Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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01/03/2013 | US20130001713 Magnetoresistive element and magnetic memory using the same |
01/03/2013 | US20130001712 Acceleration sensor |
01/03/2013 | US20130001711 Manufacturing method for a micromechanical component, corresponding composite component, and corresponding micromechanical component |
01/03/2013 | US20130001710 Process for a sealed mems device with a portion exposed to the environment |
01/03/2013 | US20130001709 Systems and methods for vertically stacking a sensor on an integrated circuit chip |
01/03/2013 | US20130001708 Transistors having a gate comprising a titanium nitride layer and method for depositing this layer |
01/03/2013 | US20130001707 Fabricating method of mos transistor, fin field-effect transistor and fabrication method thereof |
01/03/2013 | US20130001706 Method and Structure for Low Resistive Source and Drain Regions in a Replacement Metal Gate Process Flow |
01/03/2013 | US20130001705 Epitaxy Profile Engineering for FinFETs |
01/03/2013 | US20130001698 Method to modify the shape of a cavity using angled implantation |
01/03/2013 | US20130001695 Uni-directional transient voltage suppressor (tvs) |
01/03/2013 | US20130001692 Semiconductor Devices Including a Layer of Polycrystalline Silicon Having a Smooth Morphology |
01/03/2013 | US20130001691 Semiconductor structure and method for manufacturing the same |
01/03/2013 | US20130001690 Mosfet and method for manufacturing the same |
01/03/2013 | US20130001688 Self-aligned body fully isolated device |
01/03/2013 | US20130001687 Transistor with Reduced Channel Length Variation |
01/03/2013 | US20130001686 Electro-static discharge protection device |
01/03/2013 | US20130001685 Semiconductor Device |
01/03/2013 | US20130001684 Method of manufacturing trench mosfet using three masks process having tilt- angle source implants |
01/03/2013 | US20130001682 Semiconductor structures including bodies of semiconductor material, devices including such structures and related methods |
01/03/2013 | US20130001681 Mos-driven semiconductor device and method for manufacturing mos-driven semiconductor device |
01/03/2013 | US20130001680 Semiconductor device, and method for manufacturing the same |
01/03/2013 | US20130001679 Semiconductor device and manufacturing method thereof |
01/03/2013 | US20130001678 High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof |
01/03/2013 | US20130001677 Semiconductor device, method of manufacturing the semiconductor device, and electronic device |
01/03/2013 | US20130001676 Through silicon via direct fet signal gating |
01/03/2013 | US20130001675 Semiconductor devices and methods for manufacturing the same |
01/03/2013 | US20130001674 Semiconductor device with voltage compensation structure |
01/03/2013 | US20130001673 Fortification of charge storing material in high k dielectric environments and resulting apparatuses |
01/03/2013 | US20130001672 Semiconductor device |
01/03/2013 | US20130001671 Select gates for memory |
01/03/2013 | US20130001670 Semiconductor device and method of manufacturing semiconductor device |
01/03/2013 | US20130001669 Semiconductor memory devices and methods of manufacturing the same |
01/03/2013 | US20130001668 Floating gate device with oxygen scavenging element |
01/03/2013 | US20130001667 Nonvolatile memory device and method for making the same |
01/03/2013 | US20130001666 Memory Cells, Arrays Of Memory Cells, And Methods Of Forming Memory Cells |
01/03/2013 | US20130001665 Mosfet and method for manufacturing the same |
01/03/2013 | US20130001660 Planar field effect transistor structure and method |
01/03/2013 | US20130001659 Self-aligned iii-v mosfet diffusion regions and silicide-like alloy contact |
01/03/2013 | US20130001658 Corner transistor and method of fabricating the same |
01/03/2013 | US20130001657 Self-aligned iii-v mosfet diffusion regions and silicide-like alloy contact |
01/03/2013 | US20130001656 Vertically pinched junction field effect transistor |
01/03/2013 | US20130001655 Heat Dissipation Structure of SOI Field Effect Transistor |
01/03/2013 | US20130001654 Mask-based silicidation for feol defectivity reduction and yield boost |
01/03/2013 | US20130001653 Chemically-sensitive field effect transistor based pixel array with protection diodes |
01/03/2013 | US20130001652 Magnetoresistive element and method of manufacturing the same |
01/03/2013 | US20130001648 Gated AlGaN/GaN Schottky Device |
01/03/2013 | US20130001647 Integration of vertical bjt or hbt into soi technology |
01/03/2013 | US20130001646 ALGaN/GaN HYBRID MOS-HFET |
01/03/2013 | US20130001645 Semiconductor epitaxial substrate |
01/03/2013 | US20130001644 Nitride Semiconductor Epitaxial Substrate and Nitride Semiconductor Device |
01/03/2013 | US20130001642 Method including producing a monocrystalline layer |
01/03/2013 | US20130001641 Defect Mitigation Structures For Semiconductor Devices |
01/03/2013 | US20130001640 Semiconductor device having a floating semiconductor zone |
01/03/2013 | US20130001639 Semiconductor device comprising semiconductor substrate having diode region and igbt region |
01/03/2013 | US20130001638 Semiconductor device |
01/03/2013 | US20130001594 Electronic Device |
01/03/2013 | US20130001593 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods |
01/03/2013 | US20130001592 Silicon carbide semiconductor device |
01/03/2013 | US20130001591 Finfet design and method of fabricating same |
01/03/2013 | US20130001589 Lateral extended drain metal oxide semiconductor field effect transistor (ledmosfet) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor |
01/03/2013 | US20130001587 High electron mobility transistors and methods of manufacturing the same |
01/03/2013 | US20130001586 Semiconductor substrate and method of manufacturing |
01/03/2013 | US20130001583 Semiconductor device and fabrication method thereof |
01/03/2013 | US20130001582 Semiconductor Device and A Method of Manufacturing the Same |
01/03/2013 | US20130001581 Active matrix liquid crystal display device |
01/03/2013 | US20130001580 Thin film transistor and organic light emitting diode display using the same and method for manufacturing the same |
01/03/2013 | US20130001577 Backplane for flat panel display apparatus, flat panel display apparatus including the same, and method of manufacturing backplane for flat panel display apparatus |
01/03/2013 | US20130001576 Semiconductor device including metal silicide layer and method for manufacturing the same |
01/03/2013 | US20130001575 Methods for stressing transistor channels of a semiconductor device structure, and a related semiconductor device structure |
01/03/2013 | US20130001574 Field transistor structure manufactured using gate last process |
01/03/2013 | US20130001573 Thin film transistor and method of manufacturing the same |
01/03/2013 | US20130001568 Semiconductor device and fabrication method thereof |
01/03/2013 | US20130001561 Semiconductor Device and Method of Manufacturing Same |
01/03/2013 | US20130001560 Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and el television |
01/03/2013 | US20130001559 Thin-film transistor and method for manufacturing thin-film transistor |
01/03/2013 | US20130001558 Semiconductor device and manufacturing method of semiconductor device |
01/03/2013 | US20130001557 Semiconductor device and manufacturing method thereof |
01/03/2013 | US20130001556 Thin film transistor and press sensing device using the same |
01/03/2013 | US20130001555 Semiconductor structure and method for manufacturing the same |
01/03/2013 | US20130001554 Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor |
01/03/2013 | US20130001553 Semiconductor devices having reduced substrate damage and associated methods |
01/03/2013 | US20130001550 Hermetically sealed mems device with a portion exposed to the environment with vertically integrated electronics |
01/03/2013 | US20130001549 Method of manufacturing semiconductor device and semiconductor device |
01/03/2013 | US20130001546 Display device and method for producing array substrate for display device |
01/03/2013 | US20130001545 Semiconductor device and method for manufacturing the same |
01/03/2013 | US20130001544 Semiconductor device and method for manufacturing the same |
01/03/2013 | US20130001519 Graphene devices with local dual gates |
01/03/2013 | US20130001518 Fabrication of graphene nanoelectronic devices on soi structures |
01/03/2013 | US20130001517 Generation of multiple diameter nanowire field effect transistors |
01/03/2013 | US20130001516 Graphite and/or graphene semiconductor devices |
01/03/2013 | US20130001515 Direct growth of graphene on substrates |
01/03/2013 | US20130001507 Semiconductor device and method |
01/03/2013 | US20130001428 Radiation detecting device and method of operating |
01/03/2013 | US20130000136 Magnetoresistive sensor and manufacturing method thereof |
01/03/2013 | DE112011101069T5 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device |
01/03/2013 | DE112011100907T5 Einheiten auf der Grundlage von Graphenkanälen und Verfahren zu deren Fertigung Units on the basis of graphs channels and methods for their production |
01/03/2013 | DE112011100901T5 Graphen/Nanostruktur-FET mit selbstausgerichteter Kontakt- und Gate-Zone Graphs / nanostructure-FET with self-aligned contact and gate region |
01/03/2013 | DE112010004296T5 Verfahren zur Herstellung einer Halbleitervorrichtung A process for producing a semiconductor device |
01/03/2013 | DE102012211221A1 Siliciumcarbid-Halbleitervorrichtung Silicon carbide semiconductor device |