| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/10/2013 | US20130009260 Method And System For Providing A Magnetic Junction Using Half Metallic Ferromagnets |
| 01/10/2013 | US20130009259 Magnetoresistive element and magnetic memory using the same |
| 01/10/2013 | US20130009258 Tunneling magnetoresistance sensor |
| 01/10/2013 | US20130009257 Replacement metal gate with a conductive metal oxynitride layer |
| 01/10/2013 | US20130009256 Semiconductor device |
| 01/10/2013 | US20130009255 Field effect transistor with suppressed corner leakage through channel material band-edge modulation, design structure and method |
| 01/10/2013 | US20130009248 Independently accessed double-gate and tri-gate transistors in same process flow |
| 01/10/2013 | US20130009246 Bulk finfet with uniform height and bottom isolation |
| 01/10/2013 | US20130009244 Mosfet and method for manufacturing the same |
| 01/10/2013 | US20130009243 Ldmos with enhanced safe operating area (soa) and method therefor |
| 01/10/2013 | US20130009242 Mos device with low injection diode |
| 01/10/2013 | US20130009241 Semiconductor device and method for manufacturing same |
| 01/10/2013 | US20130009240 Semiconductor device and method for manufacturing the same |
| 01/10/2013 | US20130009239 3-d non-volatile memory device and method of manufacturing the same |
| 01/10/2013 | US20130009237 Charge balance semiconductor devices with increased mobility structures |
| 01/10/2013 | US20130009236 Three-dimensional semiconductor memory devices using direct strapping line connections |
| 01/10/2013 | US20130009235 Non-volatile memory device and method of manufacturing the same |
| 01/10/2013 | US20130009233 Transistor Constructions and Processing Methods |
| 01/10/2013 | US20130009232 Non-volatile memory cell and fabricating method thereof |
| 01/10/2013 | US20130009231 Method for Efficiently Fabricating Memory Cells with Logic FETs and Related Structure |
| 01/10/2013 | US20130009228 Differential varactor device |
| 01/10/2013 | US20130009222 Transistors with immersed contacts |
| 01/10/2013 | US20130009221 Semiconductor devices including epitaxial layers and related methods |
| 01/10/2013 | US20130009220 Semiconductor device and method for manufacturing semiconductor device |
| 01/10/2013 | US20130009219 Semiconductor device and manufacturing method thereof |
| 01/10/2013 | US20130009218 Metal oxide semiconductor field transistor |
| 01/10/2013 | US20130009217 Transistor, Method for Manufacturing Transistor, and Semiconductor Chip Comprising the Transistor |
| 01/10/2013 | US20130009216 Semiconductor Device With a Dislocation Structure and Method of Forming the Same |
| 01/10/2013 | US20130009215 Vertical diode using silicon formed by selective epitaxial growth |
| 01/10/2013 | US20130009212 Transistor device |
| 01/10/2013 | US20130009211 Silicon germanium film formation method and structure |
| 01/10/2013 | US20130009210 Metal oxide semiconductor having epitaxial source drain regions and method of manufacturing same using dummy gate proces |
| 01/10/2013 | US20130009209 Semiconductor device and method for manufacturing semiconductor device |
| 01/10/2013 | US20130009208 High density thyristor random access memory device and method |
| 01/10/2013 | US20130009207 Vertical npnp structure in a triple well cmos process |
| 01/10/2013 | US20130009205 Semiconductor device |
| 01/10/2013 | US20130009182 Non-polar substrate having hetero-structure and method for manufacturing the same, and nitride-based light emitting device using the same |
| 01/10/2013 | US20130009171 Semiconductor device and method for manufacturing same |
| 01/10/2013 | US20130009170 EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURE OF EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE |
| 01/10/2013 | US20130009169 Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith |
| 01/10/2013 | US20130009168 Semiconductor module |
| 01/10/2013 | US20130009166 Semiconductor device |
| 01/10/2013 | US20130009165 Nitride semiconductor device, method for manufacturing the same and nitride semiconductor power device |
| 01/10/2013 | US20130009164 Power device and method for manufacturing the same |
| 01/10/2013 | US20130009163 Semiconductor device, active matrix substrate, and display device |
| 01/10/2013 | US20130009158 Pixel structure |
| 01/10/2013 | US20130009154 Array substrate for organic electroluminescent display device and method of fabricating the same |
| 01/10/2013 | US20130009153 Semiconductor device with buried bit line and method for fabricating the same |
| 01/10/2013 | US20130009151 Thin film transistor array substrate and method of manufacturing the same |
| 01/10/2013 | US20130009149 Semiconductor device and manufacturing method thereof |
| 01/10/2013 | US20130009148 Semiconductor device |
| 01/10/2013 | US20130009147 Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device |
| 01/10/2013 | US20130009146 Semiconductor device |
| 01/10/2013 | US20130009145 Transistor, Electronic Device Including Transistor, And Manufacturing Methods Thereof |
| 01/10/2013 | US20130009144 Top-gate transistor array substrate |
| 01/10/2013 | US20130009133 A graphene transistor with a self-aligned gate |
| 01/10/2013 | US20130009132 Low thermal conductivity material |
| 01/10/2013 | US20130009128 Nanoscale switching device |
| 01/10/2013 | US20130009125 Low resistance semiconductor device |
| 01/10/2013 | US20130009074 Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon |
| 01/10/2013 | DE202007019495U1 Substrat mit darauf aufgetragener GaN Dünnschicht und Halbleitervorrichtung auf GaN-Basis GaN substrate with an applied thin film semiconductor device and GaN-based |
| 01/10/2013 | DE112010003986T5 Abgestufte flache Grabenisolation für flächeneffiziente Körperkontakte in SOI-MOSFETS Graduated shallow grave insulation for area efficient body contacts in SOI MOSFETs |
| 01/10/2013 | DE10256985B4 Verfahren zur Herstellung eines Leistungshalbleiterbauelements Method for producing a power semiconductor component |
| 01/10/2013 | DE102012211776A1 Fertigungsverfahren eines halbleitersubstrats Manufacturing method of a semiconductor substrate |
| 01/10/2013 | DE102012211547A1 Halbleitervorrichtung Semiconductor device |
| 01/10/2013 | DE102012211544A1 Halbleitervorrichtung Semiconductor device |
| 01/10/2013 | DE102006057041B4 Halbleitervorrichtungen mit Struktur zum Erfassen von elektrischem Strom Semiconductor devices with structures for detecting electric current |
| 01/09/2013 | EP2544241A2 Insulated gate field-effect transistor having a dummy gate |
| 01/09/2013 | EP2544240A1 Semiconductor transistor |
| 01/09/2013 | EP2544237A2 Transistor and display device |
| 01/09/2013 | EP2544227A1 Non-volatile memory cell structure and method for programming and reading the same |
| 01/09/2013 | EP2544224A1 Semiconductor transistor production method |
| 01/09/2013 | EP2543072A2 Structures and methods of fabricating dual gate devices |
| 01/09/2013 | EP2543068A2 Floating body cell structures, devices including same, and methods for forming same |
| 01/09/2013 | CN202662615U 轴向二极管 Axial Diodes |
| 01/09/2013 | CN202662614U JFET (Junction Field Effect Transistor) and miniature inverter using same |
| 01/09/2013 | CN202662613U JFET (junction field effect transistor) diode with one wire pressed at each of both sides of silicon chip |
| 01/09/2013 | CN202662612U Polysilicon pillar super-junction MOSFET structure |
| 01/09/2013 | CN202662611U Ion self-alignment injection type super junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor) |
| 01/09/2013 | CN202662610U Semiconductor device with super junction structure |
| 01/09/2013 | CN202662609U Field effect transistor |
| 01/09/2013 | CN202662608U Gate structure, TFT (thin-film transistor) device and display device |
| 01/09/2013 | CN202662607U Chip with single-angle table facet |
| 01/09/2013 | CN202662606U Chip of mesa model with dual angles |
| 01/09/2013 | CN202662605U Table top-shaped chip with three angles |
| 01/09/2013 | CN102870245A Process for production of functional device, process for production of ferroelectric material layer, process for production of field effect transistor, thin film transistor, field effect transistor, and piezoelectric inkjet head |
| 01/09/2013 | CN102870222A 肖特基二极管 Schottky diodes |
| 01/09/2013 | CN102870221A Thin film transistor substrate, liquid crystal display device provided with same, and thin film transistor substrate production method |
| 01/09/2013 | CN102870220A Circuit board and display device |
| 01/09/2013 | CN102870219A Method for manufacturing semiconductor device |
| 01/09/2013 | CN102870218A Dual gate lDMOS device with reduced capacitance |
| 01/09/2013 | CN102870217A Power semiconductor device and method for manufacturing same |
| 01/09/2013 | CN102870202A Organic semiconductor film and method for manufacturing the same, and stamp for contact printing |
| 01/09/2013 | CN102870201A Method of manufacturing semiconductor device |
| 01/09/2013 | CN102870196A Epitaxial substrate and method for producing epitaxial substrate |
| 01/09/2013 | CN102870195A Epitaxial substrate and process for producing epitaxial substrate |
| 01/09/2013 | CN102869817A 碳化硅衬底 SiC substrates |
| 01/09/2013 | CN102869816A 碳化硅衬底 SiC substrates |
| 01/09/2013 | CN102868370A Low-noise amplifier with grapheme transistor |
| 01/09/2013 | CN102867857A Schottky diode with extended forward current capability |