| Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974) |
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| 09/14/1993 | US5244828 Method of fabricating a quantum device |
| 09/14/1993 | US5244827 Method for planarized isolation for cmos devices |
| 09/14/1993 | US5244826 Method of forming an array of finned memory cell capacitors on a semiconductor substrate |
| 09/14/1993 | US5244824 Trench capacitor and transistor structure and method for making the same |
| 09/14/1993 | US5244823 Process for fabricating a semiconductor device |
| 09/14/1993 | US5244822 Method of fabricating bipolar transistor using self-aligned polysilicon technology |
| 09/14/1993 | US5244821 Bipolar fabrication method |
| 09/14/1993 | US5244820 Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
| 09/14/1993 | US5244819 Method to getter contamination in semiconductor devices |
| 09/14/1993 | US5244818 Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits |
| 09/14/1993 | US5244817 Method of making backside illuminated image sensors |
| 09/14/1993 | US5244742 Reduced leakage current properties; lead titanate, lead titanate zirconate, lanthanum-containing lead titanate zirconate |
| 09/14/1993 | US5244730 Plasma deposition of fluorocarbon |
| 09/14/1993 | US5244712 Laminated diamond substrate |
| 09/14/1993 | US5244691 Corundum, silicon, platinum-coated silicon substrate; ceramic constituents dissolved in acetic acid; adding acetylacetone, hexamethylenetetramine; maturing or polymerizing obtained solution; depositing layer; drying; sintering |
| 09/14/1993 | US5244556 Method for depositing thin film on substrate by sputtering process |
| 09/14/1993 | US5244538 Method of patterning metal on a substrate using direct-write deposition of a mask |
| 09/14/1993 | US5244535 Method of manufacturing a semiconductor device including plasma treatment of contact holes |
| 09/14/1993 | US5244534 Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| 09/14/1993 | US5244533 Method of manufacturing bipolar transistor operated at high speed |
| 09/14/1993 | US5244527 Manufacturing unit for semiconductor devices |
| 09/14/1993 | US5244501 Apparatus for chemical vapor deposition |
| 09/14/1993 | US5244142 Method of mounting semiconductor elements |
| 09/14/1993 | US5244140 Ultrasonic bonding process beyond 125 khz |
| 09/14/1993 | CA1322250C Active dynamic memory cell |
| 09/14/1993 | CA1322231C V__ load dump protection circuit |
| 09/09/1993 | DE4306464A1 High voltage bipolar transistor - comprises high resistance collector layer formed on low resistance collector layer |
| 09/09/1993 | DE4306322A1 Layer connecting structure mfr. for semiconductor memory device - filling hole between upper and lower conductive layers with blocking metal film and tungsten film in two-stage process |
| 09/09/1993 | DE4304098A1 Positive photoresist compsn. contg. naphthoquinone-di:azido-sulphonate - of poly:hydroxy-phenyl benzene or alkane cpd. and alkali-soluble resin with high resolution and speed |
| 09/09/1993 | DE4238801A1 Dynamic random-access memory layout - has diffusion zones formed in common for two adjacent memory cells separated by channel zone at angle to word and bit lines |
| 09/09/1993 | DE4207264A1 Negative-working radiation-sensitive mixt. - contg. reactive binder with 2,2,2-tri:fluoro-1-hydroxy-1-tri:fluoro-methyl-ethyl gps., photo-acid and crosslinking cpd., useful e.g. as photoresist |
| 09/09/1993 | DE4207226A1 Monolithically integrated circuit with variable characteristic and function - has system for blowing of conductive tracks or short circuiting circuit elements via external terminals |
| 09/08/1993 | EP0559407A2 Fabricating dual gate thin film transistors |
| 09/08/1993 | EP0559405A2 Vertical and lateral isolation for a semiconductor device |
| 09/08/1993 | EP0559397A2 Precision positioning apparatus |
| 09/08/1993 | EP0559394A2 Process for planarizing an integrated circuit device |
| 09/08/1993 | EP0559384A2 Devices with tape automated bonding |
| 09/08/1993 | EP0559360A1 End station for a parallel beam ion implanter |
| 09/08/1993 | EP0559359A1 Ion beam implanter for providing cross plane focusing |
| 09/08/1993 | EP0559326A1 Compound semiconductor vapor phase epitaxial device |
| 09/08/1993 | EP0559323A2 Improved method of patterning a submicron semiconductor layer |
| 09/08/1993 | EP0559322A2 Structure and method for providing a reconfigurable emulation circuit |
| 09/08/1993 | EP0559313A1 Energy resolved emission microscopy system and method |
| 09/08/1993 | EP0559259A1 Method for transforming a liquid flow into a gas flow, and device for implementing the method |
| 09/08/1993 | EP0559233A1 Apparatus and method for etching semiconductor wafer |
| 09/08/1993 | EP0559204A1 Positive type resist composition |
| 09/08/1993 | EP0559155A1 Charge-to-voltage converter |
| 09/08/1993 | EP0558959A1 Phosphonooxy and carbonate derivatives of taxol |
| 09/08/1993 | EP0558925A1 Method for controlling roughness on surface of monocrystal |
| 09/08/1993 | EP0558795A1 Method for producing semiconductor chips |
| 09/08/1993 | EP0558781A1 Method and apparatus for exposure of substrates |
| 09/08/1993 | EP0558666A1 Topological image transfer method |
| 09/08/1993 | EP0558589A1 Bonding of solid state device to terminal board |
| 09/08/1993 | EP0558554A1 Silicon-on-porous-silicon; method of production and material |
| 09/08/1993 | EP0558480A1 Contrast enhancement of non-amplified alkali developable photoresists |
| 09/08/1993 | EP0409897B1 Constant level supply of a mercury evaporation cell for epitaxy |
| 09/08/1993 | CN1022077C Semiconductor integrated circuit |
| 09/07/1993 | US5243665 Component surface distortion evaluation apparatus and method |
| 09/07/1993 | US5243559 Semiconductor memory device |
| 09/07/1993 | US5243497 Chip on board assembly |
| 09/07/1993 | US5243406 Method and apparatus for measuring three-dimensional configuration of wire-shaped object in a short time |
| 09/07/1993 | US5243377 Lithography information control system |
| 09/07/1993 | US5243260 Method to produce a display screen with a matrix of transistors provided with an optical mask |
| 09/07/1993 | US5243259 Microwave plasma processing apparatus |
| 09/07/1993 | US5243238 Configurable cellular array |
| 09/07/1993 | US5243228 Substrate bias voltage generator circuit |
| 09/07/1993 | US5243226 Programming of antifuses |
| 09/07/1993 | US5243222 Copper alloy metallurgies for VLSI interconnection structures |
| 09/07/1993 | US5243219 Semiconductor device having impurity diffusion region formed in substrate beneath interlayer contact hole |
| 09/07/1993 | US5243214 Power integrated circuit with latch-up prevention |
| 09/07/1993 | US5243213 Mis semiconductor device formed by utilizing soi substrate having a semiconductor thin film formed on a substrate through an insulating layer |
| 09/07/1993 | US5243212 Transistor with a charge induced drain extension |
| 09/07/1993 | US5243209 Semiconductor memory device including junction field effect transistor and capacitor and method of manufacturing the same |
| 09/07/1993 | US5243208 Semiconductor integrated circuit device having a gate array with a ram and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array |
| 09/07/1993 | US5243207 Method to integrate HBTs and FETs |
| 09/07/1993 | US5243206 Logic circuit using vertically stacked heterojunction field effect transistors |
| 09/07/1993 | US5243205 Semiconductor device with overvoltage protective function |
| 09/07/1993 | US5243202 Aluminum-titanium, semiconductors |
| 09/07/1993 | US5243201 Mos-controlled thyristor mct |
| 09/07/1993 | US5243200 Semiconductor device having a substrate recess forming semiconductor regions |
| 09/07/1993 | US5243177 Image sensor with noise reduction and diminishment of residual images |
| 09/07/1993 | US5243141 Tab tape, method of bonding tab tape and tab tape package |
| 09/07/1993 | US5243140 Direct distribution repair and engineering change system |
| 09/07/1993 | US5242864 Polyimide process for protecting integrated circuits |
| 09/07/1993 | US5242863 Silicon diaphragm piezoresistive pressure sensor and fabrication method of the same |
| 09/07/1993 | US5242862 Semiconductor device and method of manufacturing same |
| 09/07/1993 | US5242861 Prevention of short circuiting, efficiency, accuracy |
| 09/07/1993 | US5242860 Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
| 09/07/1993 | US5242859 Exposing semiconductor surface to gas mixture containing an inert carrier and a dopant having specified volume and pressure |
| 09/07/1993 | US5242858 Process for preparing semiconductor device by use of a flattening agent and diffusion |
| 09/07/1993 | US5242857 Method of manufacturing semiconductor structures |
| 09/07/1993 | US5242855 Depositing an undoped amorphous silicon layer on a silicon oxide film or quartz substrate, depositing a doped silicon layer and heat treating to cause crystallization of layers and diffusion of dopant |
| 09/07/1993 | US5242854 High performance semiconductor devices and their manufacture |
| 09/07/1993 | US5242853 Efficiency |
| 09/07/1993 | US5242852 Method for manufacturing a semiconductor memory device |
| 09/07/1993 | US5242851 Programmable interconnect device and method of manufacturing same |
| 09/07/1993 | US5242850 Method of manufacturing a semiconductor memory device having reduced parasitically doped layers |
| 09/07/1993 | US5242849 Method for the fabrication of MOS devices |
| 09/07/1993 | US5242848 Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device |
| 09/07/1993 | US5242847 Forming a layer of doped silicon/germanium alloy on a defined area of the face of a semiconductor substrate and heating to diffuse dopant from alloy to semiconductor |