Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
12/2012
12/04/2012US8325518 Multi-level cell NOR flash memory device
12/04/2012US8325517 Nonvolatile memory device and method of driving the same
12/04/2012US8325516 Semiconductor device with split gate memory cell and fabrication method thereof
12/04/2012US8325515 Integrated circuit device
12/04/2012US8325514 Phase change memory device
12/04/2012US8325513 Compound cell spin-torque magnetic random access memory
12/04/2012US8325512 SRAM writing system and related apparatus
12/04/2012US8325511 Retain-till-accessed power saving mode in high-performance static memories
12/04/2012US8325510 Weak bit compensation for static random access memory
12/04/2012US8325509 Memory device
12/04/2012US8325508 Writing method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
12/04/2012US8325507 Memristors with an electrode metal reservoir for dopants
12/04/2012US8324009 Magnetic materials having superparamagnetic particles
11/2012
11/29/2012WO2012160860A1 Semiconductor storage device, memory system, and access method for semiconductor storage device
11/29/2012WO2012159492A1 Multi-layer storage flash memory array programming mode and switching control method thereof
11/29/2012US20120300570 Advanced memory device having improved performance, reduced power and increased reliability
11/29/2012US20120300568 Method of Refreshing a Memory Device, Refresh Address Generator and Memory Device
11/29/2012US20120300552 Charge pump circuit with fast start-up
11/29/2012US20120300544 Gated diode memory cells
11/29/2012US20120300543 Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory
11/29/2012US20120300542 Storage element and storage device
11/29/2012US20120300541 Storage element and storage device
11/29/2012US20120300540 Transient heat assisted sttram cell for lower programming current
11/29/2012US20120300539 Multibit cell with synthetic storage layer
11/29/2012US20120300538 Sram strap row double well contact
11/29/2012US20120300537 Sram strap row substrate contact
11/29/2012US20120300536 Sram strap row well contact
11/29/2012US20120300535 Non-volatile memory device ion barrier
11/29/2012US20120300534 High density memory device
11/29/2012US20120300533 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
11/29/2012US20120300532 Method of forming process for variable resistive element and non-volatile semiconductor memory device
11/29/2012US20120300531 Current Writing Circuit for a Resistive Memory Cell Arrangement
11/29/2012US20120300530 Memory cell operation
11/29/2012DE112004002832B4 Sektorschutzschaltung für einen nichtflüchtigen Halbleiterspeicher, Sektorschutzverfahren und Halbleitervorrichtung Sector protection circuit for a nonvolatile semiconductor memory sector protection method and semiconductor device
11/29/2012DE102012203610A1 Method for refreshing memory device e.g. Rambus dynamic RAM, involves selecting third address from pool of addresses with range defined by significant bits of one of first and second address, to perform respective refresh to cell
11/29/2012DE102007060205B4 Verfahren zum Verbessern des Ausgleichens von Leseknoten eines Leseverstärkers in einem Halbleiterspeicherbauelement, Schaltungsanordnung für einen Leseverstärker und Halbleiterspeicherbauelement A method for improving the balancing of the sense node of a sense amplifier in a semiconductor memory device, circuitry for a sense amplifier and semiconductor memory device
11/28/2012EP2528060A1 Multibit cell with synthetic storage layer
11/28/2012EP2527852A2 Multifunctional nanoscopy for imaging cells
11/28/2012EP2526619A1 Signal processing circuit and method for driving the same
11/28/2012EP2526553A1 Resistance-based memory with reduced voltage input/output device
11/28/2012CN1841557B Using a bit specific reference level to read a memory
11/28/2012CN102804438A Magnetic tunnel junction device and fabrication
11/28/2012CN102804276A Use of emerging non-volatile memory elements with flash memory
11/28/2012CN102804275A Differential Sense Amplifier With Current Mirroring And Reference Memory Cell
11/28/2012CN102800804A Storage element and storage device
11/28/2012CN102800355A Sram timing cell apparatus and methods
11/28/2012CN102800354A Memory chip, memory system, and method of accessing the memory chip
11/28/2012CN102800353A Method of refreshing a memory device, refresh address generator and memory device
11/28/2012CN102800352A Integrated circuit memory device
11/28/2012CN102034927B Impedance memorizer and manufacture method thereof
11/28/2012CN102034525B Sub-threshold storage circuit interface circuit with high density and robustness
11/28/2012CN101989456B Static random access memory
11/28/2012CN101872838B Memory cell having a buried phase change region and method for fabricating the same
11/28/2012CN101751991B Resistance-change memory device
11/28/2012CN101546600B Semiconductor integrated circuit
11/28/2012CN101432820B Methods for erasing and programming memory devices
11/28/2012CN101303888B Storage circuit and method for applying power supply to the storage circuit
11/28/2012CN101206914B Information storage devices using magnetic domain wall movement and methods of manufacturing the same
11/28/2012CN101178929B Data storage device using magnetic domain wall movement and method of operating the same
11/27/2012US8320193 Method of flash memory design with differential cell for better endurance
11/27/2012US8320192 Memory cell, a memory array and a method of programming a memory cell
11/27/2012US8320190 Method and apparatus of operating a non-volatile DRAM
11/27/2012US8320187 Nonvolatile semiconductor memory and control method thereof
11/27/2012US8320186 Method of operating nonvolatile memory device
11/27/2012US8320185 Lifetime markers for memory devices
11/27/2012US8320183 Controlling a memory device responsive to degradation
11/27/2012US8320182 Nonvolatile semiconductor memory device
11/27/2012US8320181 3D memory devices decoding and routing systems and methods
11/27/2012US8320176 EEPROM charge retention circuit for time measurement
11/27/2012US8320175 Magnetic booster for magnetic random access memory
11/27/2012US8320174 Electromechanical switch, storage device comprising such an electromechanical switch and method for operating the same
11/27/2012US8320173 Methods of forming programmed memory cells
11/27/2012US8320172 Write operation for phase change memory
11/27/2012US8320171 Phase change memory devices and memory systems including the same
11/27/2012US8320170 Multi-bit phase change memory devices
11/27/2012US8320169 Asymmetric write current compensation
11/27/2012US8320168 Phase change random access memory device and related methods of operation
11/27/2012US8320167 Programmable write driver for STT-MRAM
11/27/2012US8320166 Magnetic random access memory and method of reading data from the same
11/27/2012US8320165 SRAM strap row substrate contact
11/27/2012US8320164 Static random access memory with data controlled power supply
11/27/2012US8320163 Eight-transistor SRAM memory with shared bit-lines
11/27/2012US8320162 Semiconductor device and driving method of the same
11/27/2012US8320161 Conductive metal oxide structures in non volatile re writable memory devices
11/27/2012US8320160 NAND architecture having a resistive memory cell connected to a control gate of a field-effect transistor
11/27/2012US8320159 Resistance variable nonvolatile memory device
11/27/2012US8320158 Nonvolatile semiconductor memory device
11/27/2012US8320157 Nonvolatile semiconductor memory device
11/27/2012US8320156 Semiconductor memory device
11/27/2012US8320155 Semiconductor integrated circuit device
11/27/2012US8319263 Magnetic tunnel junction device
11/22/2012WO2012158514A1 Non-volatile memory and method with small logical groups distributed among active slc and mlc memory partitions
11/22/2012WO2012157472A1 Semiconductor device
11/22/2012WO2012123348A3 Magneto-electronic component, and method for the production thereof
11/22/2012US20120294084 Flash EEPROM System with Simultaneous Multiple Data Sector Programming and Storage of Physical Block Characteristics in Other Designated Blocks
11/22/2012US20120294082 Semiconductor Device
11/22/2012US20120294081 Semiconductor device
11/22/2012US20120294080 Memory device and method for driving memory device
11/22/2012US20120294079 Memory element and memory device
11/22/2012US20120294078 Bipolar spin-transfer switching
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