Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
06/2004
06/16/2004EP1428221A1 Variable level memory
06/16/2004EP1428151A1 System and method for implementing journaling in a multi-node environment
06/16/2004EP1428149A1 A system and method for a multi-node environment with shared storage
06/16/2004EP1314165B1 Memory cell arrangement and method for the production thereof
06/16/2004EP1204975B1 Multiple data rate memory
06/16/2004EP1055165A4 Integrated dram with high speed interleaving
06/16/2004CN1505819A Associative memory, method for searching the same, network device, and network system
06/16/2004CN1505154A 半导体存储器件 A semiconductor memory device
06/16/2004CN1505153A 半导体存储装置 The semiconductor memory device
06/16/2004CN1505152A Reduced integrated circuit chip leakage and method of reducing leakage
06/16/2004CN1505055A Nonvolatile memory device having circuit for stably supplying desired current during data writing
06/16/2004CN1505054A Semiconductor memory device and erase method for memory array
06/16/2004CN1505053A Semiconductor memory device and method for correcting memory cell data
06/16/2004CN1505052A Semiconductor memory device and method for programming and erasing a memory cell
06/16/2004CN1505050A 半导体集成电路器件 The semiconductor integrated circuit device
06/16/2004CN1505048A Precharge time modified semiconductor storage apparatus
06/16/2004CN1505046A Reference voltage generating circuit and internal voltage generating circuit for controlling internal voltage level
06/16/2004CN1505045A 半导体存储器件和半导体集成电路 The semiconductor memory device and a semiconductor integrated circuit
06/16/2004CN1505044A Ferroelectric memory device comprising extended memory unit
06/16/2004CN1505043A Nonvolatile memory cell and non-volatile semiconductor memory device
06/16/2004CN1505042A Nonvolatile semiconductor storage apparatus
06/16/2004CN1505041A Magnetic memory device, write current drive circuit, and write current drive method
06/16/2004CN1505040A 磁随机存取存储器 Magnetic random access memory
06/16/2004CN1505039A Thin film magnetic memory device with memory cell having magnetic tunnel junction
06/16/2004CN1505038A Storage apparatus capable of prolixity displacement and high-speed reading-out
06/16/2004CN1154366C Method for recording a frame of image signal in SDRAM
06/16/2004CN1154188C Transistor, transistor array, method for manufacturing transistor array, and nonvolatile semiconductor memory
06/16/2004CN1154115C Ferroelectric read/write memory having series-connected storage cell (CFRAM)
06/16/2004CN1154113C Current sensor amplifier
06/16/2004CN1154111C Asynchronous pipeline semiconductor memory
06/15/2004US6751766 Increasing the effectiveness of error correction codes and operating multi-level memory systems by using information about the quality of the stored data
06/15/2004US6751696 Memory device having a programmable register
06/15/2004US6751257 Video decompressing system with efficient memory access capability
06/15/2004US6751159 Memory device operable in either a high-power, full-page size mode or a low-power, reduced-page size mode
06/15/2004US6751157 Method and apparatus for completely hiding refresh operations in a DRAM device using clock division
06/15/2004US6751155 Non-volatile memory control
06/15/2004US6751154 Semiconductor memory device
06/15/2004US6751152 Method and configuration to allow a lower wordline boosted voltage operation while increasing a sensing signal with access transistor threshold voltage
06/15/2004US6751149 Magnetic tunneling junction antifuse device
06/15/2004US6751147 Method for adaptively writing a magnetic random access memory
06/15/2004US6751146 System and method for charge restoration in a non-volatile memory device
06/15/2004US6751145 Volatile semiconductor memory and mobile device
06/15/2004US6751144 Semiconductor storage and method for testing the same
06/15/2004US6751143 Method and system for low power refresh of dynamic random access memories
06/15/2004US6751142 Semiconductor memory device equipped with dummy cells
06/15/2004US6751137 Column repair circuit in ferroelectric memory
06/15/2004US6751135 Method for driving memory cells of a dynamic semiconductor memory and circuit configuration
06/15/2004US6751134 Internal voltage generating apparatus for a semiconductor memory device
06/15/2004US6751130 Integrated memory device, method of operating an integrated memory, and memory system having a plurality of integrated memories
06/15/2004US6751128 Semiconductor memory device having shortened testing time
06/15/2004US6751122 Nonvolatile semiconductor memory device
06/15/2004US6751120 Clock synchronized non-volatile memory device
06/15/2004US6751119 Clock synchronized non-volatile memory device
06/15/2004US6751118 Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
06/15/2004US6751117 Single ended row select for a MRAM device
06/15/2004US6751116 Semiconductor memory device
06/15/2004US6751111 High density memory cell
06/15/2004US6751074 Magnetic memory having antiferromagnetically coupled recording layer
06/15/2004US6750944 Programmable camera system with software interpreter
06/15/2004US6750871 Memory consolidated image processing LSI, image processing system with same, and image accessing method using same
06/15/2004US6750700 256 meg dynamic random access memory
06/15/2004US6750692 Circuit and method for generating internal clock signal
06/15/2004US6750688 Semiconductor integrated circuit device and delay-locked loop device
06/15/2004US6750555 Semiconductor SRAM having linear diffusion regions
06/15/2004US6750540 Magnetic random access memory using schottky diode
06/15/2004US6750497 High-speed transparent refresh DRAM-based memory cell
06/15/2004US6750493 Semiconductor storage device including nonvolatile ferroelectric memory
06/15/2004US6750491 Magnetic memory device having soft reference layer
06/15/2004US6750469 Phase change nonvolatile storage device and drive circuit
06/15/2004US6750101 Method of manufacturing self-aligned, programmable phase change memory
06/15/2004US6750079 Method for making programmable resistance memory element
06/15/2004US6750068 Method of fabricating a magnetic element with an improved magnetoresistance ratio with an antiparallel top and bottom pinned ferromagnetic layer
06/10/2004WO2004049348A1 Sram memory cell and method for compensating a leakage current flowing into the sram memory cell
06/10/2004WO2004049346A1 Non-volatile memory cell and control method thereof
06/10/2004WO2004049345A2 Magnetic memory architecture with shared current line
06/10/2004WO2004049344A2 Method and device for improved magnetic field generation during a write operation of a magnetoresistive memory device
06/10/2004WO2004049343A1 A method and device to detect the likely onset of thermal relaxation in magnetic data storage devices
06/10/2004WO2004049342A2 Current re-routing scheme for serial-programmed mram
06/10/2004WO2004049341A1 Method and apparatus for establishing a reference voltage in a memory
06/10/2004WO2004049168A1 Memory module, memory system, and information device
06/10/2004WO2004048923A2 Multibit metal nanocrystal memories and fabrication
06/10/2004US20040111571 Semiconductor storage
06/10/2004US20040110337 Adaptive negative differential resistance device
06/10/2004US20040109383 Semiconductor device having a power down mode
06/10/2004US20040109382 Methods for generating output control signals in synchronous semiconductor memory devices and related semiconductor memory devices
06/10/2004US20040109377 Nonvolatile memory device having circuit for stably supplying desired current during data writing
06/10/2004US20040109373 Integrated circuit devices including input/output line pairs and precharge circuits and related memory devices
06/10/2004US20040109368 Semiconductor integrated circuit device
06/10/2004US20040109367 Ferroelectric element and a ferroelectric gate device using the same
06/10/2004US20040109363 Ferroelectric storage apparatus, driving method therefor, and driving circuit therefor
06/10/2004US20040109362 Smart verify for multi-state memories
06/10/2004US20040109361 Source-biased memory cell array
06/10/2004US20040109359 Integrated memory
06/10/2004US20040109358 Refined gate coupled noise compensation for open-drain output from semiconductor device
06/10/2004US20040109357 Non-volatile memory and method with improved sensing
06/10/2004US20040109353 Semiconductor memory device and method for correcting a reference cell
06/10/2004US20040109352 Flash memory device having uniform threshold voltage distribution and method for verifying same
06/10/2004US20040109349 Magnetic memory device with divided write wirings
06/10/2004US20040109348 Thin film magnetic memory device with memory cell having magnetic tunnel junction
06/10/2004US20040109347 Highly nonlinear magnetic tunnel junctions for dense magnetic random access memories