Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
Patents for H01L 29 - Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. pn-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof (218,143)
07/2014
07/03/2014US20140183453 Field effect transistor having double transition metal dichalcogenide channels
07/03/2014US20140183452 Field effect transistor with channel core modified for a backgate bias and method of fabrication
07/03/2014US20140183451 Field effect transistor with channel core modified to reduce leakage current and method of fabrication
07/03/2014US20140183450 CATALYST FREE SYNTHESIS OF VERTICALLY ALIGNED CNTs ON SiNW ARRAYS
07/03/2014US20140183442 Engineered substrate assemblies with epitaxial templates and related systems, methods, and devices
07/03/2014US20140183439 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
07/03/2014US20140183434 Variable resistance memory devices and methods of forming the same
07/03/2014US20140183177 Semiconductor device and method for driving the same
07/03/2014DE112012004406T5 Halbleitereinrichtung und Verfahren zum Herstellen derselben A semiconductor device and method of manufacturing the same
07/03/2014DE112012004307T5 Halbleitervorrichtung Semiconductor device
07/03/2014DE112012004076T5 Halbleitervorrichtung Semiconductor device
07/03/2014DE112012003576T5 Halbleitervorrichtung Semiconductor device
07/03/2014DE102013227069A1 Metalloxidhalbleitereinrichtungen und herstellungsverfahren Metalloxidhalbleitereinrichtungen and manufacturing processes
07/03/2014DE102013226794A1 Halbleitervorrichtung und deren Herstellungsverfahren A semiconductor device and its manufacturing method
07/03/2014DE102013114842A1 Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
07/03/2014DE102013112831A1 Ladungskompensations-Halbleiterbauelement Charge compensation semiconductor component
07/03/2014DE102012209512B4 Metall-Gate-Stapelbildung in Austausch-Gate-Technologie Metal gate stack formation in exchange gate technology
07/03/2014DE102010042998B4 Siliciumcarbid-Halbleitervorrichtung Silicon carbide semiconductor device
07/03/2014DE102009059304B4 Siliziumchip mit einem daran befestigten Kabel und Verfahen zur Befestigung des Kabels Silicon chip with a cable and attached thereto Procedure for attachment of the cable
07/03/2014DE102008007029B4 Betrieb einer elektronischen Schaltung mit körpergesteuertem Doppelkanaltransistor und SRAM-Zelle mit körpergesteuertem Doppelkanaltransistor Operating an electronic circuit with körpergesteuertem double channel transistor and SRAM cell with double channel transistor körpergesteuertem
07/03/2014DE102007050868B4 Leistungshalbleitervorrichtung Power semiconductor device
07/03/2014DE102006062821B4 Verfahren zur Fertigung einer Halbleitervorrichtung A method of manufacturing a semiconductor device
07/03/2014DE102005060641B4 Halbleiterdrucksensor Semiconductor pressure sensor
07/02/2014EP2750199A2 Semiconductor device and method for manufacturing the same
07/02/2014EP2750198A1 SiC SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF
07/02/2014EP2750197A2 Thin film transistor, thin film transistor array panel including the same and manufacturing method thereof
07/02/2014EP2750180A2 Integrated circuit including a clock tree cell
07/02/2014EP2750179A2 Integrated circuit including a clock tree cell
07/02/2014EP2750171A1 Silicon carbide semiconductor device and method for manufacturing same
07/02/2014EP2750170A1 Method for forming spacers of a transistor gate
07/02/2014EP2748857A1 Method for producing high-performing and electrically stable semi-conductive metal oxide layers, layers produced according to the method and use thereof
07/02/2014EP2748856A2 Semiconductor device structures including vertical transistor devices, arrays of vertical transistor devices, and methods of fabrication
07/02/2014EP2748855A1 Field effect power transistors
07/02/2014EP2748574A1 Silicide gap thin film transistor
07/02/2014CN203690309U 双向tvs二极管 Bidirectional diode tvs
07/02/2014CN203690308U 薄膜晶体管、阵列基板和显示装置 Thin film transistor array substrate and a display device
07/02/2014CN203690307U 阵列基板和显示装置 Array substrate and a display device
07/02/2014CN203690306U 半导体器件及半导体器件结构 Semiconductor device and semiconductor device structure
07/02/2014CN203690305U 半导体器件及半导体器件结构 Semiconductor device and semiconductor device structure
07/02/2014CN203690304U 纵向超结金属氧化物场效应晶体管 Vertical super-junction metal-oxide field effect transistor
07/02/2014CN203690303U 电子器件 Electronic devices
07/02/2014CN203690282U 一种新型的绝缘拉带式晶闸管装置 A new insulated drawstring thyristor device
07/02/2014CN103907195A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/02/2014CN103907194A 用于高性能射频应用的传输线 Applications for high-performance RF transmission line
07/02/2014CN103907193A 碳化硅半导体器件及其制造方法 Silicon carbide semiconductor device and manufacturing method thereof
07/02/2014CN103907192A 具有合金化电极的电阻切换器件及其形成方法 Resistance switching device has alloyed electrode and method of forming
07/02/2014CN103907191A 具有应力增强的可调触发电压的可控硅整流器 Adjustable enhanced with a stress trigger voltage of the thyristor
07/02/2014CN103907178A 有机半导体元件的制造方法、有机半导体元件、有机单晶体薄膜的成长方法、有机单晶体薄膜、电子设备及有机单晶体薄膜组 Method for producing organic semiconductor element, an organic semiconductor element, a single crystal growth method of the organic thin film, an organic thin film single crystal, single crystal thin film electronic device and the organic group
07/02/2014CN103907176A 制造半导体器件的方法 The method of manufacturing a semiconductor device
07/02/2014CN103904137A Mos电容及其制作方法 Mos capacitor and manufacturing method thereof
07/02/2014CN103904136A 变容器 Varactors
07/02/2014CN103904135A 肖特基二极管及其制造方法 Schottky diode and its manufacturing method
07/02/2014CN103904134A 基于GaN基异质结构的二极管结构及制作方法 Based diode structure and method of making GaN-based heterostructures
07/02/2014CN103904133A 平衡正向压降和反向漏电流的肖特基二极管及制备方法 Balance forward voltage drop and reverse leakage current of the Schottky diode and preparation method
07/02/2014CN103904132A 一种调节硅化钛/硅肖特基接触势垒的方法 A titanium silicide / Si Schottky barrier contact method of adjusting
07/02/2014CN103904131A 肖特基势垒二极管及其制造方法 Schottky barrier diode and its manufacturing method
07/02/2014CN103904130A 一种薄膜晶体管和阵列基板 A thin film transistor array substrate and
07/02/2014CN103904129A 薄膜晶体管结构 Thin-film transistor structure
07/02/2014CN103904128A 薄膜晶体管结构 Thin-film transistor structure
07/02/2014CN103904127A 薄膜晶体管 Thin film transistor
07/02/2014CN103904126A 薄膜晶体管 Thin film transistor
07/02/2014CN103904125A 薄膜晶体管 Thin film transistor
07/02/2014CN103904124A 具有u型延伸栅的soi槽型ldmos器件 Soi Groove ldmos device with u-type extension gate
07/02/2014CN103904123A 一种有效减小导通电阻的薄栅氧n型ldmos结构 An effective to reduce the on-resistance of the thin gate oxide n-type structure ldmos
07/02/2014CN103904122A 一种鳍型半导体结构及其成型方法 One kind of fin-type semiconductor structure and method of forming
07/02/2014CN103904121A 一种横向高压器件及其制造方法 A widthwise high pressure device and manufacturing method
07/02/2014CN103904120A 一种具有网状外延结构的超结mosfet A kind of super-junction structure mosfet network extension
07/02/2014CN103904119A 一种具有纵向屏蔽栅的Trench MOSFET及其加工方法 Having a longitudinal shield gate Trench MOSFET and method of processing
07/02/2014CN103904118A 具有存储器功能的场效应晶体管及其三维集成方法 The field effect transistor having a memory function and three-dimensional integrated approach
07/02/2014CN103904117A 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/02/2014CN103904116A 金属氧化物半导体器件和制作方法 Metal oxide semiconductor device and manufacturing method
07/02/2014CN103904115A 具有埋设的金属硅化物层的半导体器件及其制造方法 A semiconductor device and a manufacturing method of the buried metal silicide layer
07/02/2014CN103904114A 加源场板增强型AlGaN/GaN HEMT器件结构及其制作方法 Plus enhanced source field plate AlGaN / GaN HEMT device structure and fabrication method thereof
07/02/2014CN103904113A 加栅场板耗尽型AlGaN/GaN HEMT器件结构及其制作方法 Plus gate field plate depletion mode AlGaN / GaN HEMT device structure and fabrication method thereof
07/02/2014CN103904112A 耗尽型绝缘栅AlGaN/GaN器件结构及其制作方法 Depletion mode insulated gate AlGaN / GaN device structure and fabrication method thereof
07/02/2014CN103904111A 基于增强型AlGaN/GaN HEMT器件结构及其制作方法 Based on Enhanced AlGaN / GaN HEMT device structure and fabrication method thereof
07/02/2014CN103904110A 加栅场板耗尽型绝缘栅AlGaN/GaN器件结构及其制作方法 Plus gate depletion mode insulated gate field plate AlGaN / GaN device structure and fabrication method thereof
07/02/2014CN103904109A 半导体器件以及用于制造半导体器件的方法 A semiconductor device and a method for manufacturing a semiconductor device
07/02/2014CN103904108A 具有石墨烯电极的GaN基半导体器件及其制备方法 GaN-based semiconductor device and a method for preparing an electrode having a graphene
07/02/2014CN103904107A 半导体装置和制造半导体装置的方法 The method of manufacturing a semiconductor device and a semiconductor device
07/02/2014CN103904106A 一种超势垒整流器器件结构 A super barrier rectifier device structure
07/02/2014CN103904088A 半导体装置及半导体装置的制造方法 Semiconductor device and manufacturing method of a semiconductor device
07/02/2014CN103904078A 高电压接面场效晶体管结构 High voltage junction field effect transistor structure
07/02/2014CN103904032A 闪存存储单元及其制备方法 Flash memory cell and its preparation method
07/02/2014CN103904028A 一种半导体结构及其制造方法 A semiconductor structure and its manufacturing method
07/02/2014CN103903988A 氧化物半导体制造方法及薄膜晶体管制造方法 The method of manufacturing an oxide semiconductor thin film transistor and method of manufacturing
07/02/2014CN103903968A 一种半导体器件及其制造方法 A semiconductor device and manufacturing method thereof
07/02/2014CN103903965A 用于半导体元件的超接面结构及其制程 Super junction structure and process for semiconductor device
07/02/2014CN103033276B 碳化硅温度传感器及其制造方法 Silicon carbide and method of manufacturing the temperature sensor
07/02/2014CN102792170B 物理量传感器 Physical sensors
07/02/2014CN102655175B Tft、阵列基板及显示装置、制备该tft的掩模板 Tft, the array substrate and a display device, the mask preparation of the tft
07/02/2014CN102623505B 基于垂直双栅的抗辐照晶体管的制备方法 Preparation based anti-radiation vertical double-gate transistors
07/02/2014CN102574806B 苝四甲酰二亚胺衍生物 Derivatives of perylene tetracarboxylic diimide
07/02/2014CN102569392B Ldmos晶体管、布局方法和制作方法 Ldmos transistors, layout methods and production methods
07/02/2014CN102479814B 晶体管及其制作方法 Transistor and manufacturing method thereof
07/02/2014CN102456690B 半导体器件及其制造方法 Semiconductor device and manufacturing method thereof
07/02/2014CN102376358B 电子系统、反熔丝记忆体元件及其提供方法 Electronic systems, anti-fuse memory device and provides methods
07/02/2014CN102347367B 一种基于部分耗尽型soi工艺的抗辐射mos器件结构 A part of the anti-radiation mos depletion mode device structures based on soi technology
07/02/2014CN102339863B 半导体装置 Semiconductor device
07/02/2014CN102236188B 栅极驱动方法、电路及液晶显示面板 The gate driving method, a circuit and a liquid crystal display panel
1 ... 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 ... 2182