H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2004
12/30/2004	US20040266170 Method of forming contacts in semiconductor device
12/30/2004	US20040266169 Semiconductor device fabrication method
12/30/2004	US20040266168 Semiconductor device comprising low dielectric material film and its production method
12/30/2004	US20040266167 Method and apparatus for an improved air gap interconnect structure
12/30/2004	US20040266166 Method for manufacturing semiconductor device
12/30/2004	US20040266165 Method of producing thin-film device, electro-optical device, and electronic apparatus
12/30/2004	US20040266164 Bumping process to increase bump height
12/30/2004	US20040266163 Bumping process
12/30/2004	US20040266162 Semiconductor wafer package and manufacturing method thereof
12/30/2004	US20040266161 Bumping process
12/30/2004	US20040266160 Parasitic capacitance-preventing dummy solder bump structure and method of making the same
12/30/2004	US20040266159 Method for forming interconnects on thin wafers
12/30/2004	US20040266158 Plasma spraying for joining silicon parts
12/30/2004	US20040266157 Process for producing semiconductor layers based on III-V nitride semiconductors
12/30/2004	US20040266156 Method for fabricating semiconductor device with improved refresh time
12/30/2004	US20040266155 Formation of small gates beyond lithographic limits
12/30/2004	US20040266154 Method for fabricating transistor with polymetal gate electrode
12/30/2004	US20040266153 Methods of forming metal silicide
12/30/2004	US20040266152 Method for producing a gate structure for an MOS transistor
12/30/2004	US20040266151 Method for fabricating gate-electrode of semiconductor device with use of hard mask
12/30/2004	US20040266150 Method of manufacturing a field effect transistor and a liquid crystal display using the same
12/30/2004	US20040266149 Method of manufacturing semiconductor device
12/30/2004	US20040266148 Method for producing quantum dot silicate thin film for light emitting device
12/30/2004	US20040266147 Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device
12/30/2004	US20040266146 Laser crystallizing device and method for crystallizing silicon by using the same
12/30/2004	US20040266145 Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby
12/30/2004	US20040266144 Method of producing integrated semiconductor components on a semiconductor substrate
12/30/2004	US20040266143 Method of forming semiconductor device
12/30/2004	US20040266142 Method and device for the production of thin epiatctic semiconductor layers
12/30/2004	US20040266141 Suppression of chemical reactivity on semiconductor surfaces
12/30/2004	US20040266140 Stabilization of fluorine-containing dielectric materials in a metal insulator wiring structure
12/30/2004	US20040266139 Semiconductor device and manufacturing method thereof
12/30/2004	US20040266138 Process for manufacturing a semiconductor chip
12/30/2004	US20040266137 Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance
12/30/2004	US20040266136 Method for fabricating semiconductor device having trench type device isolation layer
12/30/2004	US20040266135 Method for forming floating gate in flash memory device
12/30/2004	US20040266134 Novel approach to improve line end shortening
12/30/2004	US20040266133 Method for manufacturing shallow trench isolation in semiconductor device
12/30/2004	US20040266132 Method of forming device isolation film in semiconductor device
12/30/2004	US20040266131 Method of producing semiconductor devices
12/30/2004	US20040266130 Integrating metal with ultra low-k dielectrics
12/30/2004	US20040266129 Method of forming silicon-on-insulator wafers having process resistant applications
12/30/2004	US20040266128 Bonded SOI wafer with <100> device layer and <110> substrate for performance improvement
12/30/2004	US20040266127 Method for manufacturing alignment mark of semiconductor device using STI process
12/30/2004	US20040266126 Method for manufacturing semiconductor capacitor having double dielectric layer therein
12/30/2004	US20040266125 Method for manufacturing capacitor of semiconductor device
12/30/2004	US20040266124 Elevated source drain disposable spacer CMOS
12/30/2004	US20040266123 Electron beam treatment of SixNy films
12/30/2004	US20040266122 Method for manufacturing a semiconductor device having an improved disposable spacer
12/30/2004	US20040266121 Novel process method of source drain spacer engineering to improve transistor capacitance
12/30/2004	US20040266120 Method of fabricating a robust gate dielectric using a replacement gate flow
12/30/2004	US20040266119 Semiconductor constructions comprising metal silicide
12/30/2004	US20040266118 Method for manufacturing a semiconductor device
12/30/2004	US20040266117 Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere
12/30/2004	US20040266116 Methods of fabricating semiconductor structures having improved conductivity effective mass
12/30/2004	US20040266115 Method of making a gate electrode on a semiconductor device
12/30/2004	US20040266114 Method for fabricating dual-gate semiconductor device
12/30/2004	US20040266113 Post high voltage gate oxide pattern high-vacuum outgas surface treatment
12/30/2004	US20040266112 Method of fabricating a vertical quadruple conduction channel insulated gate transistor, and integrated circuit including this kind of transistor
12/30/2004	US20040266111 Method for manufacturing flash memory device
12/30/2004	US20040266110 Method of forming tunnel oxide film in semiconductor device
12/30/2004	US20040266109 Semiconductor storage elements, semiconductor device manufacturing methods therefor, portable electronic equipment and IC card
12/30/2004	US20040266108 Multi-bit stacked-type non-volatile memory and manufacture method thereof
12/30/2004	US20040266107 Non-volatile memory having a reference transistor and method for forming
12/30/2004	US20040266106 Method for forming bit line of flash device
12/30/2004	US20040266105 Selfaligned process for a flash memory
12/30/2004	US20040266104 Method for manufacturing memory
12/30/2004	US20040266103 Method for fabricating capacitor using metastable-polysilicon process
12/30/2004	US20040266102 Method for manufacturing capacitor bottom electrode of semiconductor device
12/30/2004	US20040266101 Storage node contact forming method and structure for use in semiconductor memory
12/30/2004	US20040266100 Method of fabricating semiconductor device having capacitor
12/30/2004	US20040266099 Integrated circuit, its fabrication process and memory cell incorporating such a circuit
12/30/2004	US20040266098 Method of forming geometric deep trench capacitors
12/30/2004	US20040266096 Three-dimensional ferroelectric capacitor and method for manufacturing thereof as well as semiconductor memory device
12/30/2004	US20040266095 Method for manufacturing ferroelectric random access memory capacitor
12/30/2004	US20040266094 Plate-like workpiece dividing apparatus
12/30/2004	US20040266092 System and method for data retention with reduced leakage current
12/30/2004	US20040266091 Method for manufacturing semiconductor device and the device thereof
12/30/2004	US20040266090 Semiconductor device and method for manufacturing semiconductor device
12/30/2004	US20040266088 DRAM memory cell and method for fabricating such a DRAM memory cell
12/30/2004	US20040266085 Integrated multi-step gap fill and all feature planarization for conductive materials
12/30/2004	US20040266083 Nonplanar device with stress incorporation layer and method of fabrication
12/30/2004	US20040266082 Method of fabricating bottom-gated polycrystalline silicon thin film transistor
12/30/2004	US20040266081 Methods of forming field effect transistors including raised source/drain regions
12/30/2004	US20040266080 Crystallization method, crystallization apparatus, processed substrate, thin film transistor and display apparatus
12/30/2004	US20040266079 Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
12/30/2004	US20040266078 Method of fabricating polycrystalline silicon thin film for improving crystallization characteristics and method of fabricating liquid crystal display device using the same
12/30/2004	US20040266077 Structure and method for forming the gate electrode in a multiple-gate transistor
12/30/2004	US20040266076 HYBRID PLANAR AND FinFET CMOS DEVICES
12/30/2004	US20040266075 Method for fabricating a low temperature polysilicon thin film transistor
12/30/2004	US20040266074 Method for fabrication of polycrystalline silicon thin film transistors
12/30/2004	US20040266073 Method of manufacturing semiconductor device and display device
12/30/2004	US20040266072 Focused ion beam treatment method and semiconductor device suitable for its implementation
12/30/2004	US20040266071 Method for forming pi-type assistant electrode
12/30/2004	US20040266070 Method of forming an integrated circuit substrate
12/30/2004	US20040266069 Overmolding encapsulation process and encapsulated article made therefrom
12/30/2004	US20040266067 Semiconductor device and method for fabricating the same
12/30/2004	US20040266066 Bump structure of a semiconductor wafer and manufacturing method thereof
12/30/2004	US20040266064 Method and apparatus for imprinting a circuit pattern using ultrasonic vibrations
12/30/2004	US20040266063 Apparatus and method for manufacturing thermal interface device having aligned carbon nanotubes

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