Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
---|
04/27/2004 | US6727123 Method for manufacturing a thin-film transistor comprising a recombination center |
04/27/2004 | US6727122 Method of fabricating polysilicon thin film transistor |
04/27/2004 | US6727121 Method for crystallizing a silicon layer and fabricating a TFT using the same |
04/27/2004 | US6726955 Method of controlling the crystal structure of polycrystalline silicon |
04/27/2004 | US6726880 Device comprising support substrate, array of microlocations comprising electronically addressable electrodes, two collection electrodes adjacent to opposite sides of array, and flow cell adapted to be supported on substrate |
04/27/2004 | US6726768 Method of crystallizing amorphous silicon |
04/25/2004 | WO2004038805A1 Lateral short-channel dmos, method for manufacturing same and semiconductor device |
04/25/2004 | CA2458992A1 Lateral short-channel dmos, method of manufacturing the same, and semiconductor device |
04/22/2004 | WO2004034475A1 Plasma oscillation switching device |
04/22/2004 | WO2004034474A1 Semiconductor storage |
04/22/2004 | WO2004034473A2 Device integrated antenna for use in resonant and non-resonant modes and method |
04/22/2004 | WO2004034469A1 Magnetic storage device using ferromagnetic tunnel junction element |
04/22/2004 | WO2004034468A2 Flash memory array with increased coupling between floating and control gates |
04/22/2004 | WO2004034467A2 Sublithographic nanoscale memory architecture |
04/22/2004 | WO2004034458A1 Field effect transistor with local source/drain insulation and associated method of production |
04/22/2004 | WO2004034449A2 Transparent oxide semiconductor thin film transistors |
04/22/2004 | WO2004034441A2 Apparatus and method for assembling arrays of functional elements to substrates |
04/22/2004 | WO2004034426A2 Non-volatile memory device and method for forming |
04/22/2004 | WO2003106326A3 Micro-electro-mechanical system (mems) variable capacitor apparatuses and related methods |
04/22/2004 | WO2003098690A3 Soi-ldmos devices |
04/22/2004 | WO2003078301A3 Micro-electromechanical systems |
04/22/2004 | WO2003046948A3 Bipolar semiconductor device and method for production thereof |
04/22/2004 | WO2002080244A9 Improved process for deposition of semiconductor films |
04/22/2004 | WO2002071562A9 Quantum dot vertical cavity surface emitting laser |
04/22/2004 | US20040078415 Methods of factoring and modular arithmetic |
04/22/2004 | US20040078406 Methods of factoring and modular arithmetic |
04/22/2004 | US20040077305 Process for forming fast recovery diode with a single large area P/N junction |
04/22/2004 | US20040077185 Semiconductor device manufacturing method, heat treatment apparatus, and heat treatment method |
04/22/2004 | US20040077177 Dielectric materials |
04/22/2004 | US20040077164 Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry |
04/22/2004 | US20040077158 Method of manufacturing semiconductor device through salicide process |
04/22/2004 | US20040077155 Method for fabricating laminated silicon gate electrode |
04/22/2004 | US20040077153 Semiconductor substrate, SOI substrate and manufacturing method therefor |
04/22/2004 | US20040077152 Process for producing semiconductor device and semiconductor device produced thereby |
04/22/2004 | US20040077148 Methods of manufacturing transistors and transistors having an anti-punchthrough region |
04/22/2004 | US20040077147 Stacked gate flash memory device and method of fabricating the same |
04/22/2004 | US20040077146 Method for producing nonvolatile semiconductor memory device and the device itself |
04/22/2004 | US20040077145 Method of fabricating semiconductor device |
04/22/2004 | US20040077137 Capacitor of an integrated circuit device and method of manufacturing the same |
04/22/2004 | US20040077136 Integrated circuit metal oxide semiconductor transistor |
04/22/2004 | US20040077134 Manufacturing method for a semiconductor device and heat treatment method therefor |
04/22/2004 | US20040077133 Top gate thin-film transistor and method of producing the same |
04/22/2004 | US20040077132 Method of fabricating a thin film transistor using dual or multiple gates |
04/22/2004 | US20040077122 Process and device using self-organizable polymer |
04/22/2004 | US20040077108 Semiconductor device and method of manufacturing the same |
04/22/2004 | US20040077074 Multi-chambered analysis device |
04/22/2004 | US20040076894 Exposing the silicon layer to a laser beam through a mask having a phase shift layer; stripes having a first width separated by slits, and an overlapping blocking layer having stripes having a narrower width and parallel to the first |
04/22/2004 | US20040076072 Nonvolatile semiconductor memory device |
04/22/2004 | US20040076057 Method for reading out or in a status from or to a ferroelectrical transistor of a memory cell and memory matrix |
04/22/2004 | US20040076032 Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same |
04/22/2004 | US20040075783 Liquid crystal display and fabricating method thereof |
04/22/2004 | US20040075780 LCD array substrate and fabrication method thereof |
04/22/2004 | US20040075761 Solid-state imaging device and method of manufacturing the same |
04/22/2004 | US20040075529 High dopant conentration diffused resistor and method of manufacture therefor |
04/22/2004 | US20040075464 Nanostructures and methods for manufacturing the same |
04/22/2004 | US20040075447 Low cost ASIC architecture for safety critical applications monitoring an applied stimulus |
04/22/2004 | US20040075160 Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation |
04/22/2004 | US20040075156 Semiconductor devices having storage nodes and methods of manufacturing the same |
04/22/2004 | US20040075151 Semiconductor device structure including multiple fets having different spacer widths |
04/22/2004 | US20040075150 Reverse metal process for creating a metal silicide transistor gate structure |
04/22/2004 | US20040075146 SCR-ESD structures with shallow trench isolation |
04/22/2004 | US20040075143 CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same |
04/22/2004 | US20040075142 Semiconductor device |
04/22/2004 | US20040075141 Semiconductor device and method of manufacturing same |
04/22/2004 | US20040075139 Semiconductor device and fabrication method with etch stop film below active layer |
04/22/2004 | US20040075138 Semiconductor integrated circuit device and method of manufacturing the same |
04/22/2004 | US20040075137 Split gate flash memory device and method of fabricating the same |
04/22/2004 | US20040075136 Electrostatic discharge protection circuit |
04/22/2004 | US20040075135 Monolithcally integrated semiconductor component |
04/22/2004 | US20040075134 Stacked gate flash memory device and method of fabricating the same |
04/22/2004 | US20040075133 Semiconductor device and its manufacturing method |
04/22/2004 | US20040075132 Capacitor of an integrated circuit device and method of manufacturing the same |
04/22/2004 | US20040075130 Methods of forming electronic devices including dielectric layers with different densities of titanium and related structures |
04/22/2004 | US20040075129 Oxidation resistant microelectronic capacitor structure with l shaped isolation spacer |
04/22/2004 | US20040075126 Top electrode of an intermetallic, a ferroelectric thin film of a perovskite oxide, and a bottom electrode |
04/22/2004 | US20040075125 Magnetic random access memory |
04/22/2004 | US20040075124 Device using gelable self-organizable polymer |
04/22/2004 | US20040075123 Lateral flanks running parallel and perpendicular to the barriers defined by etching and formed by damascening |
04/22/2004 | US20040075122 Double and triple gate MOSFET devices and methods for making same |
04/22/2004 | US20040075121 Semiconductor device having a U-shaped gate structure |
04/22/2004 | US20040075120 Process and device using gelable composition |
04/22/2004 | US20040075118 Layers in substrate wafers |
04/22/2004 | US20040075116 Transistor array and method of layout |
04/22/2004 | US20040075114 Low leakage schottky diode |
04/22/2004 | US20040075113 Semiconductor equipment |
04/22/2004 | US20040075108 Bipolar transistor |
04/22/2004 | US20040075106 Manufacturing method for semiconductor substrate, semiconductor substrate and semiconductor device |
04/22/2004 | US20040075104 Semiconductor integrated circuit comprising sense amplifier activating circuit for activating sense amplifier circuit |
04/22/2004 | US20040075103 Semiconductor circuit, especially for ignition purposes, and the use of the same |
04/22/2004 | US20040075094 Semiconductor display device and manufacturing method thereof |
04/22/2004 | US20040075093 Organic semiconductor device and process of manufacturing the same |
04/22/2004 | US20040075092 Semiconductor device and method for manufacturing the same |
04/22/2004 | US20040075090 Modulation doped thyrisor and complementary transistors combination for a monolithic optoelectric integrated circuit |
04/22/2004 | US20040074881 Laser irradiation apparatus and method of manufacturing semiconductor device by using the laser irradiation apparatus |
04/22/2004 | US20040074301 Sensor structure and a silicon sensor. According to the method, into a single-crystal silicon wafer (10) is formed by etched opening at least one spring element configuration (7) and at least one seismic mass (8) connected to said spring |
04/22/2004 | DE10339920A1 Feldeffekttransistoren mit vielfach gestapelten Kanälen Field-effect transistors with multiple stacked channels |
04/22/2004 | DE10312238A1 Leistungshalbleitereinrichtung Power semiconductor device |
04/22/2004 | DE10311702A1 Transistorstrukturen mit getrennten Anti-Durchschlagspannungsschichten und Verfahren zur Herstellung derselben Transistor structures with separate anti-breakdown voltage layers and methods of making same |
04/22/2004 | DE10300759A1 High power switching combination formed from bipolar semiconductor and power field effect transistor, employs silicon-silicon bonding technology |
04/22/2004 | DE10292284T5 Nichtflüchtiger Halbleiterspeicher A non-volatile semiconductor memory |