Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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02/24/1987 | US4645218 Electrostatic chuck |
02/24/1987 | US4645118 Method and means for threading wire bonding machines |
02/24/1987 | US4645116 Coating substrate with bonding material; reducing |
02/24/1987 | US4644639 Method of supporting an article |
02/24/1987 | US4644637 Method of making an insulated-gate semiconductor device with improved shorting region |
02/24/1987 | CA1218470A1 Semiconductor device with polycrystalline silicon active region and ic including semiconductor device |
02/24/1987 | CA1218468A1 Method of screen printing conductive elements |
02/24/1987 | CA1218431A1 Connector |
02/19/1987 | EP0123676A4 Electronic circuit chip connection assembly and method. |
02/18/1987 | CN86105121A X-ray source |
02/18/1987 | CN86103233A Plasma etching of silicon using fluorinated gas mixtures |
02/17/1987 | USRE32351 Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer |
02/17/1987 | US4644572 Fill and spill for charge input to a CCD |
02/17/1987 | US4644445 Resin mounting structure for an integrated circuit |
02/17/1987 | US4644404 Solid-state image pickup device and manufacturing method thereof |
02/17/1987 | US4644386 Integrated circuit employing insulated gate electrostatic induction transistor |
02/17/1987 | US4644384 Apparatus and method for packaging eprom integrated circuits |
02/17/1987 | US4644382 Prediffused integrated circuit and a method of interconnection of the cells of said circuit |
02/17/1987 | US4644381 I2 L heterostructure bipolar transistors and method of making the same |
02/17/1987 | US4644265 Noise reduction during testing of integrated circuit chips |
02/17/1987 | US4644264 Photon assisted tunneling testing of passivated integrated circuits |
02/17/1987 | US4644187 Gate array basic cell |
02/17/1987 | US4644172 Electronic control of an automatic wafer inspection system |
02/17/1987 | US4644170 Method of electron beam exposure |
02/17/1987 | US4644093 Circuit board |
02/17/1987 | US4643950 Aluminum nitride dielectric interlayer |
02/17/1987 | US4643935 Stacks laminated by prepreg layers between |
02/17/1987 | US4643914 Process and apparatus for the growth of films of silicides of refractory metals and films obtained by this process |
02/17/1987 | US4643913 Process for producing solar cells |
02/17/1987 | US4643804 Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices |
02/17/1987 | US4643799 Method of dry etching |
02/17/1987 | US4643796 Moly mask removal tool |
02/17/1987 | US4643777 Forming metal silicides |
02/17/1987 | US4643774 Immersion in liquid and oscillation |
02/17/1987 | US4643629 Automatic loader |
02/17/1987 | US4643627 Vacuum transfer device |
02/17/1987 | US4643527 Process for the production of a substrate for an electrically controlled device and display screen produced from such a substrate |
02/17/1987 | US4642883 Semiconductor bipolar integrated circuit device and method for fabrication thereof |
02/17/1987 | US4642881 Method of manufacturing nonvolatile semiconductor memory device by forming additional impurity doped region under the floating gate |
02/17/1987 | US4642880 Method for manufacturing a recessed semiconductor device |
02/17/1987 | US4642879 Forming aluminum nitride layer, doping and heat treatment |
02/17/1987 | US4642878 Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions |
02/17/1987 | US4642877 Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices |
02/17/1987 | CA1218151A1 Semiconductor memory |
02/17/1987 | CA1218135A1 Aluminum plate with electroplated metal laminate in contact with silicon for solar cell |
02/12/1987 | WO1987000969A1 Three-level interconnection scheme for integrated circuits |
02/12/1987 | WO1987000968A1 Positioning table |
02/12/1987 | WO1987000967A1 Dielectric breakdown prevention technique |
02/12/1987 | WO1987000966A1 Control of uniformity of growing alloy film |
02/12/1987 | WO1987000965A1 Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources |
02/12/1987 | DE3625860A1 Semiconductor device having a contact and device for producing it |
02/12/1987 | DE3625819A1 Method and device for contactlessly measuring the resistivity of semiconductor wafers |
02/11/1987 | CN86105604A Circuit arrangment for testing integrated circuit components |
02/11/1987 | CN86105249A Semiconductor device and its manufacture |
02/11/1987 | CN86102476A Method of reducing tube leakage and surface leakage of bi-polar device |
02/10/1987 | US4642784 Integrated circuit manufacture |
02/10/1987 | US4642674 Field effect semiconductor device having improved voltage breakdown characteristics |
02/10/1987 | US4642673 Floating gate type EEPROM with a substrate region used for the control gate |
02/10/1987 | US4642672 Semiconductor device having registration mark for electron beam exposure |
02/10/1987 | US4642668 Semiconductor device having improved thermal characteristics |
02/10/1987 | US4642667 Integrated circuits |
02/10/1987 | US4642665 Vertically layered MOMOM tunnel device |
02/10/1987 | US4642566 Method for the registration and representation of signals in the interior of integrated circuits by considering edge steepness and apparatus for implementing the method |
02/10/1987 | US4642487 Special interconnect for configurable logic array |
02/10/1987 | US4642438 Workpiece mounting and clamping system having submicron positioning repeatability |
02/10/1987 | US4642282 Light-sensitive positive copying material with alkali soluble polycondensation binder |
02/10/1987 | US4642259 Gallium arsenide filed effect transistor |
02/10/1987 | US4642243 Electrode ionization |
02/10/1987 | US4642171 Phototreating apparatus |
02/10/1987 | US4642168 Electrolytic etching |
02/10/1987 | US4642162 Spin coating photoresist, etching, bias sputter deposition, uniform thickness |
02/10/1987 | US4642148 Reduced residual carbon |
02/10/1987 | US4642144 Transferring electrons, increasing electroconductivity |
02/10/1987 | US4642142 Mercury vapor |
02/10/1987 | US4642140 Reacting metal base layer with acidic ions |
02/10/1987 | US4641738 Momentum arresting device for an integrated circuit tester |
02/10/1987 | US4641603 Epitaxial growing apparatus |
02/10/1987 | US4641420 Forming a smoothing region on sidewalls of aperture |
02/10/1987 | US4641419 Fabricating an integrated circuit device having a vertical pnp transistor |
02/10/1987 | US4641418 Molding process for semiconductor devices and lead frame structure therefor |
02/10/1987 | US4641417 Encapsulation of gate electrode |
02/10/1987 | US4641416 Method of making an integrated circuit structure with self-aligned oxidation to isolate extrinsic base from emitter |
02/10/1987 | CA1217880A Process for diffusing impurities into a semiconductor body |
02/10/1987 | CA1217879A Integrated circuits employing proton-bombarded algaas layers |
02/10/1987 | CA1217878A Integrated circuits employing ion-bombarded inp layers |
02/10/1987 | CA1217877A Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment |
02/10/1987 | CA1217876A Semiconductor device and a method for fabricating the same |
02/10/1987 | CA1217828A Cmos cell array with transistor isolation |
02/10/1987 | CA1217784A Porous semiconductor dopant carriers |
02/10/1987 | CA1217686A Metallization of ceramics |
02/05/1987 | DE3526485A1 Schaltungsanordnung zum pruefen integrierter schaltungseinheiten Circuitry for testing integrated circuit units |
02/04/1987 | EP0210858A2 Reactive ion etching deposition apparatus and method of using it |
02/04/1987 | EP0210809A1 Nonvolatile electrically alterable memory and method |
02/04/1987 | EP0210631A2 Method and apparatus for charged particle beam exposure |
02/04/1987 | EP0210625A2 Low capacitance amorphous silicon field effect transistor structure |
02/04/1987 | EP0210605A2 Plasma processing method and apparatus |
02/04/1987 | EP0210578A2 System and method for depositing an electrical insulator in a continuous process |
02/04/1987 | EP0210502A1 Method for removal of carbonaceous residues from ceramic structure having internal metallurgy |
02/04/1987 | EP0210476A1 Bubbler cylinder device |
02/04/1987 | EP0210439A1 Method for growing single crystals of dissociative compound semiconductor |