Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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07/13/1993 | US5227839 Small field scanner |
07/13/1993 | US5227838 Exposure system |
07/13/1993 | US5227717 Contact assembly for automatic test handler |
07/13/1993 | US5227708 Two-axis magnetically coupled robot |
07/13/1993 | US5227679 Cmos digital-controlled delay gate |
07/13/1993 | US5227675 Voltage generator for a semiconductor integrated circuit |
07/13/1993 | US5227665 Semiconductor integrated circuit device |
07/13/1993 | US5227661 Integrated circuit device having an aminopropyltriethoxysilane coating |
07/13/1993 | US5227658 Buried air dielectric isolation of silicon islands |
07/13/1993 | US5227657 Base-emitter reverse bias protection for bicmos ic |
07/13/1993 | US5227654 Semiconductor device with improved collector structure |
07/13/1993 | US5227653 Lateral trench-gate bipolar transistors |
07/13/1993 | US5227651 Semiconductor device having a capacitor with an electrode grown through pinholes |
07/13/1993 | US5227650 Charge coupled device delay line employing a floating gate or floating diffusion gate at its intermediate output portion |
07/13/1993 | US5227642 Apparatus for optically reading and discriminating symbols or characters represented by indentations formed on the surface of a sample |
07/13/1993 | US5227641 System for measuring the curvature of a semiconductor wafer |
07/13/1993 | US5227626 Lithography apparatus using scanning tunneling microscopy |
07/13/1993 | US5227473 Quinone diazide compound and light-sensitive composition containing same |
07/13/1993 | US5227341 Method of manufacturing a semiconductor device using an isopropyl alcohol ashing step |
07/13/1993 | US5227339 Forming ingot of semiconductor cylindrical crystal, slicing into disks, flattening |
07/13/1993 | US5227337 Vapor depositing refractory metal, two etch-back processes |
07/13/1993 | US5227336 Silicon reduction of tungsten hexfluoride; then silane reduction; monitoring silicon surface; multialyer coatings |
07/13/1993 | US5227335 Vapor depositing an overcoatings to cover the nitrides glue thin film of etched dielectric layer and substrates |
07/13/1993 | US5227334 LPCVD process for depositing titanium nitride (tin) films and silicon substrates produced thereby |
07/13/1993 | US5227333 Selective etchingof a semiconductor substrate covered by a blanket of germanium and an overcoating of an electroconductive layer |
07/13/1993 | US5227332 Depositing a layer of a material containing a plating catalysts on a substrate; covering material with a dielectric, forming an aperture in dielectri and plating to fill the aperture |
07/13/1993 | US5227331 CVD method for semiconductor manufacture using rapid thermal pulses |
07/13/1993 | US5227330 Producing defect-free films |
07/13/1993 | US5227329 Method of manufacturing semiconductor device |
07/13/1993 | US5227328 Method of producing epitaxial layers of II-VI semiconductors with high acceptor concentrations |
07/13/1993 | US5227326 Method for fabricating non-volatile memory cells, arrays of non-volatile memory cells |
07/13/1993 | US5227325 Method of forming a capacitor |
07/13/1993 | US5227324 Gate array and manufacturing method of semiconductor memory device using the same |
07/13/1993 | US5227323 Method of manufacturing capacitor elements in an integrated circuit having a compound semiconductor substrate |
07/13/1993 | US5227322 Method for manufacturing a highly integrated semiconductor device having a capacitor of large capacitance |
07/13/1993 | US5227321 Method for forming MOS transistors |
07/13/1993 | US5227320 Method for producing gate overlapped lightly doped drain (goldd) structure for submicron transistor |
07/13/1993 | US5227319 Manufacturing high curcuit integration, high accuracy semiconductors at a high yield |
07/13/1993 | US5227318 Method of making a cubic boron nitride bipolar transistor |
07/13/1993 | US5227317 Method of manufacturing semiconductor integrated circuit bipolar transistor device |
07/13/1993 | US5227316 Depositing refractory metal layer over semiconductor, heat treating to form silicide, forming etch protection layer, etching away unprotected unreacted metal |
07/13/1993 | US5227315 Process of introduction and diffusion of platinum ions in a slice of silicon |
07/13/1993 | US5227314 Aluminum cosputtered with chromium; reducing out-diffusion |
07/13/1993 | US5227280 Resists with enhanced sensitivity and contrast |
07/13/1993 | US5227276 Negative-working radiation-sensitive mixture, and radiation-sensitive recording material produced with this mixture |
07/13/1993 | US5227223 Electroless deposition of metal in catalytic pattern onto web |
07/13/1993 | US5227202 Applying electrical potential difference between spaced electrode pair to generate plasma discharge, positioning workpiece between electrodes and causing it to be at free floating electrical potential with respect to electrodes |
07/13/1993 | US5227191 Filling hole by metal vapor deposition |
07/13/1993 | US5227041 Dry contact electroplating apparatus |
07/13/1993 | US5227034 Method for electrolytic etching of silicon carbide |
07/13/1993 | US5227015 Method of fabricating semiconductor laser |
07/13/1993 | US5227014 Tapering of holes through dielectric layers for forming contacts in integrated devices |
07/13/1993 | US5227013 Forming via holes in a multilevel substrate in a single step |
07/13/1993 | US5227012 Method of manufacturing multi-layer thin film circuits containing integrated thin film resistors |
07/13/1993 | US5227008 Method for making flexible circuits |
07/13/1993 | US5227006 Method for selectively growing gallium-containing layers |
07/13/1993 | US5227003 Lead frame retaining device |
07/13/1993 | US5227001 Integrated dry-wet semiconductor layer removal apparatus and method |
07/13/1993 | US5227000 Plasma etching apparatus with accurate temperature and voltage level control on device under test |
07/13/1993 | US5226969 No solvent, printed circuit boards |
07/13/1993 | US5226968 Apparatus and method for oxidation treatment of metal |
07/13/1993 | US5226967 Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
07/13/1993 | US5226930 Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same |
07/13/1993 | US5226812 Vertical type heat-treating apparatus |
07/13/1993 | US5226758 Method and an apparatus for handling wafers |
07/13/1993 | US5226713 Storage vessel |
07/13/1993 | US5226636 Holding fixture for substrates |
07/13/1993 | US5226632 Slit valve apparatus and method |
07/13/1993 | US5226582 Method for wire-bonding an integrated circuit |
07/13/1993 | US5226437 Washing apparatus |
07/13/1993 | US5226403 Method of using an id saw slicing machine for slicing a single crystal ingot and an apparatus for carrying out the method |
07/13/1993 | US5226361 Integrated circuit marking and inspecting system |
07/13/1993 | US5226242 Vapor jet dryer apparatus and method |
07/13/1993 | US5226232 Method for forming a conductive pattern on an integrated circuit |
07/13/1993 | US5226226 Tube-shaped package for a semiconductor device and method therefor |
07/13/1993 | CA1320300C Photopatternable silicone polyamic acid, method of making and use |
07/13/1993 | CA1320113C Etching solutions containing ammonium fluoride and anionic esters of alkylphenol polyglycidol ethers |
07/13/1993 | CA1320106C Functional znse __te :h deposited film |
07/13/1993 | CA1320105C Use of alkylphosphines and alkylarsines in ion implantation |
07/13/1993 | CA1320104C Selective omcvd growth of compound semiconductor materials on silicon substrates |
07/13/1993 | CA1320103C Annealing method for iii-v deposition |
07/13/1993 | CA1320102C Method for forming a deposited film |
07/13/1993 | CA1320101C Crystal growing apparatus |
07/08/1993 | WO1993013637A1 Multi-layer circuit construction methods and structures with customization features and components for use therein |
07/08/1993 | WO1993013578A1 Semiconductor laser device |
07/08/1993 | WO1993013560A1 Electronic component and process for making it |
07/08/1993 | WO1993013555A1 Semiconductor device |
07/08/1993 | WO1993013554A1 Negative biasing of isolation trench fill to attract mobile positive ions away from bipolar device regions |
07/08/1993 | WO1993013553A1 Microwave energized deposition process using a pressure lower than the minimum point pressure of the paschen curve |
07/08/1993 | WO1993013551A1 Low-temperature fusion of dissimilar semiconductors |
07/08/1993 | WO1993013550A1 A method of constructing termination electrodes on yielded semiconductor die |
07/08/1993 | WO1993013549A1 Integrated circuit contact barrier formation with ion implant |
07/08/1993 | WO1993013548A1 Wafer susceptor |
07/08/1993 | WO1993013547A2 Integrated circuit |
07/08/1993 | WO1993013459A1 Selected novolak resins and selected radiation-sensitive compositions |
07/08/1993 | WO1993013246A1 Method and composition for cleaning articles |
07/08/1993 | WO1993013244A1 Surface reaction film formation apparatus |
07/08/1993 | WO1993013238A1 Vacuum surface treatment apparatus and method |
07/08/1993 | WO1993012874A1 Method of feeding ultrahigh-purity gas and feed system thereof |
07/08/1993 | DE4300108A1 Semiconductor device with good voltage seizing characteristics - comprises semiconductor region of second conducting type formed in surface of substrate |