Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2012
12/05/2012CN102122654B 变容管及其制造方法 Varactor and its manufacturing method
12/05/2012CN102097439B Semiconductor device
12/05/2012CN102082173B Raceway-shaped N-type laterally diffused metal oxide semiconductor (NLDMOS) transistor and manufacturing method thereof
12/05/2012CN102044544B Non-volatile memory with floating gates and formation method thereof
12/05/2012CN102044289B Green transistor, nano silicon ferroelectric memory and driving method thereof
12/05/2012CN101997010B Digital X-ray detection panel and manufacturing method thereof
12/05/2012CN101969070B Active element array substrate and manufacturing method thereof
12/05/2012CN101965638B Nonvolatile random access memory
12/05/2012CN101964346B Bipolar transistor, forming method of bipolar transistor and band-gap reference circuit
12/05/2012CN101937847B Manufacturing method of semiconductor device
12/05/2012CN101933148B Semiconductor element and method for manufacturing the same
12/05/2012CN101916774B Method for forming field effect transistor and semiconductor device
12/05/2012CN101887855B Asymmetric voltage discharge tube and manufacturing method thereof
12/05/2012CN101826551B Trench type semiconductor power device with low gate resistance and preparation method thereof
12/05/2012CN101819928B Method for manufacturing replacement metal gate transistors with reduced gate oxide leakage
12/05/2012CN101807597B Autoregistration submicron gate structure and manufacturing method thereof
12/05/2012CN101777514B Trench semiconductor power device and preparation method thereof
12/05/2012CN101728392B High voltage device having reduced on-state resistance
12/05/2012CN101425544B Thin film transistor, and display device having the thin film transistor
12/05/2012CN101425537B 半导体装置 Semiconductor device
12/05/2012CN101369604B 半导体装置及其制造方法 Semiconductor device and manufacturing method
12/05/2012CN101345246B Active-matrix-drive display unit including TFT
12/04/2012USRE43840 Silicon carbide semiconductor device
12/04/2012US8325553 Static memory cell having independent data holding voltage
12/04/2012US8325507 Memristors with an electrode metal reservoir for dopants
12/04/2012US8324739 Semiconductor device
12/04/2012US8324738 Self-aligned protection layer for copper post structure
12/04/2012US8324737 Modified chip attach process
12/04/2012US8324734 Tunnel junction via
12/04/2012US8324715 Semiconductor device and method of manufacturing the same
12/04/2012US8324713 Profile design for lateral-vertical bipolar junction transistor
12/04/2012US8324712 Metal capacitor and method of making the same including dielectric layer of different mechanical strength regions
12/04/2012US8324710 Capacitor, integrated device, radio frequency switching device, and electronic apparatus
12/04/2012US8324708 Semiconductor integrated circuit device and manufacturing method thereof
12/04/2012US8324705 Schottky diodes having low-voltage and high-concentration rings
12/04/2012US8324704 Silicon carbide semiconductor device with Schottky barrier diode and method of manufacturing the same
12/04/2012US8324698 High density spin-transfer torque MRAM process
12/04/2012US8324697 Seed layer and free magnetic layer for perpendicular anisotropy in a spin-torque magnetic random access memory
12/04/2012US8324696 Ultrafast magnetic recording element and nonvolatile magnetic random access memory using the magnetic recording element
12/04/2012US8324695 Electronic component with mechanically decoupled ball connections
12/04/2012US8324694 MEMS switch
12/04/2012US8324693 Semiconductor device and a method for manufacturing the same
12/04/2012US8324691 Power semiconductor device
12/04/2012US8324690 Semiconductor device with multi-functional dielectric layer
12/04/2012US8324689 Self aligned field effect transistor structure
12/04/2012US8324684 Monolithic high-current and low-current transistors sharing high voltage drain
12/04/2012US8324683 Oxide terminated trench MOSFET with three or four masks
12/04/2012US8324682 Dynamic random access memory cell and array having vertical channel transistor
12/04/2012US8324681 Stacked non-volatile memory device and methods for fabricating the same
12/04/2012US8324680 Non-volatile semiconductor storage device with laminated vertical memory cell and select transistors
12/04/2012US8324679 Nonvolatile semiconductor memory
12/04/2012US8324678 Semiconductor device and method of manufacturing the same
12/04/2012US8324677 Nonvolatile memory device and method of manufacturing the same
12/04/2012US8324676 Memory cell storage node length
12/04/2012US8324675 Flash memory device having vertical channel structure
12/04/2012US8324674 Semiconductor memory device including multi-layer gate structure
12/04/2012US8324672 Spin transport device
12/04/2012US8324671 Semiconductor device and method of manufacturing the same
12/04/2012US8324669 Process for manufacturing a MOS device with intercell ion implant confined to the gate electrode region
12/04/2012US8324668 Dummy structure for isolating devices in integrated circuits
12/04/2012US8324667 Amplifiers using gated diodes
12/04/2012US8324661 Quantum well transistors with remote counter doping
12/04/2012US8324658 ESD protection circuit for RFID tag
12/04/2012US8324657 Semiconductor device
12/04/2012US8324656 Reduction of electrostatic coupling for a thyristor-based memory cell
12/04/2012US8324654 Light emitting device and light unit having the same
12/04/2012US8324644 Optical functional element, optical functional element array, exposure device, and method of manufacturing optical functional element
12/04/2012US8324635 Multi-element LED lamp package
12/04/2012US8324631 Silicon carbide semiconductor device and method for manufacturing the same
12/04/2012US8324628 Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same
12/04/2012US8324626 Semiconductor device and method for manufacturing the same
12/04/2012US8324625 Electronic device and method for producing the same
12/04/2012US8324622 Method of repairing probe pads
12/04/2012US8324621 Semiconductor device having oxide semiconductor layer
12/04/2012US8324620 Semiconductor device having oxide semiconductor layer
12/04/2012US8324618 Light emitting device
12/04/2012US8324614 Electroluminescent devices employing organic cathodes
12/04/2012US8324612 Thin film transistor, method of fabricating the same, and flat panel display having the same
12/04/2012US8324611 Semiconductor light emitting device and wafer
12/04/2012US8324610 Semiconductor light emitting device and method for manufacturing the same
12/04/2012US8324603 Galvanic isolation that incorporates a transformer with an optical link and that can be integrated onto a single semiconductor substrate
12/04/2012US8324117 Method of forming a nanocluster-comprising dielectric layer and device comprising such a layer
12/04/2012US8324090 Method to improve dielectric quality in high-k metal gate technology
12/04/2012US8324074 Structure and method to minimize regrowth and work function shift in high-k gate stacks
12/04/2012US8324065 Resistive memory and methods of processing resistive memory
12/04/2012US8324053 High voltage MOSFET diode reverse recovery by minimizing P-body charges
12/04/2012US8324032 Method of manufacturing a semiconductor device
12/04/2012CA2466141C Nitride semiconductor device having support substrate and its manufacturing method
11/2012
11/29/2012WO2012162506A1 Junctionless semiconductor light emitting devices
11/29/2012WO2012161887A1 Encoded packet selection from a first voice stream to create a second voice stream
11/29/2012WO2012161794A1 Thin-film heterostructure thermoelectrics in a group iia and iv-vi materials system
11/29/2012WO2012161757A1 Electrode structures for arrays of nanostructures and methods thereof
11/29/2012WO2012161753A2 Magnetic tunnel junction transistor devices
11/29/2012WO2012161336A1 Thermoelectric conversion element and thermoelectric conversion method
11/29/2012WO2012161175A1 Organic thin-film transistor insulating layer material
11/29/2012WO2012161106A1 Organic thin-film transistor insulating layer material
11/29/2012WO2012160963A1 Semiconductor device
11/29/2012WO2012160962A1 Semiconductor device production method and semiconductor device
11/29/2012WO2012160937A1 Magnetic memory element and magnetic memory
11/29/2012WO2012160875A1 Switching element
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