Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
02/2013
02/05/2013US8368047 Semiconductor device
02/05/2013US8368046 Light-emitting element
02/05/2013US8368045 Infrared photodetector
02/05/2013US8368044 Electronic device comprising a convertible structure
02/05/2013US8367543 Structure and method to improve current-carrying capabilities of C4 joints
02/05/2013US8367521 Manufacture of thin silicon-on-insulator (SOI) structures
02/05/2013US8367520 Methods and structures for altering strain in III-nitride materials
02/05/2013US8367500 Method of forming self aligned contacts for a power MOSFET
02/05/2013US8367499 Method for manufacturing semiconductor device with first and second gates over buried bit line
02/05/2013US8367489 Method of fabricating a stacked oxide material for thin film transistor
02/05/2013US8367488 Manufacturing method of flexible semiconductor device
02/05/2013US8367486 Transistor and method for manufacturing the transistor
02/05/2013US8367460 Horizontally oriented and vertically stacked memory cells
02/05/2013US8367450 Light emitting system and method of fabricating and using the same
02/05/2013US8367441 Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
02/05/2013US8367440 Semiconductor device and peeling off method and method of manufacturing semiconductor device
02/05/2013US8366905 Apparatus having reduced noise and method of using the apparatus for detecting ionic materials
01/2013
01/31/2013WO2013016486A1 Nanopore sensors for biomolecular characterization
01/31/2013WO2013016338A1 Methods and apparatus for forming semiconductor structures
01/31/2013WO2013016273A2 Multiple well drain engineering for hv mos devices
01/31/2013WO2013016089A1 Threshold adjustment of transistors by controlled s/d underlap
01/31/2013WO2013016027A1 Memory device with a textured lowered electrode
01/31/2013WO2013015573A2 Field-effect transistor using graphene oxide and method for manufacturing same
01/31/2013WO2013015421A1 Semiconductor device
01/31/2013WO2013015322A1 Etchant for copper/molybdenum-based multilayer thin film
01/31/2013WO2013015014A1 Super junction semiconductor device
01/31/2013WO2013015004A1 Magnetoresistive element
01/31/2013WO2013014943A2 Diode, semiconductor device, and mosfet
01/31/2013WO2013014892A1 Spin device, method for operating same, and method for manufacturing same
01/31/2013WO2013014885A1 Active-matrix substrate and liquid crystal display panel using same
01/31/2013WO2013014547A1 Tunnel field-effect transistor
01/31/2013WO2013013959A2 High-voltage transistor component and production method
01/31/2013WO2013013698A1 A semiconductor device
01/31/2013WO2013013599A1 Array substrate and manufacturing method thereof, liquid crystal panel, and display device
01/31/2013WO2013013586A1 Thin film transistor, manufacturing method thereof and array substrate including same
01/31/2013WO2013013472A1 Semiconductor field effect transistor structure and preparation method thereof
01/31/2013WO2013013471A1 Semiconductor device structure and manufacturing method thereof
01/31/2013WO2013013418A1 Hexagonal boron nitride substrate having steps of single atom layer, preparation process and use thereof
01/31/2013WO2012138903A3 Dual active layers for semiconductor devices and methods of manufacturing the same
01/31/2013US20130029447 Semiconductor device and manufacturing method thereof, delamination method, and transferring method
01/31/2013US20130028016 Memory Cells and Methods of Storing Information
01/31/2013US20130028013 Magnetoresistive effect element, magnetic memory cell using same, and random access memory
01/31/2013US20130027627 Thin film transistor substrate, liquid crystal display having same, and method of manufacturing the same
01/31/2013US20130027073 Integrated circuit comprising at least an integrated antenna
01/31/2013US20130026663 Method for curing defects in a semiconductor layer
01/31/2013US20130026611 Semiconductor substrate including doped zones forming p-n junctions
01/31/2013US20130026610 Lithography method and device
01/31/2013US20130026608 Process for manufacturing a semiconductor structure comprising a functionalized layer on a support substrate
01/31/2013US20130026607 Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
01/31/2013US20130026604 Lateral avalanche photodiode structure
01/31/2013US20130026603 Semiconductor device and method of manufacturing the same
01/31/2013US20130026602 Semiconductor device
01/31/2013US20130026600 Forming air gaps in memory arrays and memory arrays with air gaps thus formed
01/31/2013US20130026599 Semiconductor device
01/31/2013US20130026598 Schottky barrier diode
01/31/2013US20130026597 Method of generating electrical energy in an integrated circuit during the operation of the latter, corresponding integrated circuit and method of fabrication
01/31/2013US20130026590 Sloped structure, method for manufacturing sloped structure, and spectrum sensor
01/31/2013US20130026585 MRAM Device and Fabrication Method Thereof
01/31/2013US20130026584 Micro-Electromechanical System Devices
01/31/2013US20130026583 Vibrating device and electronic apparatus
01/31/2013US20130026582 Partial poly amorphization for channeling prevention
01/31/2013US20130026578 Semiconductor device and method of manufacturing the same
01/31/2013US20130026574 Semiconductor device, method for manufacturing same, and display device
01/31/2013US20130026573 Body contact soi transistor structure and method of making
01/31/2013US20130026570 Borderless contact for ultra-thin body devices
01/31/2013US20130026569 Methods and apparatus related to hot carrier injection reliability improvement
01/31/2013US20130026565 Low rdson resistance ldmos
01/31/2013US20130026564 Methods of Fabricating Semiconductor Devices
01/31/2013US20130026563 Structures and methods for forming high density trench field effect transistors
01/31/2013US20130026562 Vertical memory cell
01/31/2013US20130026561 Vertical Transistor with Improved Robustness
01/31/2013US20130026560 Semiconductor device
01/31/2013US20130026559 Silicon-carbide mosfet cell structure and method for forming same
01/31/2013US20130026558 Semiconductor devices including variable resistance material and methods of fabricating the same
01/31/2013US20130026557 Sonos non-volatile memory cell and fabricating method thereof
01/31/2013US20130026556 Nand type flash memory for increasing data read/write reliability
01/31/2013US20130026555 Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodes
01/31/2013US20130026554 Nand type flash memory for increasing data read/write reliability
01/31/2013US20130026553 NVM Bitcell with a Replacement Control Gate and Additional Floating Gate
01/31/2013US20130026552 Split-gate flash memory exhibiting reduced interference
01/31/2013US20130026551 Semiconductor integrated circuit having reservoir capacitor
01/31/2013US20130026549 Semiconductor integrated circuit having capacitor for providing stable power and method of manufacturing the same
01/31/2013US20130026546 Integrated circuit comprising an isolating trench and corresponding method
01/31/2013US20130026545 Multiple well drain engineering for hv mos devices
01/31/2013US20130026543 Semiconductor device and manufacturing method thereof
01/31/2013US20130026542 Semiconductor device
01/31/2013US20130026540 Methods and apparatus for forming semiconductor structures
01/31/2013US20130026539 Replacement source/drain finfet fabrication
01/31/2013US20130026538 Semiconductor device having epitaxial structures
01/31/2013US20130026537 Power semiconductor device
01/31/2013US20130026536 Insulated gate semiconductor device with optimized breakdown voltage, and manufacturing method thereof
01/31/2013US20130026497 Silicon carbide substrate manufacturing method and silicon carbide substrate
01/31/2013US20130026496 Semiconductor Device and Manufacturing Method Thereof
01/31/2013US20130026495 III-Nitride Metal Insulator Semiconductor Field effect Transistor
01/31/2013US20130026494 Silicon carbide semiconductor device
01/31/2013US20130026493 Sic devices with high blocking voltage terminated by a negative bevel
01/31/2013US20130026490 Glass/ceramics replacement of epoxy for high temperature hermetically sealed non-axial electronic packages
01/31/2013US20130026489 AlN BUFFER N-POLAR GaN HEMT PROFILE
01/31/2013US20130026488 Epitaxial substrate and method for manufacturing epitaxial substrate
01/31/2013US20130026486 Epitaxial substrate and method for manufacturing epitaxial substrate