Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
10/2003
10/22/2003EP1354348A2 Self-aligned conductive line for cross-point magnetic memory integrated circuits
10/22/2003EP1354322A1 Non orthogonal mram device
10/22/2003EP1354321A2 Mram arrangement
10/22/2003EP1354320A2 Selection device for a semiconductor memory device
10/22/2003EP1054326B1 Memory error correction using redundant sliced memory and standard ECC mechanisms
10/22/2003CN1451164A Memory cell component and production method thereof
10/22/2003CN1450559A 半导体存储器 Semiconductor memory
10/22/2003CN1450558A Method for controlling semiconductor device and semiconductor device
10/22/2003CN1450464A 半导体器件 Semiconductor devices
10/22/2003CN1450434A Backup Memory control unit for reducing current consumption
10/22/2003CN1125466C Nonvolatile semiconductor memory
10/22/2003CN1125465C Method for forming world line decoder circuit in storage element
10/21/2003US6636455 Semiconductor memory device that operates in synchronization with a clock signal
10/21/2003US6636454 Low-power consumption semiconductor memory device
10/21/2003US6636453 Memory circuit having a plurality of memory areas
10/21/2003US6636452 Address control apparatus of semiconductor memory device using bank address
10/21/2003US6636450 Fuse read sequence for auto refresh power reduction
10/21/2003US6636449 Memory circuit with automatic precharge function, and integrated circuit device with automatic internal command function
10/21/2003US6636448 Semiconductor memory device having fewer memory cell plates being activated in a test mode than in a normal mode
10/21/2003US6636446 Semiconductor memory device having write latency operation and method thereof
10/21/2003US6636445 Fast cycle ram having improved data write operation
10/21/2003US6636444 Semiconductor memory device having improved data transfer rate without providing a register for holding write data
10/21/2003US6636443 Semiconductor memory device having row buffers
10/21/2003US6636437 Programming method of nonvolatile semiconductor memory device
10/21/2003US6636436 Isolation of memory cells in cross point arrays
10/21/2003US6636435 Ferroelectric memory cell array and method of storing data using the same
10/21/2003US6636434 Multibit memory point memory
10/21/2003US6636433 Electronic device and recording method using the same
10/21/2003US6636207 Display driver IC
10/21/2003US6636110 Internal clock generating circuit for clock synchronous semiconductor memory device
10/21/2003US6636080 Apparatus for detecting edges of input signal to execute signal processing on the basis of edge timings
10/21/2003US6635947 Monolithically integrable inductor
10/21/2003US6635934 Semiconductor integrated circuit device operating with low power consumption
10/21/2003US6635914 Microelectronic programmable device and methods of forming and programming the same
10/21/2003US6635546 Method and manufacturing MRAM offset cells in a damascene structure
10/21/2003US6635496 Plate-through hard mask for MRAM devices
10/16/2003WO2003085752A2 Molehole embedded 3-d crossbar architecture used in electrochemical molecular memory device
10/16/2003WO2003085750A1 Magnetoresistance effect element and magnetic memory device
10/16/2003WO2003085740A1 Non-volatile memory and manufacturing method thereof
10/16/2003WO2003085734A1 Interconnection structure and methods
10/16/2003WO2003085675A2 Phase-change memory device
10/16/2003WO2003085674A2 Synthetic-ferrimagnet sense-layer for high density mram applications
10/16/2003WO2003085673A2 Seu resistant sram using feedback mosfet
10/16/2003WO2003085672A1 Memory chip architecture having non-rectangular memory banks and method for arranging memory banks
10/16/2003WO2003067633A3 Programmable resistance memory element and method for making same
10/16/2003WO2003038829A3 Storage assembly
10/16/2003US20030196057 Semiconductor memory device having control circuit
10/16/2003US20030196033 Method and apparatus for using a dynamic random access memory in substitution of a hard disk drive
10/16/2003US20030194630 Bistable molecules that undergo redox reactions, such as rotaxanes and catenanes, or that undergo an electric field induced band gap change that causes the molecules to change from a fully conjugated to a less conjugated state
10/16/2003US20030193832 Semiconductor memory apparatus simultaneously accessible via multi-ports
10/16/2003US20030193831 Method and system for writing data in an MRAM memory device
10/16/2003US20030193830 Wordline driven method for sensing data in a resistive memory array
10/16/2003US20030193829 Method and system for low power refresh of dynamic random access memories
10/16/2003US20030193824 Semiconductor memory device
10/16/2003US20030193823 Semiconductor memory device provided with test memory cell unit
10/16/2003US20030193349 Semiconductor integrated circuit
10/16/2003US20030193064 Self-aligned multi-bit flash memory cell and its contactless flash memory array
10/16/2003CA2481066A1 Seu resistant sram using feedback mosfet
10/15/2003EP1353371A1 Two-bit rom cell manufacturing process
10/15/2003EP1352393A1 Techniques to asynchronously operate a synchronous memory
10/15/2003CN1449051A Mask read-only memory
10/15/2003CN1449024A Erase scheme for non-volatile memory
10/15/2003CN1449021A Self-aligned, programmable phase change memory and method for manufacturing the same
10/15/2003CN1448957A Method for testing memory apparatus
10/15/2003CN1448953A Automatic precharge control circuit in semiconductor memory and method therefor
10/15/2003CN1448952A Semiconductor storage apparatus
10/15/2003CN1448951A Semiconductor memory device having memory cells requiring no refresh operations
10/15/2003CN1448950A Semiconductor memory device having memory cells requiring no refresh operations
10/15/2003CN1448949A Random access memory device and driving method for the same
10/15/2003CN1448948A Magnetic storage device
10/15/2003CN1448947A Method of making magnetic memory device
10/15/2003CN1448946A Magnet logic element and magnet logic element array
10/15/2003CN1448945A Magnetoresistive element and magnetic memory thereof
10/15/2003CN1448944A Film magnetic storage device equipped with false elements for data reading reference
10/15/2003CN1448943A Magnetic storage device
10/15/2003CN1448917A Solid magnetic element and solid magnetic element array
10/15/2003CN1124611C Memory
10/15/2003CN1124610C Semiconductor memory of graded position line structure with uneven local position line
10/15/2003CN1124608C Data sensing device and method of multibit memory cell
10/14/2003US6634002 Test circuit of semiconductor memory
10/14/2003US6633995 System for generating N pipeline control signals by delaying at least one control signal corresponding to a subsequent data path circuit
10/14/2003US6633952 Programmable refresh scheduler for embedded DRAMs
10/14/2003US6633951 Method for reducing power consumption through dynamic memory storage inversion
10/14/2003US6633508 Semiconductor memory device and memory system
10/14/2003US6633506 Antifuse detection circuit
10/14/2003US6633505 Semiconductor memory device, control method thereof, and control method of semiconductor device
10/14/2003US6633504 Synchronous DRAM having test mode in which automatic refresh is performed according to external address and automatic refresh method
10/14/2003US6633499 Method for reducing voltage drops in symmetric array architectures
10/14/2003US6633498 Magnetoresistive random access memory with reduced switching field
10/14/2003US6633497 Resistive cross point array of short-tolerant memory cells
10/14/2003US6633496 Symmetric architecture for memory cells having widely spread metal bit lines
10/14/2003US6633183 Antifuse reroute of dies
10/14/2003US6633180 Methods of rerouting dies using antifuses
10/14/2003US6632714 Method for manufacturing semiconductor memory
10/14/2003US6632706 Three dimensional structure integrated circuit fabrication process
10/09/2003WO2003083939A1 Magnetic shield package and seal material of magnetic non-volatile memory element
10/09/2003WO2003083874A1 Data storage device
10/09/2003WO2003083873A1 Method for producing a reference layer and an mram memory cell provided with said type of reference layer
10/09/2003WO2003083429A1 A novel highly-integrated flash memory and mask rom array architecture
10/09/2003WO2002099813A3 Semiconductor storage location
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