Patents
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
05/2004
05/12/2004CN1149663C Process for producing barrier-free semiconductor storage assemblies
05/12/2004CN1149660C Integrated semiconductor device with nonvolatile floating grid memory and making method thereof
05/12/2004CN1149655C Method for making semiconductor device
05/12/2004CN1149648C Collector-up RF power transistor and its mfg. method
05/12/2004CN1149640C Semiconductor thin film and thin film device
05/12/2004CN1149639C Semiconductor device
05/12/2004CN1149638C Cubic crystal nitride semiconductor device and its mfg. method
05/12/2004CN1149632C Method for maing semiconductor device
05/12/2004CN1149579C Semiconductor memory device
05/12/2004CN1149430C Liquid crystal panel substrate, liquid crystal panel and electronic apparatus using the same
05/12/2004CN1149304C Method of coating and annealing large area glass substrates
05/11/2004US6735558 Characteristic extraction device, characteristic evaluation device, characteristic extraction method, characteristic evaluation method, recording medium and semiconductor device
05/11/2004US6735127 Method for driving a semiconductor memory
05/11/2004US6735123 Tunnel dielectric layer for data storage with greater thickness in central region; charge trapping layer; drain-to-source bias in presence of control gate field to induce hot electron injection
05/11/2004US6735118 CG-WL voltage boosting scheme for twin MONOS
05/11/2004US6734945 Liquid crystal display device
05/11/2004US6734940 Semiconductor device, electro-optical device substrate, liquid crystal device substrate and manufacturing method therefor, liquid crystal device, and projection liquid crystal display device and electronic apparatus using the liquid crystal device
05/11/2004US6734722 Method for reducing area in continuous-time filter for low frequency applications
05/11/2004US6734714 Integrated circuit with closely coupled high voltage output and offline transistor pair
05/11/2004US6734635 Process of crystallizing semiconductor thin film and laser irradiation system
05/11/2004US6734561 Comprises silicon oxynitride antireflective coating interposed between dielectric layers for etching prevention
05/11/2004US6734556 Semiconductor device with chip-on-chip construction joined via a low-melting point metal layer
05/11/2004US6734530 GaN-based compound semiconductor EPI-wafer and semiconductor element using the same
05/11/2004US6734528 Transistor with pi-gate structure and method for producing the same
05/11/2004US6734526 Oxidation resistant microelectronics capacitor structure with L shaped isolation spacer
05/11/2004US6734522 Transistor
05/11/2004US6734520 Semiconductor component and method of producing it
05/11/2004US6734510 Technique to mitigate short channel effects with vertical gate transistor with different gate materials
05/11/2004US6734508 Mask ROM, and fabrication method thereof
05/11/2004US6734507 Semiconductor device including memory cells and manufacturing method thereof
05/11/2004US6734506 Semiconductor device including a plurality of kinds of MOS transistors having different gate widths and method of manufacturing the same
05/11/2004US6734505 Thin film transistor and use of same
05/11/2004US6734501 Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance
05/11/2004US6734500 Semiconductor devices including a bi-polar transistor and a field effect transistor
05/11/2004US6734499 Operation method of semiconductor devices
05/11/2004US6734498 Insulated channel field effect transistor with an electric field terminal region
05/11/2004US6734497 Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device
05/11/2004US6734496 Semiconductor device
05/11/2004US6734495 Two terminal programmable MOS-gated current source
05/11/2004US6734494 Vertical field effect transistor
05/11/2004US6734493 Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer
05/11/2004US6734491 EEPROM with reduced manufacturing complexity
05/11/2004US6734490 Nonvolatile memory cell with high programming efficiency
05/11/2004US6734484 Vertical transistor DRAM structure and its manufacturing methods
05/11/2004US6734482 Trench buried bit line memory devices
05/11/2004US6734477 Fabricating an embedded ferroelectric memory cell
05/11/2004US6734476 Semiconductor devices having group III-V compound layers
05/11/2004US6734470 Laterally varying multiple diodes
05/11/2004US6734468 Devices related to electrode pads for p-type group III nitride compound semiconductors
05/11/2004US6734463 Semiconductor device comprising a window
05/11/2004US6734462 Silicon carbide power devices having increased voltage blocking capabilities
05/11/2004US6734461 SiC wafer, SiC semiconductor device, and production method of SiC wafer
05/11/2004US6734460 Active matrix substrate and method of fabricating the same
05/11/2004US6734119 Electro-optical apparatus and method for fabricating a film, semiconductor device and memory device at near atmospheric pressure
05/11/2004US6734114 Method for manufacturing semiconductor integrated circuit device
05/11/2004US6734113 Method for forming multiple gate oxide layers
05/11/2004US6734109 Method of building a CMOS structure on thin SOI with source/drain electrodes formed by in situ doped selective amorphous silicon
05/11/2004US6734105 Method for forming silicon quantum dots and method for fabricating nonvolatile memory device using the same
05/11/2004US6734086 Semiconductor integrated circuit device and method of manufacturing the same
05/11/2004US6734073 Method for manufacturing a bipolar junction transistor
05/11/2004US6734072 Method of fabricating a MOSFET device using a spike rapid thermal oxidation procedure
05/11/2004US6734070 Method of fabricating a semiconductor device with field-effect transistors having shallow source and drain junctions
05/11/2004US6734069 Method of forming a high dielectric constant insulating film and method of producing semiconductor device using the same
05/11/2004US6734068 Forming a layer of suboxide material comprising hafnium, zirconium, lanthanum, scandium or cerium silicates on a semiconductor substrate and forming a structure on the suboxide; transistors
05/11/2004US6734067 Method of forming a semiconductor storage device
05/11/2004US6734066 Method for fabricating split gate flash memory cell
05/11/2004US6734065 Method of forming a non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure
05/11/2004US6734058 Method for fabricating a semiconductor device
05/11/2004US6734055 Multi-level (4 state/2-bit) stacked gate flash memory cell
05/11/2004US6734052 Method of manufacturing thin film transistor
05/11/2004US6734050 Method of manufacturing a crystalline semiconductor film
05/11/2004US6734049 Array substrate for liquid crystal display device and the fabrication method of the same
05/11/2004US6734048 Thin film transistor liquid crystal display and fabrication method thereof
05/11/2004US6734040 Method of manufacturing semiconductor devices
05/11/2004US6734034 Transistor and associated driving device
05/11/2004US6734029 Method for forming conductive film pattern, and electro-optical device and electronic apparatus
05/11/2004US6733584 Method of forming crystalline silicon film
05/11/2004CA2319430C A method for generating electrical conducting or semiconducting structures in two or three dimensions, a method for erasing the same structures and an electric field generator/modulator for use with the method for generating
05/06/2004WO2004038812A1 Optoelectronic circuits employing one or more heterojunction thyristor devices
05/06/2004WO2004038808A2 Double and triple gate mosfet devices and methods for making same
05/06/2004WO2004038807A1 Mosfets incorporating nickel germanosilicided gate and methods of their formation
05/06/2004WO2004038806A1 Photodetector using mosfet with quantum channel and manufacturing method thereof
05/06/2004WO2004038804A2 Semiconductor device having a u-shaped gate structure
05/06/2004WO2004038800A2 Multilayered integrated circuit with non functional conductive traces
05/06/2004WO2004038793A1 Non-contact id card and the like and method for manufacturing same
05/06/2004WO2004038790A1 Pasted soi substrate, process for producing the same and semiconductor device
05/06/2004WO2004038785A1 Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor
05/06/2004WO2004038784A1 Automatically adjustable transistor and the production method thereof
05/06/2004WO2004038778A1 Gate material for semiconductor device fabrication
05/06/2004WO2004038775A1 Method of polycyrstallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor
05/06/2004WO2004038770A2 Integrated circuit arrangement comprising a capacitor, and production method
05/06/2004WO2004038767A2 Doped nanoscale wires and method of manufacture
05/06/2004WO2004038765A2 Optoelectronic clock generator and other optoelectronic devices and systems employing at least one heterojunction thyristor device
05/06/2004WO2004038764A2 Semiconductor device with quantum well and etch stop
05/06/2004WO2004038757A2 Transistor structures and methods for making the same
05/06/2004WO2004038726A1 Flash eeprom unit cell and memory array architecture including the same
05/06/2004WO2004027878A3 Quasi-vertical power semiconductor device on a composite substrate
05/06/2004WO2004027821A3 Ferroelectric transistor for storing two data bits
05/06/2004WO2004025712A3 Method for p-type doping wide band gap oxide semiconductors
05/06/2004WO2004019382A8 Tft sensor having improved imaging surface