Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2012
12/13/2012US20120313162 Semiconductor device, method for manufacturing metal film, and method for manufacturing semiconductor device
12/13/2012US20120313161 Semiconductor device with enhanced mobility and method
12/13/2012US20120313160 Semiconductor device and a method of manufacturing the same
12/13/2012US20120313159 Non-volatile memory devices including gates having reduced widths and protection spacers and methods of manufacturing the same
12/13/2012US20120313158 Semiconductor structure and method for manufacturing the same
12/13/2012US20120313154 MOS Transistor Having Combined-Source Structure With Low Power Consumption and Method for Fabricating the Same
12/13/2012US20120313153 System and method of plating conductive gate contacts on metal gates for self-aligned contact interconnections
12/13/2012US20120313152 Semiconductor device and method of manufacturing the same
12/13/2012US20120313151 Semiconductor device including contact structure, method of fabricating the same, and electronic system including the same
12/13/2012US20120313150 Thin film transistor and method of manufacturing the same, and electronic apparatus
12/13/2012US20120313149 Semiconductor structure and method for manufacturing the same
12/13/2012US20120313148 Self-aligned trench contact and local interconnect with replacement gate process
12/13/2012US20120313146 Transistor and method of forming the transistor so as to have reduced base resistance
12/13/2012US20120313145 Semiconductor device with spacer layer between carrier traveling layer and carrier supplying layer
12/13/2012US20120313144 Recessed gate field effect transistor
12/13/2012US20120313143 Highly scaled etsoi floating body memory and memory circuit
12/13/2012US20120313140 Method of Fabricating a Deep Trench Insulated Gate Bipolar Transistor
12/13/2012US20120313139 Igbt and diode
12/13/2012US20120313114 Method of manufacturing thin film transistor, thin film transistor manufactured by using the method, method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured by using the method
12/13/2012US20120313112 Semiconductor device
12/13/2012US20120313111 DIE ALIGNMENT WITH CRYSTALLOGRAPHIC AXES IN GaN-ON-SiC AND OTHER NON-CUBIC MATERIAL SUBSTRATES
12/13/2012US20120313108 Semiconductor diode
12/13/2012US20120313107 Semiconductor Device
12/13/2012US20120313106 Enhancement Mode Group III-V High Electron Mobility Transistor (HEMT) and Method for Fabrication
12/13/2012US20120313105 Unipolar diode with low turn-on voltage
12/13/2012US20120313103 Radioactive-ray imaging apparatus, radioactive-ray imaging display system and transistor
12/13/2012US20120313101 Thin film transistor array substrate and method for manufacturing the same
12/13/2012US20120313100 Pixel structure
12/13/2012US20120313099 Organic light emitting display device and method of manufacturing the same
12/13/2012US20120313098 Organic Light-Emitting Display Apparatus
12/13/2012US20120313097 Flash memory device having a graded composition, high dielectric constant gate insulator
12/13/2012US20120313096 Oxide semiconductor composition and preparation method thereof, method of forming oxide semiconductor thin film, method of fabricating electronic device and electronic device fabricated thereby
12/13/2012US20120313093 Oxide Thin Film Transistor and Method of Fabricating the Same
12/13/2012US20120313092 Metal oxide tft with improved source/drain contacts
12/13/2012US20120313084 Metal oxide semiconductor transistor
12/13/2012US20120313081 Electronic device
12/13/2012US20120313079 Graphene electronic devices having multi-layered gate insulating layer
12/13/2012US20120313078 Semiconductor device and method for manufacturing semiconductor device
12/13/2012US20120313055 Method of manufacturing transparent conductive film, the transparent conductive film, element and transparent conductive substrate using the film, as well as device using the substrate
12/13/2012DE112011100532T5 Erzeugung von Nanodraht-Feldeffekttransistoren mit mehreren Durchmessern Generation of nanowire field effect transistors with multiple diameters
12/13/2012DE112008003808B4 Beschleunigungssensor Acceleration sensor
12/13/2012DE102012209512A1 Metall-Gate-Stapelbildung in Austausch-Gate-Technologie Metal gate stack formation in exchange gate technology
12/13/2012DE102012207913A1 Finne zuletzt Ersatzmetallgate FinFET Finn last replacement metal gate FinFET
12/13/2012DE102012203844A1 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
12/13/2012DE102009036951B4 Keramik-Mehrlagenschaltung mit elektrischem Bauteil Ceramic multilayer circuit with electrical component
12/13/2012DE102009026835B4 Halbleiterbauelement mit einer Driftzone und einer Driftsteuerzone A semiconductor device having a drift region and a drift control zone
12/13/2012DE102008015690B4 Halbleitervorrichtung Semiconductor device
12/13/2012DE102007026387B4 Verfahren zur Herstellung einer Halbleiteranordnung A process for producing a semiconductor device
12/13/2012DE102004002446B4 Anzeigevorrichtung und Verfahren zu deren Herstellung Display device, and process for their preparation
12/13/2012DE10031626B4 Mit hochleitendem Material gefüllte Graben-Struktur und Verfahren zur Herstellung Filled with highly conductive material trench-structure and methods for preparing
12/12/2012EP2533293A1 Amorphous oxide thin film, thin film transistor comprising same, and process for production of the thin film transistor
12/12/2012EP2533292A2 Enhancement mode group III-V high electron mobility transistor (HEMT) and method for fabrication
12/12/2012EP2533291A2 Semiconductor device and method of manufacturing the same
12/12/2012EP2533290A2 High-voltage vertical transistor with a varied width silicon pillar
12/12/2012EP2533270A1 Silicon wafer and semiconductor device
12/12/2012CN202601622U Fast recovery diode
12/12/2012CN202601621U Thin film transistor array substrate, display panel and display device
12/12/2012CN202601620U Fast recovery diode
12/12/2012CN202601619U Thin film transistor, array substrate and display
12/12/2012CN202601604U Bolt type high-voltage thyristor
12/12/2012CN202601575U Semiconductor structure
12/12/2012CN1872836B Organic semiconductor material, organic semiconductor thin film and organic semiconductor device
12/12/2012CN102823011A Organic semiconductor material, organic semiconductor composition, organic thin film, field-effect transistor, and manufacturing method therefor
12/12/2012CN102822998A Semiconductor device and manufacturing method thereof
12/12/2012CN102822982A Bidirectional switch element and bidirectional switch circuit using same
12/12/2012CN102822981A Circuit board, display device, and method for manufacturing circuit board
12/12/2012CN102822980A Method for manufacturing semiconductor device
12/12/2012CN102822979A Semiconductor device
12/12/2012CN102822978A Semiconductor device and method for manufacturing the same
12/12/2012CN102822977A Semiconductor device
12/12/2012CN102822976A Self-aligned contacts for field effect transistor devices
12/12/2012CN102822975A Semiconductor device and method
12/12/2012CN102822968A Semiconductor device provided with semiconductor substrate having diode region and Igbt region
12/12/2012CN102822959A Semiconductor device and method for manufacturing same
12/12/2012CN102822951A Transistor and method of manufacturing the same
12/12/2012CN102822950A Compound semiconductor device and manufacturing method for same
12/12/2012CN102822945A Wiring structure, display device and semiconductor device
12/12/2012CN102822884A Display device, and method for producing array substrate for display device
12/12/2012CN102822397A Epitaxial substrate and method of manufacturing epitaxial substrate
12/12/2012CN102820340A Shallow slot type metal oxide semiconductor diode
12/12/2012CN102820339A Metal oxide semiconductor transistor
12/12/2012CN102820338A Semiconductor device
12/12/2012CN102820337A Radioactive-ray imaging apparatus, radioactive-ray imaging display system and transistor
12/12/2012CN102820336A Semiconductor device, manufacturing method thereof, electronic device and vehicle
12/12/2012CN102820335A Semiconductor device and method for manufacturing same
12/12/2012CN102820334A Fin field effect transistor structure and method for forming fin field effect transistor structure
12/12/2012CN102820333A Mesa-type reverse-blocking diode thyristor chip
12/12/2012CN102820332A Vertical bipolar junction transistor integrated with MOS (metal-oxide semiconductor) tube and method for manufacturing vertical bipolar junction transistor
12/12/2012CN102820331A Semiconductor device suitable for copper manufacture process
12/12/2012CN102820330A Oxide semiconductor devices, methods of manufacturing oxide semiconductor devices, display devices having oxide semiconductor devices, methods of manufacturing display devices having oxide semiconductor devices
12/12/2012CN102820329A Polysilicon gate with nitrogen doped high-K dielectric and silicon dioxide
12/12/2012CN102820328A Semiconductor structure and manufacturing method thereof
12/12/2012CN102820327A Semiconductor structure and method for manufacturing same
12/12/2012CN102820326A Semiconductor device, and method of manufacturing the same
12/12/2012CN102820325A Gallium nitride-based hetero-junction field effect transistor with back electrode structure
12/12/2012CN102820324A Graphene electronic devices having multi-layered gate insulating layer
12/12/2012CN102820323A Nanometer silicon carbide/crystal silicon carbide double graded junction fast recovery diode and preparation method thereof
12/12/2012CN102820322A Gallium nitride (GaN) base enhancement device containing ferroelectric layer and preparation method thereof
12/12/2012CN102820321A Trench MOS structure and method for making the same
12/12/2012CN102820320A Silicon-on-semiinsulator semiconductor device and method for manufacturing same
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