Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
03/2014
03/13/2014US20140070414 Semiconductor plural gate lengths
03/13/2014US20140070412 Semiconductor Device and Method for Manufacturing the Same
03/13/2014US20140070408 Plating Structure For Wafer Level Packages
03/13/2014US20140070405 Stacked semiconductor devices with a glass window wafer having an engineered coefficient of thermal expansion and methods of making same
03/13/2014US20140070403 Packaging Methods and Packaged Devices
03/13/2014US20140070402 Stress Reduction Apparatus
03/13/2014US20140070401 Extrusion-resistant solder interconnect structures and methods of forming
03/13/2014US20140070398 Power semiconductor device and method of manufacturing the same
03/13/2014US20140070397 High power semiconductor package subsystems
03/13/2014US20140070395 Electronic device and manufacturing method thereof
03/13/2014US20140070393 Horizontally and vertically aligned graphite nanofibers thermal interface material for use in chip stacks
03/13/2014US20140070392 Common drain power clip for battery pack protection mosfet
03/13/2014US20140070391 Lead carrier with print-formed terminal pads
03/13/2014US20140070383 Pre-Molded MEMS Device Package with Conductive Shell
03/13/2014US20140070381 Semiconductor memory card
03/13/2014US20140070380 Bridge interconnect with air gap in package assembly
03/13/2014US20140070378 Method of fabricating a semiconductor device, semiconductor wafer, and apparatus for fabricating a semiconductor device
03/13/2014US20140070376 Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip arrangements
03/13/2014US20140070375 Electronic device including a via and a conductive structure, a process of forming the same, and an interposer
03/13/2014US20140070374 Semiconductor device and method of fabricating semiconductor device
03/13/2014US20140070373 Semiconductor hole structure
03/13/2014US20140070372 Semiconductor thin film structure and method of forming the same
03/13/2014US20140070369 Semiconductor device and semiconductor device manufacturing method
03/13/2014US20140070366 Semiconductor structure
03/13/2014US20140070365 Semiconductor devices with impedance matching-circuits, and methods of manufacture thereof
03/13/2014US20140070363 Electronic anti-fuse
03/13/2014US20140070362 E-fuse structures and methods of manufacture
03/13/2014US20140070361 Diffusion resistor with reduced voltage coefficient of resistance and increased breakdown voltage using cmos wells
03/13/2014US20140070358 Method of tailoring silicon trench profile for super steep retrograde well field effect transistor
03/13/2014US20140070357 Soi device with embedded liner in box layer to limit sti recess
03/13/2014US20140070356 Method for Protecting a Semiconductor Device Against Degradation and a Method for Manufacturing a Semiconductor Device Protected Against Hot Charge Carriers
03/13/2014US20140070337 Integrated circuit including an environmental sensor
03/13/2014US20140070333 Self aligned contact with improved robustness
03/13/2014US20140070332 Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures
03/13/2014US20140070329 Wireless module with active and passive components
03/13/2014US20140070328 Semiconductor device and method of fabricating the same
03/13/2014US20140070327 Replacement Metal Gate Process for CMOS Integrated Circuits
03/13/2014US20140070325 Semiconductor device and method for fabricating the same
03/13/2014US20140070322 Methods of forming different finfet devices with different threshold voltages and integrated circuit products containing such devices
03/13/2014US20140070321 Integrated circuits having boron-doped silicon germanium channels and methods for fabricating the same
03/13/2014US20140070316 Replacement source/drain for 3d cmos transistors
03/13/2014US20140070313 Power mosfet current sense structure and method
03/13/2014US20140070312 Semiconductor device and related fabrication methods
03/13/2014US20140070311 Semiconductor device and related fabrication methods
03/13/2014US20140070309 Semiconductor device and manufacturing method of the same
03/13/2014US20140070299 Sonos device and method for fabricating the same
03/13/2014US20140070294 Finfet trench circuit
03/13/2014US20140070292 Deep trench capacitor
03/13/2014US20140070285 Methods of forming semiconductor devices with self-aligned contacts and the resulting devices
03/13/2014US20140070284 Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition
03/13/2014US20140070283 Field effect transistor and method of fabrication
03/13/2014US20140070282 Self-aligned contacts
03/13/2014US20140070281 High voltage junction field effect transistor and manufacturing method thereof
03/13/2014US20140070265 Fast switching igbt with embedded emitter shorting contacts and method for making same
03/13/2014US20140070234 High voltage power semiconductor devices on sic
03/13/2014US20140070232 Method for Manufacturing a Composite Wafer Having a Graphite Core, and Composite Wafer Having a Graphite Core
03/13/2014US20140070231 Semiconductor device and method for making the same
03/13/2014US20140070230 Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device
03/13/2014US20140070229 Systems and methods for terminating junctions in wide bandgap semiconductor devices
03/13/2014US20140070226 Bondable top metal contacts for gallium nitride power devices
03/13/2014US20140070220 Array substrate, method for manufacturing the same and display device
03/13/2014US20140070215 Defect free strained silicon on insulator (ssoi) substrates
03/13/2014US20140070213 Methods for Discretized Processing and Process Sequence Integration of Regions of a Substrate
03/13/2014US20140070168 Electronic component, methods for manufacturing the same and use of graphene in an electronic component
03/13/2014US20140070159 Novel rram structure at sti with si-based selector
03/13/2014US20140069989 Thin Semiconductor Chip Mounting
03/13/2014US20140069844 Circuit board magazine having retention bar with a locking mechanism
03/13/2014US20140069584 Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode
03/13/2014US20140069488 Conductive member, method of producing the same, touch panel, and solar cell
03/13/2014US20140069467 Integrated cleaner and dryer system
03/13/2014US20140069334 Temperature control of semiconductor processing chambers by modulating plasma generation energy
03/13/2014US20140068962 Integrated processing of porous dielectric, polymer-coated substrates and epoxy within a multi-chamber vacuum system confirmation
03/13/2014US20140068923 Rotary positioning apparatus with dome carrier, automatic pick-and-place system, and operating method thereof
03/13/2014DE19700516B4 Einkristall-Ziehvorrichtung Single crystal pulling apparatus
03/13/2014DE112012002305T5 Verfahren für ein spontanes Spalling von Material bei niedriger Temperatur Method for an impromptu spalling of material at low temperature
03/13/2014DE112012002136T5 Halbleitervorrichtung Semiconductor device
03/13/2014DE112011105377T5 Plasmagerät des Atmosphärendrucks und dessen Herstellungsverfahren Atmospheric pressure plasma device and its manufacturing method
03/13/2014DE112011105319T5 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung A semiconductor device and method of manufacturing a semiconductor device
03/13/2014DE112011103351B4 Verfahren zur Herstellung von Halbleitervorrichtungen mit metallischen Ersatz-Gates A process for the production of semiconductor devices with metal replacement gate
03/13/2014DE112006002971B4 Verfahren zur Herstellung einer integrierten Schaltung A method of fabricating an integrated circuit
03/13/2014DE10359723B4 Vorrichtung und Verfahren zur Inspektion eines Wafers Apparatus and method for inspecting a wafer
03/13/2014DE10339920B4 Verfahren zum Herstellen eines integrierten Schaltungs-Feldeffekttransistors A method of fabricating an integrated circuit field effect transistor
03/13/2014DE102013215671A1 Mehrfach programmierbarer Speicher Multiple programmable memory
03/13/2014DE102013215392A1 Leistungshalbleitervorrichtung und Verfahren zu deren Herstellung Power semiconductor device and process for their preparation
03/13/2014DE102013112423A1 Component e.g. semiconductor chip, for use in electronic device, has insulating layer arranged above first metal coating, second metal coating applied above insulating layer, and ductile metal film arranged between metal coatings
03/13/2014DE102013109881A1 Verfahren zur Herstellung einer Chipanordnung, Verfahren zur Herstellung einer Chipbaugruppe, Chipbaugruppe und Chipanordnungen A method for producing a chip arrangement, method for producing a chip module, chip package and chip assemblies
03/13/2014DE102013109297A1 Halbleitervorrichtungen mit Stützmustern in Zwischenraumbereichen zwischen leitfähigen Mustern und Verfahren zum Herstellen derselben Semiconductor devices with support patterns in space areas between conductive patterns and methods of making the same
03/13/2014DE102013108987A1 Halbleitervorrichtungsbaugruppe und Verfahren für die Bildung einer Baugruppe hiervon A semiconductor device assembly and method for forming an assembly thereof,
03/13/2014DE102013108946A1 Halbleitervorrichtung, integrierte Schaltung und Herstellungsverfahren hierfür A semiconductor device, integrated circuit, and manufacturing method thereof
03/13/2014DE102013108585A1 Halbleitervorrichtung mit einer entspannungsschicht und herstellungsverfahren Semiconductor device having a relaxation layer and manufacturing processes
03/13/2014DE102013014881A1 Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren-Materialien Improved Through-silicon via with a filling of several materials
03/13/2014DE102012216086A1 Power electronics module used in e.g. automotive industry, has housing comprising first gap with cooling fluid between layer facing first inner surface of housing, and thermally conductive and electrically insulating layer
03/13/2014DE102012108522A1 Method for manufacturing semiconductor stack for stacking semiconductor chips with components for three-dimensional integration of electronic circuit, involves arranging through-contacts in aperture after connecting stack components
03/13/2014DE102012108413A1 Gehäuse für ein optoelektronisches Bauteil, Optoelektronisches Bauelement und Verfahren zur Herstellung des optoelektronischen Bauelements A housing for an optoelectronic device, optoelectronic component and method of manufacturing the optoelectronic component,
03/13/2014DE102012106566A9 Leistungshalbleiterchip mit zwei Metallschichten auf einer Fläche Power semiconductor chip with two metal layers on a surface
03/13/2014DE102012018013A1 Planar helical coil e.g. three spiral superposed coils, has central terminal made by semiconductor substrate using metal one-semiconductor contacts in external supplying unit, where metal one-semiconductor contacts are provided at coil
03/13/2014DE102012016449A1 Prüfkopf für die elektrische Prüfung eines Prüflings Probe for electrical testing a device under test
03/13/2014DE102010038641B4 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Semiconductor device and process for their preparation
03/13/2014DE102008013513B4 Bauteil mit dielektrischer Komponente mit hoher relativer Permittivität, seine Verwendung und kristallines Substrat mit integrierten Schaltungen Component dielectric component with high relative permittivity, its use and crystalline substrate with integrated circuits
03/13/2014DE102008007222B4 Halbleitervorrichtung mit Störstellen dotiertem Widerstandselement A semiconductor device having impurity doped resistive element
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