Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2012
12/19/2012EP2534679A1 Semiconductor device and driving method of the same
12/19/2012EP2534673A1 Method for manufacturing a metal oxide semiconductor
12/19/2012EP2534092A2 Semiconductor component and corresponding production method
12/19/2012CN202616237U Rapid super junction VDMOS
12/19/2012CN202616236U Super junction VDMOS with P-type buried layer
12/19/2012CN202616235U Super junction VDMOS
12/19/2012CN202616234U High electron mobility transistor with grid edge groove type source field plate structure
12/19/2012CN202616233U A tensile strain germanium thin film epitaxy structure
12/19/2012CN1734755B Solderable top metalization and passivation for source mounted package
12/19/2012CN102834922A Semiconductor device
12/19/2012CN102834921A Method for manufacturing semiconductor device
12/19/2012CN102834920A Low leakage gan mosfet
12/19/2012CN102834919A High voltage SCRMOS in BiCMOS process technologies
12/19/2012CN102834914A Method for manufacturing laminated body, and laminated body
12/19/2012CN102834902A Etching method and device
12/19/2012CN102832257A MIM structure device used to test SiNx insulating layer
12/19/2012CN102832256A Tunneling field effect transistor
12/19/2012CN102832255A Thin-film transistor component
12/19/2012CN102832254A Array substrate, method for producing same and display panel
12/19/2012CN102832253A Thin film transistor,
12/19/2012CN102832252A Flexible indium gallium zinc oxide (IGZO) thin film transistor
12/19/2012CN102832251A Flexible semitransparent indium gallium zinc oxide (IGZO) thin film transistor
12/19/2012CN102832250A Method for partitioning ring grating irradiation-resistant metal-oxide-semiconductor field-effect transistor (MOSFET)
12/19/2012CN102832249A Metal oxide semiconductor (MOS) type power semiconductor device
12/19/2012CN102832248A Silicon carbide MOSFET (metal-oxide-semiconductor field effect transistor) based on semi-super junction and manufacturing method
12/19/2012CN102832247A Split-gate structure in trench-based silicon carbide power device
12/19/2012CN102832246A Semiconductor device and method of manufacturing the same
12/19/2012CN102832245A Super junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device with optimized avalanche breakdown current path
12/19/2012CN102832244A Semiconductor device with device-side electrode exposed at substrate end and manufacture method thereof
12/19/2012CN102832243A Semiconductor device and manufacturing method thereof
12/19/2012CN102832242A Semiconductor device with groove MOS (Metal Oxide Semiconductor) structure and manufacturing method thereof
12/19/2012CN102832241A Gallium-nitride-base heterostructure field effect transistor with transverse p-n junction composite buffering layer structure
12/19/2012CN102832240A Insulated gate bipolar transistor with dielectric layer at collector terminal
12/19/2012CN102832239A High-pressure-resistant insulated gate bipolar transistor (IGBT)
12/19/2012CN102832238A Silicon carbide device with ohmic contact protection layer and production method of silicon carbide device
12/19/2012CN102832237A Trough-type semiconductor power device
12/19/2012CN102832236A Strained channel field effect transistor
12/19/2012CN102832235A Oxide semiconductor and method for manufacturing same
12/19/2012CN102832234A Groove type semiconductor power device, method for producing same and terminal protection structure
12/19/2012CN102832233A SCR (silicon controlled rectifier) type LDMOS ESD (lateral double diffusion metal-oxide-semiconductor device electrostatic discharge) device
12/19/2012CN102832232A Silicon-controlled rectifier lateral double diffused metal oxide semiconductor with high maintaining voltage
12/19/2012CN102832231A Compound semiconductor device and method of manufacturing the same
12/19/2012CN102832228A Display device and electronic apparatus
12/19/2012CN102832218A Strain SiGe vertical CMOS (complementary metal-oxide-semiconductor transistor) integrated device and preparation method thereof
12/19/2012CN102832216A Semiconductor device including insulated gate bipolar transistor and diode
12/19/2012CN102832215A Large dimension device and method of manufacturing same in gate last process
12/19/2012CN102832213A Lateral insulator gate bipolar transistor (LIGBT) device with electronic static discharge (ESD) protection function
12/19/2012CN102832212A Array substrate, display device and drive method thereof
12/19/2012CN102832211A High voltage resistor with PIN diode isolation
12/19/2012CN102832172A Low-voltage metal gate complementary metal oxide semiconductor and manufacturing method thereof
12/19/2012CN102832170A Manufacturing method of array substrate, array substrate and display device
12/19/2012CN102832146A IGBT (insulated gate bipolar translator) module packaging process and IGBT module with bidirectional heat radiation
12/19/2012CN102832136A Dual bit NROM (nitride read only memory) and method and structure for increasing electron injection efficiency thereof
12/19/2012CN102832128A Manufacturing method of semiconductor device
12/19/2012CN102832127A Metal source-drain SOI (Silicon On Insulator) MOS (Metal Oxide Semiconductor) transistor and forming method thereof
12/19/2012CN102832126A Semiconductor structure and manufacturing method thereof
12/19/2012CN102832122A Bipolar punch-through semiconductor device and method for manufacturing the same
12/19/2012CN102280476B Pseudomorphic high electron mobility transistor and manufacturing method thereof
12/19/2012CN102263102B Backward diode-triggered thyristor for electrostatic protection
12/19/2012CN102254821B Metal oxide semiconductor (MOS) capacitor based on silicon-on-insulator (SOI) material and method for making MOS capacitor
12/19/2012CN102222687B Germanium-based NMOS (N-metal-oxide-semiconductor) device and preparation method thereof
12/19/2012CN102184956B Longitudinal conduction GaN enhancement type MISFET (Metal Integrated Semiconductor Field Effect Transistor) device and manufacturing method thereof
12/19/2012CN102184955B Complementary tunneling field effect transistor and forming method thereof
12/19/2012CN102157556B Oxidizing-dephlegmation-based silicon-based wrap gate transistor with buried-channel structure and preparation method thereof
12/19/2012CN102122660B Integrated circuit structure
12/19/2012CN102117834B Multiple source MOS transistor with impurity segregation and production method thereof
12/19/2012CN102054869B Graphene device and manufacturing method thereof
12/19/2012CN102054857B 集成电路结构 Integrated circuit structure
12/19/2012CN102034866B 集成电路结构 Integrated circuit structure
12/19/2012CN101986435B Manufacturing method of metal oxide semiconductor (MOS) device structure for preventing floating body and self-heating effect
12/19/2012CN101960535B Transparent thin-film electrode
12/19/2012CN101958322B High-performance CMOS (Complementary Metal-Oxide-Semiconductor Transistor) device
12/19/2012CN101946322B 碳化硅半导体装置 The silicon carbide semiconductor device
12/19/2012CN101946307B Semiconductor substrate, method of manufacturing a semiconductor substrate, and electronic device
12/19/2012CN101924105B 集成电路结构 Integrated circuit structure
12/19/2012CN101866891B 半导体电路 Semiconductor circuit
12/19/2012CN101821211B Method of fastening lamellae of a lamellar material to suitable substrate
12/19/2012CN101752254B Ion implantation zone forming method, MOS transistor and manufacture method thereof
12/19/2012CN101494242B Thin film transistor and method of fabricating a thin film transistor, and organic LED display device
12/19/2012CN101454895B 半导体输入控制装置 The semiconductor input control device
12/19/2012CN101378062B Ed inverting circuit and integrated circuit element including the same
12/19/2012CN101331612B 集成高压二极管及制造方法 Integrated high-voltage diode and method of manufacture
12/19/2012CN101278377B Semiconductor substrate and method for manufacturing same
12/18/2012US8335111 Non-volatile semiconductor storage device and method of manufacturing the same
12/18/2012US8335059 Tunneling magnetoresistive effect element and spin MOS field-effect
12/18/2012US8334958 Liquid crystal display and thin film transistor array panel therefor
12/18/2012US8334939 Liquid crystal display device and a manufacturing method of the same
12/18/2012US8334759 Semiconductor device, method of manufacturing thereof, signal transmission/reception method using such semiconductor device, and tester apparatus
12/18/2012US8334602 Die package including encapsulated die and method of manufacturing the same
12/18/2012US8334600 Low-noise flip-chip packages and flip chips thereof
12/18/2012US8334598 Power semiconductor device and manufacturing method therefor
12/18/2012US8334597 Semiconductor device having via connecting between interconnects
12/18/2012US8334593 Semiconductor device package
12/18/2012US8334579 Schottky diode
12/18/2012US8334576 High frequency MOS device and manufacturing process thereof
12/18/2012US8334574 Semiconductor contact structure and method of fabricating the same
12/18/2012US8334571 Junction varactor for ESD protection of RF circuits
12/18/2012US8334569 Transistor with embedded Si/Ge material having enhanced across-substrate uniformity
12/18/2012US8334568 Semiconductor device and method for producing the same
12/18/2012US8334567 LDMOS using a combination of enhanced dielectric stress layer and dummy gates
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