Patents
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2010
02/18/2010WO2009137395A3 Slit valve having increased flow uniformity
02/18/2010WO2009135182A3 Combinatorial plasma enhanced deposition techniques
02/18/2010WO2009135144A3 Substrate container sealing via movable magnets
02/18/2010WO2009135137A3 System for non radial temperature control for rotating substrates
02/18/2010WO2009135072A3 Non-volatile resistive-switching memories
02/18/2010WO2009135066A3 End effector to substrate offset detection and correction
02/18/2010WO2009135050A3 Process kit for rf physical vapor deposition
02/18/2010WO2009134865A3 Endpoint detection in chemical mechanical polishing using multiple spectra
02/18/2010WO2009134810A3 Vanadium oxide thin films
02/18/2010WO2009134031A3 Rigid dual-servo nano stage
02/18/2010WO2009132181A3 Low profile process kit
02/18/2010WO2009132004A3 Multi-rate resist method to form organic tft electrode and electrodes formed by same
02/18/2010WO2009131945A3 High throughput chemical mechanical polishing system
02/18/2010WO2009131889A3 Method and apparatus for excimer curing
02/18/2010WO2009129049A3 Methods of making lateral junction field effect transistors using selective epitaxial growth
02/18/2010WO2009120706A3 Autofocus method and apparatus for wafer scribing
02/18/2010WO2006060599A3 Semiconductor devices based on coalesced nano-rod arrays
02/18/2010US20100042253 Wafer carrier handling methods, systems and apparatus for semiconductor wafer fabrication
02/18/2010US20100041907 Hydrazine-free solution deposition of chalcogenide films
02/18/2010US20100041317 Workpiece processing method
02/18/2010US20100041248 Multi-step system and method for curing a dielectric film
02/18/2010US20100041247 Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
02/18/2010US20100041246 Cleaving Of Substrates
02/18/2010US20100041245 Hdp-cvd process, filling-in process utilizing hdp-cvd, and hdp-cvd system
02/18/2010US20100041244 Hafnium tantalum oxynitride dielectric
02/18/2010US20100041243 Precursors for Depositing Silicon-containing Films and Methods for Making and Using Same
02/18/2010US20100041242 Double Anneal with Improved Reliability for Dual Contact Etch Stop Liner Scheme
02/18/2010US20100041241 High density plasma dielectric desposition for void free gap fill
02/18/2010US20100041240 Focus ring, plasma processing apparatus and plasma processing method
02/18/2010US20100041239 Diffractive Optical Element, Lithographic Apparatus and Semiconductor Device Manufacturing Method
02/18/2010US20100041238 Tunable multi-zone gas injection system
02/18/2010US20100041237 Method for forming a fine pattern using isotropic etching
02/18/2010US20100041236 Novel method to integrate gate etching as all-in-one process for high k metal gate
02/18/2010US20100041235 Manufacturing method of semiconductor devices
02/18/2010US20100041234 Process For Restoring Dielectric Properties
02/18/2010US20100041233 Fabrication methods for integration cmos and bjt devices
02/18/2010US20100041232 Adjustable dummy fill
02/18/2010US20100041231 FUSI Integration Method Using SOG as a Sacrificial Planarization Layer
02/18/2010US20100041230 Methods for forming copper interconnects for semiconductor devices
02/18/2010US20100041229 Method and fabricating semiconductor device and semiconductor device
02/18/2010US20100041228 Method of manufacturing a wiring board
02/18/2010US20100041227 Methods for incorporating high dielectric materials for enhanced sram operation and structures produced thereby
02/18/2010US20100041226 Process For Through Silicon Via Filing
02/18/2010US20100041225 Structure, design structure and method of manufacturing dual metal gate vt roll-up structure
02/18/2010US20100041224 Non-volatile memory device and method of manufacturing the same
02/18/2010US20100041223 Method of integrating high-k/metal gate in cmos process flow
02/18/2010US20100041222 SONOS Type Stacks for Nonvolatile ChangeTrap Memory Devices and Methods to Form the Same
02/18/2010US20100041221 High performance cmos circuits, and methods for fabricating same
02/18/2010US20100041220 Methods for uniformly optically annealing regions of a semiconductor substrate
02/18/2010US20100041219 Usj techniques with helium-treated substrates
02/18/2010US20100041218 Usj techniques with helium-treated substrates
02/18/2010US20100041217 Method of synthesizing silicon wires
02/18/2010US20100041216 Method of manufacturing nitride semiconductor substrate
02/18/2010US20100041215 Methods for preparation of high-purity polysilicon rods using a metallic core means
02/18/2010US20100041214 Single crystal substrate and method of fabricating the same
02/18/2010US20100041213 Vapor Deposition Reactor For Forming Thin Film
02/18/2010US20100041212 Film forming method and film forming apparatus
02/18/2010US20100041211 Laminate body, method, and apparatus for manufacturing ultrathin substrate using the laminate body
02/18/2010US20100041210 Method of processing optical device wafer
02/18/2010US20100041209 Method for manufacturing semiconductor device
02/18/2010US20100041208 Semiconductor device manufactured with a double shallow trench isolation process
02/18/2010US20100041207 High density plasma gapfill deposition-etch-deposition process using fluorocarbon etchant
02/18/2010US20100041206 Method of manufacturing a nonvolatile semiconductor memory device
02/18/2010US20100041205 Method for simultaneously tensile and compressive straining the channels of nmos and pmos transistors respectively
02/18/2010US20100041204 Methods Of Making Capacitors, DRAM Arrays and Electronic Systems
02/18/2010US20100041203 Structure, Design Structure and Method of Manufacturing a Structure Having VIAS and High Density Capacitors
02/18/2010US20100041202 Methods For Forming Back-End-Of-Line Resistive Semiconductor Structures
02/18/2010US20100041201 Methods of Fabricating MOS Transistors Having Recesses with Elevated Source/Drain Regions
02/18/2010US20100041200 Semiconductor transistor device and method for manufacturing the same
02/18/2010US20100041199 Field effect transistor with suppressed corner leakage through channel material band-edge modulation, design structure and method
02/18/2010US20100041198 Triple gate and double gate finfets with different vertical dimension fins
02/18/2010US20100041197 Method of manufacturing a semiconductor device including recessed-channel-array mosfet having a higher operational speed
02/18/2010US20100041196 Method for Fabricating a Transistor having a Recess Gate Structure
02/18/2010US20100041195 Method of manufacturing silicon carbide self-aligned epitaxial mosfet for high powered device applications
02/18/2010US20100041194 Semiconductor device with split gate memory cell and fabrication method thereof
02/18/2010US20100041193 Nonvolatile semiconductor memory device and method of manufacturing the same
02/18/2010US20100041192 Method For Preparing Multi-Level Flash Memory Structure
02/18/2010US20100041191 Split-gate dram with mugfet, design structure, and method of manufacture
02/18/2010US20100041190 Semiconductor device and method for manufacturing the same
02/18/2010US20100041189 Selective removal of a silicon oxide layer
02/18/2010US20100041188 Robust transistors with fluorine treatment
02/18/2010US20100041187 Semiconductor device and method for forming the same
02/18/2010US20100041186 Impact ionisation mosfet method
02/18/2010US20100041185 Method of producing a field effect transistor arrangement
02/18/2010US20100041184 Molding apparatus for manufacturing a semiconductor device and method using the same
02/18/2010US20100041183 Semiconductor device and manufacturing method thereof
02/18/2010US20100041182 Method, system, and apparatus for a secure bus on a printed circuit board
02/18/2010US20100041181 Heat dissipating package structure and method for fabricating the same
02/18/2010US20100041180 Methods of Forming Semiconductor Constructions and Assemblies
02/18/2010US20100041179 Forming Substrate Structure by Filling Recesses with Deposition Material
02/18/2010US20100041175 Method of purifying a crystalline silicon substrate and process for producing a photovoltaic cell
02/18/2010US20100041173 Method of fabricating light emiting diode chip
02/18/2010US20100040988 Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings
02/18/2010US20100040985 Fine mold and method for regenerating fine mold
02/18/2010US20100040980 Method and apparatus for reforming film and controlling slimming amount thereof
02/18/2010US20100040965 Exposure control for phase shifting photolithographic masks
02/18/2010US20100040891 Hydrazine-free solution deposition of chalcogenide films
02/18/2010US20100040866 Hydrazine-free solution deposition of chalcogenide films
02/18/2010US20100040802 Method and apparatus for production of metal film or the like
02/18/2010US20100040514 Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same