Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
12/2012
12/26/2012CN102844875A Organic thin-film transistor
12/26/2012CN102844874A Field effect transistor, display element, image display device, and system
12/26/2012CN102844873A Semiconductor display device
12/26/2012CN102844872A 半导体装置 Semiconductor device
12/26/2012CN102844871A Semiconductor device and manufacturing method therefor
12/26/2012CN102844870A Nanowire circuits in matched devices
12/26/2012CN102844869A Electronic devices and systems, and methods for making and using same
12/26/2012CN102844868A Process for production of semiconductor device
12/26/2012CN102844867A Silicon carbide semiconductor device and method for manufacturing same
12/26/2012CN102844865A Vertical non-volatile switch with punch through access and method of fabrication therefor
12/26/2012CN102844847A Deposition method and method for manufacturing semiconductor device
12/26/2012CN102844846A Solar cell, method for producing same, and apparatus for producing solar cell
12/26/2012CN102842621A Semiconductor diode
12/26/2012CN102842620A Thin film transistor and manufacturing method thereof as well as array substrate and display device
12/26/2012CN102842619A Semiconductor device and manufacturing method thereof
12/26/2012CN102842618A Semiconductor structure and method for producing same
12/26/2012CN102842617A MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) and manufacturing method thereof
12/26/2012CN102842616A Semiconductor structure and manufacturing method thereof
12/26/2012CN102842615A Semiconductor structure and manufacturing method thereof
12/26/2012CN102842614A Semiconductor device and manufacturing method thereof
12/26/2012CN102842613A Double-heterostructure GaN-based high-electron mobility transistor structure and preparation method
12/26/2012CN102842612A Insulated-gate bipolar transistor with embedded island structure
12/26/2012CN102842611A Five-mask insulated gate bipolar transistor (IGBT) chip and manufacturing method thereof
12/26/2012CN102842610A Insulated gate bipolar translator (IGBT) chip and method for producing same
12/26/2012CN102842609A Terminal extension structure and manufacturing method thereof
12/26/2012CN102842608A 绝缘栅双极晶体管及制作方法 Insulated gate bipolar transistor and a method of manufacturing
12/26/2012CN102842607A Germanium-silicon triode base region hard mask membrane layer structure and manufacturing method thereof
12/26/2012CN102842606A Variable grid internal resistance for IGBT (Insulated Gate Bipolar Transistor) chip and design method thereof
12/26/2012CN102842605A Bipolar junction transistor
12/26/2012CN102842604A Trench gate type insulating gate bipolar transistor and manufacturing method thereof
12/26/2012CN102842603A Metal-oxide-semiconductor field effect transistor (MOSFET) and method for producing same
12/26/2012CN102842602A Amorphous zinc magnesium oxide/carbon nano tube composite thin film transistor and preparation method thereof
12/26/2012CN102842601A Array substrate and manufacture method thereof
12/26/2012CN102842600A Silicon-on-insulator silicon germanium heterojunction bipolar transistor (SOI SiGe HBT) planar integrated device and preparation method thereof
12/26/2012CN102842599A SiC schottky diode and manufacturing method thereof
12/26/2012CN102842598A Improved sawtooth electric field drift region structure for power semiconductor device
12/26/2012CN102842597A 半导体芯片和半导体器件 Semiconductor chips and semiconductor devices
12/26/2012CN102842596A 半导体结构及其制造方法 The semiconductor structure and a method of manufacturing
12/26/2012CN102842595A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/26/2012CN102842585A Semiconductor device and method for manufacturing the same
12/26/2012CN102842581A 记忆体结构及其制造方法 Memory structure and its manufacturing method
12/26/2012CN102842579A Low-leakage low-voltage diode chip and preparation method of chip
12/26/2012CN102842578A Bipolar high electron mobility transistor and methods of forming same
12/26/2012CN102842576A Semiconductor device
12/26/2012CN102842533A Organic light-emitting display device and method of manufacturing the same
12/26/2012CN102842509A Thin film transistor and method of manufacturing the same, organic light-emitting display apparatus and method of manufacturing the same
12/26/2012CN102842504A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
12/26/2012CN102842503A Manufacturing method of semiconductor device and semiconductor device
12/26/2012CN102842502A 绝缘栅双极晶体管及其制作方法 Insulated gate bipolar transistor and manufacturing method thereof
12/26/2012CN102842493A Semiconductor structure and manufacturing method thereof
12/26/2012CN102237400B Electrostatic discharge protective device
12/26/2012CN102035533B 半导体器件 Semiconductor devices
12/26/2012CN101952947B Self-assembled sidewall spacer
12/26/2012CN101946331B Semiconductor device manufacturing method
12/26/2012CN101944345B Semiconductor integrated circuit device for driving liquid crystal display
12/26/2012CN101933150B Thin film transistor using an oxide semiconductor and display
12/26/2012CN101904011B 薄膜半导体装置和场效应晶体管 A thin film semiconductor device and a field-effect transistor
12/26/2012CN101901836B 半导体器件 Semiconductor devices
12/26/2012CN101809747B Thin film transistor, manufacturing method therefor, and display apparatus using the same
12/26/2012CN101689600B Magnetoresistive element and magnetic random access memory
12/26/2012CN101645460B Semiconductor device having a spacer layer doped with slower diffusing atoms than substrate
12/26/2012CN101566510B Pressure sensor, manufacturing method thereof, and electronic component provided therewith
12/26/2012CN101499322B CCD device and method of driving same
12/26/2012CN101471231B Method of forming a micro pattern of a semiconductor device
12/26/2012CN101057339B 无定形氧化物和场效应晶体管 Amorphous oxide, and field-effect transistors
12/25/2012US8340145 Microwave circuit
12/25/2012US8339862 Nonvolatile semiconductor memory device
12/25/2012US8339841 Magnetoresistive element including upper electrode having hexagonal cross-section shape and method of manufacturing the same
12/25/2012US8339562 Electro-optical device and method for manufacturing the same
12/25/2012US8339559 Liquid crystal display unit structure including a patterned etch stop layer above a first data line segment
12/25/2012US8339558 Liquid crystal electro-optic device
12/25/2012US8339492 Image sensor inhibiting electrical shorts in a contract plug penetrating an image sensing device and method for manufacturing the same
12/25/2012US8339304 Remote control signal generation device and remote control system
12/25/2012US8339204 Semiconductor device
12/25/2012US8339038 Light-emitting device
12/25/2012US8338968 Semiconductor device and a method of manufacturing the same
12/25/2012US8338967 Stress buffering package for a semiconductor component
12/25/2012US8338958 Semiconductor device and manufacturing method thereof
12/25/2012US8338954 Semiconductor apparatus and fabrication method thereof
12/25/2012US8338953 Method of manufacturing a semiconductor device and semiconductor device
12/25/2012US8338952 Interconnect structures with ternary patterned features generated from two lithographic processes
12/25/2012US8338951 Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same
12/25/2012US8338946 Semiconductor module, method of manufacturing semiconductor module, and mobile device
12/25/2012US8338919 Semiconductor device with strain
12/25/2012US8338916 Thermal oxidation of single crystal aluminum antimonide and materials having the same
12/25/2012US8338914 Integrated process for thin film resistors with silicides
12/25/2012US8338913 Semiconductor inductor with a serpentine shaped conductive wire interlaced with a serpentine shaped ferromagnetic core
12/25/2012US8338907 Semiconductor device and method of manufacturing the same
12/25/2012US8338906 Schottky device
12/25/2012US8338903 Photoelectric transducer and manufacturing method therefor
12/25/2012US8338899 Pressure sensor and manufacturing method thereof
12/25/2012US8338898 Micro electro mechanical system (MEMS) microphone having a thin-film construction
12/25/2012US8338896 MEMS sensor, MEMS sensor manufacturing method, and electronic device
12/25/2012US8338893 Method and resulting structure DRAM cell with selected inverse narrow width effect
12/25/2012US8338892 Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by corner rounding at the top of the gate electrode
12/25/2012US8338891 Arrangement of MOSFET's for controlling same
12/25/2012US8338888 Process for manufacturing an integrated device with “damascene” field insulation, and integrated device made by such process
12/25/2012US8338887 Buried gate transistor
12/25/2012US8338886 Semiconductor device with (110)-oriented silicon
12/25/2012US8338883 Semiconductor device
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