| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/23/2013 | CN202695434U Series module of thyristors |
| 01/23/2013 | CN202695430U 封装晶闸管模块 Package thyristor module |
| 01/23/2013 | CN202685441U Conductive electrode, thin film transistor, display device and semiconductor photoelectric device |
| 01/23/2013 | CN1914722B Method for fabricating strained silicon-on-insulator structures and strained silicon-on-insulator structures formed thereby |
| 01/23/2013 | CN102893403A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/23/2013 | CN102893402A 功率半导体装置 Power semiconductor device |
| 01/23/2013 | CN102893398A Integrated circuit, electronic device and ESD protection therefor |
| 01/23/2013 | CN102893387A Graphene channel-based devices and methods for fabrication thereof |
| 01/23/2013 | CN102893382A Memory device comprising junctionless thin- film transistor |
| 01/23/2013 | CN102893381A Graphene/nanostructure fet with self-aligned contact and gate |
| 01/23/2013 | CN102893380A Asymmetric epitaxy and application thereof |
| 01/23/2013 | CN102893375A High-k metal gate stack |
| 01/23/2013 | CN102893315A 有源矩阵基板和显示面板 Active matrix substrate and a display panel |
| 01/23/2013 | CN102891186A Protection diode and semiconductor device having the same |
| 01/23/2013 | CN102891185A 半导体结构及其制造方法 Semiconductor structure and manufacturing method |
| 01/23/2013 | CN102891184A Nonvolatile memory and manufacturing method thereof |
| 01/23/2013 | CN102891183A 薄膜晶体管及主动矩阵式平面显示装置 Active matrix thin film transistor and flat display device |
| 01/23/2013 | CN102891182A Semiconductor device |
| 01/23/2013 | CN102891181A Transistor and display device |
| 01/23/2013 | CN102891180A Semiconductor device comprising MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device and methods of manufacturing MOSFET device |
| 01/23/2013 | CN102891179A Semiconductor device and manufacturing method thereof |
| 01/23/2013 | CN102891178A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/23/2013 | CN102891177A Semiconductor device and manufacturing method of semiconductor device |
| 01/23/2013 | CN102891176A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/23/2013 | CN102891175A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 01/23/2013 | CN102891174A Epitaxial wafer including nitride-based semiconductor layers |
| 01/23/2013 | CN102891173A Trap cut plane terminal structure suitable for GCT (gate commutation transistor) device and preparation method thereof |
| 01/23/2013 | CN102891172A Semiconductor device and electric power conversion system using the same |
| 01/23/2013 | CN102891171A 氮化物半导体装置及其制造方法 The nitride semiconductor device and manufacturing method thereof |
| 01/23/2013 | CN102891170A LDMOS (laterally diffused metal oxide semiconductor) transistor structure and manufacturing method thereof |
| 01/23/2013 | CN102891169A A Termination of high voltage (HV) devices with new configurations and manufacture methods thereof |
| 01/23/2013 | CN102891168A Semiconductor device with field threshold MOSFET for high voltage termination |
| 01/23/2013 | CN102891148A Structure and method for single gate non-volatile memory device |
| 01/23/2013 | CN102891146A Semiconductor device |
| 01/23/2013 | CN102891145A Metal gate structure of a CMOS semiconductor device and method of forming the same |
| 01/23/2013 | CN102891144A Differential variable capacitor element |
| 01/23/2013 | CN102891142A Semiconductor devices with orientation-free decoupling capacitors and methods of manufacture thereof |
| 01/23/2013 | CN102891110A Semiconductor integrated device and manufacturing method of semiconductor integrated device |
| 01/23/2013 | CN102891100A Shallow-trench isolation structure and formation method thereof |
| 01/23/2013 | CN102891088A Method for manufacturing vertical double diffusion metal oxide semiconductor field effect transistor device |
| 01/23/2013 | CN102891087A Semiconductor device structure insulated from a bulk silicon substrate and method of forming the same |
| 01/23/2013 | CN102891085A Semiconductor component with metal gate and manufacturing method thereof |
| 01/23/2013 | CN102891082A Insulate gate bipolar transistor and manufacturing method thereof |
| 01/23/2013 | CN102891076A Structure of MOS (metal oxide semiconductor) transistor and formation method thereof |
| 01/23/2013 | CN102439748B Organic element for electroluminescent devices |
| 01/23/2013 | CN102354703B Planar structure-type superhigh-voltage diode chip |
| 01/23/2013 | CN102270663B Planar power MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with super junction structure and manufacturing method of planar power MOSFET device |
| 01/23/2013 | CN102222618B Trench metal oxide semiconductor field effect tube |
| 01/23/2013 | CN102148261B Manufacturing method of capacitor structure |
| 01/23/2013 | CN102142370B Preparation method of diode chip on P+ substrate and structure of diode chip |
| 01/23/2013 | CN102104071B Power metal-oxide-semiconductor field effect transistor (MOSFET) and manufacturing method thereof |
| 01/23/2013 | CN102097320B NMOS (N-channel Metal Oxide Semiconductor) device and forming method thereof |
| 01/23/2013 | CN102084483B Semiconductor element and manufacturing method therefor |
| 01/23/2013 | CN102064110B LDMOS transistor, method for fabricating the same and power field effect transistor |
| 01/23/2013 | CN102034859B Compound semiconductor device and method of manufacturing the same |
| 01/23/2013 | CN101916771B A method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode |
| 01/23/2013 | CN101908558B Semiconductor device |
| 01/23/2013 | CN101908506B Semiconductor apparatus and method for fabricating the same |
| 01/23/2013 | CN101874295B Method for manufacturing flexible semiconductor device and multilayer film used therein |
| 01/23/2013 | CN101853918B Single-electron magnetic resistance structure and application thereof |
| 01/23/2013 | CN101853851B Capacitive element, manufacturing method of the same, solid-state imaging device, and imaging apparatus |
| 01/23/2013 | CN101819971B Thin film transistor for liquid crystal display |
| 01/23/2013 | CN101740601B Resistive memory device and method of fabricating the same |
| 01/23/2013 | CN101719506B Voltage-withstanding stable semiconductor device structure |
| 01/23/2013 | CN101630660B Method for improving irradiation resistance of CMOS transistor, SMOS transistor and integrated circuit |
| 01/23/2013 | CN101626020B Low clamp voltage ESD device and method therefor |
| 01/23/2013 | CN101589478B Tunable wavelength light emitting diode |
| 01/23/2013 | CN101552275B Memory cell structure, memory device and integrated circuit |
| 01/23/2013 | CN101490821B Subresolution silicon features and methods for forming the same |
| 01/23/2013 | CN101473444B Semiconductor device and method of manufacturing the same |
| 01/23/2013 | CN101461065B Power device with improved edge termination |
| 01/23/2013 | CN101331609B Trenched semiconductor device |
| 01/23/2013 | CN101278404B Transistor element, display device and these manufacturing methods |
| 01/23/2013 | CN101221976B 有机发光装置及其制造方法 The organic light emitting device and manufacturing method |
| 01/22/2013 | US8358015 Layered chip package and method of manufacturing same |
| 01/22/2013 | US8358012 Metal semiconductor alloy structure for low contact resistance |
| 01/22/2013 | US8357995 Semiconductor element |
| 01/22/2013 | US8357992 Non-volatile memory device and method of manufacturing the same |
| 01/22/2013 | US8357990 Semiconductor device |
| 01/22/2013 | US8357989 Semiconductor device and method for manufacturing the same |
| 01/22/2013 | US8357986 High speed orthogonal gate EDMOS device and fabrication |
| 01/22/2013 | US8357985 Bipolar transistor with guard region |
| 01/22/2013 | US8357983 Hall effect element having a wide cross shape with dimensions selected to result in improved performance characteristics |
| 01/22/2013 | US8357982 Magnetic memory |
| 01/22/2013 | US8357981 Transducer devices having different frequencies based on layer thicknesses and method of fabricating the same |
| 01/22/2013 | US8357979 Electronic device comprising a field effect transistor for high-frequency applications |
| 01/22/2013 | US8357978 Methods of forming semiconductor devices with replacement gate structures |
| 01/22/2013 | US8357974 Semiconductor on glass substrate with stiffening layer and process of making the same |
| 01/22/2013 | US8357973 Inverted-trench grounded-source FET structure with trenched source body short electrode |
| 01/22/2013 | US8357972 Semiconductor power device |
| 01/22/2013 | US8357971 Trench gate MOSFET and method of manufacturing the same |
| 01/22/2013 | US8357970 Multi-level charge storage transistors and associated methods |
| 01/22/2013 | US8357969 Semiconductor device having vertical channel transistor and manufacturing method of the same |
| 01/22/2013 | US8357968 Non-volatile memory semiconductor device |
| 01/22/2013 | US8357967 Methods of forming memory cells |
| 01/22/2013 | US8357966 Semiconductor device and method for manufacturing semiconductor device |
| 01/22/2013 | US8357965 Semiconductor device having multiple storage regions |
| 01/22/2013 | US8357964 Three-dimensional dynamic random access memory with an ancillary electrode structure |
| 01/22/2013 | US8357961 Organic EL device |
| 01/22/2013 | US8357958 Integrated CMOS porous sensor |