Patents
Sitemap › G11 - Information storage › G11C - Static stores › G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
Patents for G11C 11 - Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor (76,008)
03/2005
03/10/2005US20050052923 Semiconductor apparatus capable of performing refresh control
03/10/2005US20050052922 Flash memory device capable of reducing read time
03/10/2005US20050052919 Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device
03/10/2005US20050052917 Column read amplifier power-gating technique for integrated circuit memory devices and those devices incorporating embedded dynamic random access memory (DRAM)
03/10/2005US20050052915 Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance states
03/10/2005US20050052914 Semiconductor memory device
03/10/2005US20050052913 Semi-conductor memory component, and a process for operating a semi-conductor memory component
03/10/2005US20050052909 Semiconductor memory device
03/10/2005US20050052905 Magnetic memory cell structure
03/10/2005US20050052904 Initial firing method and phase change memory device for performing firing effectively
03/10/2005US20050052903 Magnetoresistive effect element and memory device using the same
03/10/2005US20050052902 Memory device with a thermally assisted write
03/10/2005US20050052901 Circuit for write field disturbance cancellation in an mram and method of operation
03/10/2005US20050052900 Magnetic device
03/10/2005US20050052899 Magnetoresistive element, magnetic memory cell, and magnetic memory device
03/10/2005US20050052897 Single cycle read/write/writeback pipeline, full-wordline I/O DRAM architecture with enhanced write and single ended sensing
03/10/2005US20050052896 Nonvolatile ferroelectric memory device having multi-bit control function
03/10/2005US20050052895 FeRAM using programmable register
03/10/2005US20050052893 Data storage device and method of forming the same
03/10/2005US20050052788 Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
03/10/2005US20050052514 Inkjet nozzle with supply duct dimensioned for viscous damping
03/10/2005US20050052155 Battery array and process for controlling the state of charge of a battery array
03/10/2005US20050051820 Fabrication process for a magnetic tunnel junction device
03/10/2005US20050051818 Integrated circuit structure formed by damascene process
03/09/2005EP1513158A1 Magnetoresistive element, magnetic memory cell, and magnetic memory device
03/09/2005EP1513157A1 Method for multibank memory scheduling
03/09/2005EP1512150A2 Memory array having 2t memory cells
03/09/2005EP1444696B1 A matrix-addressable optoelectronic apparatus and electrode means in the same
03/09/2005EP1346367B1 A ferroelectric memory circuit and method for its fabrication
03/09/2005EP1316090B1 Non-volatile passive matrix and method for readout of the same
03/09/2005EP1133749B1 Capacitive sensing array devices
03/09/2005CN1592971A Matrix-addressable apparatus with one or more memory devices
03/09/2005CN1591696A 半导体集成电路 The semiconductor integrated circuit
03/09/2005CN1591686A 非挥发性动态随机存取存储器 Non-volatile dynamic random access memory
03/09/2005CN1591684A 半导体存储器件 The semiconductor memory device
03/09/2005CN1591683A 数据输出驱动器 Data output drivers
03/09/2005CN1591682A Semiconductor memory device using vss or vdd bit line precharge approach
03/09/2005CN1591681A Semiconductor memory device
03/09/2005CN1591680A Write path circuit in synchronous dram
03/09/2005CN1591679A Circuit and method for evaluating and controlling a refresh rate of memory cells of a dynamic memory
03/09/2005CN1591677A Non-volatile semiconductor storage device and its mfg method
03/09/2005CN1591676A Magnetic film, method and mechanism of magnetization inversion of magnetic film, and magnetic random access memory
03/09/2005CN1591675A Magnetic dual element with dual magnetic states and fabricating method thereof
03/09/2005CN1591674A Magnetoresistive element, magnetic memory cell, and magnetic memory device
03/09/2005CN1591673A Magnetic tunnel junction and memory device including the same
03/09/2005CN1591670A Method for multibank memory scheduling
03/09/2005CN1192433C Ferro-electric storage read-write memory
03/09/2005CN1192394C Multiple bit magnetic memory cell
03/09/2005CN1192392C Field response reinforced magnetic component and its mfg. method
03/09/2005CN1192391C 半导体集成电路器件 The semiconductor integrated circuit device
03/09/2005CN1192390C Assembly line double-port integrated circuit memory
03/08/2005US6865705 Semiconductor integrated circuit device capable of switching mode for trimming internal circuitry through JTAG boundary scan method
03/08/2005US6865628 Output data path capable of multiple data rates
03/08/2005US6865186 Multiple message multilevel analog signal recording and playback system having memory array configurable for analog and digital storage and serial communication
03/08/2005US6865136 Timing circuit and method of changing clock period
03/08/2005US6865135 Multi-frequency synchronizing clock signal generator
03/08/2005US6865132 System and method for quick self-refresh exit with transitional refresh
03/08/2005US6865131 Memory devices with reduced power consumption refresh cycles
03/08/2005US6865129 Differential amplifier circuit with high amplification factor and semiconductor memory device using the differential amplifier circuit
03/08/2005US6865127 Semiconductor integrated circuit device
03/08/2005US6865126 Semiconductor memory device capable of relieving defective cell
03/08/2005US6865125 Non-volatile semiconductor memory
03/08/2005US6865123 Semiconductor memory device with enhanced repair efficiency
03/08/2005US6865120 Register array having timing reference sensing function, FeRAM using the same, and sensing method using timing reference
03/08/2005US6865119 Negatively charged wordline for reduced subthreshold current
03/08/2005US6865117 Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same
03/08/2005US6865109 Magnetic random access memory having flux closure for the free layer and spin transfer write mechanism
03/08/2005US6865108 Memory cell strings in a resistive cross point memory cell array
03/08/2005US6865107 Magnetic memory device
03/08/2005US6865106 Bridge-type magnetic random access memory (MRAM) latch
03/08/2005US6865105 Thermal-assisted switching array configuration for MRAM
03/08/2005US6865104 Magnetoresistive random access memory (MRAM) with on-chip automatic determination of optimized write current method and apparatus
03/08/2005US6865103 Thin film magnetic memory device having a redundant structure
03/08/2005US6865102 Static semiconductor storage device
03/08/2005US6865101 Memory system and semiconductor integrated circuit in which operation timings can be set externally
03/08/2005US6865100 6F2 architecture ROM embedded DRAM
03/08/2005US6865099 Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
03/08/2005US6864721 Decoder circuit
03/08/2005US6864712 Hardening logic devices
03/08/2005US6864711 Programmable array logic circuit whose product and input line junctions employ single bit non-volatile ferromagnetic cells
03/08/2005US6864693 Semiconductor integrated circuit with negative voltage generation circuit, test method for the same, and recording device and communication equipment having the same
03/08/2005US6864624 Electron emitter device for data storage applications
03/08/2005US6864522 Memory device
03/08/2005US6864123 Memory device and manufacturing method therefor
03/08/2005US6864104 Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
03/03/2005WO2005020327A1 Magnetic storage cell and magnetic memory device
03/03/2005WO2005020326A1 Magnetic storage cell and magnetic memory device
03/03/2005WO2005020251A2 High speed low power magnetic devices based current induced spin-momentum transfer
03/03/2005WO2005020242A2 Magnetic memory element utilizing spin transfer switching and storing multiple bits
03/03/2005WO2005019848A2 Self-heating burn-in
03/03/2005WO2004109705A3 Ferroelectric memory device
03/03/2005WO2004075197A3 Mram memory cell
03/03/2005WO2004034401A3 Dynamic memory supporting simultaneous refresh and data-access transactions
03/03/2005US20050050399 Field spike monitor for MRAM
03/03/2005US20050050262 Controlled substrate voltage for memory switches
03/03/2005US20050050259 Method for multibank memory scheduling
03/03/2005US20050048675 Method of etching magnetic material, magnetoresistive film and magnetic random access memory
03/03/2005US20050047266 Memory and driving method of the same
03/03/2005US20050047264 Write path scheme in synchronous DRAM
03/03/2005US20050047262 Magnetic film, multilayer magnetic film, method and mechanism of magnetization inversion of magnetic film, and magnetic random access memory
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