Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143) |
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04/29/2004 | US20040079962 Impurities precipitation zone into silicone substrate; heat treatment; anisotropic etching, masking; sharp cone body |
04/29/2004 | US20040079961 Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices |
04/29/2004 | US20040079957 Power surface mount light emitting die package |
04/29/2004 | US20040079954 Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation |
04/29/2004 | US20040079952 Semiconductor device and method of fabricating the same |
04/29/2004 | US20040079944 Semiconductor device and manufacturing method for same |
04/29/2004 | US20040079943 Semiconductor device simulation method, semiconductor device and fabrication method thereof, circuit board, electro-optical apparatus, and electronic device |
04/29/2004 | US20040079941 Semiconductor apparatus and fabrication method of the same |
04/29/2004 | US20040079939 Photonic serial digital-to-analog converter employing a heterojunction thyristor device |
04/29/2004 | US20040079159 Micromechanical pressure sensor device and corresponding measurement system |
04/29/2004 | DE10296953T5 Doppelgatetransistor und Herstellungsverfahren Double-gate transistor and manufacturing method |
04/29/2004 | DE10296457T5 Leistungshalbleitervorrichtung mit einer Grabengateelektrode und Verfahren zum Herstellen derselben Power semiconductor device having a gate electrode grave and method for manufacturing the same |
04/29/2004 | DE10257203A1 Lastansteuerungsschaltung unter Verwendung einer Freilaufdiode Load driving circuit using a free-wheeling diode |
04/29/2004 | DE10246960A1 Field effect power transistor especially for motor vehicle uses has two semiconductor regions with channels and gates and overvoltage protection unit between gate and drain |
04/29/2004 | CA2498697A1 Tunneling-effect energy converters |
04/28/2004 | EP1414082A2 Doping of source-drain contacts |
04/28/2004 | EP1414078A1 Quantum supercapacitor |
04/28/2004 | EP1414072A2 Image sensor having large micro-lenses at the peripheral regions |
04/28/2004 | EP1414067A2 Wiring board, circuit board, electro-optical device and method for manufacturing the same, and electronic device |
04/28/2004 | EP1414062A2 Method of fabricating a thin film transistor using dual or multiple gates |
04/28/2004 | EP1412991A2 Solutions of organic semiconductors |
04/28/2004 | EP1412986A2 Fin field effect transistor and method for producing a fin field effect transistor |
04/28/2004 | EP1412985A1 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods |
04/28/2004 | EP1412984A2 Silicon nanoparticle electronic switches |
04/28/2004 | EP1412976A2 Boron-doped titanium nitride layer for high aspect ratio semiconductor devices |
04/28/2004 | EP1412973A1 Semiconductor structure comprising a magnetoresistor |
04/28/2004 | EP1412970A2 High voltage, high temperature capacitor structures and methods of fabricating same |
04/28/2004 | EP1412948A2 Magnetic memory unit and magnetic memory array |
04/28/2004 | EP1412720A1 Thin-film component and method for producing said thin-film component |
04/28/2004 | EP0879482B1 Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same |
04/28/2004 | EP0809860B1 Process for producing a LAYERED STRUCTURE WITH A SILICIDE LAYER |
04/28/2004 | CN2613888Y Emission area structure for semiconductor device |
04/28/2004 | CN1492515A MOS transistor and its producing method |
04/28/2004 | CN1492514A Semiconductor device and its producing method |
04/28/2004 | CN1492510A 半导体器件 Semiconductor devices |
04/28/2004 | CN1492483A Method for producing self assembling microstructure |
04/28/2004 | CN1492481A Single crystal silicon and SOI base board, semiconductor device and its producing method and display device |
04/28/2004 | CN1492477A Crystallizing device, crystallizing method and phase exchanging mechanism |
04/28/2004 | CN1492476A Method for producing silicon-germanium backing material on insulator and said substrate |
04/28/2004 | CN1492273A Liquid crystal display array substrate and its producing method |
04/28/2004 | CN1147935C Complementary double-load field effect transistor and chip system thereof |
04/28/2004 | CN1147934C Preparation process of silicide full-automatic aligned channel gate isolated gate bipolar transistor design |
04/28/2004 | CN1147922C Method for making thin-grid silicon oxide layer |
04/28/2004 | CN1147719C 半导体压力传感器 Semiconductor pressure sensor |
04/27/2004 | US6728135 Memory cell of the famos type having several programming logic levels |
04/27/2004 | US6727995 Gate oxide thickness measurement and control using scatterometry |
04/27/2004 | US6727875 High-definition liquid crystal display including sub scan circuit which separately controls plural pixels connected to the same main scan wiring line and the same sub scan wiring line |
04/27/2004 | US6727724 Characteristic evaluation apparatus for insulated gate type transistors |
04/27/2004 | US6727583 Semiconductor device |
04/27/2004 | US6727580 Microelectronic spring contact elements |
04/27/2004 | US6727572 Semiconductor device including high frequency circuit with inductor |
04/27/2004 | US6727568 Semiconductor device having a shallow trench isolation and method of fabricating the same |
04/27/2004 | US6727560 Engineered metal gate electrode |
04/27/2004 | US6727559 Compound semiconductor device |
04/27/2004 | US6727558 Channel isolation using dielectric isolation structures |
04/27/2004 | US6727553 Semiconductor device including SOI substrate |
04/27/2004 | US6727552 Semiconductor device and method of manufacturing the same |
04/27/2004 | US6727551 MOS semiconductor device and method of manufacturing the same |
04/27/2004 | US6727550 Integrated circuit device |
04/27/2004 | US6727547 Method and device for improving hot carrier reliability of an LDMOS transistor using drain ring over-drive bias |
04/27/2004 | US6727546 Self-aligned triple gate silicon-on-insulator (SOI) device |
04/27/2004 | US6727545 Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling |
04/27/2004 | US6727544 Semiconductor memory including cell(s) with both charge storage layer(s) and control gate laterally surrounding island-like semiconductor layer |
04/27/2004 | US6727543 Method for fabricating a memory structure having required scale spacers |
04/27/2004 | US6727540 Structure and method of fabricating embedded DRAM having a vertical device array and a bordered bitline contact |
04/27/2004 | US6727535 Ferroelectric varactor with built-in DC blocks |
04/27/2004 | US6727534 Electrically programmed MOS transistor source/drain series resistance |
04/27/2004 | US6727533 Semiconductor apparatus having a large-size bus connection |
04/27/2004 | US6727531 Indium gallium nitride channel high electron mobility transistors, and method of making the same |
04/27/2004 | US6727530 Integrated photodetector and heterojunction bipolar transistors |
04/27/2004 | US6727529 Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches |
04/27/2004 | US6727527 Reverse blocking IGBT |
04/27/2004 | US6727526 Thyristor with recovery time voltage surge resistance |
04/27/2004 | US6727525 Diode comprising a metal semiconductor contact and a method for the production thereof |
04/27/2004 | US6727524 P-n junction structure |
04/27/2004 | US6727522 Transparent channel layer of zinc oxide zno, zinc magnesium oxide or zinc cadmium oxide |
04/27/2004 | US6727514 Thin-film semiconductor integrated circuit device and picture display device with using thereof and manufacturing method thereof |
04/27/2004 | US6727193 Apparatus and methods for enhancing thermal performance of integrated circuit packages |
04/27/2004 | US6727188 Etchant and method for fabricating a substrate for an electronic device using the same wherein the substrate includes a copper or copper alloy film |
04/27/2004 | US6727186 Method for lateral etching with holes for making semiconductor devices |
04/27/2004 | US6727173 Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks |
04/27/2004 | US6727171 Diamond pn junction diode and method for the fabrication thereof |
04/27/2004 | US6727166 Removal of silicon oxynitride material using a wet chemical process after gate etch processing |
04/27/2004 | US6727153 Superlattice fabrication for InAs/GaSb/AlSb semiconductor structures |
04/27/2004 | US6727152 Semiconductor device |
04/27/2004 | US6727151 Method to fabricate elevated source/drain structures in MOS transistors |
04/27/2004 | US6727149 Method of making a hybrid SOI device that suppresses floating body effects |
04/27/2004 | US6727148 ULSI MOS with high dielectric constant gate insulator |
04/27/2004 | US6727146 Semiconductor device and method of manufacturing thereof |
04/27/2004 | US6727144 Manufacturing method for semiconductor storage device |
04/27/2004 | US6727142 Orientation independent oxidation of nitrided silicon |
04/27/2004 | US6727136 Formation of ultra-shallow depth source/drain extensions for MOS transistors |
04/27/2004 | US6727135 All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS |
04/27/2004 | US6727134 Method of forming a nitride gate dielectric layer for advanced CMOS devices |
04/27/2004 | US6727130 Method of forming a CMOS type semiconductor device having dual gates |
04/27/2004 | US6727129 Method for manufacturing a semiconductor device |
04/27/2004 | US6727128 Method of preparing polysilicon FET built on silicon carbide diode substrate |
04/27/2004 | US6727127 Laterally diffused MOS transistor (LDMOS) and method of making same |
04/27/2004 | US6727126 Masking member for forming fine electrode and manufacturing method therefor, method for forming electrode, and field effect transistor |
04/27/2004 | US6727124 Method of manufacturing a TFT using a catalytic element to promote crystallization of a semiconductor film and gettering the catalytic element |