| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/07/2013 | US20130032881 Asymmetric Source-Drain Field Effect Transistor and Method of Making |
| 02/07/2013 | US20130032880 High voltage device and manufacturing method thereof |
| 02/07/2013 | US20130032879 Semiconductor device and method for forming the same |
| 02/07/2013 | US20130032878 Semiconductor device |
| 02/07/2013 | US20130032877 N-channel transistor comprising a high-k metal gate electrode structure and a reduced series resistance by epitaxially formed semiconductor material in the drain and source areas |
| 02/07/2013 | US20130032876 Replacement Gate ETSOI with Sharp Junction |
| 02/07/2013 | US20130032875 Semiconductor devices and methods of fabricating the same |
| 02/07/2013 | US20130032874 Method for manufacturing nonvolatile semiconductor memory device and nonvolatile semiconductor memory device |
| 02/07/2013 | US20130032873 Semiconductor memory device and method for manufacturing the same |
| 02/07/2013 | US20130032872 Non-volatile Memory Cell Having A High K Dielectric And Metal Gate |
| 02/07/2013 | US20130032871 Semiconductor device having air gap and method of fabricating the same |
| 02/07/2013 | US20130032870 Methods of forming a multi-tiered semiconductor device and apparatuses including the same |
| 02/07/2013 | US20130032869 Split-gate flash memory with improved program efficiency |
| 02/07/2013 | US20130032868 Trench capacitor with spacer-less fabrication process |
| 02/07/2013 | US20130032866 Semiconductor device and manufacturing method thereof |
| 02/07/2013 | US20130032865 Fabrication of field-effect transistors with atomic layer doping |
| 02/07/2013 | US20130032864 Transistor with boot shaped source/drain regions |
| 02/07/2013 | US20130032861 Touch panel and method for manufacturing the same |
| 02/07/2013 | US20130032860 HFET with low access resistance |
| 02/07/2013 | US20130032859 Epitaxial extension cmos transistor |
| 02/07/2013 | US20130032858 Rare earth oxy-nitride buffered iii-n on silicon |
| 02/07/2013 | US20130032857 Silicon-Germanium Hydrides and Methods for Making and Using Same |
| 02/07/2013 | US20130032856 Semiconductor apparatus |
| 02/07/2013 | US20130032855 Semiconductor Arrangement |
| 02/07/2013 | US20130032854 Rectirier |
| 02/07/2013 | US20130032824 Silicon carbide semiconductor device |
| 02/07/2013 | US20130032823 Silicon carbide semiconductor device |
| 02/07/2013 | US20130032822 Substrate, semiconductor device, and method of manufacturing the same |
| 02/07/2013 | US20130032821 Schottky barrier diode and method for manufacturing the same |
| 02/07/2013 | US20130032819 Semiconductor transistor |
| 02/07/2013 | US20130032818 Semiconductor device and method for manufacturing semiconductor device |
| 02/07/2013 | US20130032816 High electron mobility transistors and methods of manufacturing the same |
| 02/07/2013 | US20130032814 Method and system for formation of p-n junctions in gallium nitride based electronics |
| 02/07/2013 | US20130032813 Method and system for doping control in gallium nitride based devices |
| 02/07/2013 | US20130032812 Method and system for a gan vertical jfet utilizing a regrown channel |
| 02/07/2013 | US20130032811 Method and system for a gan vertical jfet utilizing a regrown gate |
| 02/07/2013 | US20130032809 Semiconductor Devices with Non-Implanted Barrier Regions and Methods of Fabricating Same |
| 02/07/2013 | US20130032798 Oxide for semiconductor layer of thin-film transistor, sputtering target, and thin-film transistor |
| 02/07/2013 | US20130032797 Field-effect transistor and method for manufacturing the same |
| 02/07/2013 | US20130032796 Self-aligned metal oxide tft with reduced number of masks |
| 02/07/2013 | US20130032795 Semiconductor device |
| 02/07/2013 | US20130032794 Thin film transistor and thin film transistor array panel |
| 02/07/2013 | US20130032793 Thin film transistor array panel and manufacturing method thereof |
| 02/07/2013 | US20130032784 Thin film transistor including a nanoconductor layer |
| 02/07/2013 | US20130032783 Non-planar germanium quantum well devices |
| 02/07/2013 | US20130032781 Epitaxial substrate and method for manufacturing epitaxial substrate |
| 02/07/2013 | US20130032778 Electron emitting source and substrate for thin film growth |
| 02/07/2013 | US20130032777 Semiconductor Device and Manufacturing Method thereof |
| 02/07/2013 | DE112011101488T5 Transistor mit durch einen durch Implantation entspannten vergrabenen Stressor induzierter Längsverspannung im Kanal Transistor with induced by a relaxed by implantation buried stressor longitudinal stress in the channel |
| 02/07/2013 | DE112011101215T5 Metall-Gate-Stapel mit hoher Dielektrizitätskonstante K Metal gate stack with a high dielectric constant K |
| 02/07/2013 | DE112007000010B4 Halbleitervorrichtung mit IGBT-Zelle und Diodenzelle, sowie Verfahren zur Gestaltung hiervon A semiconductor device comprising IGBT cell and diode cell, and methods thereof for the design of |
| 02/07/2013 | DE10362334B4 Halbleitervorrichtung mit epitaktisch gefülltem Graben und Verfahren zur Herstellung einer Halbleitervorrichtung mit epitaktisch gefülltem Graben A semiconductor device comprising epitaxially filled trench and method of manufacturing a semiconductor device having epitaxially filled trench |
| 02/07/2013 | DE102011080258A1 Super-Junction-Schottky-Oxid-PiN-Diode Super junction Schottky-oxide-PiN diode |
| 02/07/2013 | DE102011076696B4 Verfahren zur Leistungssteigerung in Transistoren durch Vorsehen eines eingebetteten verformungsinduzierenden Halbleitermaterials auf der Grundlage einer Saatschicht und entsprechendes Halbleiterbauelement Performance improvement processes in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer and corresponding semiconductor device |
| 02/07/2013 | DE102005034120B4 Verfahren zur Herstellung einer Halbleiterscheibe A process for producing a semiconductor wafer |
| 02/07/2013 | DE102004014744B4 Halbleiterbaugruppe mit einem Graben zum Treiben eines Schaltselement und Vermeiden eines Latch-up Durchbruchs Semiconductor device having a trench for driving a switching element and avoiding a latch-up breakdown |
| 02/06/2013 | EP2555594A1 Donor substrate for transfer, device manufacturing method and organic element |
| 02/06/2013 | EP2555248A1 Schottky barrier diode and method for manufacturing the same |
| 02/06/2013 | EP2555247A2 Thin film transistor including a nanoconductor layer |
| 02/06/2013 | EP2555246A1 Semiconductor device and method for producing same |
| 02/06/2013 | EP2555241A1 IC die, semiconductor package, printed circuit board and IC die manufacturing method |
| 02/06/2013 | EP2555232A1 Epitaxial substrate for semiconductor element and semiconductor element |
| 02/06/2013 | EP2555231A1 Field effect transistor |
| 02/06/2013 | EP2555230A2 Method of manufacturing power device |
| 02/06/2013 | EP2554952A1 Flowrate sensor and flowrate detection device |
| 02/06/2013 | EP2554719A1 Epitaxial substrate and method for manufacturing epitaxial substrate |
| 02/06/2013 | EP2553730A2 Semiconductor device and method |
| 02/06/2013 | EP2553715A1 Semiconductor device and method of forming a structure in a target substrate for manufacturing a semiconductor device |
| 02/06/2013 | CN202721133U 功率二极管器件 Power diode device |
| 02/06/2013 | CN202721132U Multilayer press-fit power rectification tube chip structure |
| 02/06/2013 | CN202721131U Vertical semiconductor device |
| 02/06/2013 | CN202721130U Mesa bidirectional trigger diode |
| 02/06/2013 | CN202721128U Thin film transistor substrate |
| 02/06/2013 | CN102918769A Semiconductor device and solid state relay using same |
| 02/06/2013 | CN102918663A Semiconductor device and method of producing the same |
| 02/06/2013 | CN102918650A Transistor |
| 02/06/2013 | CN102918645A Electronic devices and systems, and methods for making and using the same |
| 02/06/2013 | CN102918636A NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors |
| 02/06/2013 | CN102918632A Method for providing a metal electrode on the surface of a hydrophobic material |
| 02/06/2013 | CN102918401A Dynamic sensor |
| 02/06/2013 | CN102918004A 溅射靶 Sputtering target |
| 02/06/2013 | CN102918003A Sintered oxide material, target comprising same, and oxide semiconductor thin film |
| 02/06/2013 | CN102916055A Trenched Schottky-barrier diode and manufacturing method thereof |
| 02/06/2013 | CN102916054A Schottky barrier diode and method for manufacturing the same |
| 02/06/2013 | CN102916053A Storage device and fabrication method of storage device |
| 02/06/2013 | CN102916052A Thin film transistor having crystalline indium oxide semiconductor film |
| 02/06/2013 | CN102916051A Thin-film transistor, manufacturing method of thin-film transistor, array substrate and display device |
| 02/06/2013 | CN102916050A Thin film transistor and thin film transistor array panel |
| 02/06/2013 | CN102916049A Semiconductor device comprising junction type filed effect transistor and manufacturing method thereof |
| 02/06/2013 | CN102916048A Junctionless silicon nanowire transistor based on bulk-silicon material and method for manufacturing junctionless silicon nanowire transistor |
| 02/06/2013 | CN102916047A Contact structure of SOI (silicon-on-insulator) body and forming method of contact structure based on buried oxide corrosion technology |
| 02/06/2013 | CN102916046A Nitride high-voltage device on silicon substrate and manufacturing method thereof |
| 02/06/2013 | CN102916045A Semiconductor device and method for manufacturing semiconductor device |
| 02/06/2013 | CN102916044A High electron mobility transistors and methods of manufacturing the same |
| 02/06/2013 | CN102916043A MOS-HEMT (Metal-oxide-semiconductor High-electron-mobility Transistor) device and manufacturing method thereof |
| 02/06/2013 | CN102916042A Reverse IGBT (insulated gate bipolar transistor) device structure and manufacturing method therefor |
| 02/06/2013 | CN102916041A Germanium-silicon heterojunction bipolar transistor based on SOI (Silicon On Insulator) and manufacturing method thereof |
| 02/06/2013 | CN102916040A Tri-polycrystal SOI SiGe HBT (Heterojunction Bipolar Transistor) planar integrated device and preparation method thereof |
| 02/06/2013 | CN102916039A Semiconductor structure with beryllium oxide |
| 02/06/2013 | CN102916038A Field effect transistor and manufacturing method thereof |