Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
04/2004
04/22/2004DE10246718A1 Field effect transistor comprises a semiconductor substrate, a source recess and a drain recess formed in the substrate, a recessed insulating layer, an electrically conducting filler layer, a gate dielectric, and a gate layer
04/22/2004DE10246389A1 Production of a trench semiconductor component used as a power semiconductor component comprises completely filling the trench with a further material before ion implantation is carried out
04/22/2004DE10196678T5 Herstellungsverfahren für einen Dünnfilmstrukturkörper Manufacturing method of a thin-film structure body
04/22/2004DE10196677T5 Elektrodenstruktur und Verfahren zum Herstellen eines Dünnschicht-Strukturkörpers Electrode structure and method of manufacturing a thin-film structure body
04/22/2004DE10196676T5 Substrat und Herstellungsverfahren dafür sowie Dünnschicht-Strukturkörper Substrate and manufacturing method thereof as well as thin-film structural body
04/22/2004DE10196643T5 Herstellungsverfahren für einen Dünnschicht-Strukturkörper Manufacturing method of a thin-film structure body
04/21/2004EP1411555A2 Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory
04/21/2004EP1411554A1 Field-effect transistor constituting channel by carbon nano tubes
04/21/2004EP1411546A2 Improving nickel silicide - silicon nitride adhesion through surface passivation
04/21/2004EP1411146A2 Method of forming cobalt silicide film and method of manufacturing semiconductor device having cobalt silicide film
04/21/2004EP1410508A2 Low power operation mechanism and method
04/21/2004EP1410445A2 Gallium nitride based diodes with low forward voltage and low reverse current operation
04/21/2004EP1410444A2 INSULTING GATE A1GaN/GaN HEMT
04/21/2004EP1410443A2 Electronic component
04/21/2004EP1410442A1 Electronic component and method for producing an electronic component
04/21/2004EP1410429A2 Electromechanical memory array using nanotube ribbons and method for making same
04/21/2004EP1410428A1 Method of forming strained silicon on insulator (ssoi) and structures formed thereby
04/21/2004EP1410427A1 Epitaxial sio x? barrier/insulation layer----------------------
04/21/2004EP1410425A1 Topside active optical device apparatus and method
04/21/2004EP1410395A2 Pair wise programming method for dual cell eeprom
04/21/2004EP1410371A2 Active matrix display devices
04/21/2004EP1409237A2 Dual-cell soft programming for virtual-ground memory arrays
04/21/2004EP1408863A1 Hermetic feedthrough for an implantable device
04/21/2004EP0948816B1 Self-aligned non-volatile storage cell
04/21/2004CN2613051Y Tower-shaped high-power diode
04/21/2004CN1491484A In service programmable logic arrays with ultra thin vertical body transistors
04/21/2004CN1491442A Contact portion of semiconductor device and thin film transistor array panel for display device including the contact portion
04/21/2004CN1491441A Semiconductor device and its driving method
04/21/2004CN1491439A Multi-chip circuit module and method for producing the same
04/21/2004CN1491428A Flash memory with ultra thin vertical body transistors
04/21/2004CN1491417A Programmable fuse and antifuse and method thereof
04/21/2004CN1491406A Time-detection device and time-detection method by using semi-conductor element
04/21/2004CN1490888A High-efficiency high-brightness multiple active district tunnel reclaimed white light light emitting diodes
04/21/2004CN1490884A Coulomb island style rectifying monomolecular diode and preparation thereof
04/21/2004CN1490883A Thin-film semiconductor device and producing method thereof
04/21/2004CN1490882A Semiconductor device and producing method thereof
04/21/2004CN1490881A Enlaid gate multi-mesa MOS transistor and manufacture thereof
04/21/2004CN1490880A Nonvolatile memory with ferroelectric gate field effect transistor and manufacture thereof
04/21/2004CN1490876A Silicon memory for permanent silicon/oxide/nitride/silicon/nitride/oxide
04/21/2004CN1490873A Electrostatic charging protective circuit
04/21/2004CN1490872A Interconnection, interconnection forming method, thin-film transistor and displaying device
04/21/2004CN1490871A Semiconductor with column cap layer and manufacture thereof
04/21/2004CN1490845A Semiconductor device and producing method thereof
04/21/2004CN1490820A 半导体存储器件 The semiconductor memory device
04/21/2004CN1490819A Memory array with independent double nonvolatile memory and its making method
04/21/2004CN1490778A Electronic circuit, electronic device and instrument
04/21/2004CN1490162A Lnk jet recording head substrate, ink jet recording head and ink jet recorder
04/21/2004CN1147134C Display device compatible image sensor device
04/21/2004CN1147048C Threshold logic circuit needing miniature area
04/21/2004CN1147004C Method for manufacturing thin-film transistor
04/21/2004CN1147003C SOI semiconductor device and method for manufacturing the same
04/21/2004CN1147002C Semiconductor device and method for manufacturing the same
04/21/2004CN1147001C Ferroelectric memory transistor with resistively couple floating gate
04/21/2004CN1147000C Current-limiting semiconductor arrangement
04/21/2004CN1146996C Semiconductor device with logic circuit and memory circuit
04/21/2004CN1146992C Semiconductor device equipped with antifuse elements and method for manufacturing FPGA
04/21/2004CN1146972C Manufacture of transistor with raised drain on substrate
04/21/2004CN1146971C Making method of transistor
04/21/2004CN1146970C Semiconductor with MOS gate control structure
04/21/2004CN1146969C Lateral field effect transistor of sic, method for production thereof and use of such transistor
04/21/2004CN1146968C Method for fabricating MOS transistor
04/21/2004CN1146959C Process for producing semiconductor IC device
04/21/2004CN1146921C Programmable non-volatile bidirectional switch for programmable logic
04/20/2004US6724671 Nonvolatile semiconductor memory device and method for testing the same
04/20/2004US6724661 Erasing method in non-volatile memory device
04/20/2004US6724660 Integrated semiconductor memory device having quantum well buried in a substrate
04/20/2004US6724659 Nonvolatile semiconductor memory device
04/20/2004US6724657 Semiconductor device with improved latch arrangement
04/20/2004US6724655 Memory cell using negative differential resistance field effect transistors
04/20/2004US6724599 Power semiconductor device
04/20/2004US6724444 Liquid crystal display device
04/20/2004US6724088 Quantum conductive barrier for contact to shallow diffusion region
04/20/2004US6724085 Semiconductor device with reduced resistance plug wire for interconnection
04/20/2004US6724067 Low stress thermal and electrical interconnects for heterojunction bipolar transistors
04/20/2004US6724066 High breakdown voltage transistor and method
04/20/2004US6724065 Static random access memory and semiconductor device using MOS transistors having channel region electrically connected with gate
04/20/2004US6724062 Semiconductor energy detector
04/20/2004US6724058 Method for producing a filled recess in a material layer, and an integrated circuit configuration produced by the method
04/20/2004US6724057 Semiconductor device with reduced short circuiting between gate electrode and source/drain region
04/20/2004US6724056 Field-effect transistors with high-sensitivity gates
04/20/2004US6724053 PMOSFET device with localized nitrogen sidewall implantation
04/20/2004US6724051 Nickel silicide process using non-reactive spacer
04/20/2004US6724049 SOI semiconductor device with insulating film having different properties relative to the buried insulating film
04/20/2004US6724048 Body-tied silicon on insulator semiconductor device and method therefor
04/20/2004US6724047 Body contact silicon-on-insulator transistor and method
04/20/2004US6724046 Semiconductor device having patterned SOI structure and method for fabricating the same
04/20/2004US6724045 Semiconductor device and method of manufacturing the same
04/20/2004US6724044 MOSFET device having geometry that permits frequent body contact
04/20/2004US6724043 Bipolar MOSFET device
04/20/2004US6724042 Super-junction semiconductor device
04/20/2004US6724041 Method of making a high-voltage transistor with buried conduction regions
04/20/2004US6724040 Large current capacity and a high breakdown voltage, such as a mosfet, an igbt, a bipolar transistor, and semiconductor diode; drift region
04/20/2004US6724039 Semiconductor device having a Schottky diode
04/20/2004US6724038 Memory element for a semiconductor memory device
04/20/2004US6724037 Nonvolatile memory and semiconductor device
04/20/2004US6724035 Semiconductor memory with source/drain regions on walls of grooves
04/20/2004US6724032 Multi-bit non-volatile memory cell and method therefor
04/20/2004US6724031 Method for preventing strap-to-strap punch through in vertical DRAMs
04/20/2004US6724027 Magnetic shielding for MRAM devices
04/20/2004US6724025 MOSFET having high and low dielectric materials