Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
10/2004
10/14/2004US20040201065 Deep N wells in triple well structures and method for fabricating same
10/14/2004US20040201064 Organic thin-film semiconductor element and manufacturing method for the same
10/14/2004US20040201063 Semiconductor device and method of fabricating same
10/14/2004US20040201062 Semiconductor device
10/14/2004US20040201060 Programmable memory devices supported by semiconductor substrates
10/14/2004US20040201059 Nonvolatile memories with a floating gate having an upward protrusion
10/14/2004US20040201058 Nonvolatile semiconductor memory device having grooves isolating the floating electrodes of memory cells and method of manufacturing the nonvolatile semiconductor memory device
10/14/2004US20040201057 Method of forming a metal-insulator - metal capacitor structure in a copper damascene process sequence
10/14/2004US20040201055 Semiconductor memory with memory cells comprising a vertical selection transistor and method for fabricating it
10/14/2004US20040201054 DRAM array, method of manufacturing a DRAM array, and computer system
10/14/2004US20040201053 Embedded DRAM for metal-insulator-metal (MIM) capacitor structure
10/14/2004US20040201052 Semiconductor integrated circuit device
10/14/2004US20040201051 Integrated semiconductor circuit having a multiplicity of memory cells
10/14/2004US20040201050 Ferroelectric capacitor
10/14/2004US20040201049 Suppression of electrode re-crystallisation in a ferrocapacitor
10/14/2004US20040201045 Voltage-controlled capacitive element and semiconductor integrated circuit
10/14/2004US20040201043 Bit line contact hole and method for forming the same
10/14/2004US20040201041 Method and apparatus for capturing and using design intent in an integrated circuit fabrication process
10/14/2004US20040201040 Electronic device
10/14/2004US20040201039 Silicon-germanium mesa transistor
10/14/2004US20040201038 Compound semiconductor device and its manufacture
10/14/2004US20040201037 Heterostructure semiconductor device
10/14/2004US20040201034 Semiconductor device
10/14/2004US20040201031 Semiconductor laser element and optical data recording device
10/14/2004US20040201030 GaN growth on Si using ZnO buffer layer
10/14/2004US20040201023 Semiconductor device and method for manufacturing same
10/14/2004US20040201022 Semiconductor device
10/14/2004US20040201021 Active-matrix substrate and method of fabricating same
10/14/2004US20040201019 Polysilicon thin film transistor array panel and manufacturing method thereof
10/14/2004US20040201017 Asymmetry thin-film transistor
10/14/2004US20040201016 Interconnect structure
10/14/2004US20040201014 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
10/14/2004US20040201013 Method of fabricating multi layer mems and microfluidic devices
10/14/2004US20040201012 Method of fabricating vertical integrated circuits
10/14/2004US20040201010 Electron device which controls quantum chaos and quantum chaos controlling method
10/14/2004US20040201007 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device
10/14/2004US20040200963 Infrared absorption measurement method, infrared absorption measurement device, and method of manufacturing semiconductor device
10/14/2004US20040200886 Tin antimony solder for MOSFET with TiNiAg back metal
10/14/2004US20040200884 Wire bonder with a device for determining the vectorial distance between the capillary and the image recognition system and method
10/14/2004US20040200806 Adding water to reduce concentration of phosphoric acid in the etching solution, causing silicon compound to precipitate, filtering to return the etching solution for reuse
10/14/2004US20040200804 Method of processing quartz member for plasma processing device, quartz member for plasma processing device, and plasma processing device having quartz member for plasma processing device mounted thereon
10/14/2004US20040200803 etching a via filled with photoresist plug through dielectric layers, then etching a trench, wsubstrate having the first and second dielectric layers on it is wet with hydrofluoric acid for enough time to remove via fence formed in the trench; dual damascene integrated circuit formation; semiconductors
10/14/2004US20040200802 Apparatus and method for reactive atom plasma processing for material deposition
10/14/2004US20040200788 Cassette for receiving glass substrates
10/14/2004US20040200728 Improved flatness when fine and large holes are present in the surface of a substrate and when subsequent chemical mechanical polishing is used; plating a film of a conductive material on the substrate surface in a plating liquid and electrolytic-etching a surface of the plated film formed
10/14/2004US20040200727 Copper electroplating method, pure copper anode for copper electroplating, and semiconductor wafer plated thereby with little particle adhesion
10/14/2004US20040200725 Application of antifoaming agent to reduce defects in a semiconductor electrochemical plating process
10/14/2004US20040200718 Plasma processing method and apparatus
10/14/2004US20040200576 Method and apparatus for plasma cleaning of workpieces
10/14/2004US20040200575 wet etching system for substrates having regions covered with self-assembled monolayers (SAMs) composed of KCN/Oxygen; and a perfluoroalkylthiol nonpolar additive that has a higher affinity to the regions of said substrate covered with SAMs than to the other regions of said substrate.
10/14/2004US20040200574 Method for controlling a process for fabricating integrated devices
10/14/2004US20040200534 Gate valve apparatus
10/14/2004US20040200515 Probe pin cleaning device
10/14/2004US20040200513 Substrate processing apparatus
10/14/2004US20040200510 Apparatus and method for splash-back proofing
10/14/2004US20040200501 engaging semiconductor wafers in a process plane via window, spinning, and cleaning/etching
10/14/2004US20040200500 Ultrasonic-wave washing unit, ultrasonic-wave washing apparatus, ultrasonic-wave washing method, method of manufacturing a semiconductor device, and method of manufacturing a liquid crystal display
10/14/2004US20040200417 Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
10/14/2004US20040200415 Substrate processing apparatus
10/14/2004US20040200413 Chemical vapor deposition apparatus
10/14/2004US20040200412 Chemical vapor deposition reactor and process chamber for said reactor
10/14/2004US20040200409 Scrubber with integrated vertical marangoni drying
10/14/2004US20040200407 Low indium content quantum well structures
10/14/2004US20040200406 Method for growing single crystal GaN on silicon
10/14/2004US20040200368 Mold structures, and method of transfer of fine structures
10/14/2004US20040200244 Remote plasma enhanced cleaning apparatus
10/14/2004US20040200226 Exposure apparatus
10/14/2004US20040200214 Trap apparatus
10/14/2004US20040200065 Electronic circuit device and method of manufacturing the same
10/14/2004US20040200064 Semiconductor chip pick and place process and equipment
10/14/2004US20040200062 Leadframeless package structure and method
10/14/2004US20040200061 Conductive pattern and method of making
10/14/2004DE4102731B4 Lithographieeinrichtung zum direkten Beschreiben eines Subtrates Lithography for directly describing a Subtrates
10/14/2004DE19746706B4 Verfahren zur Herstellung einer Solarzelle A process for producing a solar cell
10/14/2004DE19629251B4 Verfahren zum Herstellen von Proben zur Analyse von Defekten von Halbleitereinrichtungen A method of producing samples for the analysis of defects of semiconductor devices
10/14/2004DE10358768A1 Metal line formation method in semiconductor device, involves performing etching process to form metal fuse with one side connected to metal line and other side to substrate and isolating metal line and metal fuse electrically
10/14/2004DE10352436A1 Druckkontakt-Halbleitervorrichtung The pressure contact type semiconductor device
10/14/2004DE10313832A1 Baueinheit und Verfahren zur Herstellung einer Baueinheit Assembly and method for making a structural unit
10/14/2004DE10313692A1 Method for processing a substrate for surface treatment, e.g. rinsing, etching, polishing and cleaning, of silicon wafers comprises homogeneously selecting the speed of the process medium along the surface of the substrate
10/14/2004DE10311965A1 Flip-Chip Anordnung auf einem Substratträger Flip-chip mounting on a substrate support
10/14/2004DE10311855A1 Appliance for transfer of information or structures onto wafer, using stamp with raised structures produced by suitable method, e.g. photolithography in conjunction with etching
10/14/2004DE10297564T5 Verfahren und Vorrichtung zum Steuern der Photolithographie-Überlagerungsjustierung mit vorwärtsgekoppelter Überlagerungsinformation Method and apparatus for controlling the photolithography overlay adjustment with feedforward overlay information
10/14/2004DE10297368T5 System und Verfahren zum Erwärmen von Halbleiterwafern durch Optimieren der Absorption elektromagnetischer Energie System and method for heating semiconductor wafers by optimizing the absorption of electromagnetic energy
10/14/2004DE10296984T5 Niederspannungs- und schnittstellenbeschädigungsfreie polymere Speichervorrichtung Low Voltage and interface damage-free polymer memory device
10/14/2004DE10296932T5 Plasmabehandlungeinrichtung und Plasmabehandlungsverfahren Plasma processing apparatus and plasma processing method
10/14/2004DE10296931T5 Plasmabehandlungseinrichtung, Plasmabehandlungsverfahren, und Verfahren zur Herstellung eines Halbleiterbauelements Plasma processing apparatus, plasma processing method, and process for producing a semiconductor device
10/14/2004DE102004010676A1 Verfahren zur Herstellung eines Halbleiterwafers A process for producing a semiconductor wafer
10/14/2004DE102004008900A1 Vorrichtung und Verfahren zum Verarbeiten von Wafern Apparatus and method for processing of wafers
10/14/2004DE102004002902A1 Herstellungsverfahren für ein elektronisches Bauteil Manufacturing method for an electronic component
10/14/2004DE102004001350A1 Förder-bzw. Funding respectively. Transportvorrichtung für ein plattenartiges Werkstück Transport device for a plate-like workpiece
10/14/2004CA2528184A1 Polycrystalline germanium-based waveguide detector integrated on a thin silicon-on-insulator (soi) platform
10/14/2004CA2520992A1 Method for manufacturing an electronic module and an electronic module
10/14/2004CA2520661A1 Nanotube-on-gate fet structures and applications
10/14/2004CA2514345A1 Thermal process for reducing the concentration of dinitrogen difluoride and dinitrogen tetrafluoride in nitrogen trifluoride
10/14/2004CA2464280A1 Low cost thermal management device or heat sink manufactured from conductive loaded resin-based materials
10/13/2004EP1467411A2 High-voltage field-effect transistor
10/13/2004EP1467409A2 CMOS pixel with dual gate PMOS transistor
10/13/2004EP1467405A1 Method for gettering transition metal impurities in silicon crystal
10/13/2004EP1467404A2 Group iii-nitride layers with patterned surfaces
10/13/2004EP1467402A1 Ic chip manufacturing method