Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/1992
12/30/1992EP0520560A2 Thin-film transistors and their manufacture
12/30/1992EP0520519A1 Plasma processing reactor and process for plasma etching
12/30/1992EP0520516A1 Linear image sensor
12/30/1992EP0520515A2 Semiconductor wafer-securing adhesive tape
12/30/1992EP0520490A1 Integrated circuit device having improved post for surface-mount package
12/30/1992EP0520485A1 Variable delay device
12/30/1992EP0520482A2 Multiple layer collector structure for bipolar transistors
12/30/1992EP0520470A2 Output circuit and semiconductor integrated circuit device
12/30/1992EP0520448A1 Panel having thin film element formed thereon
12/30/1992EP0520434A1 Integrated socket-type package for flip chip semiconductor devices and circuits
12/30/1992EP0520417A1 Temperature control system for lamp annealer
12/30/1992EP0520364A1 Photopolymerizable composition
12/30/1992EP0520355A1 Gate turn-off semi-conductor power component and method of making the same
12/30/1992EP0520295A1 Method and device for forming external connections in surface mounted components
12/30/1992EP0520265A2 Positive working radiation-sensitive composition with disulfone acid generators
12/30/1992EP0520216A2 Fabrication of defect free silicon on an insulating substrate
12/30/1992EP0520214A1 Method of forming a doped region in a substrate and use in the fabrication of a bipolar transistor
12/30/1992EP0520209A1 Method of manufacturing a CMOS semiconductor device
12/30/1992EP0520125A1 Switching circuit for connecting a first circuit node to a second or to a third circuit node in relation to the latter's potential, particularly for controlling the potential of an insulation region of an integrated circuit in relation to the substrate's potential
12/30/1992EP0520106A1 A wafer basket
12/30/1992EP0520105A1 A wafer basket
12/30/1992EP0470209B1 Metal-ion source and process for the generation of metal ions
12/30/1992CN2126464U Guiding-positioning apparatus for electroic element wire automatically-filling machine
12/29/1992US5175705 Semiconductor memory device having circuit for prevention of overcharge of column line
12/29/1992US5175609 Structure and method for corrosion and stress-resistant interconnecting metallurgy
12/29/1992US5175608 Method of and apparatus for sputtering, and integrated circuit device
12/29/1992US5175607 Semiconductor device and manufacturing method thereof
12/29/1992US5175606 Reverse self-aligned BiMOS transistor integrated circuit
12/29/1992US5175604 Field-effect transistor device
12/29/1992US5175602 Pseudo bi-phase charge coupled device having narrow channel effect
12/29/1992US5175597 Semiconductor component with schottky junction for microwave amplification and fast logic circuits
12/29/1992US5175435 For writing a pattern on an object
12/29/1992US5175399 Copper conductor laminated to substrate which also has organic dielectric, heat and chemical resistance
12/29/1992US5175129 Method of fabricating a semiconductor structure having an improved polysilicon layer
12/29/1992US5175128 Process for fabricating an integrated circuit by a repetition of exposure of a semiconductor pattern
12/29/1992US5175127 Forming contacts between alternating polycrystalline silicon layers in semiconductors by isotropic oxygen plasma etching of photoresist through dielectric oxide layer, simplification
12/29/1992US5175126 Process of making titanium nitride barrier layer
12/29/1992US5175125 Method for making electrical contacts
12/29/1992US5175124 Process for fabricating a semiconductor device using re-ionized rinse water
12/29/1992US5175123 High-pressure polysilicon encapsulated localized oxidation of silicon
12/29/1992US5175122 Coating substrate with dielectric, etching to leave sidewall spacers, depositing photoresist layer and etching it to form patterns
12/29/1992US5175121 Method for manufacturing a stacked capacitor DRAM semiconductor device
12/29/1992US5175120 Patterning and etching separately of conductive and dielectric materials of different conductivity types
12/29/1992US5175119 Method of producing insulated-gate field effect transistor
12/29/1992US5175118 Dry etching, wet etching high melting point metal silicide layer
12/29/1992US5175117 Method for making buried isolation
12/29/1992US5175115 Method of controlling metal thin film formation conditions
12/29/1992US5175060 Leadframe semiconductor-mounting substrate having a roughened adhesive conductor circuit substrate and method of producing the same
12/29/1992US5175021 Transmission line for providing power to an electrode boat in a plasma enhanced chemical vapor deposition system
12/29/1992US5175017 Method of forming metal or metal silicide film
12/29/1992US5175007 Mold assembly with separate encapsulating cavities
12/29/1992US5174858 Method of forming contact structure
12/29/1992US5174857 Slope etching process
12/29/1992US5174856 Stripping by exposure to oxygen and ammonia gas
12/29/1992US5174855 Surface treating apparatus and method using vapor
12/29/1992US5174854 Crystal growth of group II-VI compound semiconductor
12/29/1992US5174816 Surface treating agent for aluminum line pattern substrate
12/29/1992US5174748 Chamber having a hot zone and a cold zone and at least one gas inlet tube
12/29/1992US5174188 Process and device for marking and cleaving plaquettes of monocrystalline semiconductor materials
12/29/1992US5174067 Automatic wafer lapping apparatus
12/29/1992US5174045 Semiconductor processor with extendible receiver for handling multiple discrete wafers without wafer carriers
12/29/1992US5174043 Vacuum degassing and curing apparatus
12/29/1992US5174021 Device manipulation apparatus and method
12/29/1992CA2072455A1 Plasma assisted diamond synthesis
12/29/1992CA2072264A1 Thin-film transistor manufacture
12/29/1992CA1312148C Metal-semiconductor field-effect transistor formed in silicon carbide
12/27/1992CA2071662A1 Integrated socket-type package for flip-chip semiconductor devices and circuits
12/24/1992DE4219927A1 Anordnung von spannungsquelle- und erdungsleitungen einer halbleiterspeichereinrichtung Arrangement of spannungsquelle- and grounding lines of a semiconductor memory device
12/24/1992DE4219854A1 Electrically erasable and programmable semiconductor module - has first conductivity substrate with bounded by side walls and bottom
12/24/1992DE4219592A1 Dielectric insulation filled trenches prodn. in semiconductor substrate - using localised reaction substrate with deposited metal layer and removal of the prod., then filling trenches and planarising
12/24/1992DE4219342A1 MOS transistor with reduced short channel effect and series resistance - uses three implant levels for drain-source which are self-aligned using a double layer spacer
12/24/1992DE4139163A1 Referenzspannungserzeugungsschaltkreis Reference voltage generating circuit
12/24/1992DE4135148A1 Schaltkreis zum feststellen des rueckwaertigen vorspannungspegels in einer halbleiterspeichervorrichtung Circuit to determine the rearward bias level in a semiconductor memory device
12/24/1992DE4120394A1 Monolithisch integrierte schaltungsanordnung The monolithic integrated circuit arrangement
12/24/1992DE4120076A1 Multilayered wiring prodn. - involves applying adhesive layer on substrate and structuring, and providing redn. in the amt. of steps needed
12/23/1992WO1992022930A1 Plasma etching indium tin oxide using a deposited silicon nitride mask
12/23/1992WO1992022924A1 Basic cell architecture for mask programmable gate array
12/23/1992WO1992022923A1 Lead frame for integrated circuits or the like
12/23/1992WO1992022922A2 Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers
12/23/1992WO1992022920A1 Device for processing substrates within a plasma
12/23/1992WO1992022855A1 Photolithographically patterned fluorescent coating
12/23/1992WO1992022827A1 An improved miniature transponder device
12/23/1992WO1992022820A2 Semiconductor accelerometer and method of its manufacture
12/23/1992EP0519854A2 A method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface and device derived therefrom
12/23/1992EP0519852A1 An air-filled isolation trench with chemically vapor deposited silicon dioxide cap
12/23/1992EP0519830A2 Hemt type semiconductor device
12/23/1992EP0519692A2 Thin film transistor and method for manufacturing the same
12/23/1992EP0519676A2 Process of producing multiple layer glass-ceramic circuit board
12/23/1992EP0519665A1 Method for making a planar multi-layer metal bonding pad
12/23/1992EP0519632A2 Semiconductor device with high off-breakdown-voltage and low on-resistance and method of manufacturing the same
12/23/1992EP0519613A1 An automatic wafer etching method and apparatus
12/23/1992EP0519608A1 Substrate holder of thermally anisotropic material used for enhancing uniformity of grown epitaxial layers
12/23/1992EP0519592A2 Self-aligned planar monolithic integrated circuit vertical transistor process
12/23/1992EP0519473A2 Method of fabricating a semiconductor device having an insulating side wall
12/23/1992EP0519472A2 Diamond-metal junction product
12/23/1992EP0519439A2 Binders for diazo resins
12/23/1992EP0519393A2 Method for planarizing a semiconductor substrate surface
12/23/1992EP0519352A2 Semiconductor device provided with contact through a thick insulating film
12/23/1992EP0519299A1 Positive-working radiation-sensitive composition and radiation-sensitive recording material produced therewith
12/23/1992EP0519298A1 Radiation-sensitive sulfonic acid esters and their use