| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 04/03/2013 | CN103021868A Method for manufacturing stacked gate type flash memory |
| 04/03/2013 | CN103021867A Trench metal-oxide-semiconductor barrier Schottky forming method |
| 04/03/2013 | CN103021866A Preparation technology of single mask self assembly indium tin oxide (ITO) thin film transistor of bottom grid structure |
| 04/03/2013 | CN103021865A Method for manufacturing metal silicide thin film and ultra-shallow junction and semiconductor device |
| 04/03/2013 | CN103021864A Silicon On Insulator (SOI) Reduced Surface Field (RESURF) superjunction device structure and production method thereof |
| 04/03/2013 | CN103021863A Manufacturing methods for accurately aligned and self-balanced superjunction devices |
| 04/03/2013 | CN103021862A Metal gate device with low temperature oxygen scavenging |
| 04/03/2013 | CN103021861A Method for forming semiconductor device |
| 04/03/2013 | CN103021860A Trench transistor |
| 04/03/2013 | CN103021859A Fabricating method of transistor |
| 04/03/2013 | CN103021858A Power MOS (Metal Oxide Semiconductor) transistor device with low on resistance and preparation method thereof |
| 04/03/2013 | CN103021857A Manufacturing method of multi-grid field effect transistor |
| 04/03/2013 | CN103021856A Method for forming semiconductor structure with super junctions and semiconductor structure |
| 04/03/2013 | CN103021855A Separate gate flash memory active region manufacturing method |
| 04/03/2013 | CN103021854A Method for manufacturing fin type field effect transistor and semiconductor structure formed by fin type field effect transistor |
| 04/03/2013 | CN103021853A Method for processing semiconductor device and semiconductor device |
| 04/03/2013 | CN103021852A Method for manufacturing high-voltage P type LDMOS |
| 04/03/2013 | CN103021851A Preparation method of multi-grid-electrode field effect transistor |
| 04/03/2013 | CN103021850A Semiconductor structure and manufacturing method thereof |
| 04/03/2013 | CN103021849A N-channel metal oxide semiconductor (NMOS) component manufacturing method using stress memorization technology |
| 04/03/2013 | CN103021848A Germanium silicon heterojunction tunneling field-effect transistor field-effect transistor and preparation method thereof |
| 04/03/2013 | CN103021847A Method for realizing gallium-arsenic-antimony double-heterojunction bipolar transistor base electrode metallization |
| 04/03/2013 | CN103021846A Manufacturing method for triode opening |
| 04/03/2013 | CN103021845A Microwave processing apparatus and method for processing object to be processed |
| 04/03/2013 | CN103021844A Epitaxial wafer annealing method |
| 04/03/2013 | CN103021843A Improved method of bipolar integrated circuit amplification coefficient process |
| 04/03/2013 | CN103021842A Back seal process for achieving high-speed SiO2 film sedimentation on monocrystalline silicon wafer |
| 04/03/2013 | CN103021841A Treatment method for removing SixNy residue |
| 04/03/2013 | CN103021840A Method for preventing over etching of passivation layers |
| 04/03/2013 | CN103021839A Method for improving adhesive force of nitrogen-free medium antireflection coating film and photoresist |
| 04/03/2013 | CN103021838A Amorphous carbon processing method and etching method by adopting amorphous carbon as hard mask |
| 04/03/2013 | CN103021837A Method of processing and forming amorphous carbon layer and production method of semiconductor device |
| 04/03/2013 | CN103021836A Method for fabricating integrated circuit with reducted plasma damage |
| 04/03/2013 | CN103021835A Method for forming inclined sidewall by dry etching of GaN-based material |
| 04/03/2013 | CN103021834A Etching method, etching apparatus, and storage medium |
| 04/03/2013 | CN103021833A Method for reducing concentration of residual impurities on surface of substrate |
| 04/03/2013 | CN103021832A Processing technology of appearance improvement of silicon wafer corroded surface through alkali corrosion |
| 04/03/2013 | CN103021831A Processing method of monocrystalline silicon corrosion piece with long minority carrier service life |
| 04/03/2013 | CN103021830A 晶片加工方法 Wafer processing method |
| 04/03/2013 | CN103021829A Silicon nitride etching in a single wafer apparatus |
| 04/03/2013 | CN103021828A Method for producing an electrode structure |
| 04/03/2013 | CN103021827A Method for forming finned field effect transistor and complementary metal oxide semiconductor (CMOS) finned field effect transistor |
| 04/03/2013 | CN103021826A 激光退火装置及激光退火方法 Laser annealing apparatus and a laser annealing method |
| 04/03/2013 | CN103021825A Manufacturing method of thin film transistor |
| 04/03/2013 | CN103021824A Method for injecting polysilicon gate in CMOS (complementary metal-oxide-semiconductor transistor) source leak doping |
| 04/03/2013 | CN103021823A Non-vacuum stepping pass-type rapid selenizing device and selenizing method implemented by same |
| 04/03/2013 | CN103021822A Method for preparing multilayer film by using aluminum zinc oxide target material |
| 04/03/2013 | CN103021821A Metal or semiconductor structure on flexible substrate and annealing method of metal or semiconductor |
| 04/03/2013 | CN103021820A Method of fabricating a thin film transistor and method of fabricating an organic light-emitting display device |
| 04/03/2013 | CN103021819A Method for forming semiconductor structure with reduced line edge roughness |
| 04/03/2013 | CN103021818A Conformal microstructure transfer method |
| 04/03/2013 | CN103021817A Method of cleaning after wet etching |
| 04/03/2013 | CN103021816A Polyresistor structure, method for manufacturing same and polyresistor |
| 04/03/2013 | CN103021815A Hybrid coplanar substrate structure and preparation method thereof |
| 04/03/2013 | CN103021814A Method for preparing epitaxial composite substrate of gallium nitride based semiconducting material |
| 04/03/2013 | CN103021813A MIM (metal-insulator-metal) capacitor and manufacturing method thereof |
| 04/03/2013 | CN103021812A Method for preparing III-VOI structure |
| 04/03/2013 | CN103021811A Wet etching process |
| 04/03/2013 | CN103021810A Method for cleaning substrate |
| 04/03/2013 | CN103021809A Drop type method for removing silicon dioxide on edge of silicon wafer |
| 04/03/2013 | CN103021808A Method for preparing graphene image with specific edge |
| 04/03/2013 | CN103021807A 晶片粘合方法 Wafer bonding method |
| 04/03/2013 | CN103021806A Method for preparing silicon nanowire on monocrystalline silicon substrate |
| 04/03/2013 | CN103021805A Method and system for forming chalcogenide semiconductor materials using sputtering and evaporation functions |
| 04/03/2013 | CN103021804A Forming a protective film on a back side of a silicon wafer in a III-V family fabrication process |
| 04/03/2013 | CN103021803A Method for protecting thick metal layer photoetching alignment mark |
| 04/03/2013 | CN103021802A Production method for detection sample of semiconductor device, and detection sample |
| 04/03/2013 | CN103021801A Oxygen-doped semi-insulating polycrystalline silicon membrane and manufacturing method thereof |
| 04/03/2013 | CN103021800A Controlled transverse etching method |
| 04/03/2013 | CN103021783A Etching method of semiconductor structure |
| 04/03/2013 | CN103021778A Airflow balancing plate, chamber device and substrate processing device |
| 04/03/2013 | CN103021777A Ion implantation method and device |
| 04/03/2013 | CN103021609A Method for designing large-scale thick-film resistor network |
| 04/03/2013 | CN103019049A Stripping agent containing alkylamide mixture |
| 04/03/2013 | CN103019045A Silicon wafer platform with anti-collision function |
| 04/03/2013 | CN103019039A Reticle for exposure, exposure method and production method of semiconductor wafer |
| 04/03/2013 | CN103018991A Array substrate, manufacturing method thereof and display device |
| 04/03/2013 | CN103018990A Array substrate, preparation method of array substrate and liquid crystal display device |
| 04/03/2013 | CN103018989A Array base plate, manufacturing method thereof and liquid crystal display device |
| 04/03/2013 | CN103018988A TFT-LCD (thin film transistor-liquid crystal display) array substrate, manufacturing method thereof and display device |
| 04/03/2013 | CN103018986A Array baseplate and preparation and driving methods thereof, and liquid crystal display panel |
| 04/03/2013 | CN103018977A Array substrate and manufacture method thereof |
| 04/03/2013 | CN103018974A Liquid crystal display device, polysilicon array substrate and manufacturing method |
| 04/03/2013 | CN103014866A Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device |
| 04/03/2013 | CN103014656A Nickel silicide layer forming method and semiconductor device forming method |
| 04/03/2013 | CN103013523A Etching agent as well as preparation method and application thereof |
| 04/03/2013 | CN103013365A Belt for wafer processing |
| 04/03/2013 | CN103012457A Halogenated organoaminosilane precursors and methods for depositing films comprising same |
| 04/03/2013 | CN103009385A Robot hand and robot |
| 04/03/2013 | CN103009382A Transfer robot and substrate processing apparatus |
| 04/03/2013 | CN103009222A Wax-free polishing process of heavily-doped polished silicon wafer with high local flatness |
| 04/03/2013 | CN103009206A Manufacturing method for ultrathin and ultrasmall high-precision glass substrate |
| 04/03/2013 | CN103008298A In-situ backside cleaning of semiconductor substrate |
| 04/03/2013 | CN103008281A Cleaning tank used for cleaning semiconductor wafers |
| 04/03/2013 | CN103008175A Coating apparatus and coating method |
| 04/03/2013 | CN102437196B Low-temperature polycrystalline silicon thin-film transistor and manufacturing method thereof |
| 04/03/2013 | CN102437113B Repairing method of signal disconnection of active matrix organic light-emitting display array substrate |
| 04/03/2013 | CN102437112B Method for repairing pixel circuit of active matrix organic light emitting display substrate |
| 04/03/2013 | CN102403209B Preparation method for ohmic contact electrode based on diamond film field effect transistor |
| 04/03/2013 | CN102376613B Thimble module of integrated circuit die bonder |