
| 01/02/2013 | CN102859668A Two step poly etch LDMOS gate formation |
| 01/02/2013 | CN102859661A Silicon carbide semiconductor device and method for manufacturing same |
| 01/02/2013 | CN102859660A Method for manufacturing semiconductor device |
| 01/02/2013 | CN102859653A Epitaxial substrate and method for producing epitaxial substrate |
| 01/02/2013 | CN102859605A Shift register and display device |
| 01/02/2013 | CN102858840A Polymer compound |
| 01/02/2013 | CN102857217A Low-power-consumption xor/xnor gate circuit |
| 01/02/2013 | CN102857202A Integrated system with double-gate enhancement-mode HEMT (high electron mobility transistor) device |
| 01/02/2013 | CN102856395A Pressure-control thin film transistor and application thereof |
| 01/02/2013 | CN102856394A Schottky diode and semiconductor device |
| 01/02/2013 | CN102856393A Chip-diode structure |
| 01/02/2013 | CN102856392A Thin film transistor active device and manufacturing method of same |
| 01/02/2013 | CN102856391A Active component, driving circuit structure and display panel |
| 01/02/2013 | CN102856390A A switching element of LCDs or organic EL displays comprising thin film transistor |
| 01/02/2013 | CN102856389A Thin film transistor and fabricating method thereof |
| 01/02/2013 | CN102856388A Thin film transistor and organic light emitting diode display using the same and method for manufacturing the same |
| 01/02/2013 | CN102856387A Methods of making lateral junction field effect transistors using selective epitaxial growth |
| 01/02/2013 | CN102856386A Semiconductor device and its manufacturing method |
| 01/02/2013 | CN102856385A Trench MOSFET (metal-oxide-semiconductor field effect transistor) with trench source field plate and preparation method of trench MOSFET |
| 01/02/2013 | CN102856384A Field transistor structure manufactured using gate last process |
| 01/02/2013 | CN102856383A Semiconductor device and method of fabricating same |
| 01/02/2013 | CN102856382A Silicon carbide semiconductor device |
| 01/02/2013 | CN102856381A Semiconductor device, method of manufacturing the semiconductor device, and electronic device |
| 01/02/2013 | CN102856380A Trench mosfet with trenched floating gates as termination |
| 01/02/2013 | CN102856379A Trench transistor and manufacturing method of the trench transistor |
| 01/02/2013 | CN102856378A Corner transistor and method of fabricating the same |
| 01/02/2013 | CN102856377A N-type semiconductor device and manufacturing method thereof |
| 01/02/2013 | CN102856376A Semiconductor structure and manufacturing method thereof |
| 01/02/2013 | CN102856375A Semiconductor structure and manufacturing method thereof |
| 01/02/2013 | CN102856374A GaN enhanced MIS-HFET device and preparation method of same |
| 01/02/2013 | CN102856373A High-electronic-mobility-rate transistor |
| 01/02/2013 | CN102856372A Packaging structure of double-grid four-end III-group nitride enhanced type high electron mobility transistor (HEMT) device |
| 01/02/2013 | CN102856371A Novel dual-grid three-terminal III-nitride enhanced type HEMT (High Electron Mobility Transistor) device |
| 01/02/2013 | CN102856370A Enhanced switching device |
| 01/02/2013 | CN102856369A Suspended HEMT (high electron mobility transistor) device based on silicon substrate nitride and preparation method of suspended HEMT device |
| 01/02/2013 | CN102856368A Power bipolar transistor and manufacture method thereof |
| 01/02/2013 | CN102856367A Random noise source |
| 01/02/2013 | CN102856366A Enhancement type device |
| 01/02/2013 | CN102856365A Application circuit and operation method of semiconductor device |
| 01/02/2013 | CN102856364A Thin film transistor and method of manufacturing the same |
| 01/02/2013 | CN102856363A Trench junction barrier schottky structure with enhanced contact area integrated with a mosfet |
| 01/02/2013 | CN102856362A Isolated gate controlled transverse field emission transistor and driving method thereof |
| 01/02/2013 | CN102856361A Transistor element provided with double-face field plate and manufacturing method thereof |
| 01/02/2013 | CN102856360A Semiconductor structure and preparation method thereof |
| 01/02/2013 | CN102856359A Semiconductor epitaxial structure and production method thereof |
| 01/02/2013 | CN102856358A Electrical switching device |
| 01/02/2013 | CN102856357A Heterojunction 1T-DRAM (One Transistor Dynamic Random Access Memory) structure based on buried layer N-type trap and preparation method thereof |
| 01/02/2013 | CN102856356A Terminal for semiconductor power device |
| 01/02/2013 | CN102856355A Enhanced semiconductor device |
| 01/02/2013 | CN102856354A Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device |
| 01/02/2013 | CN102856353A Micro-through type IGBT (Insulated Gate Bipolar Translator) device and manufacture method thereof |
| 01/02/2013 | CN102856352A Insulated gate bipolar transistor terminal and producing method thereof |
| 01/02/2013 | CN102856322A Pixel structure and method for producing pixel structure |
| 01/02/2013 | CN102856317A Electro-Static Discharge protection device |
| 01/02/2013 | CN102856256A Semiconductor element and manufacture method thereof |
| 01/02/2013 | CN102856255A Semiconductor element with metal gate and manufacture method thereof |