Patents
Sitemap › H01 - Basic electric elements › H01L - Semiconductor devices; Electric solid state devices not otherwise provided for › H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
02/2010
02/11/2010US20100032836 Enhanced reliability for semiconductor devices using dielectric encasement
02/11/2010US20100032835 Combination via and pad structure for improved solder bump electromigration characteristics
02/11/2010US20100032834 Method for forming bumps in substrates with through vias
02/11/2010US20100032833 Semiconductor device and method of manufacturing the same
02/11/2010US20100032830 Three-dimensional conducting structure and method of fabricating the same
02/11/2010US20100032829 Structures and methods for improving solder bump connections in semiconductor devices
02/11/2010US20100032828 Semiconductor assembly with component attached on die back side
02/11/2010US20100032824 IC Package Method Capable of Decreasing IR Drop and Associated IC Apparatus
02/11/2010US20100032823 Semiconductor device and method of fabricating the same
02/11/2010US20100032820 Stacked Memory Module
02/11/2010US20100032819 Compact Co-packaged Semiconductor Dies with Elevation-adaptive Interconnection Plates
02/11/2010US20100032818 Lead frame package
02/11/2010US20100032817 Semiconductor device with plastic package molding compound, semiconductor chip and leadframe and method for producing the same
02/11/2010US20100032816 Electronic Device and Method of Manufacturing Same
02/11/2010US20100032815 Semiconductor device packages with electromagnetic interference shielding
02/11/2010US20100032814 Circuit structures and methods with beol layers configured to block electromagnetic edge interference
02/11/2010US20100032813 Ic formed with densified chemical oxide layer
02/11/2010US20100032812 Method for forming silicon germanium layers at low temperatures, layers formed therewith and structures comprising such layers
02/11/2010US20100032811 Through wafer vias and method of making same
02/11/2010US20100032810 Through wafer vias and method of making same
02/11/2010US20100032809 Metal wiring structure for integration with through substrate vias
02/11/2010US20100032808 Through wafer via and method of making same
02/11/2010US20100032806 Epitaxial silicon wafer and production method thereof
02/11/2010US20100032805 Methods and structures for relaxation of strained layers
02/11/2010US20100032804 High voltage bipolar transistor and method of fabrication
02/11/2010US20100032803 Capacitor contact formed concurrently with bond pad metallization
02/11/2010US20100032802 Assembling of Electronic Members on IC Chip
02/11/2010US20100032801 Capacitor formed in interlevel dielectric layer
02/11/2010US20100032799 Implementing Decoupling Capacitors With Hot-Spot Thermal Reduction on Integrated Circuit Chips
02/11/2010US20100032794 High voltage diode with reduced substrate injection
02/11/2010US20100032793 Methods for relaxation and transfer of strained layers and structures fabricated thereby
02/11/2010US20100032792 Semiconductor device and method of manufacturing the same
02/11/2010US20100032791 Semiconductor device and method of manufacturing the same
02/11/2010US20100032789 Passive temperature compensation of silicon mems devices
02/11/2010US20100032785 Solid-state imaging device and method for manufacturing the same
02/11/2010US20100032779 Semiconductor device and method of manufacturing the same
02/11/2010US20100032777 Magnetic memory cell construction
02/11/2010US20100032775 Thin-film lid mems devices and methods
02/11/2010US20100032774 Low cost high voltage power fet and fabrication
02/11/2010US20100032773 Semiconductor Devices and Methods for Manufacturing a Semiconductor Device
02/11/2010US20100032771 Short-channel schottky-barrier mosfet device and manufacturing method
02/11/2010US20100032770 Ic resistor formed with integral heatsinking structure
02/11/2010US20100032769 Implanted well breakdown in high voltage devices
02/11/2010US20100032768 Transistor of image sensor and method for manufacturing the same
02/11/2010US20100032767 Structure and method of latchup robustness with placement of through wafer via within cmos circuitry
02/11/2010US20100032766 Bipolar Junction Transistor with a Reduced Collector-Substrate Capacitance
02/11/2010US20100032764 Through silicon via and method of fabricating same
02/11/2010US20100032763 Multiple-gate transistors and processes of making same
02/11/2010US20100032760 Thin-film transistor substrate and method of fabricating the same
02/11/2010US20100032759 self-aligned soi schottky body tie employing sidewall silicidation
02/11/2010US20100032757 Bi-directional dmos with common drain
02/11/2010US20100032756 Buried floating layer structure for improved breakdown
02/11/2010US20100032754 Semiconductor device and method of manufacturing the semiconductor device
02/11/2010US20100032753 MOS Transistor Including Extended NLDD Source-Drain Regions For Improved Ruggedness
02/11/2010US20100032752 Semiconductor device and method of manufacturing the same
02/11/2010US20100032751 Super-self-aligned trench-dmos structure and method
02/11/2010US20100032750 Power Semiconductor Device And Method Therefor
02/11/2010US20100032749 Field-Effect Device and Manufacturing Method Thereof
02/11/2010US20100032748 CMOS Thermoelectric Refrigerator
02/11/2010US20100032747 Semiconductor memory device and method for manufacturing the same
02/11/2010US20100032746 Use of dilute steam ambient for improvement of flash devices
02/11/2010US20100032745 Semiconductor device and fabricating method thereof
02/11/2010US20100032744 Reduced Area Single Poly EEPROM
02/11/2010US20100032742 Integrated circuits comprising an active transistor electrically connected to a trench capacitor by an overlying contact and methods of making
02/11/2010US20100032741 Semiconductor device and a method of manufacturing the same
02/11/2010US20100032740 Semiconductor device and method of manufacturing the same
02/11/2010US20100032739 Methods Of Forming Vertical Field Effect Transistors, vertical field effect transistors, and dram cells
02/11/2010US20100032737 Nano-magnetic memory device and method of manufacturing the device
02/11/2010US20100032736 Solid-state imaging device and method for manufacturing same
02/11/2010US20100032733 Semiconductor device and manufacturing method thereof
02/11/2010US20100032732 Electrical antifuse having a multi-thickness dielectric layer
02/11/2010US20100032730 Semiconductor device and method of making the same
02/11/2010US20100032729 Integration of high voltage jfet in linear bipolar cmos process
02/11/2010US20100032728 Area efficient 3d integration of low noise jfet and mos in linear bipolar cmos process
02/11/2010US20100032727 Border region defect reduction in hybrid orientation technology (hot) direct silicon bonded (dsb) substrates
02/11/2010US20100032725 Semiconductor memory device and method of manufacturing the same
02/11/2010US20100032719 Probes for scanning probe microscopy
02/11/2010US20100032717 Devices based on si/nitride structures
02/11/2010US20100032715 Mos transistor and method for fabricating the same
02/11/2010US20100032713 Lateral insulated gate bipolar transistor
02/11/2010US20100032712 Power semiconductor device and a method of forming a power semiconductor device
02/11/2010US20100032711 Semiconductor device and method of manufacturing the same
02/11/2010US20100032707 Semiconductor device and method for making the same
02/11/2010US20100032706 Wafer level led package structure for increasing conductive area and heat-dissipating area and method for making the same
02/11/2010US20100032686 Bipolar Semiconductor Device, Method for Producing the Same, and Method for Controlling Zener Voltage
02/11/2010US20100032685 Mesa termination structures for power semiconductor devices and methods of forming power semiconductor devices with mesa termination structures
02/11/2010US20100032682 Large area thin freestanding nitride layers and their use as circuit layers
02/11/2010US20100032681 Display device and manufacturing method thereof
02/11/2010US20100032680 Display device and manufacturing method thereof
02/11/2010US20100032678 Light emitting display device and method for fabricating the same
02/11/2010US20100032676 Semiconductor integrated circuit device and a manufacturing method for the same
02/11/2010US20100032675 Component Comprising a Thin-Film Transistor and CMOS-Transistors and Methods for Production
02/11/2010US20100032671 Degradation correction for finfet circuits
02/11/2010US20100032670 Electrical test structure to detect stress induced defects using diodes
02/11/2010US20100032668 Semiconductor device and method for manufacturing the same
02/11/2010US20100032667 Semiconductor device and method for manufacturing the same
02/11/2010US20100032666 Semiconductor device and manufacturing method thereof
02/11/2010US20100032665 Semiconductor device and method for manufacturing the same
02/11/2010US20100032664 Thin film transistor substrate and a fabricating method thereof
02/11/2010US20100032662 Organic Thin Film Transistors
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