Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2002
06/13/2002US20020071321 System and method of maintaining high bandwidth requirement of a data pipe from low bandwidth memories
06/13/2002US20020071319 Method and apparatus for data transmission and reception
06/13/2002US20020071318 Semiconductor device
06/13/2002US20020071317 Integrated memory having memory cells and reference cells, and corresponding operating method
06/13/2002US20020071315 Nonvolatile memory having embedded word lines
06/13/2002US20020071313 Non-volatile semiconductor memory device
06/13/2002US20020071312 Semiconductor memory device
06/13/2002US20020071309 Substitute specification
06/13/2002US20020071308 Semiconductor memory device having memory cells each capable of storing three or more values
06/13/2002US20020071307 Method and circuit for programming a multilevel non-volatile memory
06/13/2002US20020071306 Device for evaluating cell resistances in a magnetoresistive memory
06/13/2002US20020071304 Nonvolatile ferroelectric memory having shunt lines
06/13/2002US20020071303 Configuration and method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory
06/13/2002US20020071302 Semiconductor memory with multistage local sense amplifier
06/13/2002US20020071104 Image sensing apparatus including a microcontroller
06/13/2002US20020071066 Compact display assembly
06/13/2002US20020070776 Semiconductor device capable of immediately recovering from erroneous state to normal state
06/13/2002US20020070762 Amplifier for use in semiconductor integrated circuits
06/13/2002US20020070396 Ferroelectric memory having electromagnetic wave shield structure
06/13/2002DE10146825A1 Programmierbare Impedanzsteuerschaltung Programmable impedance control circuit
06/13/2002DE10062570C1 Read and write control circuit for magnetoresistive random-access memory has read/write amplifier pairs at opposite ends of bit lines
06/13/2002DE10059182A1 Schaltungsanordnung zum zerstörungsfreien, selbstnormierenden Auslesen von MRAM-Speicherzellen Circuit arrangement for non-destructive, selbstnormierenden reading MRAM memory cells
06/13/2002DE10058966A1 Charging memory cells involves selecting memory cells and carrying out refresh process only for selected memory cells; memory cells can be selected by area of memory
06/13/2002DE10058965A1 RAM memory has at least some cells with additional device for activation by forced control voltage different from normal control voltage to impose defined logical state on memory cells
06/13/2002DE10058398A1 Integrated semiconductor memory device e.g. dynamic random access memory (DRAM), memory cells are accessed by activating the word line
06/13/2002DE10058047A1 Integrierter Speicher mit einer Anordnung von nicht-flüchtigen Speicherzellen und Verfahren zur Herstellung und zum Betrieb des integrierten Speichers Integrated memory with an arrangement of non-volatile memory cells and methods of manufacturing and operating the integrated memory
06/13/2002DE10056283A1 Artificial neuron for artificial neural network, has transistor with several inputs connected to first transistor input in parallel via resistance elements containing material ensuring a varistor effect
06/12/2002EP1213745A1 Method of producing a ferroelectric memory and memory device
06/12/2002CN1353460A Data storage possessing sereral storage unit
06/12/2002CN1353422A Magnetic storage equipment containing storage element exhibiting strong magnetic tunnel effect
06/12/2002CN1353421A Film magnetic body storage possessing highly integrated storage array
06/11/2002US6404699 Integrated circuit having a command decoder
06/11/2002US6404697 Data output device for synchronous memory device
06/11/2002US6404696 Random access memory with divided memory banks and data read/write architecture therefor
06/11/2002US6404695 Semiconductor memory device including a plurality of memory blocks arranged in rows and columns
06/11/2002US6404693 Integrated circuit memory devices that select sub-array blocks and input/output line pairs based on input/output bandwidth, and methods of controlling same
06/11/2002US6404692 Semiconductor memory
06/11/2002US6404690 Refresh drive circuit for a DRAM
06/11/2002US6404689 Method and structure for hiding a refresh operation in a DRAM having an interlocked pipeline
06/11/2002US6404688 Semiconductor memory device having a self-refresh operation
06/11/2002US6404687 Semiconductor integrated circuit having a self-refresh function
06/11/2002US6404685 Equilibrate circuit for dynamic plate sensing memories
06/11/2002US6404679 Multiple level floating-gate memory
06/11/2002US6404678 Source and drain sensing
06/11/2002US6404675 Electrically alterable non-volatile memory with n-bits per cell
06/11/2002US6404674 Cladded read-write conductor for a pinned-on-the-fly soft reference layer
06/11/2002US6404673 Magnetic memory device and method of reading data in magnetic memory device
06/11/2002US6404672 Magnetic element and magnetic memory device
06/11/2002US6404671 Data-dependent field compensation for writing magnetic random access memories
06/11/2002US6404670 Multiple ports memory-cell structure
06/11/2002US6404669 Reduced leakage DRAM storage unit
06/11/2002US6404668 Memory configuration including a plurality of resistive ferroelectric memory cells
06/11/2002US6404667 2T-1C ferroelectric random access memory and operation method thereof
06/11/2002US6404663 Semiconductor integrated circuit having testing mode for modifying operation timing
06/11/2002US6404661 Semiconductor storage device having arrangement for controlling activation of sense amplifiers
06/11/2002US6404258 Delay circuit having low operating environment dependency
06/11/2002US6404254 Latch circuit and semiconductor integrated circuit having the latch circuit with control signal having a large voltage amplitude
06/11/2002US6404250 On-chip circuits for high speed memory testing with a slow memory tester
06/11/2002US6404233 Method and apparatus for logic circuit transition detection
06/11/2002US6404221 Threshold invariant voltage detecting device
06/11/2002US6404178 Power supply circuit capable of supplying a stable power supply potential even to a load consuming rapidly changing current
06/06/2002WO2002045093A1 Semiconductor memory device and address conversion circuit
06/06/2002WO2002045090A2 Circuit for non-destructive, self-normalizing reading-out of mram memory cells
06/06/2002WO2002005268A3 All metal giant magnetoresistive memory
06/06/2002WO2002001568A3 Dynamic random access memory
06/06/2002WO2001071721A3 Method and apparatus for an improved reset and power-on arrangement for a dram generator controller
06/06/2002US20020069026 Semiconductor device capable of test mode operation
06/06/2002US20020067654 Synchronous memory modules and memory systems with selectable clock termination
06/06/2002US20020067651 Charge pump for negative differential resistance transistor
06/06/2002US20020067650 Semiconductor memory with built-in cache
06/06/2002US20020067649 Semiconductor memory, and memory access method
06/06/2002US20020067648 Asynchronous SRAM compatible memory device using DRAM cell and method for driving the same
06/06/2002US20020067647 Semiconductor integrated circuit device
06/06/2002US20020067644 Wordline driver for ensuring equal stress to wordlines in multi row address disturb test and method of driving the wordline driver
06/06/2002US20020067643 Reduced power bit line selection in memory circuits
06/06/2002US20020067642 Semiconductor memory
06/06/2002US20020067637 Semiconductor memory
06/06/2002US20020067635 Wide databus architecture
06/06/2002US20020067581 Magnetoresistive device and/or multi-magnetoresistive device
06/06/2002US20020067201 Driver timing and circuit technique for a low noise charge pump circuit
06/06/2002US20020067197 Phase adjustor for semiconductor integrated circuit
06/06/2002US20020066933 Negative differential resistance field effect transistor (NDR-FET) & circuits using the same
06/06/2002US20020066915 Method of producing a ferroelectric memory and a memory device
06/06/2002DE10129263A1 Non-volatile ferroelectric memory has pulse width generating unit for varying width of reproduction pulse and outputting varied width to word line driver to identify defective cell
06/06/2002DE10058782A1 Method for producing a capacitor structure for a memory device fits multiple capacitors on a carrier like a semiconductor substrate with a common contact area.
06/06/2002DE10057275C1 Memory cell refreshing device for dynamic random-access memory provides information refresh control signal sequence dependent on maximum storage times of individual memory cells
06/05/2002EP1211812A2 A/D conversion method in high density multilevel non-volatile memory devices and corresponding converter device
06/05/2002EP1211731A2 A symmetric architecture for memory cells having widely spread metal bit lines
06/05/2002EP1211692A2 Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
06/05/2002EP1210714A2 High density non-volatile memory device
06/05/2002EP1016087B1 Memory location arrangement and its use as a magnetic ram and as an associative memory
06/05/2002CN1352808A Electrically programmable memory element with improved contacts
06/05/2002CN1352788A Ultrafast magnetization reversal
06/04/2002US6401180 Bank history table for improved pre-charge scheduling of random access memory banks
06/04/2002US6401167 High performance cost optimized memory
06/04/2002US6400643 Semiconductor storage device with suppressed power consumption and reduced recovery time from suspend mode
06/04/2002US6400637 Semiconductor memory device
06/04/2002US6400636 Address generator for a semiconductor memory
06/04/2002US6400635 Memory circuitry for programmable logic integrated circuit devices
06/04/2002US6400632 Semiconductor device including a fuse circuit in which the electric current is cut off after blowing so as to prevent voltage fall