Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2014
02/27/2014US20140054589 Bismuth-doped semi-insulating group iii nitride wafer and its production method
02/27/2014US20140054586 Manufacturing method of array substrate, array substrate and display
02/27/2014US20140054584 Semiconductor device and manufacturing method thereof
02/27/2014US20140054550 Method for n-doping graphene
02/27/2014US20140054549 Gated circuit structure with ultra-thin, epitaxially-grown tunnel and channel layer
02/27/2014US20140054548 Techniques for forming non-planar germanium quantum well devices
02/27/2014US20140054540 Device including semiconductor nanocrystals & method
02/27/2014US20140054534 Self-aligned interconnection for integrated circuits
02/27/2014US20140054532 Access device, fabrication method thereof, and semiconductor memory device having the same
02/27/2014US20140054531 Defect enhancement of a switching layer in a nonvolatile resistive memory element
02/27/2014US20140054020 Method for fabricating a heat sink, and a heat sink
02/27/2014US20140053983 Plasma processing apparatus and plasma processing method
02/27/2014US20140053979 Reduced number of masks for ic device with stacked contact levels
02/27/2014US20140053978 Barrier Layer Removal Method and Apparatus
02/27/2014US20140053974 Lamination method and lamination system
02/27/2014US20140053901 Hydrolysis Resistant Polyester Films
02/27/2014US20140053894 GRADED GeSn ON SILICON
02/27/2014US20140053884 Megasonic Precision Cleaning Of Semiconductor Process Equipment Components And Parts
02/27/2014US20140053882 Liquid processing apparatus and liquid processing method
02/27/2014US20140053869 Maranagoni Dry with Low Spin Speed for Charging Release
02/27/2014US20140053868 Method And Apparatus For Surface Cleaning
02/27/2014US20140053662 Penetrable cap
02/27/2014US20140053382 Methods and apparatus for separating a substrate
02/27/2014DE112012002533T5 Tischbaugruppe und Steuerungsverfahren für eine Tischbaugruppe Table assembly and control method for an assembly table
02/27/2014DE112012002481T5 Siliciumcarbid-Halbleitervorrichtung und Verfahren zum Herstellen einer Siliciumcarbid-Halbleitervorrichtung Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
02/27/2014DE112012002344T5 Poliermittel und Polierverfahren Polishing agent and polishing method
02/27/2014DE112008001114B4 Vorrichtung für die Oberflächenprüfung A device for surface inspection
02/27/2014DE10262346B4 Nicht-flüchtige Floating-Trap-Halbleiterspeichervorrichtung aufweisend eine Sperrisolationsschicht mit hoher Dielektrizitätskonstante Non-volatile floating-trap semiconductor memory device comprising a blocking insulating layer with high dielectric constant
02/27/2014DE102013210972A1 Halbleiterbauelement Semiconductor device
02/27/2014DE102013111154A1 Method for testing semiconductor component e.g. trench FETs, involves applying electrical test potential on additional electrode to detect defects in component cell
02/27/2014DE102013109282A1 Verfahren zum Schmelzen einer Laserschmelzsicherung und Verfahren zur Bearbeitung eines Wafers A method of melting a laser fuse and method for processing a wafer
02/27/2014DE102013109028A1 Verfahren zur Herstellung eines Bauelements, umfassend das Schneiden eines Trägers A method for producing a device, comprising the cutting of a carrier
02/27/2014DE102013109011A1 Verfahren zum Bilden eines Stapels von Elektroden und damit hergestellte dreidimensionale Halbleitervorrichtungen A method for forming a stack of electrodes and three-dimensional semiconductor devices produced thereby
02/27/2014DE102013108986A1 Anschlussstruktur sowie Halbleiterelement und Modelsubstrat mit einer solchen Anschlussstruktur Connection structure and semiconductor element and model substrate with such a connection structure
02/27/2014DE102013108979A1 Anschlussstruktur und Halbleiterbauelement Connection structure and semiconductor device
02/27/2014DE102013108967A1 Verfahren und Herstellung eines Elektronikmoduls und Elektronikmodul Processes and manufacturing an electronic module and electronic module
02/27/2014DE102013108850A1 Ionenquellenvorrichtungen und -verfahren Ion source apparatus and methods
02/27/2014DE102013108704A1 Ein Verfahren zum Herstellen einer Metallpadstruktur eines Die, ein Verfahren zum Herstellen eines Bondpads eines Chips, einer Die-Anordnung und einer Chipanordnung A method of manufacturing a Metallpadstruktur The one, a method for manufacturing a bonding pad of a chip, a die assembly and a die assembly
02/27/2014DE102013108240A1 Thin-film processing system useful for chemical bath deposition on solar cell substrates for treatment of substrates, comprises solution delivery unit, unit for chemical bath deposition, and solution outflow
02/27/2014DE102013104111A1 Method for forming package-on-package (POP) semiconductor device of electronic product, involves stacking die portion on substrate, where thermal expansion coefficients of die portion and substrate are different relative to carrier
02/27/2014DE102013013514A1 Thermische laserausheil- bzw. -annealingverfahren ohne schmelzen für dünne wafer Thermal laserausheil- or -annealingverfahren without melting for thin wafer
02/27/2014DE102012215092A1 Messung der Lichtstrahlung von Leuchtdioden Measurement of the light radiation from light emitting diodes
02/27/2014DE102012215067A1 Method for producing isolated semiconductor devices e.g. LED, involves carrying out etching process for cutting the substrate in separation areas formed in substrate through recess walls, and forming isolated semiconductor devices
02/27/2014DE102012214998A1 Method for simultaneous double-sided machining of front and back of e.g. silicon wafer slice, involves inserting semiconductor element into recess formed in base surface of rotor disc to avoid contact of working layer and base surface
02/27/2014DE102012111822A1 Vorrichtung und Verfahren für Multi-Gate-Transistoren Apparatus and method for multi-gate transistors,
02/27/2014DE102012107816A1 Short-term annealing of first layer, which is applied on a substrate, comprises exposing first layer on one side, which is facing away from substrate, to light radiation by flash lamp through lightning pulse in short time
02/27/2014DE102012107797A1 Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauelements und Licht emittierendes Halbleiterbauelement A process for preparing a semiconductor light-emitting device and light-emitting semiconductor component
02/27/2014DE102012107669A1 Method for treating surface of pre-etched silicon wafer used for solar cell, involves contacting pre-etched surface of silicon wafer with alkaline-earth metal, and forming substructure on pre-etched surface
02/27/2014DE102012016568A1 Planar transducer such as isolation amplifier for galvanic separation between circuits, has layer structure whose sides are limited by magnetic layers that are separated from each other such that different potentials are assigned
02/27/2014DE102010029504B4 Bauelement mit einer Durchkontaktierung und Verfahren zu dessen Herstellung Component with a plated-through hole and process for its preparation
02/27/2014DE102008028528B4 Vorrichtung mit Photoresistmaterialstruktur und Verfahren zum Herstellen derselben Device with photoresist material structure and method of manufacturing the same
02/27/2014DE102005045636B4 Verfahren zur Herstellung eines Halbleiterspeicherbauelementes mit einer zum Ladungseinfang geeigneten Speicherschicht A method of manufacturing a semiconductor memory device with a form suitable for charge trapping storage layer
02/26/2014EP2701251A1 Nitride semiconductor laser and epitaxial substrate
02/26/2014EP2701202A2 High breakdown voltage semiconductor device with an insulated gate formed in a trench, and manufacturing process thereof
02/26/2014EP2701201A1 Semiconductor device and method for producing same
02/26/2014EP2701199A2 Nitride semiconductor and fabricating method thereof
02/26/2014EP2701197A1 Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methods
02/26/2014EP2701196A2 Semiconductor Device with an Inclined Source/Drain and Associated Methods
02/26/2014EP2701191A2 Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof
02/26/2014EP2701189A1 Method for self-assembly of substrates and devices obtained thereof
02/26/2014EP2701188A2 A method of singulating semiconductor die from a semiconductor wafer
02/26/2014EP2701187A2 Electronic Device including Shallow Trench Isolation (STI) Regions with Bottom Oxide Linear and Upper Nitride Liner and Related Methods
02/26/2014EP2701186A1 Electronic Device Including Shallow Trench Isolation (STI) Regions with Bottom Nitride Linear and Upper Oxide Linear and Related Methods
02/26/2014EP2701185A1 Method of transferring an InP film
02/26/2014EP2701184A1 COMPOUND GaN SUBSTRATE AND METHOD FOR PRODUCING SAME, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
02/26/2014EP2701182A2 Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device
02/26/2014EP2701181A2 Method for producing semiconductor components on a substrate and substrate with semiconductor components
02/26/2014EP2700739A1 Epitaxial silicon carbide single-crystal substrate and process for producing same
02/26/2014EP2700098A1 Multiple die face-down stacking for two or more die
02/26/2014EP2700097A1 Flip-chip, face-up and face-down wirebond combination package
02/26/2014EP2700093A1 A starting substrate for semiconductor engineering having substrate-through connections and a method for making same
02/26/2014EP2700092A1 Vias in porous substrates
02/26/2014EP2700091A1 A routing layer for mitigating stress in a semiconductor die
02/26/2014EP2700090A1 Interposer having molded low cte dielectric
02/26/2014EP2700089A2 Select devices
02/26/2014EP2700088A1 Methods and materials for lithography of a high resolution hsq resist
02/26/2014EP2700087A1 Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materials
02/26/2014EP2699873A1 Thin films and surface topography measurement using reduced library
02/26/2014EP2699711A1 Hot-wire method for depositing semiconductor material on a substrate and device for performing the method
02/26/2014CN203456489U Improved type solar energy silicon wafer stamp pad
02/26/2014CN203456464U An electroluminescent device
02/26/2014CN203456460U Array substrate and display device
02/26/2014CN203456450U 智能功率模块 Intelligent Power Module
02/26/2014CN203456431U Top pawl in sputtering device
02/26/2014CN203456430U 晶圆承载装置 Wafer carrying device
02/26/2014CN203456429U Automatic positioning device of cover plate
02/26/2014CN203456428U Material canister
02/26/2014CN203456427U Wafer electric property test ink dot duster
02/26/2014CN203456426U Single-face corrosion device suitable for semiconductor chip
02/26/2014CN203456425U Substrate processing apparatus
02/26/2014CN203456424U Temperature measuring device for rapid heat treatment equipment
02/26/2014CN203456423U Technology end point detector
02/26/2014CN203456422U Tool detecting back film viscosity of cut wafer
02/26/2014CN203456421U Bonding head apparatus applied to full-automatic lead bonding device
02/26/2014CN203448359U Upper pressing wheel assembly
02/26/2014CN103608937A Ultra small LED and method for manufacturing same
02/26/2014CN103608934A Process for producing photovoltaic cell having selective emitter
02/26/2014CN103608925A Methods of manufacturing thin film transistor devices
02/26/2014CN103608924A Oxide-type semiconductor material and sputtering target
02/26/2014CN103608923A Current aperture vertical electron transistors