| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/17/2013 | US20130015500 Semiconductor device |
| 01/17/2013 | US20130015499 Composite Semiconductor Device with a SOI Substrate Having an Integrated Diode |
| 01/17/2013 | US20130015498 Composite Semiconductor Device with Integrated Diode |
| 01/17/2013 | US20130015495 Stacked Half-Bridge Power Module |
| 01/17/2013 | US20130015494 Nanotube Semiconductor Devices and Nanotube Termination Structures |
| 01/17/2013 | US20130015493 Semiconductor apparatus and method for manufacturing semiconductor apparatus |
| 01/17/2013 | US20130015492 Opto-electronic and electronic devices using an n-face or m-plane gallium nitride substrate prepared via ammonothermal growth |
| 01/17/2013 | US20130015469 Method for manufacturing diode, and diode |
| 01/17/2013 | US20130015468 Semiconductor device and method of manufacturing the same |
| 01/17/2013 | US20130015467 System and Method for Wafer Level Packaging |
| 01/17/2013 | US20130015466 Epitaxial substrate for semiconductor device and semiconductor device |
| 01/17/2013 | US20130015464 Power semiconductor device |
| 01/17/2013 | US20130015463 Nitride-based semiconductor device having excellent stability |
| 01/17/2013 | US20130015462 Transistors with dual layer passivation |
| 01/17/2013 | US20130015460 Semiconductor structure and method of forming the same |
| 01/17/2013 | US20130015459 Thin film transistor array substrate, organic light-emitting display device including the same, and method of manufacturing the organic light-emitting display device |
| 01/17/2013 | US20130015457 Organic light emitting display device and method of manufacturing the same |
| 01/17/2013 | US20130015455 Germanium-containing release layer for transfer of a silicon layer to a substrate |
| 01/17/2013 | US20130015454 Panel structure, display device including same, and methods of manufacturing panel structure and display device |
| 01/17/2013 | US20130015453 Display device, thin-film transistor used for display device, and method of manufacturing thin-film transistor |
| 01/17/2013 | US20130015451 Thin film transistor matrix device and method for fabricating the same |
| 01/17/2013 | US20130015443 Semiconductor device and manufacturing method thereof |
| 01/17/2013 | US20130015442 Bonded semiconductor structures and method of forming same |
| 01/17/2013 | US20130015441 Ic card and booking-account system using the ic card |
| 01/17/2013 | US20130015438 Semiconductor device and manufacturing method thereof |
| 01/17/2013 | US20130015437 Semiconductor device |
| 01/17/2013 | US20130015436 Semiconductor device |
| 01/17/2013 | US20130015429 All graphene flash memory device |
| 01/17/2013 | DE112010005272T5 Pin-diode PIN diode |
| 01/17/2013 | DE112010000738T5 Halbleitervorrichtu ng Halbleitervorrichtu ng |
| 01/17/2013 | DE112008000638B4 Verfahren zur Herstellung einer Halbleitereinheit mit selbstausgerichteten epitaxialen Verlängerungen von Quellen und Senken A method for manufacturing a semiconductor device with self-aligned epitaxial extensions of sources and sinks |
| 01/17/2013 | DE10300594B4 Bauelement und Verfahren Device and method |
| 01/17/2013 | DE102012212119A1 Leistungshalbleitervorrichtung Power semiconductor device |
| 01/17/2013 | DE102012211374A1 Halbleitergerät und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 01/17/2013 | DE102011107649A1 Micromechanical sensor for, e.g. analyzing topographies in grid force microscopy, has unilateral bendable cantilever in which gate electrode of FET is inserted, and is spaced at free space from semiconductor substrate |
| 01/17/2013 | DE102011051767A1 Integrated non-volatile memory device i.e. ferroelectric RAM, for use in computer, has non-volatile space-charge zone formed in top and bottom contact terminal portions in ferroelectric layer by voltage applied between contacts |
| 01/17/2013 | DE102011004323A1 Halbleiterbauelement mit selbstjustierten Kontaktelementen Semiconductor device with self-aligned contact elements |
| 01/17/2013 | DE102006047489B9 Halbleiterbauelement Semiconductor device |
| 01/16/2013 | EP2546987A2 Nested Composite Switch |
| 01/16/2013 | EP2546986A2 Nested Composite Diode |
| 01/16/2013 | EP2546884A1 Semiconductor device and method for manufacturing the same |
| 01/16/2013 | EP2546883A2 Composite Semiconductor Device with a SOI Substrate Having an Integrated Diode |
| 01/16/2013 | EP2546882A1 Semiconductor device |
| 01/16/2013 | EP2546881A2 Method of manufacturing power device |
| 01/16/2013 | EP2546880A2 Composite semiconductor device with integrated diode |
| 01/16/2013 | EP2546879A2 Power semiconductor device |
| 01/16/2013 | EP2546867A1 Silicon carbide semiconductor device, and process for production thereof |
| 01/16/2013 | EP2546865A2 Methods of processing semiconductor wafers having silicon carbide power devices thereon |
| 01/16/2013 | EP2545587A1 Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| 01/16/2013 | EP2545586A1 Graphene based three-dimensional integrated circuit device |
| 01/16/2013 | EP2545585A2 Porous and non-porous nanostructures |
| 01/16/2013 | CN202678318U High junction temperature high power diode |
| 01/16/2013 | CN202678317U Conducting structure, film transistor, array substrate and display apparatus |
| 01/16/2013 | CN202678316U Axial diode electrode leading wire with diversion trenches |
| 01/16/2013 | CN202678306U Minitype packaging thyristor module |
| 01/16/2013 | CN1870293B Semiconductor device and method for fabricating the same |
| 01/16/2013 | CN1783501B Plane display |
| 01/16/2013 | CN1652350B Thin film transistor and method of manufacturing the same |
| 01/16/2013 | CN102884634A Semiconductor device, active matrix substrate, and display device |
| 01/16/2013 | CN102884633A Circuit board and display device |
| 01/16/2013 | CN102884632A Thin film transistor, contact structure, substrate, display device, and processes for producing same |
| 01/16/2013 | CN102884631A Trench DMOS device with improved termination structure for high voltage applications |
| 01/16/2013 | CN102884630A Electronic devices and systems,and methods for making and using the same |
| 01/16/2013 | CN102884626A Semiconductor device and semiconductor relay using same |
| 01/16/2013 | CN102884625A 半导体装置 Semiconductor device |
| 01/16/2013 | CN102884614A Method for producing thin film transistor device, thin film transistor device, and display device |
| 01/16/2013 | CN102884068A Thienopyridine derivative, method for producing same and organic semiconductor device using same |
| 01/16/2013 | CN102881726A Power semiconductor device |
| 01/16/2013 | CN102881725A Metal oxide semiconductor (MOS) tube, manufacture method thereof and application of MOS tube in battery protection circuit |
| 01/16/2013 | CN102881724A Multi-grid transistor and manufacturing method thereof |
| 01/16/2013 | CN102881723A Semiconductor device structure and fabrication method of semiconductor device structure |
| 01/16/2013 | CN102881722A Source-field-plate heterojunction field-effect transistor and manufacturing method thereof |
| 01/16/2013 | CN102881721A Mixed-structure field effect transistor and manufacturing method thereof |
| 01/16/2013 | CN102881720A Taiwan semiconductor mfg |
| 01/16/2013 | CN102881719A Junction barrier schottky diode with enforced upper contact structure and method for robust packaging |
| 01/16/2013 | CN102881718A Nitride-based semiconductor device having excellent stability |
| 01/16/2013 | CN102881717A Protection ring structure of high-voltage device and manufacturing method of protection ring structure |
| 01/16/2013 | CN102881716A Field-induced tunneling enhanced HEMT (high electron mobility transistor) device |
| 01/16/2013 | CN102881715A High-frequency and low-noise gallium nitride transistor structure with high electronic mobility |
| 01/16/2013 | CN102881714A Power device and method for manufacturing same |
| 01/16/2013 | CN102881694A Semiconductor device and manufacturing method therefor |
| 01/16/2013 | CN102881693A Storage device and manufacturing method thereof |
| 01/16/2013 | CN102881689A Array substrate and manufacturing method thereof and LCD panel |
| 01/16/2013 | CN102881688A Array substrate, display panel and array substrate manufacturing method |
| 01/16/2013 | CN102881679A IGBT (insulated gate bipolar transistor) chip integrating temperature and current sensing function |
| 01/16/2013 | CN102881656A Semiconductor device and fabrication method thereof |
| 01/16/2013 | CN102881654A Thin-film transistor array substrate and preparation method thereof and active matrix display device |
| 01/16/2013 | CN102881653A Thin film transistor and manufacturing method thereof |
| 01/16/2013 | CN102881590A Forming method for repair layer and metal oxide semiconductor transistor structure |
| 01/16/2013 | CN102881589A Crimping IGBT (insulated gate bipolar transistor) module and method for manufacturing same |
| 01/16/2013 | CN102881580A Method for manufacturing a semiconductor device |
| 01/16/2013 | CN102881579A Method for improving data retention through corner rounding floating gate and MOS (Metal Oxide Semiconductor) transistor |
| 01/16/2013 | CN102881576A Self-aligned source and drain structures and method of manufacturing same |
| 01/16/2013 | CN102881573A Transistor and semiconductor device, and production methods of transistor and semiconductor device |
| 01/16/2013 | CN102881568A PN junction and method for preparing same |
| 01/16/2013 | CN102881249A Pixel unit and active matrix flat panel display device |
| 01/16/2013 | CN102184919B 半导体集成电路 The semiconductor integrated circuit |
| 01/16/2013 | CN102169881B Power supply clamping structure method applied to high pressure process integrated circuit |
| 01/16/2013 | CN102097469B Semiconductor structure and manufacture method thereof |
| 01/16/2013 | CN102074580B Transistor structure with reinforced total dose radiation resistance |