Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2012
11/22/2012US20120294077 Spin torque transfer memory cell structures and methods
11/22/2012US20120294076 Forming Sublithographic Heaters for Phase Change Memories
11/22/2012US20120294075 Phase-change memory device
11/22/2012US20120294074 Phase change memory programming method and phase change memory
11/22/2012US20120294073 Method of driving phase change memory device capable of reducing heat disturbance
11/22/2012US20120294072 Phase-Change Memory and a Method of Programming the Same
11/22/2012US20120294071 Spin-Torque Transfer Magneto-Resistive Memory Architecture
11/22/2012US20120294070 Method for driving semiconductor device
11/22/2012US20120294069 Signal processing circuit
11/22/2012US20120294068 Memory device and signal processing circuit
11/22/2012US20120294067 Semiconductor device and method for driving the same
11/22/2012US20120294066 Semiconductor storage device
11/22/2012US20120294065 Variable resistance memory device and method of fabricating the same
11/22/2012US20120294064 Variable-resistance memory device and its operation method
11/22/2012US20120294063 Memory element and memory device
11/22/2012US20120294062 Stack processor using a ferroelectric random access memory (f-ram) for code space and a portion of the stack memory space
11/21/2012EP2525360A2 Sparse programming of analog memory cells
11/21/2012EP2524396A2 Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction
11/21/2012EP2524375A1 System and method to control a direction of a current applied to a magnetic tunnel junction
11/21/2012CN202549311U SRAM bit line leakage current compensation circuit
11/21/2012CN202549310U Subthreshold storage unit circuit with single-end operation
11/21/2012CN202549309U High-density high-robustness subthreshold storage circuit
11/21/2012CN202549308U Double-bit-line sub-threshold storage unit circuit
11/21/2012CN102792381A Protection against data corruption for multi-level memory cell (MLC) flash memory
11/21/2012CN102792380A Controlling clock input buffers
11/21/2012CN102790091A Green transistor, nanometer silicon FeRAM and driving method thereof
11/21/2012CN102789811A Multivalue memristor self-adaption programming circuit for nano cross rod structure and method
11/21/2012CN102789810A Variable-resistance memory device and its operation method
11/21/2012CN102789809A Low-leakage power supply circuit in save state of static random access memory
11/21/2012CN102789808A Memory device and method for driving memory device
11/21/2012CN102789807A Three-dimensional array memory architecture having diode in storage serial
11/21/2012CN102789806A Anti-irradiation protection method for TCAM of space devices
11/21/2012CN102176322B Single-event-proximity-effect-resistant static storage unit of physical space interleaving type
11/21/2012CN102169718B Anti-single event upset performance reinforced static memory unit
11/21/2012CN102169716B Memory device operable in overload stress mode
11/21/2012CN101958146B Memory device and the operation method thereof
11/21/2012CN101872837B Resistive layer, resistive storage having same and process for preparing same
11/21/2012CN101740099B Single end bit line sense amplifier
11/21/2012CN101727970B Method for reducing radiation generated by synchronous dynamic random access memory (SDRAM)
11/21/2012CN101512667B Compensating for coupling during programming
11/21/2012CN101425329B Semiconductor storage device
11/21/2012CN101167061B Interface for non-volatile memories
11/20/2012US8315107 Erase completion recognition
11/20/2012US8315104 Nonvolatile semiconductor memory device
11/20/2012US8315102 Multi-bit flash memory devices and methods of programming and erasing the same
11/20/2012US8315101 Non-volatile memory and semiconductor device
11/20/2012US8315098 Memory system
11/20/2012US8315097 Nonvolatile semiconductor memory device
11/20/2012US8315095 Multi-gate bandgap engineered memory
11/20/2012US8315094 Semiconductor memory device
11/20/2012US8315092 Apparatus, system, and method for determining a read voltage threshold for solid-state storage media
11/20/2012US8315091 Device and method to read data subject to a disturb condition
11/20/2012US8315090 Pseudo page mode memory architecture and method
11/20/2012US8315089 Phase change memory device with improved performance that minimizes cell degradation
11/20/2012US8315088 Multiple phase change materials in an integrated circuit for system on a chip application
11/20/2012US8315087 Magnetic random access memory
11/20/2012US8315086 SRAM strap row well contact
11/20/2012US8315085 SRAM timing tracking circuit
11/20/2012US8315084 Fully balanced dual-port memory cell
11/20/2012US8315083 Techniques for reducing a voltage swing
11/20/2012US8315082 Resistance-changing memory device
11/20/2012US8315081 Memory cell that includes multiple non-volatile memories
11/20/2012US8314453 SRAM memory cell with four transistors provided with a counter-electrode
11/15/2012WO2012153926A2 Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
11/15/2012WO2012153258A2 An ultra low power memory cell with a supply feedback loop configured for minimal leakage operation
11/15/2012WO2012153257A2 An ultra low power sram cell circuit with a supply feedback loop for near and sub threshold operation
11/15/2012US20120287742 Circuit and method for outputting refresh execution signal in memory device
11/15/2012US20120287725 Memory controller with selective data transmission delay
11/15/2012US20120287717 Flash memory device and associated charge pump circuit
11/15/2012US20120287714 Increased capacity heterogeneous storage elements
11/15/2012US20120287709 Non volatile semiconductor memory device and manufacturing method thereof
11/15/2012US20120287708 Selection device for a spin-torque transfer magnetic random access memory
11/15/2012US20120287707 Optoelectronic memory devices
11/15/2012US20120287706 Isolation device free memory
11/15/2012US20120287705 Spin-Torque Transfer Magneto-Resistive Memory Architecture
11/15/2012US20120287704 Spin current generator for stt-mram or other spintronics applications
11/15/2012US20120287703 Semiconductor device
11/15/2012US20120287702 Memory circuit and electronic device
11/15/2012US20120287701 Semiconductor device and method for driving semiconductor device
11/15/2012US20120287700 Gain cell semiconductor memory device and driving method thereof
11/15/2012US20120287699 Semiconductor memory device
11/15/2012US20120287698 Using a Bit Specific Reference Level to Read a Memory
11/15/2012US20120287697 Semiconductor storage device
11/14/2012EP2523193A1 An improved high capacity low cost multi-state magnetic memory
11/14/2012CN102782762A Resistance-based memory with reduced voltage input/output device
11/14/2012CN102782761A Systems and methods for writing to multiple port memory circuits
11/14/2012CN102782760A Pointer based column selection techniques in non-volatile memories
11/14/2012CN102779939A Storage element and storage device
11/14/2012CN102779837A Six-transistor static random access memory unit and manufacturing method thereof
11/14/2012CN102779554A Maintenance operations for multi-level data storage cells
11/14/2012CN102779553A 非易失性存储器件及其感测方法 Nonvolatile memory device and method for sensing
11/14/2012CN102779550A Multifunctional memory cell, multifunctional memory array, and manufacturing method of multifunctional memory cell
11/14/2012CN102779549A SRAM write assist apparatus
11/14/2012CN102779101A Semiconductor device
11/14/2012CN101958398B Thermal protect pcram structure and methods for making
11/14/2012CN101937970B Phase change memory having one or more non-constant doping profiles
11/14/2012CN101908375B Content addressable memory
11/14/2012CN101866687B Self-timing writing tracking type static random access memory
11/14/2012CN101789366B Field-by-field laser annealing and feed forward process control
11/14/2012CN101727967B Information storage element and method of writing/reading information into/from information storage element
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