Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2004
03/18/2004US20040049870 Substrate scrubbing apparatus having stationary brush member in contact with edge bevel of rotating substrate
03/18/2004DE19651549B4 Anschlußrahmen und Chipgehäuse Lead frame and chip package
03/18/2004DE10341576A1 Manufacture of microelectronic structure comprises forming set of openings in surface of substrate, forming film stack, exposing oxide layer and silicon layer on portion of structure, and thermally nitriding silicon layer
03/18/2004DE10341062A1 Gate structure of non-volatile integrated circuit memory device, comprises thermal oxidation layer defining sidewall of gate structure, oxygen diffusion barrier layer on the sidewall, and floating gate with curved sidewall portion
03/18/2004DE10340882A1 Cleaning of annealed silicon wafer by oxidizing silicon wafer with ozonized water, and cleaning the oxidized silicon wafer with hydrofluoric acid
03/18/2004DE10339237A1 Verfahren zur In-Situ-Überwachung des Kristallisationszustands A method for in-situ monitoring of the crystallization state
03/18/2004DE10338986A1 Static random access memory component has load transistor in active region lying at an angle to drive transistor active region
03/18/2004DE10337757A1 Semiconductor wafer, has asymmetric edge profile extending between inner and outer edge profiles with arc that defines inner profile at point of intersection with top surface of wafer
03/18/2004DE10337561A1 DRAM mit verbessertem Leckstromverhalten und entsprechendes Herstellungsverfahren DRAM with improved leakage current characteristics and method of manufacture
03/18/2004DE10337509A1 Semiconductor manufacturing apparatus using network, provides communication between storage device and drawing unit storing drawing information, using storage area network
03/18/2004DE10336481A1 Abstandshalter für Gateelektrodenkontakte in einem Vertikal-DRAM-Bauelement Spacers for the gate electrode contacts in a vertical DRAM device
03/18/2004DE10334946A1 Verfahren zum Ausbilden einer selbstjustierenden Buried-Strap-Verbindung A method for forming a self-aligned buried strap connection
03/18/2004DE10334832A1 Steuerkreis zum Ansteuern eines Leistungshalbleiterbauelements Control circuit for driving a power semiconductor device
03/18/2004DE10334427A1 Verfahren zum Bilden eines Gate-Kontakts in einer Halbleitervorrichtung A method for forming a gate contact in a semiconductor device
03/18/2004DE10333810A1 Verfahren zum Bearbeiten eines Halbleiterwafers einschließlich Schleifen der Rückseite A method of processing a semiconductor wafer including grinding the back
03/18/2004DE10319314A1 System zum Übertragen von geistigem Eigentum bezüglich Halbleitern A system for transferring intellectual property with respect semiconductors
03/18/2004DE10260644B3 Doping a semiconductor body used for production of compensation components in high voltage elements comprises implanting doping centers of ions producing a conducting type in the semiconductor body, and heat treating
03/18/2004DE10241973A1 Epitaxial growth of an epitaxial material with silicon used in the production of semiconductor components comprises using a material containing nickel, silicon and aluminum
03/18/2004DE10241945A1 Production of a planar transistor used as a MOSFET comprises forming a semiconductor-on-isolator substrate, forming a gate insulating layer and a gate region on the substrate, forming a second insulating layer, and further processing
03/18/2004DE10241450A1 Production of a deformation sensor used in common rail diesel engines and in fuel injection engines comprises applying a sacrificial layer on or in a substrate, applying an activated layer on the sacrificial layer and further processing
03/18/2004DE10241300A1 Etching for silicon surfaces and layers, used in photovoltaic, semiconductor and high power electronics technology, for producing photodiode, circuit, electronic device or solar cell, is thickened alkaline liquid
03/18/2004DE10241172A1 Halbleiterspeicher mit vertikalen Speichertransistoren und Verfahren zu dessen Herstellung A semiconductor memory with vertical memory transistors and process for its preparation
03/18/2004DE10241171A1 Wort- und Bitleitungsanordnung für einen FINFET-Halbleiterspeicher Word and bit line for a FinFET semiconductor memory
03/18/2004DE10241170A1 Hochdichter NROM-FINFET The high-density NROM FinFET
03/18/2004DE10241156A1 Method for forming integrated pin photodiode forms doped region of one conductivity near to carrier substrate and doped region of second conductivity, further away from carrier substrate, between which is located undoped, or slightly doped
03/18/2004DE10240921A1 Process for selectively metallizing, especially gold-plating, three dimensional structures on wafers such as contact bumps in the production of circuit boards comprises partially immersing the structures on the wafer in an electrolyte
03/18/2004DE10240893A1 Production of memory cell, especially NROM memory cells, comprises implanting nitrogen into the walls of a trench before forming electrically insulating layers or producing covered spacers on the walls of the trench
03/18/2004DE10240748A1 Process for planarizing a surface of a silicon wafer used in the production of semiconductor components comprises applying a layer made from a polymer solution on the surface of the wafer, and removing a part of the layer
03/18/2004DE10240429A1 Production of a semiconductor structure used in the production of planar logic transistors comprises applying gate stacks onto a gate dielectric over a semiconductor substrate, implanting a dopant, and forming a side wall oxide
03/18/2004DE10240422A1 Halbleiterelement mit einer Polysilizium-Linienstruktur mit vergrößertem Metallsilizidbereichen und ein Verfahren zur Herstellung der Polysilizium-Linienstruktur eines Halbleiterelementes Semiconductor element having a polysilicon line structure with enlarged Metallsilizidbereichen and a method for preparing the polysilicon line structure of a semiconductor element
03/18/2004DE10240160A1 Corrosion-protected component used as a connecting element, such as a rivet, bolt or screw, comprises a base body made from a steel or light metal and a corrosion-inhibiting surface layer made from aluminum, alloy or compound
03/18/2004DE10239869A1 Production of dielectric layers used in the production of electronic components, e.g. transistors or capacitors, comprises preparing a substrate, forming a dielectric layer on the substrate, and subjecting the dielectric layer to a plasma
03/18/2004DE10239868A1 Production of column regions in semiconductor wafers used in the production of high voltage transistors comprises depositing alternating n-doped and p-doped epitaxial layer sections on a semiconductor substrate, and further processing
03/18/2004DE10239861A1 Transistoreinrichtung Transistor means
03/18/2004DE10239843A1 Manufacturing of contacts in semiconductor device comprises depositing dielectric layer on substrate and active devices, forming first opening, depositing second dielectric layer, providing mask, and forming second and third openings
03/18/2004DE10239580A1 Production of a compensation region used in semiconductors comprises forming primary doping material depots of first p-conductivity in a first region in a laterally displaced manner, and diffusing out the primary doping material depots
03/18/2004DE10239578A1 Vorrichtung und Verfahren zum Behandeln von Substraten Apparatus and method for processing substrates
03/18/2004DE10239491A1 Production of trenched bit lines in a semiconductor memory comprises using a mask which is produced whilst an auxiliary layer is applied on the whole surface and structured using a lacquer mask
03/18/2004DE10239311A1 Buffer store used for adjusting component mounting unit for semiconductor wafers during technological processing, e.g. in implantation, sputtering, lithography, etc. installations storage, and transportation, has loading aperture laterally
03/18/2004DE10239306A1 Verfahren zum selektiven Verbinden von Substraten A method of selectively bonding substrates
03/18/2004DE10213813B4 Verfahren zum Bewerten der Stabilität eines Ionenimplantierers Method for evaluating the stability of an ion implanter
03/18/2004DE10142913B4 Vertikale Transistoranordnung mit einem flexiblen, aus Kunststofffolien bestehenden Substrat und Verfahren zu deren Herstellung Vertical transistor array with a flexible substrate made of plastic films and processes for their preparation
03/18/2004CA2670068A1 Metallic material for electronic components, method of working and process for producing thereof
03/18/2004CA2669987A1 Metallic material for electronic components, method of working and process for producing thereof
03/18/2004CA2497482A1 optical microsystem and method for making same
03/18/2004CA2497395A1 Metallic material for electronic components, method of working and process for producing thereof
03/18/2004CA2497310A1 System of transporting and storing containers of semiconductor wafers and transfer mechanism
03/18/2004CA2497266A1 Nitrogen sources for molecular beam epitaxy
03/18/2004CA2494527A1 Method of fabricating a self-aligned non-volatile memory cell
03/17/2004EP1398836A2 Thin film semiconductor device and manufacturing method
03/17/2004EP1398835A1 Magnetic memory and its drive method, and magnetic memory apparatus comprising it
03/17/2004EP1398832A2 Camera module for compact electronic equipments
03/17/2004EP1398831A2 Air gaps formation
03/17/2004EP1398830A1 Process for the contact opening definition for the active element electric connections
03/17/2004EP1398829A2 Substrate and manufacturing method therefor
03/17/2004EP1398828A2 Semiconductor package with a precured polymer encapsulating compound and method for manufacturing the same
03/17/2004EP1398827A2 Method for removing residue from a film stack
03/17/2004EP1398826A1 Microwave plasma processing device, plasma processing method, and microwave radiating member
03/17/2004EP1398825A2 Substrate and manufacturing method therefor
03/17/2004EP1398820A2 Plasma treatment apparatus
03/17/2004EP1398819A2 Matching box, vacuum apparatus using the same, and vacuum processing method
03/17/2004EP1398817A2 Particle optics and method for operating such
03/17/2004EP1398804A2 Variable capacitor and method for manufacturing same
03/17/2004EP1398795A2 Magnetic memory cell
03/17/2004EP1398794A2 Data storage device
03/17/2004EP1398790A2 Magnetoresistive effect element, magnetic memory device and method of fabricating the same
03/17/2004EP1398789A2 Magnetic random access memory with soft magnetic reference layers
03/17/2004EP1398788A2 Magnetoresistiv data storage device
03/17/2004EP1398672A2 Optimisation of a parameter in an exposure apparatus
03/17/2004EP1398671A1 Resist pattern thickening material, process for forming resist pattern, and process for manufacturing semiconductor device
03/17/2004EP1398668A2 Reticle manipulators and related methods for conveying thin, circular reticles as used in charged-particle-beam microlithography
03/17/2004EP1398666A2 Method of achieving CD linearity control for full chip chromeless phase lithography manufacturing
03/17/2004EP1398640A2 Device for measuring and analyzing electrical signals of an integrated circuit component
03/17/2004EP1398639A2 Test structures for on-chip real-time reliability testing
03/17/2004EP1398521A1 Shock absorbing apparatus in a positioning apparatus
03/17/2004EP1398507A2 Multistage Roots-type vacuum pump
03/17/2004EP1398339A1 Polysiloxane, process for production thereof and radiation-sensitive resin composition
03/17/2004EP1398298A2 Process of making an all-silicon microphone
03/17/2004EP1398297A2 Electronic component with carbon nanotube interconnects and method of manufacturing the same
03/17/2004EP1398109A2 Stage apparatus and its driving method, exposure apparatus and device manufacturing method
03/17/2004EP1397948A1 Placing device and method for placing objects onto substrates
03/17/2004EP1397863A2 Reconfigurable logic device
03/17/2004EP1397838A2 COMPLEMENTARY ACCUMULATION-MODE JFET INTEGRATED CIRCUIT TOPOLOGY USING WIDE (> 2eV) BANDGAP SEMICONDUCTORS
03/17/2004EP1397835A2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure
03/17/2004EP1397834A2 Sti process for dram
03/17/2004EP1397833A2 System and method to form a composite film stack utilizing sequential deposition techniques
03/17/2004EP1397832A2 Method for isolating semiconductor devices
03/17/2004EP1397831A1 A method of packaging a semiconductor chip
03/17/2004EP1397830A2 Copper vias in low-k technology
03/17/2004EP1397829A1 Method of polishing an integrated circuit device using dummy features
03/17/2004EP1397828A1 Electrolytic processing device and substrate processing apparatus
03/17/2004EP1397827A1 Arrangement comprising a support body with a substrate holder mounted thereon on a gas bearing with rotating drive
03/17/2004EP1397808A1 Steering gate and bit line segmentation in non-volatile memories
03/17/2004EP1397806A1 Identification of an integrated circuit from its physical manufacture parameters
03/17/2004EP1397534A2 A method of growing a semiconductor layer
03/17/2004EP1397530A2 Apparatus and methods for electrochemical processing of microelectronic workpieces
03/17/2004EP1397529A1 Application of dense plasmas generated at atmospheric pressure for treating gas effluents
03/17/2004EP1397528A2 Device for depositing especially, crystalline layers on one or more substrates, especially substrates which are also crystalline
03/17/2004EP1397458A1 A silica and a silica-based slurry
03/17/2004EP1397452A1 A silica-based slurry