H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Patents for H01L 21 - Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (658,974)
12/2011
12/01/2011	US20110291243 Planarizing etch hardmask to increase pattern density and aspect ratio
12/01/2011	US20110291242 Semiconductor device and method of manufacturing the same
12/01/2011	US20110291240 Power storage device and method for manufacturing the same
12/01/2011	US20110291237 Lanthanide dielectric with controlled interfaces
12/01/2011	US20110291235 Copper interconnection structure with mim capacitor and a manufacturing method thereof
12/01/2011	US20110291234 Semiconductor circuit structure and method of making the same
12/01/2011	US20110291233 Semiconductor device with integrated antenna and manufacturing method therefor
12/01/2011	US20110291232 3D Inductor and Transformer
12/01/2011	US20110291231 Method of manufacturing a semiconductor component and structure
12/01/2011	US20110291229 Semiconductor integrated circuit and method for fabricating the same
12/01/2011	US20110291228 Package structure and method for making the same
12/01/2011	US20110291226 Compound Semiconductor Device and Method for Fabricating the Same
12/01/2011	US20110291225 Semiconducture Structure and Method of Forming the Semiconductor Structure that Provides Two Individual Resistors or a Capacitor
12/01/2011	US20110291210 Betavoltaic power converter die stacking
12/01/2011	US20110291207 Transducer devices having different frequencies based on layer thicknesses and method of fabricating the same
12/01/2011	US20110291206 Semiconductor Device and Method of Manufacturing a Semiconductor Device
12/01/2011	US20110291204 Semiconductor device having sti with nitride liner and uv light shielding film
12/01/2011	US20110291203 Semiconductor device and method for manufacturing the same
12/01/2011	US20110291202 Device and method of reducing junction leakage
12/01/2011	US20110291201 Multi-strained source/drain structures
12/01/2011	US20110291198 Scaled Equivalent Oxide Thickness for Field Effect Transistor Devices
12/01/2011	US20110291197 Integrated circuits and manufacturing methods thereof
12/01/2011	US20110291196 Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate
12/01/2011	US20110291193 High density butted junction cmos inverter, and making and layout of same
12/01/2011	US20110291192 Increasing body dopant uniformity in multi-gate transistor devices
12/01/2011	US20110291190 System and method for integrated circuits with cylindrical gate structures
12/01/2011	US20110291189 Thin channel device and fabrication method with a reverse embedded stressor
12/01/2011	US20110291188 Strained finfet
12/01/2011	US20110291186 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts
12/01/2011	US20110291185 Semiconductor Device Having an Edge Termination Structure and Method of Manufacture Thereof
12/01/2011	US20110291184 Semiconductor structure and method for manufacturing the same
12/01/2011	US20110291183 Power semiconductor device having low gate input resistance and manufacturing method thereof
12/01/2011	US20110291182 Semiconductor device and method for forming the same
12/01/2011	US20110291181 Semiconductor device and method for manufacturing same
12/01/2011	US20110291180 Angled ion implantation in a semiconductor device
12/01/2011	US20110291178 Semiconductor device and method for manufacturing same
12/01/2011	US20110291177 Nonvolatile memory device and method for fabricating the same
12/01/2011	US20110291176 Non-volatile memory device and method for fabricating the same
12/01/2011	US20110291174 Nonvolatile semiconductor memory device and method of manufacturing the same
12/01/2011	US20110291171 Varactor
12/01/2011	US20110291170 Semiconductor Device Comprising a Buried Capacitor Formed in the Contact Level
12/01/2011	US20110291169 Reduced corner leakage in soi structure and method
12/01/2011	US20110291166 Integrated circuit with finfets and mim fin capacitor
12/01/2011	US20110291163 Reduction of Defect Rates in PFET Transistors Comprising a Si/Ge Semiconductor Material Formed by Epitaxial Growth
12/01/2011	US20110291147 Ohmic contacts for semiconductor structures
12/01/2011	US20110291123 Method for producing a plurality of led illumination devices and a plurality of led chipsets for illumination devices, and led illumintation device
12/01/2011	US20110291111 Semiconductor device and semiconductor device manufacturing method
12/01/2011	US20110291110 Silicon carbide semiconductor device and method of manufacturing the same
12/01/2011	US20110291107 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making
12/01/2011	US20110291105 Semiconductor module and method of manufacturing the same
12/01/2011	US20110291104 Smoothing method for semiconductor material and wafers produced by same
12/01/2011	US20110291100 Device and method for fabricating thin semiconductor channel and buried strain memorization layer
12/01/2011	US20110291092 Field effect transistor and method for manufacturing the same
12/01/2011	US20110291089 Method for manufacturing semiconductor device
12/01/2011	US20110291075 Field effect transistor, method for manufacturing the same, and biosensor
12/01/2011	US20110291074 Semi-Polar Nitride-Based Light Emitting Structure and Method of Forming Same
12/01/2011	US20110291069 Light-emitting devices and methods of manufacturing the same
12/01/2011	US20110291068 Field effect transistor manufacturing method, field effect transistor, and semiconductor graphene oxide manufacturing method
12/01/2011	US20110291065 Phase change memory cell structures and methods
12/01/2011	US20110291064 Resistance variable memory cell structures and methods
12/01/2011	US20110290701 Workpiece carrier and workpiece carrier loading/unloading system and method
12/01/2011	US20110290545 Through wiring board and method of manufacturing the same
12/01/2011	US20110290322 Substrate with transparent conductive film and thin film photoelectric conversion device
12/01/2011	US20110290294 Device for converting energy and method for manufacturing the device, and electronic apparatus with the device
12/01/2011	US20110290293 Thermoelectric module and method for manufacturing the same
12/01/2011	US20110290183 Plasma Uniformity Control By Gas Diffuser Hole Design
12/01/2011	US20110290182 Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
12/01/2011	US20110290174 One hundred millimeter single crystal silicon carbide wafer
12/01/2011	US20110290134 Imprint mask, method for manufacturing the same, and method for manufacturing semiconductor device
12/01/2011	US20110290037 Contact force sensor
12/01/2011	DE19806045B4 Verfahren zum Herstellen von einkristallinen Siliziumstäben unter Steuern desZiehgeschwindigkeitsverlaufs in einem Heißzonenofen A method of producing single crystal silicon rods Controlling desZiehgeschwindigkeitsverlaufs in a hot zone furnace
12/01/2011	DE112004001117B4 Halbleiterbauelement und Verfahren zur Herstellung A semiconductor device and method for producing
12/01/2011	DE10393949T5 Lichtemittierende Vorrichtung, Verfahren zum Herstellen der Vorrichtung und LED-Lampe, bei der die Vorrichtung verwendet wird A light emitting device, method for manufacturing the device and LED lamp, wherein the device is used
12/01/2011	DE102011102594A1 Strukturierter Monokristall Structured monocrystal
12/01/2011	DE102011017813A1 Verfahren zum Herstellen einer Halbleitervorrichtung A method of manufacturing a semiconductor device
12/01/2011	DE102011011911A1 Polierzusammensetzung und diese verwendendes Polierverfahren Polishing composition and polishing method-use these
12/01/2011	DE102011006445A1 Halbleitermodul und Verfahren zum Herstellen desselben The same semiconductor module and method of producing
12/01/2011	DE102011001770A1 Verfahren und System zum Ausbilden eines dünnen Halbleiterbauelements Method and system for forming a thin semiconductor device
12/01/2011	DE102010029550A1 Verfahren zur Herstellung von Halbleiter-Bauelementen und entsprechendes Halbleiter-Bauelement Process for the preparation of semiconductor devices and corresponding semiconductor device
12/01/2011	DE102010029532A1 Transistor mit eingebettetem verformungsinduzierenden Material, das in diamantförmigen Aussparungen auf der Grundlage einer Voramorphisierung hergestellt ist Transistor with embedded strain-inducing material that is produced in diamond-shaped cutouts on the basis of a pre-amorphization
12/01/2011	DE102010029531A1 Verringerung der Defektraten in PFET-Transistoren mit einem Si/Ge-Halbleitermaterial, das durch epitaktisches Wachsen hergestellt ist Reduction in the defect rate in PFET transistors with an Si / Ge-type semiconductor material, which is made by epitaxial growth
12/01/2011	DE102010029528A1 Halbleiterbauelement mit einer Chipumrandung mit gradueller Strukturdichte A semiconductor device comprising a chip outline structure with gradual density
12/01/2011	DE102010029527A1 Selbstjustierender Transistor mit Mehrfachgate, der auf einem Vollsubstrat ausgebildet ist Self-aligning multi-gate transistor which is formed on a solid substrate
12/01/2011	DE102010029525A1 Halbleiterbauelement mit einem vergrabenen Kondensator, der in der Kontaktebene ausgebildet ist A semiconductor device having a buried capacitor is formed in the contact plane
12/01/2011	DE102010029522A1 Verspannungsverringerung beim Einbringen eines Chips in ein Gehäuse mittels eines um den Chip herum ausgebildeten Spannungskompensationsgebiets Tension reduction during the introduction of a chip into a housing by means of a trained around the chip voltage compensation area
12/01/2011	DE102010029521A1 Chipgehäuse mit mehreren Abschnitten zum Verringern der Chip-Gehäuse-Wechselwirkung Chip package with multiple sections to reduce the chip package interaction
12/01/2011	DE102010029504A1 Bauelement mit einer Durchkontaktierung und Verfahren zu dessen Herstellung Component with a plated-through hole and process for its preparation
12/01/2011	DE102010029302A1 Method for producing thin chips of electronic device, involves forming notch-like break section between bottom portion and upper area of semiconductor substrate and layer structure according to overlapping of doping regions
12/01/2011	DE102010029290A1 Optical receiver structure for infrared camera e.g. surveillance camera to car drivers during night time, has trenches extended on top surface of active layer such that portions of contact layer are arranged by trenches
12/01/2011	DE102010021765A1 Anordnung zweier Verbindungspartner mit einer Niedertemperatur Druckinterverbindung Herstellungsverfahren hierzu Arrangement of two link partners with a low-temperature pressure sintering connect method therefor
12/01/2011	DE102010021764A1 Verfahren zur Niedertemperatur Drucksinterverbindung zweier Verbindungspartner und hiermit hergestellte Anordnung Method for low temperature pressure sintering connection of two link partners and hereby made arrangement
12/01/2011	DE102010017082A1 Vorrichtung und Verfahren zum Be- und Entladen, insbesondere einer Beschichtungseinrichtung Apparatus and method for loading and unloading, in particular a coating device
12/01/2011	DE102009043628B4 Verbesserte Füllbedingungen in einem Austauschgateverfahren durch Ausführen eines Polierprozesses auf der Grundlage eines Opferfüllmaterials Improved filling conditions in an exchange gate process by performing a polishing process on the basis of a sacrificial filler
12/01/2011	DE102009030292B4 Verfahren zum beidseitigen Polieren einer Halbleiterscheibe A method for double-sided polishing of a semiconductor wafer
12/01/2011	DE102008045534B4 Verfahren zum Polieren einer Halbleiterscheibe A method of polishing a semiconductor wafer
12/01/2011	DE102007054485B4 Siliziumoberflächen-Strukturierungs-Verfahren Silicon surface texturing process
12/01/2011	DE102006032431B4 Verfahren und Vorrichtung zur Detektion von mechanischen Defekten in einem aus Halbleitermaterial bestehenden Stabstück Method and apparatus for detection of mechanical failures in an existing piece of semiconductor material rod
12/01/2011	DE102005058269B4 Vorrichtung zum Reinigen eines gesägten Waferblocks Apparatus for cleaning a sawn wafer block
12/01/2011	DE102005051994B4 Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius Deformation processing technology in silicon-based transistors by using semiconductor layers with embedded atoms with a large covalent radius
12/01/2011	DE102005036063B4 Verfahren zur Herstellung einer Siliziumkarbidhalbleitervorrichtung A method of manufacturing a silicon carbide semiconductor device

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