Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
05/2004
05/13/2004US20040090835 Magentic memory and method for optimizing write current a in magnetic memory
05/13/2004US20040090833 Read-out circuit for a dynamic memory circuit, memory cell array, and method for amplifying and reading data stored in a memory cell array
05/13/2004US20040090831 Dedicated redundancy circuits for different operations in a flash memory device and methods of operating the same
05/13/2004US20040090830 Data path reset circuit using clock enable signal, reset method, and semiconductor memory device including the data path reset circuit and adopting the reset method
05/13/2004US20040090826 Semiconductor device having semiconductor memory with sense amplifier
05/13/2004US20040090824 Non-volatile semiconductor memory device
05/13/2004US20040090822 MRAM and methods for manufacturing and driving the same
05/13/2004US20040090821 Multi-mode synchronous memory device and methods of operating and testing same
05/13/2004US20040090820 Low standby power SRAM
05/13/2004US20040090819 Storage circuit having single-ended write circuitry
05/13/2004US20040090818 Design concept for SRAM read margin
05/13/2004US20040090816 6f2 3-transistor dram gain cell
05/13/2004US20040090814 Semiconductor memory device
05/13/2004US20040090812 Semiconductor memory device and various system mounting them
05/13/2004US20040090811 Nonvolatile FeRAM control device
05/13/2004US20040090810 Ferroelectric memory
05/13/2004US20040090809 Memory device array having a pair of magnetic bits sharing a common conductor line
05/13/2004US20040090553 Monolithic integrated circuit with a printhead interface
05/13/2004US20040090494 Ink jet nozzle having actuator with anchor positioned between nozzle chamber and actuator connection point
05/13/2004US20040090493 Ink jet with narrow chamber
05/13/2004US20040090243 Output buffer circuits including logic gates having balanced output nodes
05/13/2004US20040089913 Semiconductor memory device with efficiently laid-out internal interconnection lines
05/13/2004US20040089904 Mram with asymmetric cladded conductor
05/13/2004US20040089889 Magnetic memory device having soft reference layer
05/13/2004US20040089888 A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. A Magnetic Random Access Memory ("MRAM") device may include an array of such magnetic memory elements.
05/13/2004DE10346928A1 Verzögerungseinstellungsschaltung Delay adjustment circuit
05/13/2004DE10315087B3 Dynamic memory cell refreshing method for memory circuit for mobile applications effected with minimum current requirement
05/13/2004DE10245546B3 Pseudostatische Speicherschaltung Pseudo Static memory circuit
05/12/2004EP1418620A2 MRAM and methods for manufacturing and driving the same
05/12/2004EP1418592A1 Semiconductor memory device and control method thereof
05/12/2004EP1418591A2 Magnetic device
05/12/2004EP1418590A1 Magnetic device
05/12/2004EP1417686A2 Random-access memory devices comprising a dioded buffer
05/12/2004EP1417685A1 Proportional to temperature voltage generator
05/12/2004EP1151365B1 Rapid on chip voltage generation for low power integrated circuits
05/12/2004CN1496569A MRAM architecture and system
05/12/2004CN1496568A Memory sense amplifier for semiconductor memory device
05/12/2004CN1495929A Magneto-resistance element, magnetic storage and mfg. method
05/12/2004CN1495907A Nonvolatile storage device
05/12/2004CN1495906A Dynamic random access emory unit with lateral deviation sotrage node and its makin method
05/12/2004CN1495904A Semiconductor storage, semiconductor device and semiconductor device control method
05/12/2004CN1495902A Magnetic storage device and mfg. method
05/12/2004CN1495899A Shared volatile and non-volatile storage
05/12/2004CN1495896A Storage system and data transmission method
05/12/2004CN1495882A Power supply path structure for integrated circuit design
05/12/2004CN1495799A Special-purpose redundant circuit for different operations in internal memory device and its operation method
05/12/2004CN1495798A Nonvolatile memory suitable for superhigh speed buffer memory
05/12/2004CN1495797A Semiconductor storage equipment with storage unit array which is divided into block
05/12/2004CN1495796A Semiconductor storage and its testing method
05/12/2004CN1495795A Semiconductor storage device
05/12/2004CN1495793A Magnetic random access storage
05/12/2004CN1495792A 半导体集成电路 The semiconductor integrated circuit
05/12/2004CN1149737C Semiconductor integrated circuits
05/12/2004CN1149681C Charge transfer device having three pixel rows arragned adjacently to each other
05/12/2004CN1149680C Memory cell arragnement
05/12/2004CN1149674C Single chip integrated inductance
05/12/2004CN1149578C Magnetoresistive element and use of same as storage element in storage system
05/12/2004CN1149577C Block write power reduction method and device
05/12/2004CN1149576C Semiconductor integrated circuit
05/11/2004US6735726 Method of deciding error rate and semiconductor integrated circuit device
05/11/2004US6735669 Rambus DRAM
05/11/2004US6735146 System and method for pulling electrically isolated memory cells in a memory array to a non-floating state
05/11/2004US6735144 Semiconductor integrated circuit device
05/11/2004US6735143 System for reducing power consumption in memory devices
05/11/2004US6735141 Semiconductor memory device having an SRAM and a DRAM on a single chip
05/11/2004US6735140 Method and system for performing memory operations of a memory device
05/11/2004US6735139 System and method for providing asynchronous SRAM functionality with a DRAM array
05/11/2004US6735137 Semiconductor memory device employing temperature detection circuit
05/11/2004US6735136 Semiconductor memory device capable of preventing coupling noise between adjacent bit lines in different columns
05/11/2004US6735135 Compact analog-multiplexed global sense amplifier for RAMs
05/11/2004US6735134 Semiconductor memory device and method for driving a sense amplifier
05/11/2004US6735133 Semiconductor memory circuit having normal operation mode and burn-in test mode
05/11/2004US6735132 6F2 DRAM array with apparatus for stress testing an isolation gate and method
05/11/2004US6735129 Semiconductor integrated circuit device
05/11/2004US6735124 Flash memory device having four-bit cells
05/11/2004US6735121 Nonvolatile memory system having status register for rewrite control
05/11/2004US6735118 CG-WL voltage boosting scheme for twin MONOS
05/11/2004US6735113 Circuit and method for implementing a write operation with TCCT-based memory cells
05/11/2004US6735112 Magneto-resistive memory cell structures with improved selectivity
05/11/2004US6735111 Magnetoresistive memory devices and assemblies
05/11/2004US6735110 Memory cells enhanced for resistance to single event upset
05/11/2004US6735109 Uni-transistor random access memory device and control method thereof
05/11/2004US6735107 Nonvolatile semiconductor memory device having ferroelectric capacitors
05/11/2004US6735106 Accelerated fatigue testing
05/11/2004US6735103 System and method to avoid voltage read errors in open digit line array dynamic random access memories
05/11/2004US6735102 256 Meg dynamic random access memory
05/11/2004US6734573 Semiconductor memory having access transistors formed in a single well and driver transistors formed in wells different from the single well
05/11/2004US6734478 Ferroelectric memory circuit and method for its fabrication
05/06/2004WO2004038919A1 Voltage generation circuit, voltage generation device and semiconductor device using this, and driving method therefor
05/06/2004WO2004038767A2 Doped nanoscale wires and method of manufacture
05/06/2004WO2004038725A2 Magnetic memory device
05/06/2004WO2004038723A2 Magnetic memory device
05/06/2004WO2004027821A3 Ferroelectric transistor for storing two data bits
05/06/2004WO2004004436A3 Analog neurons and neurosynaptic networks
05/06/2004WO2004003915A3 Enhanced read & write methods for negative differential resistance (ndr) based memory device
05/06/2004WO2003025751A9 A system and method for efficient lock recovery
05/06/2004US20040088475 Memory device with column select being variably delayed
05/06/2004US20040088471 Equi-potential sensing magnetic random access memory (MRAM) with series diodes
05/06/2004US20040087240 Method of manufacturing an emitter
05/06/2004US20040087163 Method for forming magnetic clad bit line