Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2012
11/14/2012CN101681675B Bitcell with variable-conductance transfer gate and method thereof
11/14/2012CN101650975B Static random access memory ageing and screening method and chip ageing and screening method
11/14/2012CN101627440B Programming non-volatile memory with reduced program disturb by using different pre-charge enable voltages
11/13/2012US8312240 Memory system having a plurality of types of memory chips and a memory controller for controlling the memory chips
11/13/2012US8312233 Storage system that is connected to external storage
11/13/2012US8310878 Semiconductor storage device and boosting circuit
11/13/2012US8310875 Semiconductor memory device
11/13/2012US8310873 Non-volatile semiconductor memory device
11/13/2012US8310871 Semiconductor memory device for storing multivalued data
11/13/2012US8310870 Natural threshold voltage distribution compaction in non-volatile memory
11/13/2012US8310869 Nonvolatile memory device, system, and programming method
11/13/2012US8310868 Spin torque transfer memory cell structures and methods
11/13/2012US8310867 Nonvolatile solid state magnetic memory and recording method thereof
11/13/2012US8310866 MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations
11/13/2012US8310865 Semiconductor memory device having diode cell structure
11/13/2012US8310864 Self-aligned bit line under word line memory array
11/13/2012US8310863 Spin-current switchable magnetic memory element and method of fabricating the memory element
11/13/2012US8310862 Magnetoresistive effect element and magnetic memory
11/13/2012US8310861 STT-MRAM cell structure incorporating piezoelectric stress material
11/13/2012US8310860 SRAM strap row double well contact
11/13/2012US8310859 Semiconductor memory device having balancing capacitors
11/13/2012US8310858 Nonvolatile semiconductor memory device with no decrease in read margin and method of reading the same
11/13/2012US8310857 Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof
11/13/2012US8310856 Ferroelectric memories based on arrays of autonomous memory bits
11/13/2012US8310854 Identifying and accessing individual memory devices in a memory channel
11/13/2012US8310020 Non-volatile magnetic memory with low switching current and high thermal stability
11/13/2012US8309166 Memory cell having nonmagnetic filament contact and methods of operating and fabricating the same
11/08/2012WO2012151099A1 Composite free layer within magnetic tunnel juction for mram applications
11/08/2012WO2012151007A2 Magnonic magnetic random access memory device
11/08/2012WO2012149703A1 Semiconductor device and semiconductor storage apparatus
11/08/2012WO2012035355A3 Magnetic data storage using domain wall displacement
11/08/2012US20120281469 Semiconductor device
11/08/2012US20120281468 Semiconductor device and semiconductor memory device
11/08/2012US20120281467 Magnonic magnetic random access memory device
11/08/2012US20120281466 Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same
11/08/2012US20120281465 High Density Magnetic Random Access Memory
11/08/2012US20120281464 Raising Programming Currents of Magnetic Tunnel Junctions Using Word Line Overdrive and High-k Metal Gate
11/08/2012US20120281463 Magnetoresistive effect element, and magnetic random access memory
11/08/2012US20120281462 Storage element and storage device
11/08/2012US20120281461 Semiconductor storage device
11/08/2012US20120281460 Noncontact writing of nanometer scale magnetic bits using heat flow induced spin torque effect
11/08/2012US20120281459 Ultra low power memory cell with a supply feedback loop configured for minimal leakage operation
11/08/2012US20120281458 Ultra low power sram cell circuit with a supply feedback loop for near and sub threshold operation
11/08/2012US20120281457 Data Dependent SRAM Write Assist
11/08/2012US20120281456 Semiconductor memory device
11/08/2012US20120281455 Semiconductor device
11/08/2012US20120281454 Method and Apparatus for Decoding Memory
11/08/2012US20120281453 Variable resistance nonvolatile storage device
11/08/2012US20120281452 Resistive random memory cell and memory
11/08/2012US20120281451 Ferro-Resistive Random Access Memory (FERRO-RRAM), Operation Method and Manufacturing Method Thereof
11/08/2012DE19964457B4 Schaltung zum Ansteuern eines ferroelektrischen SWL-Speichers Circuit for driving a ferroelectric memory SWL
11/08/2012DE19826330B4 Kombinierter integrierter Speicher- und Logikschaltkreis und Betriebsverfahren hierfür Combined integrated memory and logic circuit and operating method therefor
11/08/2012DE10297786B4 Programmierung eines Phasenübergangsmaterialspeichers Programming a phase change material storage
11/08/2012DE10223508B4 Bezugspegelschaltung in einem ferroelektrischen Speicher und Verfahren zum Betreiben derselben Reference level circuit in a ferroelectric memory and method of operating the same
11/07/2012EP2519969A1 Semiconductor device
11/07/2012EP2519950A1 Flash memory system having cross-coupling compensation during read operation
11/07/2012EP2519949A1 Controlling clock input buffers
11/07/2012CN102770920A Semiconductor memory device with plural memory die and controller die
11/07/2012CN102769100A Storage element and storage device
11/07/2012CN102768995A Memory device with external chip controller and manufacturing method of memory device
11/07/2012CN102768853A Maintenance operations for multi-level data storage cells
11/07/2012CN102768852A Sensitive amplifier
11/07/2012CN102768851A Data storage device authentication apparatus and data storage device including connector
11/07/2012CN102768850A Semiconductor device and semiconductor memory device
11/07/2012CN101399078B 同步半导体存储器件 The synchronous semiconductor memory device
11/06/2012US8307149 Nonvolatile memory device including a logical-to-physical logig-to-physical address conversion table, a temporary block and a temporary table
11/06/2012US8305833 Memory chip architecture having non-rectangular memory banks and method for arranging memory banks
11/06/2012US8305818 Memory device and method for estimating characteristics of multi-bit programming
11/06/2012US8305815 Sense amplifier with fast bitline precharge means
11/06/2012US8305814 Sense amplifier with precharge delay circuit connected to output
11/06/2012US8305812 Flash memory module and method for programming a page of flash memory cells
11/06/2012US8305808 Low-voltage EEPROM array
11/06/2012US8305805 Common drain non-volatile multiple-time programmable memory
11/06/2012US8305804 Flash memory device and system including the same
11/06/2012US8305803 DRAM memory cell having a vertical bipolar injector
11/06/2012US8305802 Semiconductor device and method of manufacturing the same
11/06/2012US8305801 Magnetoresistive element and magnetic memory
11/06/2012US8305800 Method for fabricating a phase-change memory cell
11/06/2012US8305799 Supply voltage generating circuit and semiconductor device having same
11/06/2012US8305798 Memory cell with equalization write assist in solid-state memory
11/06/2012US8305797 Information recording/reproducing device
11/06/2012US8305796 Access signal adjustment circuits and methods for memory cells in a cross-point array
11/06/2012US8305795 Nonvolatile variable resistance memory element writing method, and nonvolatile variable resistance memory device
11/06/2012US8305794 Use of lacunar spinels with tetrahedral aggregates of a transition element of the AM4x8 type with an electronic data rewritable non volatile memory, and corresponding material
11/06/2012US8305793 Integrated circuit with an array of resistance changing memory cells
11/06/2012US8305792 Computation processing circuit using ferroelectric capacitor
11/01/2012WO2012149569A1 Self-body biasing sensing circuit for resistance-based memories
11/01/2012WO2012148743A2 Systems and methods for preventing data remanence in memory systems
11/01/2012WO2012098184A4 Programmable volatile/non-volatile memory cell
11/01/2012WO2012087986A3 Magnetic phase change logic
11/01/2012US20120275219 Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (STTMRAM) Cell
11/01/2012US20120275218 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling
11/01/2012US20120275217 Low noise memory array
11/01/2012US20120275216 Low noise memory array
11/01/2012US20120275215 Semiconductor device
11/01/2012US20120275214 Semiconductor device and driving method thereof
11/01/2012US20120275213 Semiconductor memory device and method for driving the same
11/01/2012US20120275212 Self-Body Biasing Sensing Circuit for Resistance-Based Memories
11/01/2012US20120275211 Reconfigurable Crossbar Memory Array
11/01/2012US20120275210 Non-volatile storage system with dual block programming
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