Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
04/2007
04/17/2007US7204735 Production apparatus and method of producing a light-emitting device by using the same apparatus
04/17/2007US7204686 Parallelism adjustment device
04/17/2007US7204679 Flow control system
04/17/2007US7204669 Semiconductor substrate damage protection system
04/17/2007US7204017 Manufacturing method of a modularized leadframe
04/17/2007CA2373134C Method of forming a polymer chain
04/12/2007WO2007041595A2 Iii-nitride semiconductor fabrication
04/12/2007WO2007041504A1 High density, high q capacitor on top of protective layer
04/12/2007WO2007041454A2 Systems and methods for determination of endpoint of chamber cleaning processes
04/12/2007WO2007041423A1 Vertical profile fixing
04/12/2007WO2007041280A2 Methods of and apparatuses for measuring electrical parameters of a plasma process
04/12/2007WO2007041262A2 Method of fabricating reflective spatial light modulator having high contrast ratio
04/12/2007WO2007041237A2 Microelectronic assembly and method for forming the same
04/12/2007WO2007041203A1 Method for controlling polysilicon removal
04/12/2007WO2007041152A1 Narrow-body multiple-gate fet with dominant body transistor for high performance
04/12/2007WO2007041124A1 Amine-free deposition of metal-nitride films
04/12/2007WO2007041108A1 Contact spacer formation using atomic layer deposition
04/12/2007WO2007041040A2 Gate dielectric material having reduced metal content
04/12/2007WO2007041029A2 Sram cell with asymmetrical transistors for reduced leakage
04/12/2007WO2007040992A2 Microelectronic assembly and method for forming the same
04/12/2007WO2007040991A2 Magnetic tunnel junction temperature sensors and methods
04/12/2007WO2007040956A1 Composition and method for enhancing pot life of hydrogen peroxide-containing cmp slurries
04/12/2007WO2007040860A1 Technique for forming a copper-based metallization layer including a conductive capping layer
04/12/2007WO2007040856A2 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system
04/12/2007WO2007040845A2 A method of forming an oxide layer
04/12/2007WO2007040834A2 Plural treatment step process for treating dielectric films
04/12/2007WO2007040816A2 Treatment of low dielectric constant films using a batch processing system
04/12/2007WO2007040759A1 Thin-film transistor and method of making the same
04/12/2007WO2007040752A2 Process and system for etching doped silicon using sf6-based chemistry
04/12/2007WO2007040749A2 A method of forming a silicon oxynitride film with tensile stress
04/12/2007WO2007040717A2 Process and system for etching doped silicon
04/12/2007WO2007040716A2 Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon
04/12/2007WO2007040710A1 Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same
04/12/2007WO2007040709A1 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen
04/12/2007WO2007040704A1 Method for integrating a ruthenium layer with bulk copper in copper metallization
04/12/2007WO2007040688A2 Cmos process for fabrication of ultra small or non standard size or shape semiconductor die
04/12/2007WO2007040679A2 Method and apparatus for forming nickel silicide with low defect density in fet devices
04/12/2007WO2007040627A1 Wavelength-converting light-emitting devices
04/12/2007WO2007040596A1 Method for purifying a metal carbonyl precursor
04/12/2007WO2007040587A2 Method for forming a multiple layer passivation film and a deice
04/12/2007WO2007040496A1 Silicon germanium semiconductive alloy and method of fabricating same
04/12/2007WO2007040473A1 Minimization of interfacial resistance across thermoelectric devices by surface modification of the thermoelectric material
04/12/2007WO2007040295A1 (al, ga, in)n-based compound semiconductor and method of fabricating the same
04/12/2007WO2007040278A1 Treatment system, and its running method
04/12/2007WO2007040255A1 Semiconductor substrate and method for manufacturing same
04/12/2007WO2007040254A1 Exposure apparatus and exposure method
04/12/2007WO2007040194A1 Tft substrate and method for manufacturing tft substrate
04/12/2007WO2007040190A1 Semiconductor chip cutting method and semiconductor chip
04/12/2007WO2007040189A1 Magnetic random access memory, and its actuation method
04/12/2007WO2007040183A1 Silicon-based thin film photoelectric converter, and method and apparatus for manufacturing same
04/12/2007WO2007040181A1 Method and apparatus for controlling expanding apparatus
04/12/2007WO2007040167A1 Magnetic random access memory
04/12/2007WO2007040160A1 Field effect transistor
04/12/2007WO2007040110A1 Plasma processing apparatus and plasma processing method
04/12/2007WO2007040066A1 Writing method and device
04/12/2007WO2007040062A1 Substrate processing apparatus and method for manufacturing semiconductor device
04/12/2007WO2007040057A1 Semiconductor device
04/12/2007WO2007040049A1 Substrate cleaning apparatus, substrate cleaning method, substrate cleaning program and program recording medium
04/12/2007WO2007040047A1 Thin board holding container and processing apparatus for thin board holding container
04/12/2007WO2007040033A1 Cooling system, operation method for the cooling system, and plasma processing system using the cooling system
04/12/2007WO2007040032A1 Transfer device and transfer method
04/12/2007WO2007040002A1 Method for producing semiconductor wafer and system for determining cutting position of semiconductor ingot
04/12/2007WO2007039989A1 Positive resist composition and method for formation of resist patterns
04/12/2007WO2007039961A1 Board storing cassette
04/12/2007WO2007039960A1 Wiring board and display device provided with same
04/12/2007WO2007039959A1 Wiring board and display device provided with same
04/12/2007WO2007039954A1 Thin film transistor array substrate fabrication method and thin film transistor array substrate
04/12/2007WO2007039881A2 Semiconductor soi device
04/12/2007WO2007039880A2 Electrostatic discharge protection device
04/12/2007WO2007039560A1 Device for recording an image of at least one surface of a disk-shaped object in the semiconductor industry
04/12/2007WO2007039385A1 Metal interconnect structure for a microelectronic element
04/12/2007WO2007039333A1 Highly manufacturable sram cells in substrates with hybrid crystal orientation
04/12/2007WO2007039312A1 Arrangement with two transistors and method for the production thereof
04/12/2007WO2007039227A1 Method for generation of metal surface structures and apparatus therefor
04/12/2007WO2007038950A1 Method for generation of metal surface structures and apparatus therefor
04/12/2007WO2007024186A3 Interconnects and heat dissipators based on nanostructures
04/12/2007WO2007022302A3 High throughput crystallization of thin films
04/12/2007WO2007019342A3 High throughput chemical mechanical polishing composition for metal film planarization
04/12/2007WO2007008705A3 Uniform batch film deposition process and films so produced
04/12/2007WO2007006504A3 Power field effect transistor and manufacturing method thereof
04/12/2007WO2007005697A3 Block contact architectures for nanoscale channel transistors
04/12/2007WO2007002673A3 Beta-diketiminate ligand sources and metal-containing compounds thereof, and systems and methods including same
04/12/2007WO2007000718A3 Doping profile improvement of in-situ doped n-type emitters
04/12/2007WO2007000697A3 Method of manufacturing an assembly and assembly
04/12/2007WO2007000695A3 Package, subassembly and methods of manufacturing thereof
04/12/2007WO2007000537A3 Surface processing after selective etching
04/12/2007WO2006133039A3 Workpiece handling alignment system
04/12/2007WO2006132381A3 Functional film containing structure and method of manufacturing functional film
04/12/2007WO2006130801A3 Tft charge storage memory cell having high-mobility corrugated channel and method of manufacturing the same
04/12/2007WO2006128102A3 Self-repair and enhancement of nanostructures by liquification under guiding conditions
04/12/2007WO2006127227A3 Gallium nitride based structures including substrates and manufacturing methods thereof
04/12/2007WO2006124255A3 System and methods for polishing a wafer
04/12/2007WO2006118851A3 Method of making scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s)
04/12/2007WO2006110871A8 Thin film resistor head structure and method for reducing head resistivity variance
04/12/2007WO2006107417A3 Method and system for forming a high-k dielectric layer
04/12/2007WO2006103634A3 Asymmetric high voltage mos device and method of fabrication
04/12/2007WO2006083993A3 Fabrication process for increased capacitance in an embedded dram memory
04/12/2007WO2006076152A3 Light emitting diode with conducting metal substrate
04/12/2007WO2006076085A3 Low-pressure removal of photoresist and etch residue
04/12/2007WO2006065630A3 Reduction of etch mask feature critical dimensions