| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/13/2013 | CN1873989B Thin film transistor and method of fabricating thin film transistor substrate |
| 02/13/2013 | CN1715442B Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition |
| 02/13/2013 | CN102934232A 场效应晶体管 FET |
| 02/13/2013 | CN102934231A Power semiconductor device |
| 02/13/2013 | CN102934230A Manufacture of graphene-based apparatus |
| 02/13/2013 | CN102934210A Silicon carbide semiconductor device manufacturing method |
| 02/13/2013 | CN102934153A Thin-film semiconductor device for display device, method for producing thin-film semiconductor device for display device, el display panel and el display device |
| 02/13/2013 | CN102931239A Semiconductor device and manufacturing method thereof |
| 02/13/2013 | CN102931238A Constant-current semiconductor element with Schottky barrier |
| 02/13/2013 | CN102931237A Structure of perpendicular asymmetric ring gating metal oxide semiconductor field effect transistor (MOSFET) device and manufacturing method thereof |
| 02/13/2013 | CN102931236A 半导体装置 Semiconductor device |
| 02/13/2013 | CN102931235A MOS (Metal Oxide Semiconductor) transistor and manufacturing method thereof |
| 02/13/2013 | CN102931234A LDMOS (Laterally Diffused Metal Oxide Semiconductor) device and manufacturing method thereof |
| 02/13/2013 | CN102931233A N-channel metal oxide semiconductor (NMOS) transistor and forming method thereof |
| 02/13/2013 | CN102931232A MOS (Metal Oxide Semiconductor) transistor and forming method thereof |
| 02/13/2013 | CN102931231A III-V group semiconductor MOS field effect transistor with high mobility |
| 02/13/2013 | CN102931230A Double-heterojunction gallium nitride based HEMT (High Electron Mobility Transistor) taking aluminum-gallium-nitrogen as high-resistance layer and manufacturing method thereof |
| 02/13/2013 | CN102931229A AlGaN/GaN/InGaN double hetero-junction material and production method thereof |
| 02/13/2013 | CN102931228A Reverse conducting IGBT (Insulated Gate Bipolar Translator) device and manufacturing method thereof |
| 02/13/2013 | CN102931227A Power semiconductor device structure and preparation method on passivation semiconductor contact surface |
| 02/13/2013 | CN102931226A Self-aligned germanium-silicon heterojunction bipolar triode and manufacturing method for same |
| 02/13/2013 | CN102931225A Bipolar junction transistor (BJT) and manufacturing method thereof |
| 02/13/2013 | CN102931224A Interface transition layer composite structure used for P-SiC ohmic contact and preparation method thereof |
| 02/13/2013 | CN102931223A IGBT (Insulated Gate Bipolar Translator) collection electrode structure |
| 02/13/2013 | CN102931222A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/13/2013 | CN102931221A Semiconductor device and method of manufacturing the same |
| 02/13/2013 | CN102931220A Germanium-silicon heterojunction bipolar triode power device and manufacturing method thereof |
| 02/13/2013 | CN102931219A Semiconductor device and production method thereof |
| 02/13/2013 | CN102931218A Junction terminal structure for super junction device |
| 02/13/2013 | CN102931217A 半导体装置 Semiconductor device |
| 02/13/2013 | CN102931216A Insulated gate bipolar transistor structure integrated with Schottky diode and preparation method thereof |
| 02/13/2013 | CN102931215A IGBT (Insulated Gate Bipolar Transistor) structure integrated with low leakage-current Schottky diode and preparation method thereof |
| 02/13/2013 | CN102931203A Multiple gate dielectric structures and methods of forming the same |
| 02/13/2013 | CN102931196A SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) device |
| 02/13/2013 | CN102931193A CMOS integrated unit with high mobility |
| 02/13/2013 | CN102931192A Semiconductor device |
| 02/13/2013 | CN102931184A 半导体结构及其制法 The semiconductor structure Jiqizhifa |
| 02/13/2013 | CN102931183A Semiconductor element, electrostatic discharge protection element and manufacturing methods thereof |
| 02/13/2013 | CN102931175A Thyristor module |
| 02/13/2013 | CN102931139A Array substrate and manufacture method and display device thereof |
| 02/13/2013 | CN102931138A Array substrate and manufacturing method thereof and display device |
| 02/13/2013 | CN102931093A N-channel depletion type power MOSFET device and manufacturing method thereof |
| 02/13/2013 | CN102931091A Driving matrix type flat panel display device, thin film transistor and manufacturing method of driving matrix type flat panel display device and thin film transistor |
| 02/13/2013 | CN102931089A LDMOS (Laterally Diffused Metal Oxide Semiconductor) and manufacturing method thereof |
| 02/13/2013 | CN102931087A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/13/2013 | CN102931085A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/13/2013 | CN102931083A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/13/2013 | CN102931082A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/13/2013 | CN102931057A Graphene field-effect device based on gate dielectric structure and manufacturing method for graphene field-effect device |
| 02/13/2013 | CN102931053A PIP (Polysilicon-Insulating Layer-Polysilicon) capacitor and manufacturing method thereof |
| 02/13/2013 | CN102244009B 薄膜晶体管及其制造方法 A thin film transistor and its manufacturing method |
| 02/13/2013 | CN102184966B Transistor array substrate |
| 02/13/2013 | CN102136495B Structure of semiconductor high-voltage device and manufacturing method thereof |
| 02/13/2013 | CN102136493B High-voltage insulation type LDNMOS (laterally diffused metal oxide semiconductor) device and manufacture method thereof |
| 02/13/2013 | CN102130170B High-voltage isolated N-type transistor and high-voltage isolated P-type transistor |
| 02/13/2013 | CN102130120B 二极管及其制造方法 Diode and its manufacturing method |
| 02/13/2013 | CN102097484B Multichannel LDMOS (laterally diffused metal oxide semiconductor) and preparation method thereof |
| 02/13/2013 | CN102082174B High voltage devices and methods for forming the high voltage devices |
| 02/13/2013 | CN102064187B Silicon carbide consubstantial PIN (Personal Identification Number) microstructure material and preparation method thereof |
| 02/13/2013 | CN102034876B Semiconductor device having SOI substrate and method for manufacturing the same |
| 02/13/2013 | CN102007583B Processes for producing dielectric film and semiconductor device, dielectric film, and recording medium |
| 02/13/2013 | CN101933141B 半导体装置 Semiconductor device |
| 02/13/2013 | CN101887897B TFT-LCD (Thin Film Transistor Liquid Crystal Display) array base plate and manufacturing method thereof |
| 02/13/2013 | CN101884107B Hetero-structured, inverted-t field effect transistor |
| 02/13/2013 | CN101877307B Method for obtaining alternative P-type and N-type semiconductor device structure and device structure thereof |
| 02/13/2013 | CN101855727B Spin transistor and method of operating the same |
| 02/13/2013 | CN101853856B Semiconductor devices and formation methods thereof |
| 02/13/2013 | CN101849288B 半导体装置 Semiconductor device |
| 02/13/2013 | CN101807549B TFT-LCD (Thin Film Transistor Liquid Crystal Display) array substrate and manufacture method thereof |
| 02/13/2013 | CN101687709B Sintered silicon wafer |
| 02/13/2013 | CN101621075B Thin film transistor, method of manufacturing the same and flat panel display device having the same |
| 02/13/2013 | CN101522558B Encapsulating and transferring low dimensional structures |
| 02/13/2013 | CN101467050B 加速度传感器 Acceleration sensor |
| 02/13/2013 | CN101431016B Process for producing polycrystalline semiconductor thin film |
| 02/13/2013 | CN101350367B 液晶显示装置 The liquid crystal display device |
| 02/13/2013 | CN101325218B Field effect transistor, logic circuit including the same and methods of manufacturing the same |
| 02/13/2013 | CN101236969B Static RAM component |
| 02/13/2013 | CN101211084B Liquid crystal display panel and manufacturing method of the same |
| 02/12/2013 | US8374364 Acoustic sensor and method of manufacturing the same |
| 02/12/2013 | US8373814 Display panel and display panel device including the transistor connected to storage capacitor |
| 02/12/2013 | US8373811 Liquid crystal display device with each pixel having plural capacitors coupling to switches and related driving method |
| 02/12/2013 | US8373339 Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof |
| 02/12/2013 | US8373283 Adhesive composition, film-like adhesive, adhesive sheet and semiconductor device |
| 02/12/2013 | US8373282 Wafer level chip scale package with reduced stress on solder balls |
| 02/12/2013 | US8373281 Semiconductor module and portable apparatus provided with semiconductor module |
| 02/12/2013 | US8373277 Stacked die in die BGA package |
| 02/12/2013 | US8373273 Methods of forming integrated circuit devices having damascene interconnects therein with metal diffusion barrier layers and devices formed thereby |
| 02/12/2013 | US8373267 Electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure |
| 02/12/2013 | US8373255 Diode for adjusting pin resistance of a semiconductor device |
| 02/12/2013 | US8373253 Semiconductor structure |
| 02/12/2013 | US8373250 On-chip inductor structure and method for manufacturing the same |
| 02/12/2013 | US8373249 Programmable capacitor associated with an input/output pad |
| 02/12/2013 | US8373248 Linear-cap varactor structures for high-linearity applications |
| 02/12/2013 | US8373247 Semiconductor device |
| 02/12/2013 | US8373246 Semiconductor device comprising stack of pn junction diode and schottky barrier diode |
| 02/12/2013 | US8373245 2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same |
| 02/12/2013 | US8373240 Sensor device having a structure element |
| 02/12/2013 | US8373227 Semiconductor device and method having trenches in a drain extension region |
| 02/12/2013 | US8373226 Semiconductor device including a Trench-Gate Fin-FET |
| 02/12/2013 | US8373225 Super-junction trench MOSFET with Resurf stepped oxides and split gate electrodes |