Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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01/09/2013 | CN102867856A High-voltage semiconductor element |
01/09/2013 | CN102867855A Amorphous oxide and thin film transistor |
01/09/2013 | CN102867854A 半导体装置及其制造方法 Semiconductor device and manufacturing method |
01/09/2013 | CN102867853A Metal oxide semiconductor field transistor |
01/09/2013 | CN102867852A Transistor and method for forming same |
01/09/2013 | CN102867851A Ion beam current signal amplifier and manufacturing method thereof |
01/09/2013 | CN102867850A Semiconductor device with a high-k gate dielectric and a metal gate electrode |
01/09/2013 | CN102867849A Fast recovery diode and manufacturing method thereof |
01/09/2013 | CN102867848A Trench type power semiconductor element and manufacturing method thereof |
01/09/2013 | CN102867847A Semiconductor device, fabrication method for a semiconductor device and electronic apparatus |
01/09/2013 | CN102867846A Semiconductor device |
01/09/2013 | CN102867845A N type longitudinal high-voltage tolerance transverse double diffused metal oxide semiconductor transistor |
01/09/2013 | CN102867844A P-shaped longitudinal highly-pressure-resistant transverse double-diffusion metal oxide semiconductor transistor |
01/09/2013 | CN102867843A Isolated transistors and diodes and isolation and termination structures for semiconductor die |
01/09/2013 | CN102867842A Super junction device and manufacturing method thereof |
01/09/2013 | CN102867825A Trenched-gate field effect transistors and methods of forming the same |
01/09/2013 | CN102867785A Nonvolatile memory device and manufacturing method thereof |
01/09/2013 | CN102867784A Semiconductor device with a dislocation structure and method of forming the same |
01/09/2013 | CN102867754A Two-dimensional material nanometer device based on inversion process and forming method of two-dimensional material nanometer device |
01/09/2013 | CN102867753A Radio frequency power transistor based on inversion process and forming method thereof |
01/09/2013 | CN102867750A MOSFET (metal oxide semiconductor field effect transistor) and manufacturing method thereof |
01/09/2013 | CN102867748A Transistor and manufacturing method thereof as well as semiconductor chip with transistor |
01/09/2013 | CN102867746A Method for processing diode and diode |
01/09/2013 | CN102299153B Power semiconductor assembly with low grid input resistance and manufacturing method thereof |
01/09/2013 | CN102244092B Junction termination structure of transverse high-pressure power semiconductor device |
01/09/2013 | CN102231365B Preparation method of non-volatile charge storage device, non-volatile charge storage device and application of device |
01/09/2013 | CN102222700B 薄膜晶体管元件及其制作方法 The thin film transistor device and manufacturing method |
01/09/2013 | CN102201449B Low-heat-resistance packaging structure of power MOS (Metal Oxide Semiconductor) device |
01/09/2013 | CN102201405B Imaging-based silicon-on-insulator-electro-static discharge (SOI-ESD) protective device and manufacturing method thereof |
01/09/2013 | CN102194818B P-type epitaxial layer-based binary coded decimal (BCD) integrated device and manufacturing method thereof |
01/09/2013 | CN102157555B Finfet device |
01/09/2013 | CN102130163B ESD (electrostatic discharge) high-voltage DMOS (diffused metal oxide semiconductor) device and manufacturing method thereof |
01/09/2013 | CN102130151B 双极晶体管 Bipolar Transistors |
01/09/2013 | CN102104042B Semiconductor device |
01/09/2013 | CN102082182B Polycrystalline diode applying germanium-silicon process and manufacturing method thereof |
01/09/2013 | CN102064202B Lightly doped diode structure applied to germanium-silicon triode |
01/09/2013 | CN102047428B A new type of gapless semiconductor material |
01/09/2013 | CN102047396B Flexible semiconductor device and method for manufacturing same |
01/09/2013 | CN101996996B CMOS (complementary metaloxide semiconductor) device and manufacturing method thereof |
01/09/2013 | CN101783347B Nonvolatile memory |
01/09/2013 | CN101777579B Electrostatic protection element of isolated silicon-controlled rectifier |
01/09/2013 | CN101740621B Tunnel field-effect transistor with metal source |
01/09/2013 | CN101599495B Thin-film transistor panel |
01/09/2013 | CN101512774B 半导体装置 Semiconductor device |
01/09/2013 | CN101499421B Mesa type semiconductor device and manufacturing method thereof |
01/08/2013 | US8351243 Transistor driven 3D memory |
01/08/2013 | US8350391 Sheet structure, semiconductor device and method of growing carbon structure |
01/08/2013 | US8350390 Wiring substrate and semiconductor device |
01/08/2013 | US8350389 Semiconductor device and information processing system including the same |
01/08/2013 | US8350382 Semiconductor device including electronic component coupled to a backside of a chip |
01/08/2013 | US8350375 Flipchip bump patterns for efficient I-mesh power distribution schemes |
01/08/2013 | US8350372 Semiconductor device including a DC-DC converter |
01/08/2013 | US8350366 Power semiconductor element with two-stage impurity concentration profile |
01/08/2013 | US8350363 Electric via comprising lateral outgrowths |
01/08/2013 | US8350362 Semiconductor integrated circuit and method for fabricating the same |
01/08/2013 | US8350361 Semiconductor element having a conductive via and method for making the same and package having a semiconductor element with a conductive via |
01/08/2013 | US8350359 Semiconductor device using an aluminum interconnect to form through-silicon vias |
01/08/2013 | US8350358 Techniques for placement of active and passive devices within a chip |
01/08/2013 | US8350352 Bipolar transistor |
01/08/2013 | US8350348 Magnetic memory devices and methods of forming the same |
01/08/2013 | US8350347 Writable magnetic element |
01/08/2013 | US8350346 Integrated MEMS devices with controlled pressure environments by means of enclosed volumes |
01/08/2013 | US8350345 Three-dimensional input control device |
01/08/2013 | US8350344 Semiconductor device and method of fabricating the same |
01/08/2013 | US8350343 Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage |
01/08/2013 | US8350342 Semiconductor device |
01/08/2013 | US8350340 Structure of output stage |
01/08/2013 | US8350336 Semiconductor device and method of manufacturing the same |
01/08/2013 | US8350330 Dummy pattern design for reducing device performance drift |
01/08/2013 | US8350328 Semiconductor device and method of manufacturing the same |
01/08/2013 | US8350327 High voltage device with reduced leakage |
01/08/2013 | US8350326 Nonvolatile semiconductor memory device |
01/08/2013 | US8350325 Power semiconductor device |
01/08/2013 | US8350324 Semiconductor device |
01/08/2013 | US8350323 Semiconductor device |
01/08/2013 | US8350322 Semiconductor device and method for manufacturing the same |
01/08/2013 | US8350321 Semiconductor device having saddle fin transistor and manufacturing method of the same |
01/08/2013 | US8350320 Memory array and memory device |
01/08/2013 | US8350319 Semiconductor device |
01/08/2013 | US8350318 Method of forming an MOS transistor and structure therefor |
01/08/2013 | US8350317 Power semiconductor devices and methods of manufacture |
01/08/2013 | US8350316 Phase change memory cells having vertical channel access transistor and memory plane |
01/08/2013 | US8350315 Memory devices capable of reducing lateral movement of charges |
01/08/2013 | US8350314 Semiconductor memory device and method for fabricating semiconductor memory device |
01/08/2013 | US8350313 Nonvolatile memory transistor |
01/08/2013 | US8350309 Nonvolatile semiconductor memory |
01/08/2013 | US8350307 Semiconductor memory device with power decoupling capacitors and method of fabrication |
01/08/2013 | US8350304 Junction-field-effect-transistor devices and methods of manufacturing the same |
01/08/2013 | US8350302 Organic light emitting display apparatus |
01/08/2013 | US8350299 Memory with high dielectric constant antifuses adapted for use at low voltage |
01/08/2013 | US8350298 Hybrid material inversion mode GAA CMOSFET |
01/08/2013 | US8350297 Compound semiconductor device and production method thereof |
01/08/2013 | US8350296 Enhancement mode III-nitride device with floating gate and process for its manufacture |
01/08/2013 | US8350295 Device structure including high-thermal-conductivity substrate |
01/08/2013 | US8350294 Compensated gate MISFET and method for fabricating the same |
01/08/2013 | US8350293 Field effect transistor and method of manufacturing the same |
01/08/2013 | US8350292 Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor |
01/08/2013 | US8350291 Modulation-doped multi-gate devices |
01/08/2013 | US8350289 Semiconductor device |
01/08/2013 | US8350280 Light emitting diode with light conversion |