| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/02/2013 | CN102856254A Method of semiconductor manufacturing process |
| 01/02/2013 | CN102856207A Semiconductor structure and manufacturing method thereof |
| 01/02/2013 | CN102856206A Semiconductor structure and manufacturing method thereof |
| 01/02/2013 | CN102856204A Transistor and forming method thereof |
| 01/02/2013 | CN102856203A Metal oxide semiconductor (MOS) transistor and forming method thereof |
| 01/02/2013 | CN102856202A Semiconductor structure and forming method of semiconductor structure, p-channel metal oxide semiconductor (PMOS) transistor and forming method of PMOS transistor |
| 01/02/2013 | CN102856201A MOSFET (metal oxide semiconductor field effect transistor) and manufacturing method thereof |
| 01/02/2013 | CN102856198A Semiconductor structure and preparation method thereof |
| 01/02/2013 | CN102856197A Semiconductor structure and preparation method thereof |
| 01/02/2013 | CN102856195A Method for manufacturing metal-silicon oxide-metal capacitor |
| 01/02/2013 | CN102856193A IGBT (Insulated Gate Bipolar Translator) component and manufacturing method thereof |
| 01/02/2013 | CN102856192A IGBT (insulated gate bipolar transistor) device and manufacturing method thereof |
| 01/02/2013 | CN102856186A Semiconductor structure and manufacturing method thereof |
| 01/02/2013 | CN102856182A Method of making an insulated gate semiconductor device and structure |
| 01/02/2013 | CN102856177A Semiconductor device and method for manufacturing same |
| 01/02/2013 | CN102856169A Method of fabricating thin film transistor and top-gate type thin film transistor |
| 01/02/2013 | CN102280817B Nitride semiconductor device and fabrication method thereof |
| 01/02/2013 | CN102237365B Flash memory device and manufacturing method thereof |
| 01/02/2013 | CN102194894B Electrical-surge-resistance low-voltage-protection silicon diode and manufacturing method thereof |
| 01/02/2013 | CN102184944B Junction terminal structure of lateral power device |
| 01/02/2013 | CN102136492B Memory based on self-assembled QD (Quantum Dots) and preparation method thereof |
| 01/02/2013 | CN102122673B Oxide semiconductor thin film transistor and preparing method thereof |
| 01/02/2013 | CN102110717B Trench metal oxide semiconductor field effect transistor and manufacturing method thereof |
| 01/02/2013 | CN102097441B SOI (Silicon On Insulator) device for plasma display panel driving chip |
| 01/02/2013 | CN102082181B Thin film transistor structure of pixel circuit for organic light emitting device |
| 01/02/2013 | CN102024565B Capacitor structure |
| 01/02/2013 | CN102007596B Semiconductor device |
| 01/02/2013 | CN102005476B Power metal oxide semiconductor field-effect transistor and manufacturing method thereof |
| 01/02/2013 | CN101999081B Acceleration sensor |
| 01/02/2013 | CN101997020B High-voltage transistor device with integrated resistor |
| 01/02/2013 | CN101989550B Method for manufacturing n-metal-oxide-semiconductor (NMOS) transistor |
| 01/02/2013 | CN101976682B Silicon transverse device on N-type insulator for improving current density and preparation process thereof |
| 01/02/2013 | CN101969072B Consumption type N-type lateral double-diffusion metal-oxide semiconductor for reducing voltage |
| 01/02/2013 | CN101930980B Semiconductor device having saddle fin-shaped channel and method for manufacturing the same |
| 01/02/2013 | CN101930919B Semiconductor device and manufacture method thereof |
| 01/02/2013 | CN101911301B MOS device with low on-resistance |
| 01/02/2013 | CN101908560B Semiconductor element and manufacturing method thereof |
| 01/02/2013 | CN101904009B Multi-directional trenching of a die in manufacturing superjunction devices |
| 01/02/2013 | CN101887913B IGBT with improved collector structure |
| 01/02/2013 | CN101884106B Semiconductor module |
| 01/02/2013 | CN101872725B Manufacturing method of semiconductor structure and semiconductor element |
| 01/02/2013 | CN101853809B Semiconductor element and manufacturing method and liquid-crystal display device and manufacturing method thereof |
| 01/02/2013 | CN101752409B Gate structure of semiconductor device and methods of forming word line structure and memory |
| 01/02/2013 | CN101689561B Termination and contact structures for a high voltage gan-based heterojunction transistor |
| 01/02/2013 | CN101651149B HBT structure with controllable working frequency in RF field |
| 01/02/2013 | CN101587912B 半导体装置 Semiconductor device |
| 01/02/2013 | CN101577283B Thin film transistor array arrangement, organic light emitting display device having the same, and manufacturing method thereof |
| 01/02/2013 | CN101577231B Semiconductor device and method of manufacturing the same |
| 01/02/2013 | CN101515582B 半导体装置 Semiconductor device |
| 01/02/2013 | CN101452855B Construction and production process for thin-film transistor of image display system |
| 01/02/2013 | CN101443920B Technique for preparing precursor films and compound layers for thin film solar cell fabrication and apparatus corresponding thereto |
| 01/02/2013 | CN101432852B 非易失性存储器件 Non-volatile memory device |
| 01/02/2013 | CN101359686B Reliable normally-off iii-nitride active device structures, and related methods and systems |
| 01/02/2013 | CN101354511B Liquid crystal display device and electronic device |
| 01/02/2013 | CN101341591B Semiconductor device and method for manufacturing same |
| 01/02/2013 | CN101281928B Semiconductor device and uses thereof |
| 01/02/2013 | CN101273459B 半导体纳米线晶体管 The semiconductor nanowire transistors |
| 01/02/2013 | CN101246901B Semiconductor transistor device and method of manufacturing the same |
| 01/02/2013 | CN101213671B Method for making electronic devices using metal oxide nanoparticles |
| 01/01/2013 | US8344524 Wire bonding method for preventing polymer cracking |
| 01/01/2013 | US8344522 Solder structure, method for forming the solder structure, and semiconductor module including the solder structure |
| 01/01/2013 | US8344520 Stacked structure of chips |
| 01/01/2013 | US8344516 Integrated chip carrier with compliant interconnects |
| 01/01/2013 | US8344514 Semiconductor device structures and electronic devices including same hybrid conductive vias |
| 01/01/2013 | US8344511 Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy |
| 01/01/2013 | US8344501 Multilayer wiring substrate having a castellation structure |
| 01/01/2013 | US8344499 Chip-exposed semiconductor device |
| 01/01/2013 | US8344494 Layered chip package and method of manufacturing same |
| 01/01/2013 | US8344484 Semiconductor device |
| 01/01/2013 | US8344483 Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same |
| 01/01/2013 | US8344482 Etching apparatus and etching method for substrate bevel |
| 01/01/2013 | US8344481 Bipolar transistors with hump regions |
| 01/01/2013 | US8344480 Insulated gate bipolar transistor |
| 01/01/2013 | US8344478 Inductors having inductor axis parallel to substrate surface |
| 01/01/2013 | US8344475 Integrated circuit heating to effect in-situ annealing |
| 01/01/2013 | US8344472 Semiconductor device and method |
| 01/01/2013 | US8344467 Storage element and storage device |
| 01/01/2013 | US8344466 Process for manufacturing MEMS devices having buried cavities and MEMS device obtained thereby |
| 01/01/2013 | US8344465 Semiconductor device |
| 01/01/2013 | US8344460 Method for forming a nickelsilicide FUSI gate |
| 01/01/2013 | US8344459 Semiconductor device |
| 01/01/2013 | US8344457 Insulated-gate semiconductor device with protection diode |
| 01/01/2013 | US8344455 Semiconductor device and fabrication method for the same |
| 01/01/2013 | US8344452 Metal gate transistors with raised source and drain regions formed on heavily doped substrate |
| 01/01/2013 | US8344451 Semiconductor device |
| 01/01/2013 | US8344450 Semiconductor device with buried bit lines and method for fabricating the same |
| 01/01/2013 | US8344449 Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained |
| 01/01/2013 | US8344448 Semiconductor device having an edge termination structure and method of manufacture thereof |
| 01/01/2013 | US8344447 Silicon layer for stopping dislocation propagation |
| 01/01/2013 | US8344446 Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion region |
| 01/01/2013 | US8344445 Non-volatile semiconductor memory cell with dual functions |
| 01/01/2013 | US8344444 Semiconductor device having a nonvolatile memory cell with a cap insulating film formed over a selection gate electrode |
| 01/01/2013 | US8344443 Single poly NVM devices and arrays |
| 01/01/2013 | US8344442 Nonvolatile semiconductor memory having a gate electrode with a round-arched shape |
| 01/01/2013 | US8344441 Nonvolatile semiconductor memory device |
| 01/01/2013 | US8344440 Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times |
| 01/01/2013 | US8344439 Integrated circuit capacitors having composite dielectric layers therein containing crystallization inhibiting regions and methods of forming same |
| 01/01/2013 | US8344438 Electrode of an integrated circuit |
| 01/01/2013 | US8344437 Semiconductor device with vertical channel transistor |
| 01/01/2013 | US8344434 Semiconductor device having ferroelectric capacitor |