Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
01/2013
01/09/2013CN102867856A High-voltage semiconductor element
01/09/2013CN102867855A Amorphous oxide and thin film transistor
01/09/2013CN102867854A 半导体装置及其制造方法 Semiconductor device and manufacturing method
01/09/2013CN102867853A Metal oxide semiconductor field transistor
01/09/2013CN102867852A Transistor and method for forming same
01/09/2013CN102867851A Ion beam current signal amplifier and manufacturing method thereof
01/09/2013CN102867850A Semiconductor device with a high-k gate dielectric and a metal gate electrode
01/09/2013CN102867849A Fast recovery diode and manufacturing method thereof
01/09/2013CN102867848A Trench type power semiconductor element and manufacturing method thereof
01/09/2013CN102867847A Semiconductor device, fabrication method for a semiconductor device and electronic apparatus
01/09/2013CN102867846A Semiconductor device
01/09/2013CN102867845A N type longitudinal high-voltage tolerance transverse double diffused metal oxide semiconductor transistor
01/09/2013CN102867844A P-shaped longitudinal highly-pressure-resistant transverse double-diffusion metal oxide semiconductor transistor
01/09/2013CN102867843A Isolated transistors and diodes and isolation and termination structures for semiconductor die
01/09/2013CN102867842A Super junction device and manufacturing method thereof
01/09/2013CN102867825A Trenched-gate field effect transistors and methods of forming the same
01/09/2013CN102867785A Nonvolatile memory device and manufacturing method thereof
01/09/2013CN102867784A Semiconductor device with a dislocation structure and method of forming the same
01/09/2013CN102867754A Two-dimensional material nanometer device based on inversion process and forming method of two-dimensional material nanometer device
01/09/2013CN102867753A Radio frequency power transistor based on inversion process and forming method thereof
01/09/2013CN102867750A MOSFET (metal oxide semiconductor field effect transistor) and manufacturing method thereof
01/09/2013CN102867748A Transistor and manufacturing method thereof as well as semiconductor chip with transistor
01/09/2013CN102867746A Method for processing diode and diode
01/09/2013CN102299153B Power semiconductor assembly with low grid input resistance and manufacturing method thereof
01/09/2013CN102244092B Junction termination structure of transverse high-pressure power semiconductor device
01/09/2013CN102231365B Preparation method of non-volatile charge storage device, non-volatile charge storage device and application of device
01/09/2013CN102222700B 薄膜晶体管元件及其制作方法 The thin film transistor device and manufacturing method
01/09/2013CN102201449B Low-heat-resistance packaging structure of power MOS (Metal Oxide Semiconductor) device
01/09/2013CN102201405B Imaging-based silicon-on-insulator-electro-static discharge (SOI-ESD) protective device and manufacturing method thereof
01/09/2013CN102194818B P-type epitaxial layer-based binary coded decimal (BCD) integrated device and manufacturing method thereof
01/09/2013CN102157555B Finfet device
01/09/2013CN102130163B ESD (electrostatic discharge) high-voltage DMOS (diffused metal oxide semiconductor) device and manufacturing method thereof
01/09/2013CN102130151B 双极晶体管 Bipolar Transistors
01/09/2013CN102104042B Semiconductor device
01/09/2013CN102082182B Polycrystalline diode applying germanium-silicon process and manufacturing method thereof
01/09/2013CN102064202B Lightly doped diode structure applied to germanium-silicon triode
01/09/2013CN102047428B A new type of gapless semiconductor material
01/09/2013CN102047396B Flexible semiconductor device and method for manufacturing same
01/09/2013CN101996996B CMOS (complementary metaloxide semiconductor) device and manufacturing method thereof
01/09/2013CN101783347B Nonvolatile memory
01/09/2013CN101777579B Electrostatic protection element of isolated silicon-controlled rectifier
01/09/2013CN101740621B Tunnel field-effect transistor with metal source
01/09/2013CN101599495B Thin-film transistor panel
01/09/2013CN101512774B 半导体装置 Semiconductor device
01/09/2013CN101499421B Mesa type semiconductor device and manufacturing method thereof
01/08/2013US8351243 Transistor driven 3D memory
01/08/2013US8350391 Sheet structure, semiconductor device and method of growing carbon structure
01/08/2013US8350390 Wiring substrate and semiconductor device
01/08/2013US8350389 Semiconductor device and information processing system including the same
01/08/2013US8350382 Semiconductor device including electronic component coupled to a backside of a chip
01/08/2013US8350375 Flipchip bump patterns for efficient I-mesh power distribution schemes
01/08/2013US8350372 Semiconductor device including a DC-DC converter
01/08/2013US8350366 Power semiconductor element with two-stage impurity concentration profile
01/08/2013US8350363 Electric via comprising lateral outgrowths
01/08/2013US8350362 Semiconductor integrated circuit and method for fabricating the same
01/08/2013US8350361 Semiconductor element having a conductive via and method for making the same and package having a semiconductor element with a conductive via
01/08/2013US8350359 Semiconductor device using an aluminum interconnect to form through-silicon vias
01/08/2013US8350358 Techniques for placement of active and passive devices within a chip
01/08/2013US8350352 Bipolar transistor
01/08/2013US8350348 Magnetic memory devices and methods of forming the same
01/08/2013US8350347 Writable magnetic element
01/08/2013US8350346 Integrated MEMS devices with controlled pressure environments by means of enclosed volumes
01/08/2013US8350345 Three-dimensional input control device
01/08/2013US8350344 Semiconductor device and method of fabricating the same
01/08/2013US8350343 Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage
01/08/2013US8350342 Semiconductor device
01/08/2013US8350340 Structure of output stage
01/08/2013US8350336 Semiconductor device and method of manufacturing the same
01/08/2013US8350330 Dummy pattern design for reducing device performance drift
01/08/2013US8350328 Semiconductor device and method of manufacturing the same
01/08/2013US8350327 High voltage device with reduced leakage
01/08/2013US8350326 Nonvolatile semiconductor memory device
01/08/2013US8350325 Power semiconductor device
01/08/2013US8350324 Semiconductor device
01/08/2013US8350323 Semiconductor device
01/08/2013US8350322 Semiconductor device and method for manufacturing the same
01/08/2013US8350321 Semiconductor device having saddle fin transistor and manufacturing method of the same
01/08/2013US8350320 Memory array and memory device
01/08/2013US8350319 Semiconductor device
01/08/2013US8350318 Method of forming an MOS transistor and structure therefor
01/08/2013US8350317 Power semiconductor devices and methods of manufacture
01/08/2013US8350316 Phase change memory cells having vertical channel access transistor and memory plane
01/08/2013US8350315 Memory devices capable of reducing lateral movement of charges
01/08/2013US8350314 Semiconductor memory device and method for fabricating semiconductor memory device
01/08/2013US8350313 Nonvolatile memory transistor
01/08/2013US8350309 Nonvolatile semiconductor memory
01/08/2013US8350307 Semiconductor memory device with power decoupling capacitors and method of fabrication
01/08/2013US8350304 Junction-field-effect-transistor devices and methods of manufacturing the same
01/08/2013US8350302 Organic light emitting display apparatus
01/08/2013US8350299 Memory with high dielectric constant antifuses adapted for use at low voltage
01/08/2013US8350298 Hybrid material inversion mode GAA CMOSFET
01/08/2013US8350297 Compound semiconductor device and production method thereof
01/08/2013US8350296 Enhancement mode III-nitride device with floating gate and process for its manufacture
01/08/2013US8350295 Device structure including high-thermal-conductivity substrate
01/08/2013US8350294 Compensated gate MISFET and method for fabricating the same
01/08/2013US8350293 Field effect transistor and method of manufacturing the same
01/08/2013US8350292 Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor
01/08/2013US8350291 Modulation-doped multi-gate devices
01/08/2013US8350289 Semiconductor device
01/08/2013US8350280 Light emitting diode with light conversion