Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
11/2003
11/11/2003US6646956 One-shot signal generating circuit
11/11/2003US6646955 Synchronous dynamic random access memory
11/11/2003US6646954 Synchronous controlled, self-timed local SRAM block
11/11/2003US6646949 Word line driver for dynamic random access memories
11/11/2003US6646946 Fast accessible semiconductor memory device
11/11/2003US6646944 Semiconductor memory device
11/11/2003US6646943 Virtual static random access memory device and driving method therefor
11/11/2003US6646942 Method and circuit for adjusting a self-refresh rate to maintain dynamic data at low supply voltages
11/11/2003US6646941 Apparatus for operating an integrated circuit having a sleep mode
11/11/2003US6646939 Low power type Rambus DRAM
11/11/2003US6646938 Static memory having self-timing circuit
11/11/2003US6646936 Semiconductor memory device shiftable to test mode in module as well as semiconductor memory module using the same
11/11/2003US6646922 Nonvolatile memory and method of driving the same
11/11/2003US6646913 Method for storing and reading data in a multilevel nonvolatile memory
11/11/2003US6646911 Thin film magnetic memory device having data read current tuning function
11/11/2003US6646910 Magnetic memory using reverse magnetic field to improve half-select margin
11/11/2003US6646909 Memory cell, nonvolatile memory device and control method therefor improving reliability under low power supply voltage
11/11/2003US6646908 Integrated memory chip with a dynamic memory
11/11/2003US6646907 Semiconductor memory device
11/11/2003US6646906 Methods of reading ferroelectric memory cells
11/11/2003US6646905 Ferroelectric storage device
11/11/2003US6646904 Ferroelectric memory and method of reading the same
11/11/2003US6646903 Ferroelectric memory input/output apparatus
11/11/2003US6646902 Method of retaining memory state in a programmable conductor RAM
11/11/2003US6646530 Configuration for minimizing the Neel interaction between two ferromagnetic layers on both sides of a non-ferromagnetic separating layer
11/11/2003US6646483 Output buffer circuit for reducing variation of slew rate due to variation of PVT and load capacitance of output terminal, and semiconductor device including the same
11/11/2003US6646310 Four transistor static-random-access-memory cell
11/11/2003US6646300 Semiconductor memory device
11/11/2003US6645809 Process for producing a capacitor configuration
11/11/2003US6644767 Ejection of ink using pulsating pressure and a movable shutter
11/11/2003CA2302014C A read-only memory and read-only memory devices
11/06/2003WO2003092084A1 Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same
11/06/2003WO2003092076A1 Magnetic memory and its operating method
11/06/2003WO2003092015A1 Redundancy in chained memory architectures
11/06/2003WO2003092014A1 Memory storage device with heating element
11/06/2003WO2003092013A2 Self-aligned magnetic tunneling junction and via contact
11/06/2003WO2003092012A2 Flexible redundancy for memories
11/06/2003WO2003092011A2 Semiconductor memory device and operating method for a semiconductor memory device
11/06/2003WO2003091883A1 Destructive-read random access memory system buffered with destructive-read memory cache
11/06/2003WO2003075280B1 Semiconductor storing device
11/06/2003WO2003036485A3 System and method for caching dram using an egress buffer
11/06/2003WO2003019568A3 Control device for reversing the direction of magnetisation without an external magnetic field
11/06/2003WO2003007303A3 Memory device having different burst order addressing for read and write operations
11/06/2003WO2002086906A3 Method for the comparison of the address of a memory access with the already known address of a defective memory cell
11/06/2003WO2002075926A3 Antifuse reroute of dies
11/06/2003WO2002073620A3 Reference for mram cell
11/06/2003WO2002023548A3 Combined tracking of wll and vpp with low threshold voltage in dram array
11/06/2003US20030208663 System and method for multi-bit flash reads using dual dynamic references
11/06/2003US20030207486 Low remanence flux concentrator for MRAM devices
11/06/2003US20030207478 Method of fabricating a shape memory alloy ink jet printing mechanism
11/06/2003US20030206481 Trench isolated cross-point memory array and method of fabrication
11/06/2003US20030206480 Semiconductor memory device
11/06/2003US20030206478 Semiconductor device including multi-chip
11/06/2003US20030206476 Low power consumption memory device having row-to-column short
11/06/2003US20030206473 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents
11/06/2003US20030206472 Semiconductor memory device including an SOI substrate
11/06/2003US20030206471 Semiconductor memory device and method for pre-charging the same
11/06/2003US20030206469 High data rate write process for non-volatile flash memories
11/06/2003US20030206465 Integrated memory with a configuration of non-volatile memory cells and method for fabricating and for operating the integrated memory
11/06/2003US20030206464 Memory devices with reduced power consumption refresh cycles
11/06/2003US20030206463 Low-power consumption semiconductor memory device
11/06/2003US20030206461 Magnetoresistive memory (MRAM)
11/06/2003US20030206459 Semiconductor device array having dense memory cell array and hierarchical bit line scheme
11/06/2003US20030206458 Optical memory
11/06/2003US20030206457 Semiconductor device having mechanism capable of high-speed operation
11/06/2003US20030206453 Magnetic random access memory (MRAM) cells including an access transistor and a bit line that are connected to a terminal of a magnetic resistor, and methods of operating same
11/06/2003US20030206450 Segmented metal bitlines
11/06/2003US20030206449 Flash EEprom system
11/06/2003US20030206448 Sense amplifier enable signal generating circuits having process tracking capability and semiconductor memory devices including the same
11/06/2003US20030206441 Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
11/06/2003US20030206440 Bi-directional floating gate nonvolatile memory
11/06/2003US20030206438 Nonvolatile semiconductor memory device
11/06/2003US20030206437 Floating-gate semiconductor structures
11/06/2003US20030206436 Molecular wire crossbar flash memory
11/06/2003US20030206434 Layout for thermally selected cross-point mram cell
11/06/2003US20030206433 Dual write cycle programmable conductor memory system and method of operation
11/06/2003US20030206432 Minimizing errors in a magnetoresistive solid-state storage device
11/06/2003US20030206431 Capacitance sensing technique for ferroelectric random access memory arrays
11/06/2003US20030206430 Ferroelectric memory
11/06/2003US20030206429 Vertically stacked field programmable nonvolatile memory and method of fabrication
11/06/2003US20030206428 High voltage row and column driver for programmable resistance memory
11/06/2003US20030206427 System and method for performing partial array self-refresh operation in a semiconductor memory device
11/06/2003US20030206049 Semiconductor integrated circuit
11/06/2003US20030205754 Dynamic electrically alterable programmable read only memory device
11/06/2003US20030205726 Magnetoresistive memory devices and assemblies; and methods of storing and retrieving information
11/05/2003EP1359621A1 Magnetoresistance storage element
11/05/2003EP1359590A1 Magnetic memory devices
11/05/2003EP1359589A2 Conductor structure for a magnetic memory
11/05/2003EP1359587A2 Memory cell arrays
11/05/2003EP1359586A2 Memory device and in particular a sense amplifier therefor
11/05/2003EP1358679A2 Serial mram device
11/05/2003EP1358655A2 Mram architecture and system
11/05/2003EP1287528B1 Semiconductor memory and controlling method thereof
11/05/2003EP1163675B1 Integrated memory with memory cells and reference cells and operating method for a memory of this type
11/05/2003EP0727869B1 Booster
11/05/2003CN1454384A A method and apparatus for simultaneous, differential data sensing and capture in a high speed memory
11/05/2003CN1453844A Ferroelectric capacitor with gap
11/05/2003CN1453793A Semiconductor memory with test mode and storing system using the same
11/05/2003CN1453792A Improved semiconductor memory structure
11/05/2003CN1453791A Conductor structure of magnetic storing device
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