Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2001
10/09/2001US6301149 Method for reading a multilevel nonvolatile memory and multilevel nonvolatile memory
10/09/2001US6301147 Electronic semiconductor circuit which includes a tunnel diode
10/09/2001US6301146 Static random access memory (RAM) systems and storage cell for same
10/09/2001US6301145 Ferroelectric memory and method for accessing same
10/09/2001US6301144 Semiconductor memory device
10/09/2001US6301143 Semiconductor memory device with chip layout for enabling high speed operation
10/09/2001US6300799 Signal line driver having reduced transmission delay time and reduced power consumption
10/09/2001US6299300 Micro electro-mechanical system for ejection of fluids
10/04/2001WO2001073846A1 Semiconductor device
10/04/2001US20010027546 Semiconductor integrated circuit
10/04/2001US20010026967 Semiconductor memory device
10/04/2001US20010026966 Integrated circuit containing a number of subcircuits
10/04/2001US20010026496 Semiconductor memory device allowing increase in capacity and operation speed with a suppressed layout area
10/04/2001US20010026495 Semiconductor integrated circuit device and method of activating the same
10/04/2001US20010026493 Method and apparatus for completely hiding refresh operations in a dram device using clock division
10/04/2001US20010026492 Semiconductor memory device with a refresh function
10/04/2001US20010026491 Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configuration
10/04/2001US20010026488 Semiconductor memory and method of saving energy of the memory
10/04/2001US20010026485 Decoder element for producing an output signal having three different potentials
10/04/2001US20010026483 Semiconductor memory device
10/04/2001US20010026480 Multi-level flash EEPROM cell and method of manufacture thereof
10/04/2001US20010026479 Semiconductor integrated circuit
10/04/2001US20010026478 Semiconductor memory device
10/04/2001US20010026475 Semiconductor integrated circuit
10/04/2001US20010026474 Semiconductor storage device
10/04/2001US20010026472 Flash EEprom system
10/04/2001US20010026471 Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
10/04/2001US20010026470 Magnetic field element having a biasing magnetic layer structure
10/04/2001US20010026469 Integrated memory having memory cells with magnetoresistive storage effect
10/04/2001US20010026468 Electronic device and recording method using the same
10/04/2001US20010026467 Semiconductor memory device with reduced power consumption and with reduced test time
10/04/2001US20010026466 Magnetic control device, and magnetic component and memory apparatus using the same
10/04/2001US20010026465 Associative cache memory
10/04/2001US20010026189 Intermediate voltage control circuit having reduced power consumption five
10/04/2001US20010026183 Signal processing circuits having a pair of delay locked loop (DLL) circuits for adjusting a duty-cycle of a periodic digital signal and methods of operating same
10/04/2001US20010026176 Decoding apparatus
10/04/2001US20010026169 Semiconductor integrated circuit having transistors for cutting-off subthreshold current
10/04/2001US20010026158 Nuclear spin control device
10/04/2001US20010025978 Magnetic random access memory capable of writing information with reduced electric current
10/04/2001EP1139569A1 Adjustment of the duty-cycle of a periodic digital signal with leading and triling edge DLLs
10/04/2001EP1137996A1 Method and apparatus for high speed data capture using bit-to-bit timing correction, and memory device using same
10/04/2001EP0886865B1 Cell plate referencing for dram sensing
10/04/2001DE10113853A1 Magnetspeicherelement, Magnetspeicher und Herstellungsverfahren für einen Magnetspeicher The magnetic memory element, magnetic memory and manufacturing method for a magnetic memory
10/04/2001DE10113714A1 Eingabe/Ausgabe-Abtastverstärkerschaltung für ein Halbleiterspeicherbauelement Input / output sense amplifier for a semiconductor memory device
10/03/2001CN1316086A FeRAM arrangement
10/03/2001CN1315731A Storage with regenerative logic circuit and method for regenerating content stored therein
10/02/2001US6298413 Apparatus for controlling refresh of a multibank memory device
10/02/2001US6298003 Boost circuit of DRAM with variable loading
10/02/2001US6298000 Dynamic type semiconductor memory device operable in self refresh operation mode and self refresh method thereof
10/02/2001US6297999 Semiconductor memory device and method for setting stress voltage
10/02/2001US6297997 Semiconductor device capable of reducing cost of analysis for finding replacement address in memory array
10/02/2001US6297994 Single electron MOSFET memory device and method
10/02/2001US6297989 Applications for non-volatile memory cells
10/02/2001US6297988 Mode indicator for multi-level memory
10/02/2001US6297987 Magnetoresistive spin-injection diode
10/02/2001US6297986 Ferroelectric random access memory
10/02/2001US6297985 Cell block structure of nonvolatile ferroelectric memory
10/02/2001US6297983 Reference layer structure in a magnetic storage cell
10/02/2001US6297857 Method for accessing banks of DRAM
10/02/2001US6297690 Booster circuit
10/02/2001US6297688 Current generating circuit
10/02/2001US6297682 Differential sense amplifier circuit
10/02/2001US6297680 Internal clock generator that minimizes the phase difference between an external clock signal and an internal clock signal
10/02/2001US6297671 Level detection by voltage addition/subtraction
10/02/2001US6297668 Serial device compaction for improving integrated circuit layouts
10/02/2001US6297624 Semiconductor device having an internal voltage generating circuit
10/02/2001CA2019310C Non-volatile ram bit cell
09/2001
09/27/2001WO2001071735A1 Magnetic element with an improved magnetoresistance ratio
09/27/2001WO2001071724A1 Method and apparatus for an easy identification of a state of a dram generator controller
09/27/2001WO2001071722A1 Multidimensional addressing architecture for electronic devices
09/27/2001WO2001071721A2 Method and apparatus for an improved reset and power-on arrangement for a dram generator controller
09/27/2001US20010025350 Synchronous circuit
09/27/2001US20010025333 Integrated circuit memory device incorporating a non-volatile memory array and a relatively faster access time memory cache
09/27/2001US20010024841 High density vertical sram cell using bipolar latchup induced by gated diode breakdown
09/27/2001US20010024398 Memory device with support for unaligned access
09/27/2001US20010024397 Semiconductor memory device
09/27/2001US20010024396 Integrated memory having a bit line reference voltage, and a method for producing the bit line reference voltage
09/27/2001US20010024395 Sense amplifier circuit for use in a semiconductor memory device
09/27/2001US20010024388 Magnetoresistive element and use thereof as a memory element in a memory cell configuration
09/27/2001US20010024386 Flash EEprom system
09/27/2001US20010024383 Semiconductor memory device
09/27/2001US20010024382 Semiconductor memory device
09/27/2001US20010024381 Current sense amplifier circuit
09/27/2001US20010024380 Memory cell configuration in which an electrical resistance of a memory element represents an information item and can be influenced by a megnetic field, and method for fabricating it
09/27/2001US20010024376 Apparatus for generating high voltage signal
09/27/2001US20010024347 Tunnel magnetoresistive element, thin-film magnetic head and memory element, and methods of manufacturing same
09/27/2001US20010024136 Semiconductor integrated circuit compensating variations of delay time
09/27/2001US20010024135 Method and apparatus for generating a sequence of clock signals
09/27/2001US20010023992 Highly integrated system-on-chip system with non-volatile memory unit
09/27/2001US20010023952 Semiconductor memory device and manufacturing method thereof
09/27/2001US20010023950 Ferrpelectric memory device having a ferroelectric capacitor disposed on an extended active area
09/27/2001DE10014387C1 Ferroelectric memory - has reference bit line connected to main reference bit line via switching element for equalising charge between reference bit lines
09/27/2001DE10010888A1 Matrix capacitance evaluation circuit
09/26/2001EP1137010A1 Semiconductor memory devices
09/26/2001EP1137009A2 Integrated memory with bit line reference voltage and method for generating the bit line reference voltage
09/26/2001EP0950247B1 Adjustable output driver circuit
09/26/2001EP0916138B1 Method of operating a storage cell arrangement
09/26/2001EP0847059B1 Semiconductor memory
09/26/2001EP0677204B1 METHOD AND APPARATUS FOR PROVIDING ACCURATE T(on) AND T(off) TIMES FOR THE OUTPUT OF A MEMORY ARRAY
09/26/2001EP0646932B1 Circuit for decoding variable-length code, and system for decoding variable-length code which uses the circuit
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