| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/31/2013 | US20130026485 Power semiconductor device |
| 01/31/2013 | US20130026482 Boron-Containing Buffer Layer for Growing Gallium Nitride on Silicon |
| 01/31/2013 | US20130026480 Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow |
| 01/31/2013 | US20130026479 Semiconductor thin-film forming method, semiconductor device, semiconductor device manufacturing method, substrate, and thin-film substrate |
| 01/31/2013 | US20130026472 Tft structure and pixel structure |
| 01/31/2013 | US20130026471 Circuit Structures, Memory Circuitry, And Methods |
| 01/31/2013 | US20130026470 Wiring structure, display apparatus, and semiconductor device |
| 01/31/2013 | US20130026469 Silicon wafers and ingots with reduced oxygen content and methods for producing them |
| 01/31/2013 | US20130026466 Testing architecture of circuits integrated on a wafer |
| 01/31/2013 | US20130026465 Semiconductor device including an asymmetric feature, and method of making the same |
| 01/31/2013 | US20130026462 Method for manufacturing thin film transistor and thin film transistor manufactured by the same, and active matrix substrate |
| 01/31/2013 | US20130026451 Hybrid CMOS Technology With Nanowire Devices and Double Gated Planar Devices |
| 01/31/2013 | US20130026450 Nitride-based heterojuction semiconductor device and method for the same |
| 01/31/2013 | US20130026449 Hybrid CMOS Technology with Nanowire Devices and Double Gated Planar Devices |
| 01/31/2013 | US20130026445 Quantum dot optoelectronic device and methods therefor |
| 01/31/2013 | US20130026444 Synthesizing graphene from metal-carbon solutions using ion implantation |
| 01/31/2013 | US20130026443 Silicon nanowire comprising high density metal nanoclusters and method of preparing the same |
| 01/31/2013 | US20130026439 Semiconductor device and method of fabricating the same |
| 01/31/2013 | US20130025670 Semiconductor substrate and method for producing the same, photovoltaic cell element, and photovoltaic cell |
| 01/31/2013 | DE112011101395T5 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device |
| 01/31/2013 | DE10346608B4 Herstellverfahren für ein Halbleiterbauteil Manufacturing method of a semiconductor device |
| 01/31/2013 | DE102012213099A1 Vertikaler transistor mit verbesserter robustheit Vertical transistor with improved robustness |
| 01/31/2013 | DE102012212515A1 Semiconductor device for switching of high current, has guard ring that is located on semiconductor substrate so as to surround semiconductor element, and channel stopper which is extended along inside wall of recess |
| 01/31/2013 | DE102012207311A1 Siliziumcarbid-Halbleitervorrichtung Silicon carbide semiconductor device |
| 01/31/2013 | DE102011113767B3 Semiconductor radiation detector for semiconductor substrate, has electrode assembly provided with barrier gate that is electrically actuated by pump-gate to control transfer of charge carrier from charge carrier reservoir to substrate |
| 01/31/2013 | DE102011108651A1 Hochvolttransistorbauelement und Herstellungsverfahren High-voltage transistor device and manufacturing method |
| 01/31/2013 | DE102011108334A1 Electronic device has bipolar transistor whose base is provided with high concentration dopant regions disconnected by region having dopant with lower concentration |
| 01/31/2013 | DE102011080438B3 Herstellverfahren für einen N-Kanaltransistor mit einer Metallgateelektrodenstruktur mit großem ε und einem reduzierten Reihenwiderstand durch epitaktisch hergestelltes Halbleitermaterial in den Drain- und Sourcebereichen und N-Kanaltransistor Manufacturing process for an N-channel transistor with a metal gate electrode structure with large ε and a reduced series resistance by epitaxially produced semiconductor material in the drain and source regions and N-channel transistor |
| 01/31/2013 | DE102011079833A1 Method for manufacturing integrated circuit for e.g. P-channel complementary MOS transistor, involves producing recess in active region by etching process, and forming semiconductor alloy by performing epitaxial growth process |
| 01/31/2013 | DE102008001535B4 Bipolartransistor und Verfahren zur Herstellung desselben Bipolar transistor and method of manufacturing the same |
| 01/31/2013 | DE102004022455B4 Bipolartransistor mit isolierter Steuerelektrode Bipolar transistor with insulated gate electrode |
| 01/31/2013 | DE102004013583B4 Sensor für eine physikalische Grösse mit einem Balken Sensor for a physical quantity with a bar |
| 01/30/2013 | EP2551913A1 Heat-type sensor and platform |
| 01/30/2013 | EP2551912A2 A silicon-carbide mosfet cell structure and method for forming same |
| 01/30/2013 | EP2551911A2 Power semiconductor device |
| 01/30/2013 | EP2551910A1 Insulated gate semiconductor device with optimized breakdown voltage and manufacturing method thereof |
| 01/30/2013 | EP2551900A1 Semiconductor device |
| 01/30/2013 | EP2551891A1 Semiconductor device and method for producing same |
| 01/30/2013 | EP2550677A1 Power semiconductor device |
| 01/30/2013 | EP2550675A1 Method for providing a metal electrode on the surface of a hydrophobic material |
| 01/30/2013 | CN202712193U Thin-film transistor, array substrate and display apparatus |
| 01/30/2013 | CN202712192U Fast recovery diode chip |
| 01/30/2013 | CN202712189U Nonvolatile memory body compatible with CMOS logic technology |
| 01/30/2013 | CN202712188U Nonvolatile memory body with P+ floating-gate electrodes |
| 01/30/2013 | CN202712187U Non-volatile memory for improving data storage time |
| 01/30/2013 | CN102906882A Semiconductor device and method of manufacturing the same |
| 01/30/2013 | CN102906881A 半导体装置 Semiconductor device |
| 01/30/2013 | CN102906880A Delta monolayer dopants epitaxy for embedded source/drain silicide |
| 01/30/2013 | CN102906879A Fabrication of a vertical heterojunction tunnel-FET |
| 01/30/2013 | CN102906862A Native devices having improved device characteristics and methods for fabrication |
| 01/30/2013 | CN102906804A Thin film transistor substrate and method for producing same |
| 01/30/2013 | CN102906636A 液晶显示装置 The liquid crystal display device |
| 01/30/2013 | CN102906574A 加速度传感器 Acceleration sensor |
| 01/30/2013 | CN102906026A Titanium oxide particles, process for producing same, magnetic memory, optical information recording medium, and charge accumulation type memory |
| 01/30/2013 | CN102903762A Schottky diode and preparation method thereof |
| 01/30/2013 | CN102903761A 太赫兹肖特基二极管 Too 赫兹肖特基 diode |
| 01/30/2013 | CN102903760A Semiconductor device |
| 01/30/2013 | CN102903759A Manufacturing method for thin film transistor and display device |
| 01/30/2013 | CN102903758A Method for manufacturing semiconductor device |
| 01/30/2013 | CN102903757A Method for forming SOI MOSFET (Silicon On Insulator Metal-Oxide-Semiconductor Field Effect Transistor) body contact by using side wall process |
| 01/30/2013 | CN102903756A Field effect transistor with diamond metal-insulator-semiconductor structure and preparation method thereof |
| 01/30/2013 | CN102903755A Power semiconductor device |
| 01/30/2013 | CN102903754A Vertical transistor with improved robustness |
| 01/30/2013 | CN102903753A Semiconductor devices including variable resistance material and methods of fabricating the same |
| 01/30/2013 | CN102903752A High-voltage element and manufacturing method thereof |
| 01/30/2013 | CN102903751A Semiconductor element and manufacture method thereof |
| 01/30/2013 | CN102903750A Semiconductor field effect transistor structure and production method thereof |
| 01/30/2013 | CN102903749A Semiconductor device structure and production method thereof |
| 01/30/2013 | CN102903748A Lateral double-diffused metal oxide semiconductor (DMOS) and manufacturing method thereof |
| 01/30/2013 | CN102903747A All-single-walled carbon nanotube field effect transistor and preparation method thereof |
| 01/30/2013 | CN102903746A High-current-density lateral ultra-thin insulated gate bipolar transistor |
| 01/30/2013 | CN102903745A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/30/2013 | CN102903744A Semiconductor structure and its forming method |
| 01/30/2013 | CN102903743A Power semiconductor device structure adopting metal silicide and manufacturing method of power semiconductor device structure |
| 01/30/2013 | CN102903742A Metal gate electrode of a field effect transistor |
| 01/30/2013 | CN102903741A Semiconductor device and method of manufacturing the same |
| 01/30/2013 | CN102903740A 沟槽结构半导体装置 Trench structure of a semiconductor device |
| 01/30/2013 | CN102903739A Semiconductor structure with rare earth oxide |
| 01/30/2013 | CN102903738A III-series nitride semiconductor device and manufacturing method thereof |
| 01/30/2013 | CN102903737A Semiconductor device and manufacturing method of semiconductor device |
| 01/30/2013 | CN102903736A 二极管及其制作方法 Diode and manufacturing method thereof |
| 01/30/2013 | CN102903702A 碳化硅半导体装置 The silicon carbide semiconductor device |
| 01/30/2013 | CN102903694A Power semiconductor chip having two metal layers on one face |
| 01/30/2013 | CN102903663A Semiconductor devices having encapsulated isolation regions and related fabrication methods |
| 01/30/2013 | CN102903639A MOS (Metal Oxide Semiconductor) transistor, substrate provided with stress layers and formation method of substrate provided with stress layer |
| 01/30/2013 | CN102903638A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/30/2013 | CN102315274B Hyperconjugation terminal structure of longitudinal double-diffused metal-oxide field effect transistor |
| 01/30/2013 | CN102280487B Power MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) device of novel groove structure and manufacture method thereof |
| 01/30/2013 | CN102254940B Low-capacitance transistor power device and manufacturing method thereof |
| 01/30/2013 | CN102208451B Metal insulated gate field effect transistor structure for high-voltage integrated circuit and preparation method thereof |
| 01/30/2013 | CN102201448B High-voltage PMOS (P-channel metal oxide semiconductor) dual-trench isolated SOI (silicon on insulator) chip |
| 01/30/2013 | CN102148251B Semiconductor on insulator (SOI) lateral metal-oxide-semiconductor field-effect-transistor (MOSFET) device and integrated circuit |
| 01/30/2013 | CN102142461B Grid controlled Schottky junction tunneling field effect transistor and forming method thereof |
| 01/30/2013 | CN102088036B 集成电路结构 Integrated circuit structure |
| 01/30/2013 | CN102074572B 集成电路结构 Integrated circuit structure |
| 01/30/2013 | CN101924129B Field effect transistor |
| 01/30/2013 | CN101894868B Gallium nitride semiconductor device with improved forward conduction |
| 01/30/2013 | CN101840938B Gallium nitride heterojunction schottky diode |
| 01/30/2013 | CN101771053B Nonvolatile memory device and method of fabricating the same |
| 01/30/2013 | CN101743626B Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon |