| Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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| 02/05/2015 | US20150034971 Semiconductor device and method for manufacturing same |
| 02/05/2015 | US20150034970 Semiconductor device and method for producing same |
| 02/05/2015 | US20150034969 Method and system for a semiconductor device with integrated transient voltage suppression |
| 02/05/2015 | US20150034967 Semiconductor device |
| 02/05/2015 | US20150034966 Nitride-based field effect transistor and method of fabricating the same |
| 02/05/2015 | US20150034964 Gallium nitride-based diode and method of fabricating the same |
| 02/05/2015 | US20150034962 Integrated circuit with matching threshold voltages and method for making same |
| 02/05/2015 | US20150034961 AlN SINGLE CRYSTAL SCHOTTKY BARRIER DIODE AND METHOD OF PRODUCING THE SAME |
| 02/05/2015 | US20150034960 Method of manufacturing semiconductor device |
| 02/05/2015 | US20150034958 Hemt-compatible lateral rectifier structure |
| 02/05/2015 | US20150034957 Normally-off enhancement-mode misfet |
| 02/05/2015 | US20150034954 Semiconductor device |
| 02/05/2015 | US20150034951 Display device and manufacturing method thereof |
| 02/05/2015 | US20150034949 Semiconductor device and method for manufacturing semiconductor device |
| 02/05/2015 | US20150034948 Semiconductor device |
| 02/05/2015 | US20150034947 Oxide semiconductor film and semiconductor device |
| 02/05/2015 | US20150034945 Semiconductor device |
| 02/05/2015 | US20150034943 Thin film transistor array substrate |
| 02/05/2015 | US20150034942 Thin film transistor and method of manufacturing the same |
| 02/05/2015 | US20150034937 Light-Emitting Element and Display Device |
| 02/05/2015 | US20150034936 Light-emitting device and method of manufacturing the same |
| 02/05/2015 | US20150034933 Organic light emitting diode display having thin film transistor substrate using oxide semiconductor and method for manufacturing the same |
| 02/05/2015 | US20150034912 Thin film transistor substrate, display device having the same and method of manufacturing the same |
| 02/05/2015 | US20150034908 Semiconductor graphene structures, methods of forming such structures and semiconductor devices including such structures |
| 02/05/2015 | US20150034907 Gate-tunable p-n heterojunction diode, and fabrication method and application of same |
| 02/05/2015 | US20150034906 Semiconductor device and fabrication method thereof |
| 02/05/2015 | US20150034905 Semiconductor device and fabrication method thereof |
| 02/05/2015 | US20150034904 Semiconductor device and method of manufacturing semiconductor device |
| 02/05/2015 | US20150034903 Semiconductor device and method of manufacturing semiconductor device |
| 02/05/2015 | US20150034899 Semiconductor Device and Fabricating the Same |
| 02/05/2015 | US20150034896 Resistive-Switching Nonvolatile Memory Elements |
| 02/05/2015 | DE112012005084B4 Kanal-Druckspannung (PFET) und -Zugspannung (NFET) in Nanodraht-FETS, die mit einem Ersatz-Gate-Verfahren hergestellt werden Channel compressive stress (PFET) and tensile stress (NFET) in nanowire FETs that are produced by a replacement gate process |
| 02/05/2015 | DE112011103483B4 Verfahren und Struktur für pFET-Übergangs-Profil mit SiGe-Kanal Method and structure for pFET Cover strips with SiGe channel |
| 02/05/2015 | DE112006003451B4 Halbleiterleistungsvorrichtungen mit Grabenfeldplattenabschluss und Verfahren zu deren Ausbildung Semiconductor power devices with grave field plate Statements and methods of training |
| 02/05/2015 | DE102014212513A1 FinFet-Bauelement FinFET device |
| 02/05/2015 | DE102014110648A1 Halbleitervorrichtung mit randabschluss A semiconductor device having rand statements |
| 02/05/2015 | DE102014110497A1 Superjunction-halbleitervorrichtung und herstellungsverfahren Superjunction semiconductor device and manufacturing processes |
| 02/05/2015 | DE102013110023A1 Halbleitervorrichtung und Herstellung derselben A semiconductor device and manufacturing the same |
| 02/05/2015 | DE102011089322B4 Effizienzsteigerungen bei der Ultraviolett-Aushärtung einer zugverspannten Schicht unter Anwendung reflektierender Materialien Efficiency improvements in the ultraviolet curing of a tensile-strained layer using reflective materials |
| 02/04/2015 | EP2833412A2 Gallium nitride-based Schottky diode and method of fabricating the same |
| 02/04/2015 | EP2833411A2 Semiconductor device comprising a MIS transistor |
| 02/04/2015 | EP2833410A2 Nonvolatile memory transistor, device including the same and method of operating the transistor |
| 02/04/2015 | EP2833409A1 Field effect silicon carbide transistor |
| 02/04/2015 | EP2833408A2 Split gate non-volatile memory cell |
| 02/04/2015 | EP2833391A1 Semiconductor laminate and method for manufacturing same, method for manufacturing semiconductor device, semiconductor device, dopant composition, dopant injection layer, and method for forming doped layer |
| 02/04/2015 | EP2833153A1 Method for manufacturing capacitive acceleration sensor, device for manufacturing same, and capacitive acceleration sensor |
| 02/04/2015 | EP2831919A1 Integration of non-volatile charge trap memory devices and logic cmos devices |
| 02/04/2015 | EP2831918A1 Method of ono integration into logic cmos flow |
| 02/04/2015 | EP2831917A1 Oxide-nitride-oxide stack having multiple oxynitride layers |
| 02/04/2015 | EP2831916A1 Sonos stack with split nitride memory layer |
| 02/04/2015 | EP2831915A1 Dna computing |
| 02/04/2015 | CN204144270U 一种高压快恢复二极管芯片 A high voltage fast recovery diode chip |
| 02/04/2015 | CN204144269U 一种浪涌防护器件 One kind of surge protection devices |
| 02/04/2015 | CN204144268U 具有静电保护结构的功率器件 ESD-protected structures of power devices |
| 02/04/2015 | CN204144267U 一种注入增强型绝缘栅双极型晶体管 One kind of injection enhanced insulated gate bipolar transistor |
| 02/04/2015 | CN204144266U 注入增强型绝缘栅双极型晶体管 Injection enhanced insulated gate bipolar transistor |
| 02/04/2015 | CN204144265U 可减少功率器件导通电阻的栅极衬垫结构 Can reduce power device on-resistance gate pad structure |
| 02/04/2015 | CN204144264U 超结器件 Super-junction devices |
| 02/04/2015 | CN104335355A 薄膜晶体管 Thin film transistor |
| 02/04/2015 | CN104335354A 薄膜晶体管的半导体层用氧化物、薄膜晶体管、显示装置及溅射靶 The semiconductor thin-film transistor with an oxide layer, a thin film transistor, a display device, and sputtering target |
| 02/04/2015 | CN104335353A 薄膜晶体管 Thin film transistor |
| 02/04/2015 | CN104335346A 用于esd保护的半导体器件 Esd protection for semiconductor devices |
| 02/04/2015 | CN104335333A 含金属氧化物半导体层的制造方法和电子设备 An electronic device manufacturing method and a metal oxide semiconductor layer |
| 02/04/2015 | CN104335332A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/04/2015 | CN104335328A 碳化硅半导体装置的制造方法以及由该方法制造的碳化硅半导体装置 The method of manufacturing a silicon carbide semiconductor device and a silicon carbide semiconductor device manufactured by the method of |
| 02/04/2015 | CN104332504A 一种GaN基异质结肖特基二极管器件及其制作方法 One kind of GaN-based heterostructure Schottky diode device and manufacturing method thereof |
| 02/04/2015 | CN104332503A 一种高压快恢复二极管芯片及其生产工艺 A high voltage fast recovery diode chip and its manufacturing process |
| 02/04/2015 | CN104332502A 一种互补隧穿场效应晶体管及其制作方法 A complementary tunneling field effect transistor and its manufacturing method |
| 02/04/2015 | CN104332501A Nldmos器件及其制造方法 Nldmos device and manufacturing method |
| 02/04/2015 | CN104332500A 一种阻变栅隧穿场效应晶体管及制备方法 A resistor variable gate tunneling field effect transistor and method of preparation |
| 02/04/2015 | CN104332499A 一种vdmos器件及其终端结构的形成方法 Vdmos device and method for forming a terminal structure |
| 02/04/2015 | CN104332498A 一种斜场板功率器件及斜场板功率器件的制备方法 Preparation of a field plate oblique oblique field plate power devices and power devices |
| 02/04/2015 | CN104332497A 注入增强型绝缘栅双极型晶体管 Injection enhanced insulated gate bipolar transistor |
| 02/04/2015 | CN104332496A 一种注入增强型绝缘栅双极型晶体管 One kind of injection enhanced insulated gate bipolar transistor |
| 02/04/2015 | CN104332495A 一种绝缘栅双极晶体管及其制造方法 An insulated gate bipolar transistor and its manufacturing method |
| 02/04/2015 | CN104332494A 一种绝缘栅双极晶体管及其制造方法 An insulated gate bipolar transistor and its manufacturing method |
| 02/04/2015 | CN104332493A Soi器件及其构成静电保护器件结构 Soi device and an electrostatic protection device structure |
| 02/04/2015 | CN104332492A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/04/2015 | CN104332491A 采用金属延伸、多晶截止场板的终端单元结构及制造方法 Metal extension, the terminal unit structure and manufacturing method of a polycrystalline cutoff field plate |
| 02/04/2015 | CN104332490A 一种薄膜晶体管 A thin film transistor |
| 02/04/2015 | CN104332489A 半导体器件的具有表面超级结结构的终端 Terminal super junction structure having a surface of a semiconductor device |
| 02/04/2015 | CN104332488A 半导体器件、半导体器件终端及其制造方法 Semiconductor device, the terminal and method for manufacturing a semiconductor device |
| 02/04/2015 | CN104332476A 单元像素、阵列基板、显示装置及其制造方法 The unit pixels, the array substrate, a display device and manufacturing method thereof |
| 02/04/2015 | CN104332470A 一种集成电路装置 An integrated circuit device |
| 02/04/2015 | CN104332411A 半导体装置及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/04/2015 | CN104332406A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof |
| 02/04/2015 | CN104332405A 一种锗纳米线场效应晶体管及其制备方法 One kind of germanium nanowire field effect transistor and its preparation method |
| 02/04/2015 | CN104332404A Cmos工艺制造双极型晶体管的方法及双极型晶体管 Cmos technology manufacturing method of the bipolar transistor and the bipolar transistor |
| 02/04/2015 | CN103232032B 一种单组分双极性材料及其制备方法与应用 A single component bipolar material and preparation method and application |
| 02/04/2015 | CN103050521B 锗硅hbt器件的集电区引出结构及其制造方法 Collector region hbt SiGe device structure and manufacturing method leads |
| 02/04/2015 | CN103035720B 超级结器件及其制作方法 Super-junction device and manufacturing method thereof |
| 02/04/2015 | CN103022109B 局部氧化抬升外基区全自对准双极晶体管及其制备方法 Local oxidation of the whole outer base uplift self-aligned bipolar transistor and its preparation method |
| 02/04/2015 | CN102956636B 一种大电流n型绝缘体上硅横向绝缘栅双极型晶体管 A large current on the n-type silicon on insulator lateral insulated gate bipolar transistor |
| 02/04/2015 | CN102931215B 集成有低漏电肖特基二极管的igbt结构及其制备方法 Integrated low leakage Schottky diode structure and preparation method igbt |
| 02/04/2015 | CN102881653B 薄膜晶体管的制造方法及其制造的薄膜晶体管 The method of manufacturing a thin film transistor and a thin film transistor manufactured |
| 02/04/2015 | CN102790047B 串联ggNMOS管及制备方法、多VDD-VSS芯片 Series ggNMOS tube and preparation methods, multi-chip VDD-VSS |
| 02/04/2015 | CN102751318B 一种ZnO同质pn结及其制备方法 One kind of homogeneous ZnO pn junction and its preparation method |
| 02/04/2015 | CN102737993B 沟槽dmos器件及其制造方法 Device and method for manufacturing the trench dmos |
| 02/04/2015 | CN102709273B 用于连接平板显示设备的信号线的短路线结构 Short route for connecting flat panel display device structure of signal lines |
| 02/04/2015 | CN102694033B 肖特基二极管器件及其制造方法 Schottky diode device and a manufacturing method |