Patents
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
07/2004
07/20/2004US6765832 Semiconductor memory device with word line shift configuration
07/20/2004US6765831 Semiconductor integrated circuit device
07/20/2004US6765824 Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory
07/20/2004US6765823 Magnetic memory cell with shape anisotropy
07/20/2004US6765822 Memory device
07/20/2004US6765821 Magnetic memory
07/20/2004US6765820 Magneto-resistive memory array
07/20/2004US6765819 Magnetic memory device having improved switching characteristics
07/20/2004US6765818 Semiconductor memory having memory cells and device for controlling data written in the semiconductor memory
07/20/2004US6765817 Semiconductor memory
07/20/2004US6765816 Storage circuit having single-ended write circuitry
07/20/2004US6765815 Semiconductor memory device having a main word-line layer disposed above a column selection line layer
07/20/2004US6765814 Semiconductor memory device
07/20/2004US6765432 Semiconductor device with a low-power operation mode
07/20/2004US6765423 Semiconductor circuit having clock synchronous receiver circuit
07/20/2004US6765406 Circuit board configured to provide multiple interfaces
07/20/2004US6765303 FinFET-based SRAM cell
07/20/2004US6765253 Semiconductor memory device
07/20/2004US6764897 Method of making programmable resistance memory element
07/20/2004US6764865 Semiconductor memory device including magneto resistive element and method of fabricating the same
07/20/2004US6764861 Kit for use in the detection of preferential particle in sample
07/20/2004US6764166 Ejecting ink using shape memory alloys
07/15/2004WO2004059838A1 Non-volatile latch circuit and method for driving same
07/15/2004WO2004059745A1 Magnetic switching device and magnetic memory
07/15/2004WO2004059739A2 Memory architecture with series grouped memory cells
07/15/2004WO2004059738A1 Fin field effect transistor memory cell, fin field effect transistor memory cell arrangement, and method for the production of a fin field effect transistor memory cell
07/15/2004WO2004059697A2 Adaptive negative differential resistance device
07/15/2004WO2003107350B1 Magnetoresistive random access memory with reduced switching field
07/15/2004WO2003098636A3 STACKED 1T-nMEMORY CELL STRUCTURE
07/15/2004US20040139282 Apparatus and method for memory management
07/15/2004US20040136260 Semiconductor integrated circuit device
07/15/2004US20040136258 Semiconductor memory device and mount-type semiconductor device
07/15/2004US20040136252 Method and apparatus for enhanced sensing of low voltage memory
07/15/2004US20040136251 Semiconductor device
07/15/2004US20040136250 Semiconductor memory device with improved precharge timing
07/15/2004US20040136247 Sending signal through integrated circuit during setup time
07/15/2004US20040136241 Pipeline accelerator for improved computing architecture and related system and method
07/15/2004US20040136238 Three-state memory cell
07/15/2004US20040136237 Memory apparatus including programable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
07/15/2004US20040136236 Method circuit and system for read error detection in a non-volatile memory array
07/15/2004US20040136235 Magnetic storage element, recording method using the same, and magnetic storage device
07/15/2004US20040136234 Magnetic storage element, recording method using the same, and magnetic storage device
07/15/2004US20040136233 Magnetic storage element, recording method using the magnetic storage element
07/15/2004US20040136232 Magnetoresistive element and magnetic memory unit
07/15/2004US20040136231 Magnetostatically coupled magnetic elements utilizing spin transfer and an mram device using the magnetic element
07/15/2004US20040136230 Logic-merged memory
07/15/2004US20040136228 Semiconductor memory with embedded dram
07/15/2004US20040136227 Integrated semiconductor memory with a selection transistor formed at a web
07/15/2004US20040136226 Wide databus architecture
07/15/2004US20040136225 Ferroelectric memory and semiconductor memory
07/15/2004US20040136224 One button external backup
07/15/2004US20040136223 Ferroelectric resistor non-volatile memory array
07/15/2004US20040136221 Output buffer circuit and semiconductor memory using the same
07/15/2004US20040136220 Method circuit and system for determining a reference voltage
07/15/2004US20040136219 Semiconductor memory device and semiconductor integrated circuit device
07/15/2004US20040136216 Dynamic associative memory device
07/15/2004US20040135215 Multilayer; integrated circuit substrate; active material zones
07/15/2004US20040135203 Semiconductor device
07/15/2004US20040135202 Semiconductor device
07/15/2004US20040134876 Semiconductor memory device utilizing tunnel magneto resistive effects and method for manufacturing the same
07/15/2004DE60006031T2 Speicherfehlerkorrektur mit einem redundanten geschnittenen Speicher und Standard ECC Mechanismus Memory error correction with a redundant-cut standard ECC memory and mechanism
07/15/2004DE10358476A1 Scanning amplifier circuit e.g. for semiconductor RAM or ROM module and esp. for scanning amplifier circuit, includes input/output gate circuit for transmitting read-data to data input/output line pair
07/15/2004DE10344021A1 Non-volatile memory device e.g. NAND-type flash memory, has memory cell array and gating circuit connected by page buffer whose main and auxiliary registers are controlled by operation of transistor
07/15/2004DE10338729A1 Magnetspeichervorrichtung mit größerer Referenzzelle A magnetic memory device with a larger reference cell
07/15/2004DE10335070A1 Halbleiterspeichervorrichtung mit einer Speicherzelle mit geringem Zellverhältnis A semiconductor memory device having a memory cell with a small cell ratio
07/15/2004DE10260770A1 DRAM memory cell production process and cell arrangement has vertical select transistor and channel partly enclosing the trench hole and surrounded by word line
07/15/2004DE10260334A1 Fin-Feldeffektransitor-Speicherzelle, Fin-Feldeffekttransistor-Speicherzellen-Anordnung und Verfahren zum Herstellen einer Fin-Feldeffektransistor-Speicherzelle Fin-Feldeffektransitor memory cell, fin field effect transistor memory cell arrangement and method of fabricating a fin field effect transistor memory cell
07/14/2004EP1437747A1 Magnetoresistive random access memory with high selectivity
07/14/2004EP1437746A2 Nanomagnetic materials
07/14/2004EP1437674A2 A method and a system for assisting a user in a medical self treatment
07/14/2004EP1437661A2 Integrated circuit device, semiconductor memory, and integrated circuit system coping with high-frequency clock signal
07/14/2004EP1437660A2 Semiconductor memory device and mount-type semiconductor device
07/14/2004EP1436815A1 Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric
07/14/2004EP1436147A1 A keyboard
07/14/2004CN1513184A Memory device with self-assembled polymer film and method of making the same
07/14/2004CN1512603A Oxide giant magnet resistor spin valve, preparing process and its use
07/14/2004CN1512591A Non-volatile storage device
07/14/2004CN1512513A Non volatile storage device for high speed high efficiency changing in-site programmable door array function
07/14/2004CN1512510A Fault removing circuit for storage
07/14/2004CN1512509A Interleaving controller using non-volatile iron electric memory
07/14/2004CN1512348A Device and method for storage management
07/14/2004CN1512224A 显示设备 Display device
07/14/2004CN1157791C Semiconductor storage device and method for fetch said device in test pattern
07/14/2004CN1157737C Non volatile storage deivce
07/14/2004CN1157736C Circuit for generating reference voltage for reading out from ferroelectric memory
07/13/2004US6763480 Flash EEprom system
07/13/2004US6763422 Cache memory capable of reducing area occupied by data memory macro units
07/13/2004US6763079 Semiconductor device allowing easy confirmation of operation of built in clock generation circuit
07/13/2004US6763026 Memory used in packet switching network for successively storing data bits in data storage region and serially outputting data bits and method used therein
07/13/2004US6762974 Method and apparatus for establishing and maintaining desired read latency in high-speed DRAM
07/13/2004US6762972 Synchronous semiconductor memory device and method of processing data thereof
07/13/2004US6762971 Semiconductor memory device
07/13/2004US6762968 Semiconductor memory device having a small-sized memory chip and a decreased power-supply noise
07/13/2004US6762967 Semiconductor memory device having a circuit for fast operation
07/13/2004US6762966 Method and circuit to investigate charge transfer array transistor characteristics and aging under realistic stress and its implementation to DRAM MOSFET array transistor
07/13/2004US6762963 Semiconductor memory having dynamic memory cells and a redundancy relief circuit
07/13/2004US6762962 Memory system capable of overcoming propagation delay differences during data write
07/13/2004US6762958 Semiconductor memory with precharge control
07/13/2004US6762954 Local probe of magnetic properties
07/13/2004US6762953 Nonvolatile memory device with sense amplifier securing reading margin