Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
11/2012
11/29/2012WO2012160868A1 Semiconductor device
11/29/2012WO2012160845A1 Mems sensor
11/29/2012WO2012160844A1 Load sensing device, electronic equipment using load sensing device, and method for manufacturing load sensing device
11/29/2012WO2012160800A1 Method of manufacturing semiconductor device
11/29/2012WO2012160757A1 Schottky diode
11/29/2012WO2012160663A1 Spin filter and driving method thereof
11/29/2012WO2012160632A1 Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
11/29/2012WO2012160631A1 Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
11/29/2012WO2012160624A1 Method for forming insulating film
11/29/2012WO2012159329A1 Method for manufacturing surround-gate silicon nanowire transistor with air as sidewall
11/29/2012WO2012159235A1 Semiconductor device and method for fabricating the same
11/29/2012WO2012102559A3 Semiconductor device using graphene, semiconductor device using carbon nano-material, semiconductor device array using graphene, and method for fabricating same
11/29/2012US20120302178 Regrown shottky structures for gan hemt devices
11/29/2012US20120302033 Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same
11/29/2012US20120302032 Methods for Forming Strained Channel Dynamic Random Access Memory Devices
11/29/2012US20120301953 Graphene nanomesh and method of making the same
11/29/2012US20120301785 Process for fabricating nanowire arrays
11/29/2012US20120300546 Apparatus and methods including a bipolar junction transistor coupled to a string of memory cells
11/29/2012US20120300540 Transient heat assisted sttram cell for lower programming current
11/29/2012US20120300533 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
11/29/2012US20120300168 Optically transparent conductors
11/29/2012US20120299635 Magnetic tunnel junction transistor devices
11/29/2012US20120299546 Under voltage tolerant clamp
11/29/2012US20120299471 Electro-optical device and electronic device
11/29/2012US20120299185 Slit Recess Channel Gate and Method of Forming the Same
11/29/2012US20120299164 Pin diode
11/29/2012US20120299163 Pin diode
11/29/2012US20120299158 Cmp polishing liquid, method for polishing substrate, and electronic component
11/29/2012US20120299157 Semiconductor process and fabricated structure thereof
11/29/2012US20120299156 Wafer processing method
11/29/2012US20120299155 Method for forming fully relaxed silicon germanium on silicon
11/29/2012US20120299154 Manufacturing method for semiconductor debice
11/29/2012US20120299152 Dual contact trench resistor and capacitor in shallow trench isolation (sti) and methods of manufacture
11/29/2012US20120299151 Semiconductor Device and Method of Forming RF Balun having Reduced Capacitive Coupling and High CMRR
11/29/2012US20120299148 Integrated Circuit and Method of Forming Sealed Trench Junction Termination
11/29/2012US20120299146 Vertical esd protection device
11/29/2012US20120299137 Seed layer and free magnetic layer for perpindicular anisotropy in a spin-torque magnetic random access memory
11/29/2012US20120299136 Pillar-based interconnects for magnetoresistive random access memory
11/29/2012US20120299135 Non volatile memory including stabilizing structures
11/29/2012US20120299134 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications
11/29/2012US20120299133 Magnetic devices and methods of fabricating the same
11/29/2012US20120299132 Tunneling magnetoresistance (tmr) read sensor with low-contact-resistance interfaces
11/29/2012US20120299131 Arrangement with a mems device and method of manufacturing
11/29/2012US20120299130 Accelerometer and production method
11/29/2012US20120299129 Process and Structure for High Temperature Selective Fusion Bonding
11/29/2012US20120299128 Method of bonding semiconductor substrate and mems device
11/29/2012US20120299125 Self-aligned contacts
11/29/2012US20120299124 Gate structure and a method for forming the same
11/29/2012US20120299123 Gate-Last Fabrication of Quarter-Gap MGHK FET
11/29/2012US20120299122 High-k/metal gate transistor with l-shaped gate encapsulation layer
11/29/2012US20120299121 Source/Drain Formation and Structure
11/29/2012US20120299120 RF Circuits Including Transistors Having Strained Material Layers
11/29/2012US20120299111 Electronic devices and systems, and methods for making and using the same
11/29/2012US20120299104 Schottky fet fabricated with gate last process
11/29/2012US20120299103 Raised source/drain structure for enhanced strain coupling from stress liner
11/29/2012US20120299102 FET with FUSI Gate and Reduced Source/Drain Contact Resistance
11/29/2012US20120299101 Thin body silicon-on-insulator transistor with borderless self-aligned contacts
11/29/2012US20120299100 Semiconductor device and method of manufacturing the same
11/29/2012US20120299099 Finfet transistor structure and method for making the same
11/29/2012US20120299098 Fin-like field effect transistor (finfet) non-volatile random access memory (nvram) device with bottom erase gate
11/29/2012US20120299097 Semiconductor Architecture Having Field-effect Transistors Especially Suitable for Analog Applications
11/29/2012US20120299096 High voltage and ultra-high voltage semiconductor devices with increased breakdown voltages
11/29/2012US20120299095 Semiconductor device
11/29/2012US20120299094 Semiconductor device having a super junction structure and method of manufacturing the same
11/29/2012US20120299093 Semiconductor device
11/29/2012US20120299091 Trenched power semiconductor device and fabrication method thereof
11/29/2012US20120299090 Semiconductor Devices Including Dual Gate Electrode Structures And Related Methods
11/29/2012US20120299089 Semiconductor Device and Method for Manufacturing the same
11/29/2012US20120299088 Memory Arrays, Semiconductor Constructions, and Methods of Forming Semiconductor Constructions
11/29/2012US20120299087 Non-volatile memory device and method for fabricating the same
11/29/2012US20120299086 Semiconductor memory devices
11/29/2012US20120299085 Select transistor, method for making select transistor, memory device, and method for manufacturing memory device
11/29/2012US20120299084 Semiconductor device and method of manufacturing the same
11/29/2012US20120299083 Nonvolatile semiconductor memory device and method of fabricating the same
11/29/2012US20120299082 Non-volatile memory device and method for fabricating the same
11/29/2012US20120299081 Nonvolatile memory device and method for fabricating the same
11/29/2012US20120299079 Field side sub-bitline nor flash array and method of fabricating the same
11/29/2012US20120299078 Semiconductor storage device and manufacturing method thereof
11/29/2012US20120299077 Semiconductor device and method of manufacturing the same
11/29/2012US20120299076 Nonvolatile memory device and method for fabricating the same
11/29/2012US20120299073 Semiconductor device and method of forming the same
11/29/2012US20120299069 Copper-filled trench contact for transistor performance improvement
11/29/2012US20120299068 Semiconductor device and method of producing the same
11/29/2012US20120299067 Cmos with channel p-finfet and channel n-finfet having different crystalline orientations and parallel fins
11/29/2012US20120299062 Embedded silicon germanium n-type filed effect transistor for reduced floating body effect
11/29/2012US20120299061 Method for manufacturing epitaxial crystal substrate, epitaxial crystal substrate and semiconductor device
11/29/2012US20120299060 Nitride semiconductor device and manufacturing method thereof
11/29/2012US20120299059 Transistor and method for manufacturing same
11/29/2012US20120299058 Semiconductor device and method for fabricating the same
11/29/2012US20120299057 Semiconductor device
11/29/2012US20120299056 Method of manufacturing semiconductor device and semiconductor device
11/29/2012US20120299055 Semiconductor device and method of manufacturing semiconductor device
11/29/2012US20120299054 Power semiconductor device
11/29/2012US20120299053 Semiconductor Device and Integrated Circuit Including the Semiconductor Device
11/29/2012US20120299035 Light-emitting device and display device
11/29/2012US20120299015 Nitride semiconductor device and nitride semiconductor layer growth substrate
11/29/2012US20120299014 Semiconductor light emitting device, nitride semiconductor layer growth substrate, and nitride semiconductor wafer
11/29/2012US20120299012 Gallium Nitride for Liquid Crystal Electrodes
11/29/2012US20120299011 Field-effect transistor and method for fabricating the same
11/29/2012US20120299009 Method of Manufacturing Thin Film Transistor
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