| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 01/24/2013 | WO2013011548A1 Method for manufacturing semiconductor device |
| 01/24/2013 | WO2013010829A1 Method for growing iii-v epitaxial layers and semiconductor structure |
| 01/24/2013 | WO2013010828A1 Method for growing iii-v epitaxial layers |
| 01/24/2013 | WO2013010340A1 Semiconductor device structure and manufacturing method thereof |
| 01/24/2013 | WO2013010299A1 Semiconductor device and method for manufacturing same |
| 01/24/2013 | WO2012158464A3 Gan hemts with a back gate connected to the source |
| 01/24/2013 | US20130023101 Method and manufacture for embedded flash to achieve high quality spacers for core and high voltage devices and low temperature spacers for high performance logic devices |
| 01/24/2013 | US20130022072 Iii-v photonic integration on silicon |
| 01/24/2013 | US20130021840 Semiconductor device and method of manufacturing the same |
| 01/24/2013 | US20130021061 Tunnel field-effect transistor |
| 01/24/2013 | US20130020726 Package module structure for high power device with metal substrate and method of manufacturing the same |
| 01/24/2013 | US20130020693 Chip package structure and method for forming the same |
| 01/24/2013 | US20130020691 Method of Manufacturing a Semiconductor Device |
| 01/24/2013 | US20130020684 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same |
| 01/24/2013 | US20130020682 Wafer backside defectivity clean-up utilizing slective removal of substrate material |
| 01/24/2013 | US20130020681 Process for preparing a bonding type semiconductor substrate |
| 01/24/2013 | US20130020680 Semiconductor structure and a method for manufacturing the same |
| 01/24/2013 | US20130020678 Semiconductor Devices with Orientation-Free Decoupling Capacitors and Methods of Manufacture Thereof |
| 01/24/2013 | US20130020676 Solenoid inductor for frequency synthesizer in digital cmos process |
| 01/24/2013 | US20130020672 System and Method for Packaging of High-Voltage Semiconductor Devices |
| 01/24/2013 | US20130020671 Termination of high voltage (HV) devices with new configurations and methods |
| 01/24/2013 | US20130020659 Magnetoresistive element and magnetic memory |
| 01/24/2013 | US20130020658 Replacement gate electrode with planar work function material layers |
| 01/24/2013 | US20130020657 Metal oxide semiconductor transistor and method of manufacturing the same |
| 01/24/2013 | US20130020656 High performance hkmg stack for gate first integration |
| 01/24/2013 | US20130020655 Semiconductor device and manufacturing method thereof |
| 01/24/2013 | US20130020653 Shallow Trench Isolation Structure, Manufacturing Method Thereof and a Device Based on the Structure |
| 01/24/2013 | US20130020648 Semiconductor device |
| 01/24/2013 | US20130020647 Semiconductor devices and methods of fabricating the same |
| 01/24/2013 | US20130020645 Esd field-effect transistor and integrated diffusion resistor |
| 01/24/2013 | US20130020643 Transistor and its Method of Manufacture |
| 01/24/2013 | US20130020640 Semiconductor device structure insulated from a bulk silicon substrate and method of forming the same |
| 01/24/2013 | US20130020637 Electronic device and a transistor including a trench and a sidewall doped region |
| 01/24/2013 | US20130020636 High Voltage Device and Manufacturing Method Thereof |
| 01/24/2013 | US20130020634 Semiconductor Device and Electric Power Conversion System Using The Same |
| 01/24/2013 | US20130020633 Semiconductor device |
| 01/24/2013 | US20130020632 Lateral transistor with capacitively depleted drift region |
| 01/24/2013 | US20130020631 Memory Cell and Method of Manufacturing a Memory Cell |
| 01/24/2013 | US20130020630 Gate dielectric of semiconductor device |
| 01/24/2013 | US20130020629 Semiconductor memory device and method for manufacturing the same |
| 01/24/2013 | US20130020628 Process for fabricating a transistor comprising nanocrystals |
| 01/24/2013 | US20130020627 Shift register memory and method of manufacturing the same |
| 01/24/2013 | US20130020626 Memory cell with decoupled channels |
| 01/24/2013 | US20130020625 Manufacturing method and structure of non-volatile memory |
| 01/24/2013 | US20130020624 Memory structure |
| 01/24/2013 | US20130020619 Method for manufacturing semiconductor device |
| 01/24/2013 | US20130020618 Semiconductor device, formation method thereof, and package structure |
| 01/24/2013 | US20130020617 Nickel Alloy Target Including a Secondary Metal |
| 01/24/2013 | US20130020616 Silicided device with shallow impurity regions at interface between silicide and stressed liner |
| 01/24/2013 | US20130020615 Borderless Contacts in Semiconductor Devices |
| 01/24/2013 | US20130020614 Dual-gate normally-off nitride transistors |
| 01/24/2013 | US20130020613 Semiconductor device and manufacturing method thereof |
| 01/24/2013 | US20130020612 Re-growing Source/Drain Regions from Un-Relaxed Silicon Layer |
| 01/24/2013 | US20130020611 Semiconductor device and method of forming a structure in a target substrate for manufacturing a semiconductor device |
| 01/24/2013 | US20130020587 Power semiconductor device and method for manufacturing same |
| 01/24/2013 | US20130020586 Semiconductor device |
| 01/24/2013 | US20130020585 Silicon carbide substrate, semiconductor device, and methods for manufacturing them |
| 01/24/2013 | US20130020584 Semiconductor device and method for manufacturing same |
| 01/24/2013 | US20130020583 Epitaxial substrate and method for manufacturing epitaxial substrate |
| 01/24/2013 | US20130020582 Rapid fabrication methods for forming nitride based semiconductors based on freestanding nitride growth substrates |
| 01/24/2013 | US20130020581 Epitaxial wafer including nitride-based semiconductor layers |
| 01/24/2013 | US20130020579 Display Device |
| 01/24/2013 | US20130020578 Semiconductor Device and Method for Manufacturing the Same |
| 01/24/2013 | US20130020575 Semiconductor device and manufacturing method thereof |
| 01/24/2013 | US20130020573 Pressure detecting device and method for manufacturing the same, display device and method for manufacturing the same, and tft substrate with pressure detecting device |
| 01/24/2013 | US20130020571 Semiconductor device |
| 01/24/2013 | US20130020570 Semiconductor device |
| 01/24/2013 | US20130020569 Semiconductor device |
| 01/24/2013 | US20130020567 Thin film transistor having passivation layer comprising metal and method for fabricating the same |
| 01/24/2013 | US20130020557 Nanostructured transparent conducting electrode |
| 01/24/2013 | US20130020549 Systems and methods for fabricating longitudinally-shaped structures |
| 01/24/2013 | US20130019932 Nanostructure Array Substrate, Method for Fabricating the Same and Dye-Sensitized Solar Cell Using the Same |
| 01/24/2013 | DE112011100948T5 Integrierte Schaltung mit Finfets und MIM-FIN-Kondensator Integrated circuit with FinFETs and MIM capacitor FIN |
| 01/24/2013 | DE112011100841T5 Halbleitervorrichtung und verfahren zur herstellung der halbleitervorrichtung A semiconductor device and method of manufacturing the semiconductor device |
| 01/24/2013 | DE112010005443T5 Halbleitervorrichtung mit einem Halbleitersubstrat mit einem Diodenbereich und einem IGBT-Bereich A semiconductor device comprising a semiconductor substrate with a diode region and a IGBT region |
| 01/24/2013 | DE112010005278T5 Pin-diode PIN diode |
| 01/24/2013 | DE112010004999T5 Polymerverbindung und Dünnschicht und Tintenzusammensetzung, die jeweils dieselbe enthalten Polymer compound and thin-film and the ink composition each containing the same |
| 01/24/2013 | DE112010002754T5 Halbleitervorrichtung Semiconductor device |
| 01/24/2013 | DE112009004744T5 Halbleiterbauelement und Verfahren zu dessen Herstellung Semiconductor device and process for its preparation |
| 01/24/2013 | DE112009000642B4 LDMOS Vorrichtungen mit verbesserten Architekturen und Herstellungsverfahren dafür LDMOS devices with improved architectures and manufacturing method thereof |
| 01/24/2013 | DE102012200957A1 Bauelement mit einer mikromechanischen Mikrofonstruktur Component having a micromechanical microphone structure |
| 01/24/2013 | DE102011079569A1 Aktive Transistor-Klemmschaltung Active transistor clamp circuit |
| 01/24/2013 | DE10107327B4 Zur Verhinderung einer unnötigen Oszillation geeigneter Winkelgeschwindigkeitssensor To prevent unnecessary oscillation suitable angular velocity sensor |
| 01/23/2013 | EP2549541A1 Solid body diode |
| 01/23/2013 | EP2549540A2 High-voltage vertical FET |
| 01/23/2013 | EP2549539A1 Semiconductor device and electric power conversion system using the same |
| 01/23/2013 | EP2549528A1 Compound semiconductor device and manufacturing method for same |
| 01/23/2013 | EP2549522A1 Semiconductor thin-film manufacturing method, seminconductor thin-film manufacturing apparatus, susceptor, and susceptor holding tool |
| 01/23/2013 | EP2548230A1 Trench dmos device with improved termination structure for high voltage applications |
| 01/23/2013 | EP2548229A1 Multilayer diffusion barriers for wide bandgap schottky barrier devices |
| 01/23/2013 | EP2548228A1 Manufacture of graphene-based apparatus |
| 01/23/2013 | EP2548227A2 Techniques for providing a semiconductor memory device |
| 01/23/2013 | CN202695453U Lateral transistor |
| 01/23/2013 | CN202695452U A trench type single shielding junction power MOSFET having embedded electrodes |
| 01/23/2013 | CN202695451U Shield electrode type trench power MOSFET |
| 01/23/2013 | CN202695450U A multi-step trench type electric field shielding power MOSFET having embedded electrodes |
| 01/23/2013 | CN202695449U Embedded trench type power MOSFET |
| 01/23/2013 | CN202695448U Controllable silicon crystal brake tube module |
| 01/23/2013 | CN202695447U 绝缘栅双极型晶体管 Insulated gate bipolar transistors |
| 01/23/2013 | CN202695435U 独立可控晶闸管模块 Independently controllable thyristor module |