Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/1987
02/24/1987US4645218 Electrostatic chuck
02/24/1987US4645118 Method and means for threading wire bonding machines
02/24/1987US4645116 Coating substrate with bonding material; reducing
02/24/1987US4644639 Method of supporting an article
02/24/1987US4644637 Method of making an insulated-gate semiconductor device with improved shorting region
02/24/1987CA1218470A1 Semiconductor device with polycrystalline silicon active region and ic including semiconductor device
02/24/1987CA1218468A1 Method of screen printing conductive elements
02/24/1987CA1218431A1 Connector
02/19/1987EP0123676A4 Electronic circuit chip connection assembly and method.
02/18/1987CN86105121A X-ray source
02/18/1987CN86103233A Plasma etching of silicon using fluorinated gas mixtures
02/17/1987USRE32351 Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
02/17/1987US4644572 Fill and spill for charge input to a CCD
02/17/1987US4644445 Resin mounting structure for an integrated circuit
02/17/1987US4644404 Solid-state image pickup device and manufacturing method thereof
02/17/1987US4644386 Integrated circuit employing insulated gate electrostatic induction transistor
02/17/1987US4644384 Apparatus and method for packaging eprom integrated circuits
02/17/1987US4644382 Prediffused integrated circuit and a method of interconnection of the cells of said circuit
02/17/1987US4644381 I2 L heterostructure bipolar transistors and method of making the same
02/17/1987US4644265 Noise reduction during testing of integrated circuit chips
02/17/1987US4644264 Photon assisted tunneling testing of passivated integrated circuits
02/17/1987US4644187 Gate array basic cell
02/17/1987US4644172 Electronic control of an automatic wafer inspection system
02/17/1987US4644170 Method of electron beam exposure
02/17/1987US4644093 Circuit board
02/17/1987US4643950 Aluminum nitride dielectric interlayer
02/17/1987US4643935 Stacks laminated by prepreg layers between
02/17/1987US4643914 Process and apparatus for the growth of films of silicides of refractory metals and films obtained by this process
02/17/1987US4643913 Process for producing solar cells
02/17/1987US4643804 Forming thick dielectric at the bottoms of trenches utilized in integrated-circuit devices
02/17/1987US4643799 Method of dry etching
02/17/1987US4643796 Moly mask removal tool
02/17/1987US4643777 Forming metal silicides
02/17/1987US4643774 Immersion in liquid and oscillation
02/17/1987US4643629 Automatic loader
02/17/1987US4643627 Vacuum transfer device
02/17/1987US4643527 Process for the production of a substrate for an electrically controlled device and display screen produced from such a substrate
02/17/1987US4642883 Semiconductor bipolar integrated circuit device and method for fabrication thereof
02/17/1987US4642881 Method of manufacturing nonvolatile semiconductor memory device by forming additional impurity doped region under the floating gate
02/17/1987US4642880 Method for manufacturing a recessed semiconductor device
02/17/1987US4642879 Forming aluminum nitride layer, doping and heat treatment
02/17/1987US4642878 Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions
02/17/1987US4642877 Method for making charge coupled device (CCD)-complementary metal oxide semiconductor (CMOS) devices
02/17/1987CA1218151A1 Semiconductor memory
02/17/1987CA1218135A1 Aluminum plate with electroplated metal laminate in contact with silicon for solar cell
02/12/1987WO1987000969A1 Three-level interconnection scheme for integrated circuits
02/12/1987WO1987000968A1 Positioning table
02/12/1987WO1987000967A1 Dielectric breakdown prevention technique
02/12/1987WO1987000966A1 Control of uniformity of growing alloy film
02/12/1987WO1987000965A1 Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources
02/12/1987DE3625860A1 Semiconductor device having a contact and device for producing it
02/12/1987DE3625819A1 Method and device for contactlessly measuring the resistivity of semiconductor wafers
02/11/1987CN86105604A Circuit arrangment for testing integrated circuit components
02/11/1987CN86105249A Semiconductor device and its manufacture
02/11/1987CN86102476A Method of reducing tube leakage and surface leakage of bi-polar device
02/10/1987US4642784 Integrated circuit manufacture
02/10/1987US4642674 Field effect semiconductor device having improved voltage breakdown characteristics
02/10/1987US4642673 Floating gate type EEPROM with a substrate region used for the control gate
02/10/1987US4642672 Semiconductor device having registration mark for electron beam exposure
02/10/1987US4642668 Semiconductor device having improved thermal characteristics
02/10/1987US4642667 Integrated circuits
02/10/1987US4642665 Vertically layered MOMOM tunnel device
02/10/1987US4642566 Method for the registration and representation of signals in the interior of integrated circuits by considering edge steepness and apparatus for implementing the method
02/10/1987US4642487 Special interconnect for configurable logic array
02/10/1987US4642438 Workpiece mounting and clamping system having submicron positioning repeatability
02/10/1987US4642282 Light-sensitive positive copying material with alkali soluble polycondensation binder
02/10/1987US4642259 Gallium arsenide filed effect transistor
02/10/1987US4642243 Electrode ionization
02/10/1987US4642171 Phototreating apparatus
02/10/1987US4642168 Electrolytic etching
02/10/1987US4642162 Spin coating photoresist, etching, bias sputter deposition, uniform thickness
02/10/1987US4642148 Reduced residual carbon
02/10/1987US4642144 Transferring electrons, increasing electroconductivity
02/10/1987US4642142 Mercury vapor
02/10/1987US4642140 Reacting metal base layer with acidic ions
02/10/1987US4641738 Momentum arresting device for an integrated circuit tester
02/10/1987US4641603 Epitaxial growing apparatus
02/10/1987US4641420 Forming a smoothing region on sidewalls of aperture
02/10/1987US4641419 Fabricating an integrated circuit device having a vertical pnp transistor
02/10/1987US4641418 Molding process for semiconductor devices and lead frame structure therefor
02/10/1987US4641417 Encapsulation of gate electrode
02/10/1987US4641416 Method of making an integrated circuit structure with self-aligned oxidation to isolate extrinsic base from emitter
02/10/1987CA1217880A Process for diffusing impurities into a semiconductor body
02/10/1987CA1217879A Integrated circuits employing proton-bombarded algaas layers
02/10/1987CA1217878A Integrated circuits employing ion-bombarded inp layers
02/10/1987CA1217877A Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
02/10/1987CA1217876A Semiconductor device and a method for fabricating the same
02/10/1987CA1217828A Cmos cell array with transistor isolation
02/10/1987CA1217784A Porous semiconductor dopant carriers
02/10/1987CA1217686A Metallization of ceramics
02/05/1987DE3526485A1 Schaltungsanordnung zum pruefen integrierter schaltungseinheiten Circuitry for testing integrated circuit units
02/04/1987EP0210858A2 Reactive ion etching deposition apparatus and method of using it
02/04/1987EP0210809A1 Nonvolatile electrically alterable memory and method
02/04/1987EP0210631A2 Method and apparatus for charged particle beam exposure
02/04/1987EP0210625A2 Low capacitance amorphous silicon field effect transistor structure
02/04/1987EP0210605A2 Plasma processing method and apparatus
02/04/1987EP0210578A2 System and method for depositing an electrical insulator in a continuous process
02/04/1987EP0210502A1 Method for removal of carbonaceous residues from ceramic structure having internal metallurgy
02/04/1987EP0210476A1 Bubbler cylinder device
02/04/1987EP0210439A1 Method for growing single crystals of dissociative compound semiconductor